公开(公告)号：US09093226B2

公开(公告)日：2015-07-28

申请号：US13621354

申请日：2012-09-17

Applicant: Intel Corporation

Inventor： Donald S. Gardner ,  Wei Jin ,  Zhaohui Chen ,  Charles W. Holzwarth ,  Cary L. Pint ,  Bum Ki Moon ,  John L. Gustafson

IPC: H01G9/00 ,  H01G11/26 ,  H01G11/04 ,  H01G11/30 ,  H01G11/86 ,  H01L49/02

CPC classification number: H01G11/26 ,  H01G9/0029 ,  H01G11/04 ,  H01G11/30 ,  H01G11/86 ,  H01L28/82 ,  Y02E60/13 ,  Y10T29/417

Abstract: An energy storage device includes a first electrode (110, 510) including a first plurality of channels (111, 512) that contain a first electrolyte (150, 514) and a second electrode (120, 520) including a second plurality of channels (121, 522) that contain a second electrolyte (524). The first electrode has a first surface (115, 511) and the second electrode has a second surface (125, 521). At least one of the first and second electrodes is a porous silicon electrode, and at least one of the first and second surfaces comprises a passivating layer (535).

Abstract translation: 能量存储装置包括包括第一多个通道（111,512）的第一电极（110,510），第一电极包含第一电解质（150,514）和包括第二多个通道的第二电极（120,520） 121,522），其包含第二电解质（524）。 第一电极具有第一表面（115,511），第二电极具有第二表面（125,521）。 第一和第二电极中的至少一个是多孔硅电极，并且第一表面和第二表面中的至少一个包括钝化层（535）。

公开(公告)号：US10483249B2

公开(公告)日：2019-11-19

申请号：US16060658

申请日：2015-12-26

Applicant: Intel Corporation

Inventor： Donald S. Gardner ,  Edward A. Burton ,  Gerhard Schrom ,  Larry E. Mosley

IPC: H01L25/16 ,  H01L25/07 ,  H01L23/498 ,  H01L23/00 ,  H01L49/02 ,  H01L21/50 ,  H01L29/20

Abstract: Embodiments are generally directed to integrated passive devices on chip. An embodiment of a device includes a semiconductor die; a semiconductor die package, a first side of the package being coupled with the semiconductor die; and one or more separate dies to provide passive components for operation of the semiconductor die, wherein the passive components for operation of the semiconductor die includes inductors.

公开(公告)号：US20190198866A1

公开(公告)日：2019-06-27

申请号：US16286394

申请日：2019-02-26

Applicant: Intel Corporation

Inventor： Donald S. Gardner ,  Charles W. Holzwarth ,  Bum Ki Moon ,  Yang Liu ,  Priyanka Pande ,  Shanthi Murali ,  Nicolas Cirigliano ,  Zhaohui Chen

IPC: H01M4/36 ,  H01M4/38 ,  H01M4/485 ,  H01M4/587 ,  H01M4/62 ,  H01M4/48

CPC classification number: H01M4/366 ,  H01M4/38 ,  H01M4/386 ,  H01M4/387 ,  H01M4/483 ,  H01M4/485 ,  H01M4/587 ,  H01M4/62 ,  H01M2004/021 ,  H01M2004/027 ,  Y02E60/122 ,  Y02P70/54 ,  Y10T29/49108 ,  Y10T29/49115

Abstract: Electrodes, energy storage devices using such electrodes, and associated methods are disclosed. In an example, an electrode for use in an energy storage device can comprise porous disks comprising a porous material, the porous disks having a plurality of channels and a surface, the plurality of channels opening to the surface; and a structural material encapsulating the porous disks; where the structural material provides structural stability to the electrode during use.

公开(公告)号：US20160358716A1

公开(公告)日：2016-12-08

申请号：US15239285

申请日：2016-08-17

Applicant: Intel Corporation

Inventor： Donald S. Gardner ,  Cary L. Pint ,  Scott B. Clendenning

IPC: H01G11/02 ,  H01G11/84 ,  H01G11/30 ,  H01G11/54 ,  H01G11/52 ,  H01G11/26

CPC classification number: H01G11/02 ,  G06F1/1635 ,  H01G9/04 ,  H01G11/26 ,  H01G11/30 ,  H01G11/46 ,  H01G11/52 ,  H01G11/54 ,  H01G11/84 ,  H04M1/0262 ,  H04M2001/0204 ,  Y02E60/13 ,  Y10T29/49115

Abstract: An energy storage device comprises a first porous semiconducting structure (510) comprising a first plurality of channels (511) that contain a first electrolyte (514) and a second porous semiconducting structure (520) comprising a second plurality of channels (521) that contain a second electrolyte (524). In one embodiment, the energy storage device further comprises a film (535) on at least one of the first and second porous semiconducting structures, the film comprising a material capable of exhibiting reversible electron transfer reactions. In another embodiment, at least one of the first and second electrolytes contains a plurality of metal ions. In another embodiment, the first and second electrolytes, taken together, comprise a redox system.

Abstract translation: 能量存储装置包括第一多孔半导体结构（510），第一多孔半导体结构（510）包括含有第一电解质（514）的第一多个通道（511）和包含第二多个通道（521）的第二多孔半导体结构（520） 第二电解质（524）。 在一个实施例中，能量存储装置还包括在第一和第二多孔半导体结构中的至少一个上的膜（535），该膜包括能够显示可逆电子转移反应的材料。 在另一个实施方案中，第一和第二电解质中的至少一个包含多个金属离子。 在另一个实施方案中，第一和第二电解质一起组成氧化还原体系。

公开(公告)号：US09368290B2

公开(公告)日：2016-06-14

申请号：US14644632

申请日：2015-03-11

Applicant: Intel Corporation

Inventor： Donald S. Gardner ,  Eric C. Hannah ,  Rong Chen ,  John Gustafson

IPC: H01G11/26 ,  H01G11/36 ,  H01G11/86 ,  H01G9/048 ,  H01G2/02 ,  H01G11/52 ,  H01G11/54 ,  H01L49/02

CPC classification number: H01G11/86 ,  H01G2/02 ,  H01G9/048 ,  H01G11/24 ,  H01G11/26 ,  H01G11/36 ,  H01G11/52 ,  H01G11/54 ,  H01L28/82 ,  Y02E60/13

Abstract: In one embodiment a charge storage device includes first (110) and second (120) electrically conductive structures separated from each other by a separator (130). At least one of the first and second electrically conductive structures includes a porous structure containing multiple channels (111, 121). Each one of the channels has an opening (112, 122) to a surface (115, 125) of the porous structure. In another embodiment the charge storage device includes multiple nanostructures (610) and an electrolyte (650) in physical contact with at least some of the nanostructures. A material (615) having a dielectric constant of at least 3.9 may be located between the electrolyte and the nanostructures.

公开(公告)号：US10777366B2

公开(公告)日：2020-09-15

申请号：US15936427

申请日：2018-03-26

Applicant: Intel Corporation

Inventor： Donald S. Gardner ,  Zhaohui Chen ,  Wei C. Jin ,  Scott B. Clendenning ,  Eric C. Hannah ,  Tomm V. Aldridge ,  John L. Gustafson

IPC: H01G11/26 ,  H01G11/86 ,  H01G11/58 ,  H01G11/14 ,  H01G11/30

Abstract: Methods of increasing an energy density of an energy storage device involve increasing the capacitance of the energy storage device by depositing a material into a porous structure of the energy storage device using an atomic layer deposition process, by performing a procedure designed to increase a distance to which an electrolyte penetrates within channels of the porous structure, or by placing a dielectric material into the porous structure. Another method involves annealing the energy storage device in order to cause an electrically conductive substance to diffuse to a surface of the structure and form an electrically conductive layer thereon. Another method of increasing energy density involves increasing the breakdown voltage and another method involves forming a pseudocapacitor. A method of increasing an achievable power output of an energy storage device involves depositing an electrically conductive material into the porous structure.

公开(公告)号：US10354786B2

公开(公告)日：2019-07-16

申请号：US15283350

申请日：2016-10-01

Applicant: Intel Corporation

Inventor： Donald S. Gardner ,  Gerhard Schrom ,  Edward A. Burton

IPC: H01L23/64 ,  H01F1/147 ,  H01F10/06 ,  H01F27/255 ,  H01F27/28 ,  H01F41/04 ,  H01F41/16 ,  H01F41/32 ,  H01L25/18 ,  H01L49/02 ,  H05K3/00 ,  H01F17/00 ,  H01F27/36 ,  H05K1/16 ,  H01F41/26 ,  H01F41/18

Abstract: Embodiments are generally directed to hybrid magnetic material structures for electronic devices and circuits. An embodiment of an inductor includes a first layer of magnetic film material applied on a substrate, one or more conductors placed on the first layer of magnetic film material, and a second layer of magnetic particles, wherein the magnetic particles are suspended in an insulating medium.

公开(公告)号：US20170207035A1

公开(公告)日：2017-07-20

申请号：US15479189

申请日：2017-04-04

Applicant: INTEL CORPORATION

Inventor： Donald S. Gardner ,  Pavan Kumar

IPC: H01G11/56 ,  G06F1/32 ,  H02M7/537

CPC classification number: H01G11/56 ,  G06F1/04 ,  G06F1/324 ,  H01G11/04 ,  H01G11/08 ,  H02J7/00 ,  H02M3/07 ,  H02M7/537 ,  Y02E60/13

Abstract: In one embodiment of the invention, a low frequency converter is described that includes a first electrochemical capacitor to charge to an input voltage and a second electrochemical capacitor that is coupled to the first electrochemical capacitor. The second electrochemical capacitor is associated with an output voltage of the low frequency converter. Each electrochemical capacitor may have a capacitance of at least one millifarad (mF) and a switching frequency that is less than one kilohertz.

公开(公告)号：US09640332B2

公开(公告)日：2017-05-02

申请号：US14136933

申请日：2013-12-20

Applicant: Intel Corporation

Inventor： Donald S. Gardner ,  Chunlei Wang ,  Yang Liu ,  Zhaohui Chen ,  Charles W. Holzwarth ,  Bum Ki Moon

IPC: H01G11/32 ,  H01G11/30 ,  H01G11/04 ,  H01G11/06 ,  H01G11/24 ,  H01G11/46 ,  H01G11/62

CPC classification number: H01G11/04 ,  H01G11/24 ,  H01G11/30 ,  H01G11/36 ,  H01G11/38 ,  H01G11/46 ,  H01G11/52 ,  H01G11/54 ,  H01G11/56 ,  H01G11/62 ,  H01G11/82 ,  Y02E60/13

Abstract: Hybrid electrochemical capacitors, electronic devices using such capacitors, and associated methods are disclosed. In an example, a hybrid electrochemical capacitor can include a first electrode made from Mg, Na, Zn, Al, Sn, or Li, a second electrode made from a porous material such as porous carbon or passivated porous silicon, and an electrolyte. The hybrid electrochemical capacitors can have enhanced voltage and energy density compared to other electrochemical capacitors, and enhanced power density compared to batteries.

公开(公告)号：US09466662B2

公开(公告)日：2016-10-11

申请号：US13730308

申请日：2012-12-28

Applicant: Intel Corporation

Inventor： Donald S. Gardner ,  Larry E. Mosley

IPC: H01L21/02 ,  H01L49/02

CPC classification number: H01L28/90

Abstract: In one embodiment, an energy storage device (e.g., capacitor) may include a porous silicon layer formed within a substrate. The porous silicon layer includes pores with a mean pore diameter less than approximately 100 nanometers. A first conductive layer is formed on the porous silicon layer and a first dielectric layer is formed on the first conductive layer. A second conductive layer is formed on the first dielectric layer to form the capacitor.

Abstract translation: 在一个实施例中，能量存储装置（例如，电容器）可以包括在衬底内形成的多孔硅层。 多孔硅层包括平均孔径小于约100纳米的孔。 第一导电层形成在多孔硅层上，第一介电层形成在第一导电层上。 在第一介电层上形成第二导电层以形成电容器。