公开(公告)号：US20130089817A1

公开(公告)日：2013-04-11

申请号：US13644708

申请日：2012-10-04

Applicant: JSR CORPORATION

Inventor： Hiromu MIYATA ,  Hiromitsu NAKASHIMA ,  Masafumi YOSHIDA

IPC: G03F7/004 ,  G03F7/20

CPC classification number: G03F7/0046 ,  C08F220/28 ,  C08F2220/282 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/38

Abstract: A photoresist composition includes a polymer that includes a first structural unit shown by a formula (1), and an acid generator. R1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. R2 represents a divalent hydrocarbon group having 1 to 10 carbon atoms. A represents —COO—*, —OCO—*, —O—, —S—, or —NH—, wherein “*” indicates a site bonded to R3. R3 represents a single bond or a divalent hydrocarbon group having 1 to 10 carbon atoms. The polymer preferably further includes a second structural unit that includes an acid-labile group.

Abstract translation: 光致抗蚀剂组合物包括包含式（1）所示的第一结构单元和酸发生剂的聚合物。 R1表示氢原子，氟原子，甲基或三氟甲基。 R2表示碳原子数为1〜10的二价烃基。 A表示-COO- *，-OCO- *，-O-，-S-或-NH-，其中*表示与R3键合的位点。 R3表示单键或碳原子数为1〜10的二价烃基。 聚合物优选还包括包含酸不稳定基团的第二结构单元。

公开(公告)号：US20220299873A1

公开(公告)日：2022-09-22

申请号：US17829531

申请日：2022-06-01

Applicant: JSR CORPORATION

Inventor： Ryuichi NEMOTO ,  Ryotaro TANAKA ,  Taiichi FURUKAWA ,  Katsuaki NISHIKORI ,  Hiromitsu NAKASHIMA

IPC: G03F7/039 ,  G03F7/038 ,  C07C69/734 ,  C07D307/00 ,  C07C69/736 ,  C07C69/96 ,  C08F220/28 ,  C08F220/38 ,  C08F220/36 ,  C08F212/14 ,  C08F220/30

Abstract: A radiation-sensitive resin composition includes: a first polymer including a structural unit including an acid-labile group; a second polymer including a structural unit represented by formula (1); and a radiation-sensitive acid generator. In the formula (1), A represents an oxygen atom or a sulfur atom; a sum of m and n is 2 or 3, wherein m is 1 or 2, and n is 1 or 2; X represents a single bond or a divalent organic group having 1 to 20 carbon atoms; and R1 represents a monovalent organic group including a fluorine atom.

公开(公告)号：US20210389671A1

公开(公告)日：2021-12-16

申请号：US17458783

申请日：2021-08-27

Applicant: JSR CORPORATION

Inventor： Tetsurou KANEKO ,  Hiromitsu NAKASHIMA ,  Yuushi MATSUMURA ,  Junya SUZUKI ,  Shuto MORI ,  Hiroyuki ISHII

IPC: G03F7/038 ,  G03F7/20 ,  G03F7/004 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40

Abstract: A radiation-sensitive resin composition includes: a first polymer having a first structural unit which includes a phenolic hydroxyl group, and a second structural unit which includes an acid-labile group and a carboxy group which is protected by the acid-labile group; a second polymer having a third structural unit represented by the following formula (S-1), and a fourth structural unit which is a structural unit other than the third structural unit and is represented by the following formula (S-2); and a radiation-sensitive acid generator, wherein the acid-labile group includes a monocyclic or polycyclic ring structure having no fewer than 3 and no more than 20 ring atoms.

公开(公告)号：US20170329228A1

公开(公告)日：2017-11-16

申请号：US15592373

申请日：2017-05-11

Applicant: JSR CORPORATION

Inventor： Tomohiko SAKURAI ,  Sousuke OOSAWA ,  Hiromitsu NAKASHIMA ,  Kousuke TERAYAMA

IPC: G03F7/11 ,  G03F7/38 ,  G03F7/32 ,  G03F7/20 ,  G03F7/16 ,  G03F7/039 ,  G03F7/038 ,  G03F7/40 ,  G03F7/004

CPC classification number: G03F7/11 ,  G03F7/2041

Abstract: A resist pattern-forming method includes applying a photoresist composition directly or indirectly on a front face of a substrate to form a photoresist film. A topcoat layer is laminated directly or indirectly on a front face of the photoresist film. The photoresist film is subjected to liquid immersion lithography in a presence of a liquid immersion liquid on a front face of the topcoat layer. Part of the topcoat layer is removed after subjecting the photoresist film to the liquid immersion lithography. The photoresist film is developed after the part of the topcoat layer is removed.

公开(公告)号：US20140162190A1

公开(公告)日：2014-06-12

申请号：US14178622

申请日：2014-02-12

Applicant: JSR CORPORATION

Inventor： Hiroki NAKAGAWA ,  Hiromitsu NAKASHIMA ,  Gouji WAKAMATSU ,  Kentarou HARADA ,  Yukio NISHIMURA ,  Takeo SHIOYA

IPC: G03F7/004

CPC classification number: G03F7/0046 ,  C08F220/18 ,  C08F220/24 ,  C08F220/28 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/38 ,  G03F7/40

Abstract: A fluorine-containing polymer for use in a radiation-sensitive resin composition is used for forming a photoresist film in a process of forming a resist pattern, including a liquid immersion lithographic process in which radiation is emitted through a liquid having a refractive index larger than the refractive index of air at a wavelength of 193 nm, and being present between a lens and the photoresist film. The fluorine-containing polymer has a weight average molecular weight determined by gel permeation chromatography in the range from 1,000 to 50,000 and a receding contact angle with water and the photoresist film formed therefrom is 70° or more.

Abstract translation: 用于辐射敏感性树脂组合物的含氟聚合物用于在形成抗蚀剂图案的工艺中形成光致抗蚀剂膜，包括液浸光刻工艺，其中通过折射率大于 波长为193nm的空气的折射率，并且存在于透镜和光致抗蚀剂膜之间。 含氟聚合物的重均分子量通过凝胶渗透色谱法测定为1000〜50,000，与水的后退接触角和由其形成的光致抗蚀剂膜为70°以上。

公开(公告)号：US20130233825A1

公开(公告)日：2013-09-12

申请号：US13787674

申请日：2013-03-06

Applicant: JSR CORPORATION

Inventor： Shunsuke KURITA ,  Kazunori TAKANASHI ,  Hiromitsu NAKASHIMA ,  Tooru KIMURA

IPC: G03F7/09

CPC classification number: G03F7/0757 ,  G03F7/0752 ,  G03F7/094

Abstract: A composition for forming a resist underlayer film includes a polysiloxane and a solvent. The solvent includes an organic solvent having a standard boiling point of no less than 150.0° C., and water. A content of the organic solvent is no less than 1% by mass and no greater than 50% by mass with respect to a total amount of the solvent. A content of water is no less than 1% by mass and no greater than 30% by mass with respect to the total amount of the solvent.

Abstract translation: 用于形成抗蚀剂下层膜的组合物包括聚硅氧烷和溶剂。 溶剂包括标准沸点不低于150.0℃的有机溶剂和水。 相对于溶剂的总量，有机溶剂的含量为1质量％以上且50质量％以下。 相对于溶剂的总量，水的含量为1质量％以上且30质量％以下。

公开(公告)号：US20130216948A1

公开(公告)日：2013-08-22

申请号：US13851158

申请日：2013-03-27

Applicant: JSR CORPORATION

Inventor： Kazuki KASAHARA ,  Hiromitsu NAKASHIMA ,  Masafumi HORI ,  Masafumi YOSHIDA

IPC: G03F7/004

CPC classification number: G03F7/004 ,  C07D307/93 ,  C07D493/18 ,  C08F220/20 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/38 ,  H01L21/0274 ,  H01L21/0275

Abstract: A radiation-sensitive resin composition for forming a resist film includes a polymer including a first structural unit represented by a formula (1) and a second structural unit represented by a formula (2). The first structural unit and the second structural unit are included in an identical polymer molecule or different polymer molecules. R1 represents a hydrogen atom or a methyl group. Q represents a divalent linking group having 1 to 4 carbon atoms. X represents a monovalent lactone group. A part or all of hydrogen atoms included in the monovalent lactone group represented by X are not substituted or substituted. R2 represents a hydrogen atom or a methyl group. Y represents a monovalent lactone group. A part or all of hydrogen atoms included in the monovalent lactone group represented by Y are not substituted or substituted.

Abstract translation: 用于形成抗蚀剂膜的辐射敏感性树脂组合物包括含有由式（1）表示的第一结构单元和由式（2）表示的第二结构单元的聚合物。 第一结构单元和第二结构单元包含在相同的聚合物分子或不同的聚合物分子中。 R1表示氢原子或甲基。 Q表示碳原子数为1〜4的二价连接基团。 X表示单价内酯基。 由X表示的一价内酯基中的一部分或全部氢原子不被取代或取代。 R2表示氢原子或甲基。 Y表示单价内酯基。 由Y表示的一价内酯基中包含的一部分或全部氢原子不被取代或取代。