公开(公告)号：US06387740B1

公开(公告)日：2002-05-14

申请号：US09627142

申请日：2000-07-24

Applicant: Tean-Sen Jen ,  Jia-Shyong Cheng

Inventor： Tean-Sen Jen ,  Jia-Shyong Cheng

IPC: H01L2100

CPC classification number: H01L27/1288 ,  G02F1/136227 ,  G02F2001/136231 ,  H01L27/1214

Abstract: A simplified tri-layer process for forming a thin film transistor matrix for a liquid crystal display is disclosed. By using a backside exposure technique, the masking step for patterning an etch stopper layer can be omitted. After forming an active region including a gate electrode and a scan line on the front side of a substrate, and sequentially applying an etch stopper layer and a photoresist layer over the resulting structure, the backside exposure is performed by exposing from the back side of the substrate. A portion of photoresist is shielded by the active region from exposure so that an etch stopper structure having a shape similar to the shape of the active region is formed without any photo-masking and lithographic procedure. Therefore, the above self-aligned effect allows one masking step to be reduced so as to simplify the process.

Abstract translation: 公开了用于形成用于液晶显示器的薄膜晶体管矩阵的简化三层工艺。 通过使用背面曝光技术，可以省略用于图案化蚀刻停止层的掩模步骤。 在衬底的前侧形成包括栅电极和扫描线的有源区，并在所得结构上依次施加蚀刻停止层和光致抗蚀剂层，通过从背面曝光 基质。 一部分光致抗蚀剂被有源区域遮蔽而不被曝光，从而形成具有类似于有源区形状的蚀刻停止结构，而没有任何光掩模和光刻工艺。 因此，上述自对准效果允许减少一个掩模步骤，从而简化处理。

公开(公告)号：US06337173B2

公开(公告)日：2002-01-08

申请号：US09208452

申请日：1998-12-10

Applicant: Tean-Sen Jen ,  Shiou-Yu Wang ,  Jia-Shyong Cheng

Inventor： Tean-Sen Jen ,  Shiou-Yu Wang ,  Jia-Shyong Cheng

IPC: G03F726

CPC classification number: H01L28/92 ,  H01L21/76213 ,  H01L27/10852

Abstract: A method for fabricating a capacitor electrode on a semiconductor substrate includes the steps of: forming a conducting layer over the semiconductor substrate; forming a photoresist layer over the conducting layer; pattering the photoresist layer through an interfering exposure step; and pattering the conducting layer using the patterned photoresist layer as a mask, thereby forming a capacitor electrode.

Abstract translation: 一种在半导体衬底上制造电容器电极的方法包括以下步骤：在半导体衬底上形成导电层; 在所述导电层上形成光致抗蚀剂层; 通过干涉曝光步骤图案化光致抗蚀剂层; 并使用图案化的光致抗蚀剂层作为掩模图案化导电层，从而形成电容器电极。

公开(公告)号：US5923989A

公开(公告)日：1999-07-13

申请号：US81598

申请日：1998-05-20

Applicant: Shian-Jyh Lin ,  Tsu-An Lin ,  Wen-Chieh Chang ,  Shiou-Yu Wang ,  Tean-Sen Jen ,  Hui-Jen Yang ,  Jia-Shyong Cheng ,  Ming-Teng Hsieh

Inventor： Shian-Jyh Lin ,  Tsu-An Lin ,  Wen-Chieh Chang ,  Shiou-Yu Wang ,  Tean-Sen Jen ,  Hui-Jen Yang ,  Jia-Shyong Cheng ,  Ming-Teng Hsieh

IPC: H01L21/02 ,  H01L21/8242

CPC classification number: H01L27/10852 ,  H01L28/84

Abstract: A method of fabricating a rugged capacitor structure of high density Dynamic Random Access Memory (DRAM) cells is disclosed. First, MOSFETs, wordlines and bitlines are formed on a semiconductor silicon substrate. Next, a dielectric layer and a doped polysilicon layer are sequentially deposited over the entire silicon substrate. The dielectric layer and doped polysilicon layer are then partially etched to open source contact windows. Then, a polysilicon layer is deposited overlaying the doped polysilicon layer and filling into the source contact windows. Next, the polysilicon layer and doped polysilicon layers are partially etched to define bottom electrodes of the capacitors. Next, tilt angle implantation is performed to implant impurities into top surface and four sidewalls of the polysilicon layer and doped polysilicon layer. Next, a rugged polysilicon layer is deposited overlaying the polysilicon, doped polysilicon and third dielectric layers. Next, the polysilicon layer is anisotropically etched by using the rugged polysilicon layer as an etching mask to transfer rugged surface profile from the rugged polysilicon layer to the polysilicon layer. Finally, an interelectrode dielectric layer and a third polysilicon layer as top electrodes of the capacitors are sequentially formed to complete the rugged capacitor for high density DRAM applications.

Abstract translation: 公开了一种制造高密度动态随机存取存储器（DRAM）单元的坚固电容器结构的方法。 首先，在半导体硅衬底上形成MOSFET，字线和位线。 接下来，在整个硅衬底上依次沉积介电层和掺杂多晶硅层。 然后将电介质层和掺杂多晶硅层部分地蚀刻到开源接触窗口。 然后，沉积覆盖掺杂多晶硅层并填充到源极接触窗口中的多晶硅层。 接下来，部分蚀刻多晶硅层和掺杂多晶硅层以限定电容器的底部电极。 接下来，进行倾斜角注入以将杂质植入多晶硅层的顶表面和四个侧壁以及掺杂多晶硅层。 接下来，沉积覆盖多晶硅，掺杂多晶硅和第三介电层的坚固的多晶硅层。 接下来，通过使用坚固的多晶硅层作为蚀刻掩模来将多晶硅层各向异性地蚀刻，以将粗糙的表面轮廓从坚固的多晶硅层转移到多晶硅层。 最后，依次形成作为电容器顶电极的电极间电介质层和第三多晶硅层，以完成用于高密度DRAM应用的坚固电容器。

公开(公告)号：US07423620B2

公开(公告)日：2008-09-09

申请号：US10964803

申请日：2004-10-13

Applicant: Tean-Sen Jen ,  Ming-Tien Lin ,  Deuk-Su Lee ,  Ta-Wei Tseng

Inventor： Tean-Sen Jen ,  Ming-Tien Lin ,  Deuk-Su Lee ,  Ta-Wei Tseng

IPC: G09G3/36 ,  G02F1/1343

CPC classification number: G02F1/136213 ,  G09G3/3648 ,  G09G2310/0232 ,  G09G2320/0223 ,  G09G2320/0247

Abstract: The screen of a liquid crystal display is first divided into a compensation portion, a compensation transition portion and a non-compensation portion in a sequence arranged along the scanning line. Then storage capacitor areas of the pixels in the non-compensation portion are made equal, whereas the difference between the storage capacitor area of the pixel in the compensation portion and that in the non-compensation portion is set to one constant basic compensation area. Afterward, the average of the storage capacitor areas of the pixels on each data line in the compensation transition portion progressively varies along the scanning line, where the average is greater than or equal to any of the storage capacitor areas of the pixels in the non-compensation portion. The direction of the scanning line is designated as either the direction in which scanning signals are transmitted or the direction opposite thereto.

Abstract translation: 液晶显示器的屏幕首先按沿扫描线排列的顺序分为补偿部分，补偿过渡部分和非补偿部分。 然后使非补偿部分中的像素的存储电容器区域相等，而补偿部分中的像素的存储电容器面积与非补偿部分中的像素的存储电容器面积之间的差被设置为一个恒定的基本补偿区域。 之后，补偿过渡部分中的每个数据线上的像素的存储电容器区域的平均值沿着扫描线逐渐变化，其中平均值大于或等于非易失性存储器中的像素的任何存储电容器区域， 补偿部分。 扫描线的方向被指定为扫描信号传输的方向或与其相反的方向。

公开(公告)号：US07271871B2

公开(公告)日：2007-09-18

申请号：US10848243

申请日：2004-05-17

Applicant: Tean-Sen Jen ,  Peter Liao ,  Ming-Tien Lin

Inventor： Tean-Sen Jen ,  Peter Liao ,  Ming-Tien Lin

IPC: G02F1/1345

CPC classification number: G09G3/3611 ,  G02F1/1345 ,  G09G2300/0426 ,  G09G2320/0223

Abstract: A liquid crystal display panel with reduced flicker comprises an active matrix substrate equipped with a plurality of thin film transistors. The active matrix substrate has an active area that is formed with a plurality of first signal lines and a plurality of second signal lines crossing each other. The active area includes a plurality of pixels arranged in a matrix. There are outer-lead bonding areas around the active area. There are a plurality of pad areas within the outer-lead bonding areas. A plurality of second wires arranged in a fan-out configuration extend from the pad areas and stretch toward the active area. The second wires are connected to their respective first signal lines by their serpentine or zigzag routes resulting in various wire lengths. A frame-like lead overlaps the second wires, and a capacitor exists between each of the second wires and the closed frame-like lead. The induced capacitor and the resistance of the corresponding second wire together result in a compensation effect so as to uniform the time constants of the plurality of first signal lines.

Abstract translation: 具有减少的闪烁的液晶显示面板包括配备有多个薄膜晶体管的有源矩阵基板。 有源矩阵基板具有形成有多个第一信号线和彼此交叉的多个第二信号线的有源区域。 有源区域包括以矩阵形式布置的多个像素。 有源区域周围有外引线接合区域。 在外引线接合区域内有多个焊盘区域。 以扇出配置布置的多个第二布线从焊盘区域延伸并朝向有效区域拉伸。 第二根线通过其蛇形或锯齿形路线连接到它们各自的第一信号线，导致各种线长度。 框架状引线与第二导线重叠，并且在每个第二导线和封闭的框架状引线之间存在电容器。 感应电容器和对应的第二导线的电阻在一起导致补偿效应，以使多个第一信号线的时间常数均匀。

公开(公告)号：US07148940B2

公开(公告)日：2006-12-12

申请号：US10885435

申请日：2004-07-06

Applicant: Seok-Lyul Lee ,  Tean-Sen Jen ,  Ming-Tien Lin

Inventor： Seok-Lyul Lee ,  Tean-Sen Jen ,  Ming-Tien Lin

IPC: G02F1/1335

CPC classification number: G02F1/133553 ,  G02F2001/133342

Abstract: A reflective liquid crystal display panel for dual display. The panel has a plurality of pixels and each pixel having first and second display regions. Each pixel includes a first substrate and a second substrate opposite thereto, wherein the first substrate includes a pixel driving device. A first reflective layer is formed overlying the first substrate in the first display region. A second reflective layer is formed overlying an interior of the second substrate in the second display region. A liquid crystal layer is interposed between the first substrate and the second substrate.

Abstract translation: 一种用于双显示的反射式液晶显示面板。 面板具有多个像素，每个像素具有第一和第二显示区域。 每个像素包括第一衬底和与之相对的第二衬底，其中第一衬底包括像素驱动装置。 在第一显示区域中形成覆盖第一基板的第一反射层。 第二反射层形成在第二显示区域中覆盖第二基板的内部。 液晶层介于第一基板和第二基板之间。

公开(公告)号：US20050110915A1

公开(公告)日：2005-05-26

申请号：US10971620

申请日：2004-10-21

Applicant: Seok-Lyul Lee ,  Tean-Sen Jen ,  Ming-Tien Lin

Inventor： Seok-Lyul Lee ,  Tean-Sen Jen ,  Ming-Tien Lin

IPC: G02F1/1343 ,  G02F1/1362 ,  G02F1/136

CPC classification number: G02F1/134363 ,  G02F1/136259 ,  G02F2001/136268

Abstract: A pixel structure and repair method thereof. A through hole is formed in the common line. When the source/drain electrode of a thin film transistor is not electrically connected to a pixel electrode due to a polymer residue remaining in a contact hole, a first laser beam passes through the through hole to weld the source/drain electrode and the pixel electrode. The defective pixel can be thus repaired to display the original color. In addition, if the defective pixel fails due to a defective thin film transistor, the invention irradiates a second laser beam to sever the source/drain electrode such that the defective thin film transistor is not electrically connected to the pixel electrode. The defective pixel can be thus repaired to a dark point.

Abstract translation: 像素结构及其修复方法。 公共线中形成有通孔。 当由于残留在接触孔中的聚合物残留物而使薄膜晶体管的源极/漏极电极没有电连接到像素电极时，第一激光束通过通孔来焊接源/漏电极和像素电极 。 因此可以修复缺陷像素以显示原始颜色。 此外，如果缺陷像素由于薄膜晶体管缺陷而失效，则本发明照射第二激光束来切断源/漏电极，使得有缺陷的薄膜晶体管不与像素电极电连接。 因此，有缺陷的像素可以被修复到暗点。

公开(公告)号：US06580093B2

公开(公告)日：2003-06-17

申请号：US09990994

申请日：2001-11-13

Applicant: Te-Cheng Chung ,  Tean-Sen Jen ,  Deuk-Su Lee

Inventor： Te-Cheng Chung ,  Tean-Sen Jen ,  Deuk-Su Lee

IPC: H01L2904

CPC classification number: H01L27/12

Abstract: A structure of the TFT array includes an additional row of pixel electrode coupled to the last scanning line for the last pixel electrode row. The last pixel electrode row has overlap with the last scanning line to form the equivalent storage capacitor. In addition, the liquid crystal exists on a portion of the pixel electrode row without overlapping with the last scanning line, resulting in the liquid crystal capacitor, which equivalent to the liquid crystal capacitor for the other scanning lines. The pixel electrode row can compensate the miss capacitance from the storage capacitor and the liquid crystal capacitor for the last scanning line. As a result, the difference of capacitive effect for the edge scanning line and the other scanning lines can be balanced, so as to improve the displaying quality.

Abstract translation: TFT阵列的结构包括连接到最后一个像素电极列的最后扫描线的附加行像素电极。 最后一个像素电极行与最后一条扫描线重叠以形成等效存储电容。 此外，液晶存在于像素电极列的一部分而不与最后的扫描线重叠，产生与其他扫描线的液晶电容相当的液晶电容器。 像素电极列可以补偿来自存储电容器和最后一条扫描线的液晶电容器的漏电容。 结果，可以平衡边缘扫描线和其他扫描线的电容效应的差异，从而提高显示质量。

公开(公告)号：US06376288B1

公开(公告)日：2002-04-23

申请号：US09862546

申请日：2001-05-22

Applicant: Tean-Sen Jen ,  Te-Cheng Chung ,  Ming-Tien Lin

Inventor： Tean-Sen Jen ,  Te-Cheng Chung ,  Ming-Tien Lin

IPC: H01L2184

CPC classification number: H01L27/1288 ,  G02F1/136227 ,  H01L27/1214 ,  H01L29/66765

Abstract: A method of forming a TFT structure is performed on a glass substrate. A first metal layer deposited on the glass substrate is patterned with a first mask to form a gate line and a gate electrode. Next, a gate insulating layer, a first semiconductor layer and an etch-stop layer are successively formed, and backside exposure patterns the etch-stop layer. Thus, the remaining part of the etch-stop layer is disposed over the gate electrode and the gate line. Next, a second semiconductor layer and a second metal layer are successively formed, and then the second metal layer is patterned with a second mask to form a data line perpendicular to the gate line. Thereafter, the second semiconductor layer and the first semiconductor layer not covered by the second metal layer are removed. Next, a first protection layer formed on the exposed surface of the glass substrate is patterned with a third mask to form a first opening and a second opening, wherein the first opening is over the gate electrode and the second opening is over a predetermined drain electrode. Next, a conductive layer and a photoresist layer successively formed on the exposed surface of the glass substrate are patterned with a fourth mask to form a pattern of a predetermined pixel electrode. Finally, after removing the second metal layer and the second semiconductor layer underlying the first opening to expose the etch-stop layer, a second protection layer is formed on the first protection layer to fill the first opening.

Abstract translation: 在玻璃基板上进行TFT结构的形成方法。 沉积在玻璃基板上的第一金属层用第一掩模图案化以形成栅极线和栅电极。 接下来，连续地形成栅极绝缘层，第一半导体层和蚀刻停止层，并且背面曝光对蚀刻停止层进行图案化。 因此，蚀刻停止层的剩余部分设置在栅电极和栅极线之上。 接下来，依次形成第二半导体层和第二金属层，然后用第二掩模对第二金属层进行构图，以形成垂直于栅极线的数据线。 此后，除去未被第二金属层覆盖的第二半导体层和第一半导体层。 接下来，用第三掩模对形成在玻璃基板的暴露表面上的第一保护层进行图案化，以形成第一开口和第二开口，其中第一开口在栅电极之上，第二开口在预定的漏极上 。 接下来，用第四掩模对连续形成在玻璃基板的暴露表面上的导电层和光致抗蚀剂层进行图案化以形成预定像素电极的图案。 最后，在去除第一开口下面的第二金属层和第二半导体层以露出蚀刻停止层之前，在第一保护层上形成第二保护层以填充第一开口。

公开(公告)号：US08203513B2

公开(公告)日：2012-06-19

申请号：US12334524

申请日：2008-12-15

Applicant: Te-Chen Chung ,  Tean-Sen Jen ,  Chia-Te Liao ,  Lian-Bo Mao ,  Junrui Zhang

Inventor： Te-Chen Chung ,  Tean-Sen Jen ,  Chia-Te Liao ,  Lian-Bo Mao ,  Junrui Zhang

IPC: G09G3/36

CPC classification number: G02F1/136213 ,  G02F2001/134345 ,  G09G3/3614 ,  G09G3/3659 ,  G09G2300/0876 ,  G09G2320/0242

Abstract: A low color shift liquid crystal display and a driving method thereof are provided. The liquid crystal display comprises a plurality of data lines; a plurality of scanning lines arranged across the plurality of data lines, two adjacent scanning lines and two adjacent data lines arranged across the two adjacent scanning lines together defining a pixel region; and a plurality of pixels each comprising a first and a second sub-pixels. The first sub-pixel is connected to a first scanning line of the two adjacent scanning lines, the second sub-pixel includes a compensation capacitor, which is coupled to a second scanning line of the two adjacent scanning lines. Thereby a voltage difference can be maintained between the two sub-pixels under the same driving condition, and the voltage difference can be easily adjusted by suitably changing the waveforms of scanning drive signals on the scanning lines.

Abstract translation: 提供了低色移液晶显示器及其驱动方法。 液晶显示器包括多条数据线; 布置在多条数据线上的多条扫描线，两条相邻的扫描线和两条相邻的两条相邻数据线，两条相邻的扫描线一起限定一个像素区域; 以及每个包括第一和第二子像素的多个像素。 第一子像素连接到两个相邻扫描线的第一扫描线，第二子像素包括补偿电容器，其被耦合到两个相邻扫描线的第二扫描线。 由此，可以在相同驱动条件下在两个子像素之间保持电压差，并且可以通过适当地改变扫描线上的扫描驱动信号的波形来容易地调节电压差。