TUNABLE POWER SAVE LOOP FOR PROCESSOR CHIPS

    公开(公告)号:US20210294640A1

    公开(公告)日:2021-09-23

    申请号:US16820808

    申请日:2020-03-17

    IPC分类号: G06F9/48 G06F11/34

    摘要: Aspects of the present invention disclose a method for avoiding overvoltages of a processor chip. The method includes one or more processors identifying one or more processing units of a computing device. The method further includes determining respective activity levels of one or more processing elements of the one or more processing units of the computing device. The method further includes determining respective voltages of the one or more processing units of the computing device. The method further includes regulating the respective voltages of the one or more processing units of the computing device based at least in part on the respective activity levels of the one or more processing elements.

    Granular variable impedance tuning
    13.
    发明授权

    公开(公告)号:US10897239B1

    公开(公告)日:2021-01-19

    申请号:US16563104

    申请日:2019-09-06

    摘要: A method comprises activating an interval timer to expire in a calibration time interval and, in response to the timer expiring, performing an impedance analysis of an electronic network. The impedance analysis can use time-domain reflectometry. Based on the analysis, the method can calibrate a variable impedance device to have a first impedance and re-activate the timer. The method can perform a second impedance analysis based on calibrating the variable impedance device. The method can include determining a drift rate and modifying the calibration time interval. The variable impedance device can comprise a phase-change material (PCM), and the time interval can correspond to a retention time of the PCM and/or a dynamic drift rate. A system comprising a segment of an electronic network, a timer, a variable impedance device, and an impedance tuning system can embody operations of the method.

    Voltage Rail Monitoring to Detect Electromigration

    公开(公告)号:US20170219648A1

    公开(公告)日:2017-08-03

    申请号:US15054464

    申请日:2016-02-26

    IPC分类号: G01R31/28

    摘要: A method detects electromigration in a field replaceable unit. An integrated circuit, which is within a field replaceable unit (FRU) in an electronic device, is quiescented. An isolation power switch applies a test voltage from a field power source to a target voltage rail in the integrated circuit. An isolation power switch isolates the target voltage rail from the field power source. A voltage sensor coupled to the target voltage rail measures a field voltage decay rate for the target voltage rail. A voltage record comparator logic within the integrated circuit compares the field voltage decay rate to an initial voltage decay rate for the target voltage rail. In response to a difference between the field voltage decay rate and the initial voltage decay rate for the target voltage rail exceeding a predetermined limit, a signal is sent to an output device.

    BUILT-IN TESTING OF UNUSED ELEMENT ON CHIP
    20.
    发明申请
    BUILT-IN TESTING OF UNUSED ELEMENT ON CHIP 有权
    未使用元素在芯片上的内置测试

    公开(公告)号:US20150262711A1

    公开(公告)日:2015-09-17

    申请号:US14205724

    申请日:2014-03-12

    IPC分类号: G11C29/44

    摘要: Embodiments relate to built-in testing of an unused element on a chip. An aspect includes concurrently performing on a chip comprising a plurality of chip elements comprising a plurality of active elements, each active element enabled to perform a respective function, and at least one unused element that is disabled from performing the respective function and configured to be selectively enabled as an active element, the respective functions of the respective active elements and a built-in self test (BIST) test of the at least one unused element. Another aspect includes inputting an input test pattern to the unused element. Another aspect includes receiving an output test pattern based on the input test pattern from the unused element. Another aspect includes comparing the input test pattern to the output test pattern. Another aspect includes determining whether the unused element passed or failed the testing based on the comparison.

    摘要翻译: 实施例涉及芯片上未使用元件的内置测试。 一个方面包括在芯片上并行执行包括多个芯片元件的芯片元件,所述多个芯片元件包括多个有源元件,每个有源元件能够执行相应的功能,以及至少一个未被使用的元件被禁止执行相应的功能并被配置为选择性地 启用作为活动元件,相应活动元件的相应功能和至少一个未使用元件的内置自检(BIST)测试。 另一方面包括将输入测试图案输入到未使用的元件。 另一方面包括基于来自未使用元件的输入测试图案接收输出测试图案。 另一方面包括将输入测试模式与输出测试模式进行比较。 另一方面包括基于比较来确定未使用的元件是否通过或失败测试。