公开(公告)号：US20220181167A1

公开(公告)日：2022-06-09

申请号：US17523919

申请日：2021-11-11

Applicant: Innolux Corporation

Inventor： Yi-Hung Lin ,  Wen-Hsiang Liao ,  Cheng-Chi Wang ,  Yi-Chen Chou ,  Fuh-Tsang Wu ,  Ker-Yih Kao

IPC: H01L21/56 ,  H01L21/02 ,  H01L21/48

Abstract: A manufacturing method of a package structure including the following steps is provided. A carrier is provided. An anti-warpage structure is formed on the carrier. And a redistribution layer is formed on the carrier. In the normal direction of the carrier, a warpage trend of the anti-warpage structure is opposite to a warpage trend of the redistribution layer.

公开(公告)号：US20210375643A1

公开(公告)日：2021-12-02

申请号：US17402595

申请日：2021-08-15

Applicant: InnoLux Corporation

Inventor： Chia-Chieh Fan ,  Chin-Lung Ting ,  Cheng-Chi Wang ,  Ming-Tsang Wu

IPC: H01L21/56 ,  H01L21/683 ,  H01L21/48 ,  H01L25/00 ,  H01L23/00

Abstract: A manufacturing method of semiconductor device includes providing a substrate, forming a sacrificial layer on the substrate, forming a resin layer on the sacrificial layer, disposing first chips on the sacrificial layer, and forming a first dielectric layer having trenches and surrounding the first chips, wherein an upper surface of the first dielectric layer and an upper surface of the resin layer are at a same plane.

公开(公告)号：US11062979B2

公开(公告)日：2021-07-13

申请号：US16891916

申请日：2020-06-03

Applicant: InnoLux Corporation

Inventor： Ming-Yen Weng ,  Ker-Yih Kao ,  Chia-Chi Ho ,  Tsutomu Shinozaki ,  Cheng-Chi Wang ,  I-Yin Li

IPC: H01L23/66 ,  H01L23/48 ,  H01Q1/38 ,  H01L23/485 ,  H01L21/311 ,  H01L25/065 ,  H01L21/48

Abstract: A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 μm to 10 μm. A high-frequency device is also provided.

公开(公告)号：US20200051902A1

公开(公告)日：2020-02-13

申请号：US16655201

申请日：2019-10-16

Applicant: InnoLux Corporation

Inventor： Hsueh-Hsuan Chou ,  Chia-Chieh Fan ,  Cheng-Chi Wang ,  Kuan-Jen Wang

IPC: H01L23/498 ,  H01L21/66 ,  H01L21/48 ,  H01L21/683 ,  H01L23/00 ,  H01L21/78 ,  H01L21/56 ,  H01L23/31

Abstract: A package structure includes a redistribution layer having a first surface, a second surface disposed opposite to the first surface, and at least one sidewall connected to the first surface and the second surface, at least one bonding electrode disposed on the first surface of the redistribution layer, and a mounting layer disposed on the second surface of the redistribution layer. The mounting layer includes a plurality of conductive pads that are spaced apart from each other. At least one of the conductive pads is exposed by the sidewall of the redistribution layer.

公开(公告)号：US20190035715A1

公开(公告)日：2019-01-31

申请号：US16018003

申请日：2018-06-25

Applicant: InnoLux Corporation

Inventor： Hsueh-Hsuan Chou ,  Chia-Chieh Fan ,  Kuan-Jen Wang ,  Cheng-Chi Wang ,  Yi-Hung Lin ,  Li-Wei Sung

IPC: H01L23/498 ,  H01L23/31 ,  H01L21/683 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00

Abstract: The present disclosure provides a package device including a conductive pad, a protecting block, and a redistribution layer. The protecting block is disposed on the conductive pad. The redistribution layer is disposed on the protecting block, and the conductive pad is electrically connected to the redistribution layer through the protecting block.

公开(公告)号：US12224226B2

公开(公告)日：2025-02-11

申请号：US17898410

申请日：2022-08-29

Applicant: InnoLux Corporation

Inventor： Chin-Lung Ting ,  Chung-Kuang Wei ,  Cheng-Chi Wang ,  Yeong-E Chen ,  Yi-Hung Lin

IPC: H05K1/02 ,  H01L23/00 ,  H01L23/44 ,  H01L23/498 ,  H01L25/065 ,  H01L25/075

Abstract: An electronic device is disclosed. The electronic device includes a circuit layer, an electronic element and a thermal conducting element. The electronic element is disposed on the circuit layer and electrically connected to the circuit layer. The thermal conducting element is disposed between the circuit layer and the electronic element. The thermal conducting element is used for performing heat exchange with the electronic element.

公开(公告)号：US20250029910A1

公开(公告)日：2025-01-23

申请号：US18909897

申请日：2024-10-08

Applicant: Innolux Corporation

Inventor： Yeong-E Chen ,  Yi-Hung Lin ,  Cheng-En Cheng ,  Wen-Hsiang Liao ,  Cheng-Chi Wang

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/00

Abstract: An electronic component includes a first electronic unit including a plurality of pads, a first conductive layer, a second conductive layer, a first insulating layer having a first thickness, a second insulating layer having a second thickness, a second electronic unit, and a solder ball. The first conductive layer is disposed between the first electronic unit and the second conductive layer, and electrically connected to at least one of the pads through a conductive via. The first insulating layer is disposed between the first conductive layer and the second conductive layer. The second conductive layer is disposed between the first insulating layer and the second insulating layer. The first thickness is different from the second thickness. The second conductive layer is disposed between the first conductive layer and the second electronic unit. The second conductive layer is electrically connected to the second electronic unit through the solder ball.

公开(公告)号：US12148685B2

公开(公告)日：2024-11-19

申请号：US17530373

申请日：2021-11-18

Applicant: Innolux Corporation

Inventor： Hung-Sheng Chou ,  Wen-Hsiang Liao ,  Kuo-Jung Fan ,  Heng-Shen Yeh ,  Cheng-Chi Wang

IPC: H01L23/498 ,  H01L21/48 ,  H01L21/683

Abstract: A redistribution layer structure is provided. The redistribution layer structure includes a first metal layer and a first dielectric layer disposed on the first metal layer. A range of a difference between a coefficient of thermal expansion of the first dielectric layer and a coefficient of thermal expansion of the first metal layer is 0% to 70% of the coefficient of thermal expansion of the first dielectric layer.

公开(公告)号：US12148630B2

公开(公告)日：2024-11-19

申请号：US17507915

申请日：2021-10-22

Applicant: InnoLux Corporation

Inventor： Yeong-E Chen ,  Cheng-En Cheng ,  Yu-Ting Liu ,  Cheng-Chi Wang

IPC: H01L21/48 ,  H01L21/66 ,  H01L23/544 ,  H01L21/683

Abstract: The application relates to a method for manufacturing an electronic device, and in particular, to a method for manufacturing an electronic device with a carrier substrate. The method includes: providing a carrier, forming a first base layer on the carrier; and forming working units on the first base layer. The working units are spaced apart from one another.

公开(公告)号：US20230377904A1

公开(公告)日：2023-11-23

申请号：US18366576

申请日：2023-08-07

Applicant: Innolux Corporation

Inventor： Chuan-Ming Yeh ,  Heng-Shen Yeh ,  Kuo-Jung Fan ,  Cheng-Chi Wang

IPC: H01L21/48 ,  H01L23/498 ,  H05K1/02 ,  H01L23/00 ,  H05K3/00 ,  H05K3/46

CPC classification number: H01L21/4857 ,  H01L23/49822 ,  H05K1/0271 ,  H01L23/562 ,  H05K3/007 ,  H05K3/4647 ,  H05K2201/068

Abstract: The embodiment of the disclosure provides a composite layer circuit element of an electronic device. The composite layer circuit element includes a first dielectric layer, a first circuit layer and a second dielectric layer. The first circuit layer is disposed on the first dielectric layer, and the second dielectric layer is disposed on the first circuit layer. A thickness of the first dielectric layer is greater than a thickness of the second dielectric layer in a cross section view.