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公开(公告)号：US20120146184A1
公开(公告)日：2012-06-14
申请号：US13383981
申请日：2009-08-28
申请人： Matthew Pickett , Julien Borghetti , Jianhua Yang
发明人： Matthew Pickett , Julien Borghetti , Jianhua Yang
CPC分类号： G11C11/24 , H01G7/06 , H01L27/101 , H01L28/40 , H01L29/167 , H01L29/93
摘要： A memcapacitor device includes a memcapacitive matrix interposed between a first electrode and a second electrode. The memcapacitive matrix includes deep level dopants having a first decay time constant and shallow level dopants having a second decay time constant. The second decay time constant is substantially shorter than the first decay time constant. The capacitance of the memcapacitor device depends upon an initial voltage applied across the memcapacitive matrix and a time dependent change in capacitance of the memcapacitor device depends upon the first decay time constant. A method for forming a memcapacitive device is also provided.
摘要翻译： 电容器装置包括插入在第一电极和第二电极之间的存储电容矩阵。 电容矩阵包括具有第一衰减时间常数的深层掺杂剂和具有第二衰减时间常数的浅层掺杂剂。 第二衰减时间常数明显短于第一衰减时间常数。 存储器件器件的电容取决于施加在存储电容矩阵上的初始电压，并且存储器件器件的时间相关的电容变化取决于第一衰减时间常数。 还提供了一种用于形成电容器件的方法。
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公开(公告)号：US20110121359A1
公开(公告)日：2011-05-26
申请号：US13056101
申请日：2008-07-31
CPC分类号： H01L29/861 , H01L27/101 , H01L27/1021 , H01L29/8615 , H01L29/8616 , H01L29/872 , H01L45/08 , H01L45/1233 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147
摘要： Embodiments of the present invention are directed to reconfigurable two-terminal electronic switch devices (100) comprising a compound (102) sandwiched between two electrodes (104,106). These devices are configured so that the two electrode/compound interface regions can be either rectifying or conductive, depending on the concentration of dopants at the respective interface, which provides four different device operating characteristics. By forcing charged dopants into or out of the interface regions with an applied electric field pulse, a circuit element can be switched from one type of stable operation to another in at least three different ways. A family of devices built to express these properties display behaviors that provide new opportunities for nanoscale electronic devices.
摘要翻译： 本发明的实施例涉及包括夹在两个电极（104,106）之间的化合物（102）的可重新配置的两端子电子开关装置（100）。 这些器件被配置为使得两个电极/复合界面区域可以是整流或导电，这取决于各个界面处的掺杂剂的浓度，其提供四种不同的器件工作特性。 通过用施加的电场脉冲将带电荷的掺杂剂强制进出界面区域，电路元件可以以至少三种不同的方式从一种类型的稳定操作切换到另一种。 一系列用于表现这些属性的设备显示出为纳米级电子设备提供新机会的行为。
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公开(公告)号：US08586959B2
公开(公告)日：2013-11-19
申请号：US12769557
申请日：2010-04-28
申请人： Matthew D. Pickett , Jianhua Yang , Dmitri Strukov
发明人： Matthew D. Pickett , Jianhua Yang , Dmitri Strukov
IPC分类号： H01L47/00
CPC分类号： H01L45/146 , G11C13/0007 , G11C13/003 , G11C2213/56 , G11C2213/72 , G11C2213/77 , H01L27/2409
摘要： A memristive switch device can comprise a switch formed between a first electrode and a second electrode, where the switch includes a memristive layer and a select layer directly adjacent the memristive layer. The select layer blocks current to the memristive layer over a symmetric bipolar range of subthreshold voltages applied between the first and second electrodes.
摘要翻译： 忆阻开关装置可以包括形成在第一电极和第二电极之间的开关，其中开关包括忆阻层和与忆阻层直接相邻的选择层。 选择层通过施加在第一和第二电极之间的亚阈值电压的对称双极性范围阻挡电流到忆阻层。
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公开(公告)号：US08264868B2
公开(公告)日：2012-09-11
申请号：US12911283
申请日：2010-10-25
IPC分类号： G11C11/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/0073 , G11C2213/76 , H01L27/2463 , H01L45/12 , H01L45/1233
摘要： A memory array with Metal-Insulator Transition (MIT) switching devices includes a set of row lines intersecting a set of column lines and a memory element disposed at an intersection between one of the row lines and one of the column lines. The memory element includes a switching layer in series with an MIT material. A method of accessing a target memory element within a memory array includes applying half of an access voltage to a row line connected to the target memory element, the target memory element comprising a switching layer in series with an MIT material, and applying an inverted half of the access voltage to a column line connected to the target memory element.
摘要翻译： 具有金属绝缘体转变（MIT）切换装置的存储器阵列包括与一组列线相交的一行行线和设置在一行行列与一列列线之间的交叉处的存储元件。 存储元件包括与MIT材料串联的开关层。 一种访问存储器阵列内的目标存储器元件的方法包括将一半存取电压施加到连接到目标存储器元件的行线，该目标存储器元件包括与MIT材料串联的开关层，并施加倒置的一半 对连接到目标存储元件的列线的存取电压。
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15.发明授权公开(公告)号：US09184382B2
公开(公告)日：2015-11-10
申请号：US12914935
申请日：2010-10-28
CPC分类号： H01L27/2463 , H01L45/06 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1616
摘要： Memristor systems and method for fabricating memristor system are disclosed. In one aspect, a memristor includes a first electrode, a second electrode, and a junction disposed between the first electrode and the second electrode. The junction includes at least one layer such that each layer has a plurality of dopant sub-layers disposed between insulating sub-layers. The sub-layers are oriented substantially parallel to the first and second electrodes.
摘要翻译： 记忆体系统和制造忆阻器系统的方法被公开。 一方面，忆阻器包括第一电极，第二电极和设置在第一电极和第二电极之间的结。 该结包括至少一个层，使得每个层具有设置在绝缘子层之间的多个掺杂剂子层。 子层的取向基本上平行于第一和第二电极。
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公开(公告)号：US20130026434A1
公开(公告)日：2013-01-31
申请号：US13383634
申请日：2010-01-29
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , H01L27/2472 , H01L45/04 , H01L45/1253
摘要： A memristor with a controlled electrode grain size includes an adhesion layer, a first electrode having a first surface contacting the adhesion layer and a second surface opposite the first surface, in which the first electrode is formed of an alloy of a base material and at least one second material, and in which the alloy has a relatively smaller grain size than a grain size of the base material. The memristor also includes a switching layer positioned adjacent to the second surface of the first electrode and a second electrode positioned adjacent to the switching layer.
摘要翻译： 具有受控电极晶粒尺寸的忆阻器包括粘合层，具有接触粘附层的第一表面的第一电极和与第一表面相对的第二表面，其中第一电极由基材的合金和至少 一种第二材料，并且其中合金具有比基材的晶粒尺寸更小的晶粒尺寸。 忆阻器还包括邻近第一电极的第二表面定位的开关层和邻近开关层定位的第二电极。
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公开(公告)号：US20130023106A1
公开(公告)日：2013-01-24
申请号：US13384000
申请日：2010-03-12
CPC分类号： H01L27/0688 , G11C13/0002 , G11C13/0007 , G11C2213/71 , H01L27/101
摘要： A device (10) may include a semiconductor layer section (25) and a memory layer section (45) disposed above the semiconductor layer section (25). The semiconductor layer section (25) may include a processor (12; 412) and input/output block (16; 416), and the memory layer section (45) may include memristive memory (14; 300). A method of forming such device (10), and an apparatus (600) including such device (10) are also disclosed. Other embodiments are described and claimed.
摘要翻译： 器件（10）可以包括设置在半导体层部分（25）上方的半导体层部分（25）和存储层部分（45）。 半导体层部分（25）可以包括处理器（12; 412）和输入/输出块（16; 416），并且存储器层部分（45）可以包括忆阻存储器（14; 300）。 还公开了形成这种装置（10）的方法，以及包括这种装置（10）的装置（600）。 描述和要求保护其他实施例。
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公开(公告)号：US08525553B1
公开(公告)日：2013-09-03
申请号：US13459877
申请日：2012-04-30
申请人： Wei Yi , Jianhua Yang , Matthew D. Pickett , Minxian Max Zhang
发明人： Wei Yi , Jianhua Yang , Matthew D. Pickett , Minxian Max Zhang
IPC分类号： H03K19/02
CPC分类号： H03K3/313 , H01L27/0802 , H03K19/10
摘要： In one example, an oxide-based negative differential resistance comparator circuit includes a composite NDR device that includes a first electrode, a first thin film oxide-based negative differential resistance (NDR) layer in contact with the first electrode and a central conductive portion. The composite NDR device also includes a second thin film oxide-based NDR layer disposed adjacent to the first NDR layer and a second electrode. A resistor may be placed in series with the composite NDR device and an electrical energy source can apply applying a voltage across the first electrode and second electrode. The composite NDR device produces a threshold based comparator functionality in the comparator circuit.
摘要翻译： 在一个示例中，基于氧化物的负差分电阻比较器电路包括复合NDR器件，其包括第一电极，与第一电极接触的第一基于薄膜氧化物的负差分电阻（NDR）层和中心导电部分。 复合NDR器件还包括邻近第一NDR层设置的第二薄膜氧化物基NDR层和第二电极。 电阻器可以与复合NDR器件串联放置，并且电能源可施加跨越第一电极和第二电极的电压。 复合NDR器件在比较器电路中产生基于阈值的比较器功能。
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公开(公告)号：US20150053909A1
公开(公告)日：2015-02-26
申请号：US14385259
申请日：2012-04-25
CPC分类号： H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/147 , H01L45/1608
摘要： A nonlinear memristor includes a bottom electrode, a top electrode, and an insulator layer between the bottom electrode and the top electrode. The insulator layer comprises a metal oxide. The nonlinear memristor further includes a switching channel within the insulator layer, extending from the bottom electrode toward the top electrode, and a nano-cap layer of a metal-insulator-transition material between the switching channel and the top electrode. The top electrode comprises the same metal as the metal in the metal-insulator-transition material.
摘要翻译： 非线性忆阻器包括在底部电极和顶部电极之间的底部电极，顶部电极和绝缘体层。 绝缘体层包括金属氧化物。 所述非线性忆阻器还包括在所述绝缘体层内从所述底部电极朝向所述顶部电极延伸的开关通道，以及在所述开关沟道和所述顶部电极之间的金属 - 绝缘体 - 过渡材料的纳米帽层。 顶部电极包括与金属 - 绝缘体 - 过渡材料中的金属相同的金属。
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公开(公告)号：US08525146B2
公开(公告)日：2013-09-03
申请号：US12961214
申请日：2010-12-06
IPC分类号： H01L47/00 , H01L21/326 , H01L21/479
CPC分类号： H01L45/04 , H01L27/2472 , H01L45/1206 , H01L45/1226 , H01L45/146
摘要： An electrical circuit component includes a first electrode, a plurality of second electrodes and a negative differential resistance (NDR) material. The first electrode and the plurality of second electrodes are connected to the NDR material and the NDR material is to electrically connect the first electrode to one of the plurality of second electrodes when a sufficient voltage is applied between the first electrode and the one of the plurality of second electrodes through the NDR material.
摘要翻译： 电路部件包括第一电极，多个第二电极和负的差分电阻（NDR）材料。 第一电极和多个第二电极连接到NDR材料，并且当在第一电极和多个第二电极之间施加足够的电压时，NDR材料将第一电极电连接到多个第二电极中的一个 的第二电极通过NDR材料。
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