公开(公告)号：US20080264565A1

公开(公告)日：2008-10-30

申请号：US11796211

申请日：2007-04-27

申请人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

发明人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

IPC分类号： C04B35/48 ,  C23C16/22 ,  H01L21/3065

CPC分类号： C23C16/4404 ,  C04B35/111 ,  C04B35/505 ,  C04B41/009 ,  C04B41/5045 ,  C04B41/5346 ,  C04B41/87 ,  C04B41/91 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3244 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2235/9692 ,  H01J37/32467 ,  C04B41/4527 ,  C04B41/5031 ,  C04B41/5042 ,  C04B35/10 ,  C04B35/14 ,  C04B35/581

摘要： A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing. The ceramic article includes ceramic which is multi-phased, typically including two phase to three phases. The ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole % to about 30 mole %.

摘要翻译： 一种耐半导体加工中含卤素等离子体侵蚀的陶瓷制品。 陶瓷制品包括多相陶瓷，通常包括两相至三相。 陶瓷由摩尔浓度范围为约50摩尔％至约75摩尔％的氧化钇形成; 摩尔浓度范围为约10摩尔％至约30摩尔％的氧化锆; 和选自氧化铝，氧化铪，氧化钪，氧化钕，氧化铌，氧化钐，氧化镱，氧化铒，氧化铈及其组合中的至少一种其它组分，摩尔浓度范围为 约10摩尔％至约30摩尔％。

公开(公告)号：US08034734B2

公开(公告)日：2011-10-11

申请号：US12660068

申请日：2010-02-19

申请人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

发明人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

IPC分类号： C04B35/505 ,  C04B35/486

CPC分类号： C04B35/505 ,  B32B18/00 ,  C04B35/486 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3229 ,  C04B2235/3244 ,  C04B2235/6582 ,  C04B2235/668 ,  C04B2235/762 ,  C04B2235/80 ,  C04B2235/9669 ,  H01J37/32467 ,  H01J37/32504 ,  Y10T428/31678

摘要： A solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.

摘要翻译： 用于半导体加工的固体溶液陶瓷制品，其耐受含卤素等离子体侵蚀。 含固溶体的陶瓷制品由氧化钇和氧化锆的组合形成。 在第一个实施方案中，陶瓷制品包括由摩尔浓度为约90摩尔％至约70摩尔％的氧化钇形成的陶瓷，摩尔浓度为约10摩尔％至约30摩尔％的氧化锆， 。 在第二个实施方案中，陶瓷制品包括由摩尔浓度为约96摩尔％至约94摩尔％的氧化锆形成的陶瓷，摩尔浓度为约4摩尔％至约6摩尔％的氧化钇 。

公开(公告)号：US20150143677A1

公开(公告)日：2015-05-28

申请号：US13998723

申请日：2013-11-26

申请人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

发明人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

IPC分类号： H01L21/67

CPC分类号： H01L21/67011 ,  C04B35/486 ,  C04B35/505 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2235/9669 ,  Y10T29/41

摘要： A solid solution-comprising ceramic article useful in semiconductor processing, which article may be in the form of a solid, bulk ceramic, or may be in the form of a substrate having a ceramic coating of the same composition as the bulk ceramic material on at least one outer surface. The ceramic article is resistant to erosion by halogen-containing plasmas and provides advantageous mechanical properties. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. The ceramic-comprising article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 91 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 9 mole %.

摘要翻译： 一种可用于半导体加工的固体溶液陶瓷制品，该制品可以是固体，本体陶瓷的形式，或者可以是具有与在其上的块状陶瓷材料相同组成的陶瓷涂层的基材形式 至少一个外表面。 陶瓷制品耐受含卤素等离子体侵蚀，并提供有利的机械性能。 含固溶体的陶瓷制品由氧化钇和氧化锆的组合形成。 包含陶瓷的制品包括由摩尔浓度为约96摩尔％至约91摩尔％的氧化锆形成的陶瓷和摩尔浓度为约4摩尔％至约9摩尔％的氧化钇。

公开(公告)号：US20130224498A1

公开(公告)日：2013-08-29

申请号：US13986040

申请日：2013-03-25

申请人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

发明人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

IPC分类号： C04B35/505

CPC分类号： C04B35/505 ,  B32B18/00 ,  C04B35/486 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3229 ,  C04B2235/3244 ,  C04B2235/6582 ,  C04B2235/668 ,  C04B2235/762 ,  C04B2235/80 ,  C04B2235/9669 ,  H01J37/32467 ,  H01J37/32504 ,  Y10T428/31678

摘要： A solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide, zirconium oxide, and aluminum oxide. In a first embodiment, the solid solution-comprising ceramic article is a solid, sintered body of the solid solution ceramic material. In a second embodiment, the solid solution-comprising article comprises a substrate underlying a solid solution-comprising coating.

公开(公告)号：US20080264564A1

公开(公告)日：2008-10-30

申请号：US11796210

申请日：2007-04-27

申请人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

发明人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

IPC分类号： C04B35/48 ,  H01L21/3065

CPC分类号： C04B35/505 ,  B32B18/00 ,  C04B35/486 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3229 ,  C04B2235/3244 ,  C04B2235/6582 ,  C04B2235/668 ,  C04B2235/762 ,  C04B2235/80 ,  C04B2235/9669 ,  H01J37/32467 ,  H01J37/32504 ,  Y10T428/31678

摘要： A ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.

摘要翻译： 用于半导体加工的陶瓷制品，其耐受含卤素等离子体的侵蚀。 陶瓷制品由氧化钇和氧化锆的组合形成。 在第一个实施方案中，陶瓷制品包括由摩尔浓度为约90摩尔％至约70摩尔％的氧化钇形成的陶瓷，摩尔浓度为约10摩尔％至约30摩尔％的氧化锆， 。 在第二个实施方案中，陶瓷制品包括由摩尔浓度为约96摩尔％至约94摩尔％的氧化锆形成的陶瓷，摩尔浓度为约4摩尔％至约6摩尔％的氧化钇 。

公开(公告)号：US20090056745A1

公开(公告)日：2009-03-05

申请号：US11845620

申请日：2007-08-27

申请人： JENNIFER Y. SUN ,  Senh Thach ,  Xi Zhu ,  Li Xu ,  Anisul Khan

发明人： JENNIFER Y. SUN ,  Senh Thach ,  Xi Zhu ,  Li Xu ,  Anisul Khan

IPC分类号： C23G1/02

CPC分类号： C23C16/4407 ,  C11D7/08 ,  C11D7/10 ,  C11D11/0047 ,  C11D11/0064

摘要： A cleaning process for recovering an anodized aluminum part is particularly useful when the part has been exposed to a fluorine-containing plasma in etch reactor. The part is bathed in an agitated solution of a fluoride acid, such as ammonium fluoride, which converts aluminum fluoride to a soluble fluoride. The part is rinsed in water. The pores of the cleaned anodization may be resealed by a submerging the part in hot agitated deionized water.

摘要翻译： 当在蚀刻反应器中暴露于含氟等离子体时，用于回收阳极氧化铝部件的清洁方法是特别有用的。 将该部分浸渍在氟化物酸如氟化铵的搅拌溶液中，其将氟化铝转化为可溶性氟化物。 该部件在水中冲洗。 清洁的阳极氧化的孔可以通过将部件浸没在热的搅拌去离子水中来重新密封。

公开(公告)号：US07696117B2

公开(公告)日：2010-04-13

申请号：US11796211

申请日：2007-04-27

申请人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

发明人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

IPC分类号： C04B35/00

CPC分类号： C23C16/4404 ,  C04B35/111 ,  C04B35/505 ,  C04B41/009 ,  C04B41/5045 ,  C04B41/5346 ,  C04B41/87 ,  C04B41/91 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3244 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2235/9692 ,  H01J37/32467 ,  C04B41/4527 ,  C04B41/5031 ,  C04B41/5042 ,  C04B35/10 ,  C04B35/14 ,  C04B35/581

摘要： A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing. The ceramic article includes ceramic which is multi-phased, typically including two phase to three phases. The ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole % to about 30 mole %.

摘要翻译： 一种耐半导体加工中含卤素等离子体侵蚀的陶瓷制品。 陶瓷制品包括多相陶瓷，通常包括两相至三相。 陶瓷由摩尔浓度范围为约50摩尔％至约75摩尔％的氧化钇形成; 摩尔浓度范围为约10摩尔％至约30摩尔％的氧化锆; 和选自氧化铝，氧化铪，氧化钪，氧化钕，氧化铌，氧化钐，氧化镱，氧化铒，氧化铈及其组合中的至少一种其它组分，摩尔浓度范围为 约10摩尔％至约30摩尔％。

公开(公告)号：US20080029211A1

公开(公告)日：2008-02-07

申请号：US11461689

申请日：2006-08-01

申请人： JENNIFER Y. SUN ,  Li Xu ,  Senh Thach ,  Kelly A. McDonough ,  Robert Scott Clark

发明人： JENNIFER Y. SUN ,  Li Xu ,  Senh Thach ,  Kelly A. McDonough ,  Robert Scott Clark

IPC分类号： B32B37/00

CPC分类号： C23C16/4409 ,  H01J37/32467

摘要： Embodiments of the invention provide a robust bonding material suitable for joining semiconductor processing chamber components. Other embodiments provide semiconductor processing chamber components joined using a bonding material having metal filler disposed in an adhesive layer. Other embodiments include methods for manufacturing a semiconductor processing chamber component having a bonding material that includes metal filled disposed in an adhesive layer. The metal filler is suitable for reacting with halogen containing plasmas such that a halogen based metal layer is formed on the exposed portion of the bonding material upon exposure to the plasma.

摘要翻译： 本发明的实施例提供了适用于接合半导体处理室部件的坚固的接合材料。 其他实施例提供使用布置在粘合剂层中的具有金属填料的接合材料连接的半导体处理室部件。 其他实施例包括用于制造半导体处理室部件的方法，所述半导体处理室部件具有包括设置在粘合剂层中的填充金属的接合材料。 金属填料适于与含卤素的等离子体反应，使得在暴露于等离子体时在接合材料的暴露部分上形成卤素基金属层。

公开(公告)号：US20090087615A1

公开(公告)日：2009-04-02

申请号：US12290437

申请日：2008-10-29

申请人： Jennifer Y. Sun ,  Senh Thach ,  James Dempster ,  Li Xu ,  Thanh N. Pham

发明人： Jennifer Y. Sun ,  Senh Thach ,  James Dempster ,  Li Xu ,  Thanh N. Pham

IPC分类号： B32B3/24

CPC分类号： C23C16/45565 ,  C04B41/009 ,  C04B41/5353 ,  C04B41/91 ,  C23C16/4404 ,  C23C16/4407 ,  C30B35/00 ,  H01J37/3244 ,  H01J37/32467 ,  H01J37/32862 ,  Y10T428/24273 ,  Y10T428/24314 ,  C04B35/505

摘要： Disclosed herein is a gas distribution plate for use in a gas distribution assembly for a processing chamber, where the gas distribution plate is fabricated from a solid yttrium oxide-comprising substrate, which may also include aluminum oxide. The gas distribution plate includes a plurality of through-holes, which are typically crescent-shaped. Through-holes which have been formed in the solid yttrium oxide-comprising substrate by ultrasonic drilling perform particularly well. The solid yttrium oxide-comprising substrate typically comprises at least 99.9% yttrium oxide, and has a density of at least 4.92 g/cm3, a water absorbency of about 0.02% or less, and an average grain size within the range of about 10 μm to about 25 μm. Also disclosed herein are methods for fabricating and cleaning the yttrium oxide-comprising gas distribution plate.

摘要翻译： 本文公开了一种用于处理室的气体分配组件中的气体分配板，其中气体分配板由可能还包括氧化铝的固体含氧化钇衬底制成。 气体分配板包括通常为月牙形的多个通孔。 通过超声波钻孔在固体含氧化钇基质中形成的通孔特别好。 固体含氧化钇的衬底通常包含至少99.9％的氧化钇，并且具有至少4.92g / cm 3的密度，约0.02％或更低的吸水率，以及在约10μm范围内的平均晶粒尺寸 到大约25个妈妈。 本文还公开了用于制造和清洁含氧化钇气体分配板的方法。

公开(公告)号：US08231736B2

公开(公告)日：2012-07-31

申请号：US11845620

申请日：2007-08-27

申请人： Jennifer Y. Sun ,  Senh Thach ,  Xi Zhu ,  Li Xu ,  Anisul Khan

发明人： Jennifer Y. Sun ,  Senh Thach ,  Xi Zhu ,  Li Xu ,  Anisul Khan

IPC分类号： B08B3/00

CPC分类号： C23C16/4407 ,  C11D7/08 ,  C11D7/10 ,  C11D11/0047 ,  C11D11/0064

摘要： A cleaning process for recovering an anodized aluminum part is particularly useful when the part has been exposed to a fluorine-containing plasma in etch reactor. The part is bathed in an agitated solution of a fluoride acid, such as ammonium fluoride, which converts aluminum fluoride to a soluble fluoride. The part is rinsed in water. The pores of the cleaned anodization may be resealed by a submerging the part in hot agitated deionized water.

摘要翻译： 当在蚀刻反应器中暴露于含氟等离子体时，用于回收阳极氧化铝部件的清洁方法是特别有用的。 将该部分浸渍在氟化物酸如氟化铵的搅拌溶液中，其将氟化铝转化为可溶性氟化物。 该部件在水中冲洗。 清洁的阳极氧化的孔可以通过将部件浸没在热的搅拌去离子水中来重新密封。