公开(公告)号：US11127815B2

公开(公告)日：2021-09-21

申请号：US16398987

申请日：2019-04-30

申请人： International Business Machines Corporation

发明人： Marc Adam Bergendahl ,  Gauri Karve ,  Fee Li Lie ,  Eric R. Miller ,  Robert Russell Robison ,  John Ryan Sporre ,  Sean Teehan

IPC分类号： H01L21/00 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

摘要： A semiconductor device includes a fin structure having a circular cylindrical shape, and including a first recess formed on a first side of the fin structure and a second recess formed on a second side of the fin structure opposite the first side, an inner gate formed inside the fin structure, and an inner gate insulating layer formed between the inner gate and an inner surface of the fin structure.

公开(公告)号：US09978560B2

公开(公告)日：2018-05-22

申请号：US15199350

申请日：2016-06-30

申请人： International Business Machines Corporation

发明人： Marc Adam Bergendahl ,  James John Demarest ,  Christopher J. Penny ,  Roger Allen Quon ,  Christopher Joseph Waskiewicz

IPC分类号： H01J37/26 ,  H01J37/28

CPC分类号： H01J37/261 ,  H01J37/28 ,  H01J2237/206 ,  H01J2237/2802 ,  H01J2237/3114

摘要： A system for performing nano beam diffraction (NBD) analysis, includes a focused ion beam (FIB) device for preparing a transmission electron microscopy (TEM) sample, a broad beam ion mill for milling the TEM sample to remove a surface portion of the TEM sample, and a strain analyzer for performing NBD analysis on the milled TEM sample to acquire diffraction data.

公开(公告)号：US10658154B2

公开(公告)日：2020-05-19

申请号：US16050752

申请日：2018-07-31

申请人： International Business Machines Corporation

发明人： Marc Adam Bergendahl ,  James John Demarest ,  Christopher J. Penny ,  Roger Allen Quon ,  Christopher Joseph Waskiewicz

IPC分类号： H01J37/26 ,  H01J37/28 ,  G01N23/20058

摘要： A system for performing diffraction analysis, includes a mill for removing a surface portion of a sample, and an analyzer for performing diffraction analysis on the milled sample.

公开(公告)号：US10381437B2

公开(公告)日：2019-08-13

申请号：US15859362

申请日：2017-12-30

申请人： International Business Machines Corporation

发明人： Marc Adam Bergendahl ,  Gauri Karve ,  Fee Li Lie ,  Eric R. Miller ,  Robert Russell Robison ,  John Ryan Sporre ,  Sean Teehan

IPC分类号： H01L21/00 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

摘要： A semiconductor device includes a fin structure including a cylindrical shape, an inner gate formed inside the fin structure, and an outer gate formed outside the fin structure and connected to the inner gate.

公开(公告)号：US09917196B1

公开(公告)日：2018-03-13

申请号：US15294490

申请日：2016-10-14

申请人： International Business Machines Corporation

发明人： Marc Adam Bergendahl ,  Gauri Karve ,  Fee Li Lie ,  Eric R. Miller ,  Robert Russell Robison ,  John Ryan Sporre ,  Sean Teehan

IPC分类号： H01L21/00 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

CPC分类号： H01L29/7853 ,  H01L29/0657 ,  H01L29/66795 ,  H01L29/7856

摘要： A semiconductor device includes a fin structure comprising a cylindrical shape and including a recess formed in an upper surface of the fin structure, an inner gate formed inside the fin structure, an outer gate formed outside the fin structure, and a conductor formed in the recess and connecting the inner and outer gates.

公开(公告)号：US08896067B2

公开(公告)日：2014-11-25

申请号：US13736111

申请日：2013-01-08

申请人： International Business Machines Corporation

发明人： Marc Adam Bergendahl ,  David Vaclav Horak ,  Shom Ponoth ,  Chih-Chao Yang ,  Charles William Koburger, III

IPC分类号： H01L29/772 ,  H01L29/66 ,  H01L27/088

CPC分类号： H01L27/0886 ,  H01L21/823431 ,  H01L29/785

摘要： Embodiments of present invention provide a method of forming a first and a second group of fins on a substrate; covering a top first portion of the first and second groups of fins with a first dielectric material; covering a bottom second portion of the first and second groups of fins with a second dielectric material, the bottom second portion of the first group and the second group of fins having a same height; exposing a middle third portion of the first and second groups of fins to an oxidizing environment to create an oxide section that separates the top first portion from the bottom second portion of the first and second groups of fins; and forming one or more fin-type field-effect-transistors (FinFETs) using the top first portion of the first and second groups of fins as fins under gates of the one or more FinFETs.

摘要翻译： 本发明的实施例提供一种在基板上形成第一组翅片和第二组翅片的方法; 用第一介电材料覆盖第一和第二组翅片的顶部第一部分; 用第二电介质材料覆盖第一和第二组翅片的底部第二部分，第一组的底部第二部分和具有相同高度的第二组翅片; 将第一组翅片和第二组翅片的中间第三部分暴露于氧化环境以产生将顶部第一部分与第一组翅片和第二组鳍片的底部第二部分分离的氧化物部分; 以及使用所述第一和第二组翅片的顶部第一部分在所述一个或多个FinFET的栅极下形成翅片形成一个或多个鳍状场效应晶体管（FinFET）。

公开(公告)号：US09627377B2

公开(公告)日：2017-04-18

申请号：US14538401

申请日：2014-11-11

申请人： GLOBALFOUNDRIES INC.

发明人： Marc Adam Bergendahl ,  Kangguo Cheng ,  David Vaclav Horak ,  Ali Khakifirooz ,  Shom Ponoth ,  Theodorus Eduardus Standaert ,  Chih-Chao Yang ,  Charles William Koburger, III ,  Xiuyu Cai ,  Ruilong Xie

IPC分类号： H01L27/08 ,  H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

CPC分类号： H01L27/0886 ,  H01L29/0649 ,  H01L29/6681 ,  H01L29/7855

摘要： Embodiments of the present invention provide a method of forming semiconductor structure. The method includes forming a set of device features on top of a substrate; forming a first dielectric layer directly on top of the set of device features and on top of the substrate, thereby creating a height profile of the first dielectric layer measured from a top surface of the substrate, the height profile being associated with a pattern of an insulating structure that fully surrounds the set of device features; and forming a second dielectric layer in areas that are defined by the pattern to create the insulating structure. A structure formed by the method is also disclosed.