公开(公告)号：US20240231231A1

公开(公告)日：2024-07-11

申请号：US18440124

申请日：2024-02-13

Applicant: JSR CORPORATION

Inventor： Daiki TATSUBO ,  Tomoharu KAWAZU ,  Hiroyuki MIYAUCHI ,  Yuya HAYASHI ,  Takashi KATAGIRI ,  Ryotaro TANAKA

IPC: G03F7/11 ,  C09D161/06 ,  C09D161/12 ,  H01L21/308 ,  H01L21/311

CPC classification number: G03F7/11 ,  C09D161/06 ,  C09D161/12 ,  H01L21/3081 ,  H01L21/31116

Abstract: A method for forming a resist underlayer film includes applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a coating film. The coating film is heated at a heating temperature of higher than 450° C. and 600° C. or lower in an atmosphere having an oxygen concentration of less than 0.01% by volume. The composition for forming a resist underlayer film includes: a compound including an aromatic ring; a polymer which thermally decomposes at the heating temperature in heating the coating film, and which is other than the compound; and a solvent. The compound has a molecular weight of 400 or more. A content of the polymer is less than a content of the compound in the composition for forming a resist underlayer film.

公开(公告)号：US20220299873A1

公开(公告)日：2022-09-22

申请号：US17829531

申请日：2022-06-01

Applicant: JSR CORPORATION

Inventor： Ryuichi NEMOTO ,  Ryotaro TANAKA ,  Taiichi FURUKAWA ,  Katsuaki NISHIKORI ,  Hiromitsu NAKASHIMA

IPC: G03F7/039 ,  G03F7/038 ,  C07C69/734 ,  C07D307/00 ,  C07C69/736 ,  C07C69/96 ,  C08F220/28 ,  C08F220/38 ,  C08F220/36 ,  C08F212/14 ,  C08F220/30

Abstract: A radiation-sensitive resin composition includes: a first polymer including a structural unit including an acid-labile group; a second polymer including a structural unit represented by formula (1); and a radiation-sensitive acid generator. In the formula (1), A represents an oxygen atom or a sulfur atom; a sum of m and n is 2 or 3, wherein m is 1 or 2, and n is 1 or 2; X represents a single bond or a divalent organic group having 1 to 20 carbon atoms; and R1 represents a monovalent organic group including a fluorine atom.

公开(公告)号：US20240142876A1

公开(公告)日：2024-05-02

申请号：US18528951

申请日：2023-12-05

Applicant: JSR CORPORATION

Inventor： Hiroyuki MIYAUCHI ,  Satoshi DEI ,  Ryotaro TANAKA ,  Eiji YONEDA ,  Sho YOSHINAKA

IPC: G03F7/11 ,  G03F7/029 ,  G03F7/20 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/11 ,  G03F7/029 ,  G03F7/2004 ,  G03F7/322 ,  G03F7/327 ,  H01L21/0275

Abstract: A method for manufacturing a semiconductor substrate, includes: directly or indirectly applying a composition for forming a resist underlayer film to a substrate to form a resist under film directly or indirectly on the substrate; applying a composition for forming a resist film to the resist underlayer film to form a resist film on the resist underlayer film; exposing the resist film to radiation; and developing the exposed resist film by a developer. The composition for forming a resist underlayer film includes: a polymer; an onium salt that is capable of generating at least one polar group selected from the group consisting of a carboxy group and a hydroxy group by radiation or heat; and a solvent.