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公开(公告)号:US11430749B2
公开(公告)日:2022-08-30
申请号:US16662425
申请日:2019-10-24
Applicant: Infineon Technologies AG
Inventor: Markus Mergens , Werner Simbuerger
IPC: H01L23/60 , H01L29/66 , H01L21/285 , H01L23/522
Abstract: According to one configuration, a fabricator produces an electronic device to include: a substrate; a transistor circuit disposed on the substrate; silicide material disposed on first regions of the transistor circuit; and the silicide material absent from second regions of the transistor circuit. Absence of the silicide material over the second regions of the respective of the transistor circuit increases a resistance of one or more parasitic paths (such as one or more parasitic transistors) in the transistor circuit. The increased resistance in the one or more parasitic paths provides better protection of the transistor circuit against electro-static discharge conditions.
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公开(公告)号:US10270245B2
公开(公告)日:2019-04-23
申请号:US15900228
申请日:2018-02-20
Applicant: Infineon Technologies AG
Inventor: Werner Simbuerger , Winfried Bakalski , Georg Lischka , Andreas Wiesbauer
IPC: H02H9/04 , H01L27/02 , H04R3/00 , H01L49/02 , H01L29/747
Abstract: An integrated circuit device comprises at least one non-linear circuit. Further the integrated circuit device comprises a plurality of terminal circuits coupled to the non-linear circuit. Each terminal circuit comprises an associated terminal and an inductor coupled to the associated terminal and to the at least one non-linear circuit. A protective device for protection of a circuit, comprises an electro-static discharge protection element configured to be coupled to a circuit terminal and an inductor coupled to the electro-static discharge protection element and configured to be coupled to the circuit. The inductor has a low quality factor.
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公开(公告)号:US09917575B2
公开(公告)日:2018-03-13
申请号:US13937075
申请日:2013-07-08
Applicant: Infineon Technologies AG
Inventor: Valentyn Solomko , Winfried Bakalski , Nikolay Ilkov , Werner Simbuerger
IPC: H03K17/687 , H03K17/042
CPC classification number: H03K17/04206
Abstract: A circuit includes a switching element with a first terminal, a second terminal and a control terminal. The circuit also includes an impedance network coupled between the control terminal and a switching node. The circuit also includes a first accelerating element coupled between the control terminal and a first node. The first node is different from the switching node. The circuit is configured to temporarily activate the first accelerating element when a switching state of the switching element is to be changed.
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公开(公告)号:US20180052479A1
公开(公告)日:2018-02-22
申请号:US15679263
申请日:2017-08-17
Applicant: Infineon Technologies AG
Inventor: Winfried Bakalski , Werner Simbuerger , Anton Steltenpohl , Hans Taddiken
CPC classification number: G05F3/205 , H01L27/0629 , H01L27/0922 , H01L29/0615 , H01L29/1029 , H03G1/0023 , H03G1/0029 , H03G1/007 , H03G1/0088
Abstract: In accordance with an embodiment, an integrated circuit includes a substrate, an amplifier MOSFET, and a bias voltage terminal configured to generate a potential difference of the substrate relative to at least one load terminal of the amplifier MOSFET.
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公开(公告)号:US09666543B2
公开(公告)日:2017-05-30
申请号:US14690025
申请日:2015-04-17
Applicant: Infineon Technologies AG
Inventor: Saverio Trotta , Jagjit Singh Bal , Ulrich Moeller , Andrzej Samulak , Werner Simbuerger
IPC: H01L23/66 , H01L23/367 , H01L23/40
CPC classification number: H01L23/66 , H01L23/3675 , H01L23/40 , H01L23/4006 , H01L2023/4087 , H01L2223/6627 , H01L2223/6683 , H01L2224/16225
Abstract: An electronic system includes a carrier including at least one waveguide feeding, a semiconductor chip including a first surface and a second surface, and an integrated RF circuit, and a cooling element including a backshort. The semiconductor chip is mounted to the carrier such that the first surface faces the carrier. The integrated RF circuit is connected to the at least one waveguide feeding. The cooling element is mounted to the carrier such that the backshort is adjacent one end of the at least one waveguide feeding, and the cooling element at least partially covers the semiconductor chip such that the second surface of the semiconductor chip faces the cooling element.
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公开(公告)号:US09641201B2
公开(公告)日:2017-05-02
申请号:US14264986
申请日:2014-04-29
Applicant: Infineon Technologies AG
Inventor: Winfried Bakalski , Werner Simbuerger
CPC classification number: H04B1/006 , H04B1/0458 , H04B1/18 , H04W88/06
Abstract: In accordance with an embodiment, a radio frequency integrated circuit (RFIC) includes an adjustable capacitance coupled to an input terminal of the RFIC, and a first single-pole multiple-throw (SPMT) radio frequency (RF) switch having an input coupled to the adjustable capacitance and a plurality of output nodes coupled to a corresponding plurality of second output terminals of the RFIC.
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公开(公告)号:US20150305190A1
公开(公告)日:2015-10-22
申请号:US14690025
申请日:2015-04-17
Applicant: Infineon Technologies AG , Conti Temic microelectronic GmbH
Inventor: Saverio Trotta , Jagjit Singh Bal , Ulrich Moeller , Andrzej Samulak , Werner Simbuerger
IPC: H05K7/20 , H01L23/66 , H01L23/40 , H01L23/498 , H01L23/367 , H01L23/373
CPC classification number: H01L23/66 , H01L23/3675 , H01L23/40 , H01L23/4006 , H01L2023/4087 , H01L2223/6627 , H01L2223/6683 , H01L2224/16225
Abstract: An electronic system includes a carrier including at least one waveguide feeding, a semiconductor chip including a first surface and a second surface, and an integrated RF circuit, and a cooling element including a backshort. The semiconductor chip is mounted to the carrier such that the first surface faces the carrier. The integrated RF circuit is connected to the at least one waveguide feeding. The cooling element is mounted to the carrier such that the backshort is adjacent one end of the at least one waveguide feeding, and the cooling element at least partially covers the semiconductor chip such that the second surface of the semiconductor chip faces the cooling element.
Abstract translation: 电子系统包括载体,该载体包括至少一个波导馈送,包括第一表面和第二表面的半导体芯片,以及集成RF电路,以及包括后向阻滞的冷却元件。 将半导体芯片安装到载体上使得第一表面面向载体。 集成RF电路连接到至少一个波导馈送。 冷却元件安装到载体上,使得后端与所述至少一个波导馈送的一端相邻,并且所述冷却元件至少部分地覆盖半导体芯片,使得半导体芯片的第二表面面向冷却元件。
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