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公开(公告)号：US20110121359A1
公开(公告)日：2011-05-26
申请号：US13056101
申请日：2008-07-31
CPC分类号： H01L29/861 , H01L27/101 , H01L27/1021 , H01L29/8615 , H01L29/8616 , H01L29/872 , H01L45/08 , H01L45/1233 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147
摘要： Embodiments of the present invention are directed to reconfigurable two-terminal electronic switch devices (100) comprising a compound (102) sandwiched between two electrodes (104,106). These devices are configured so that the two electrode/compound interface regions can be either rectifying or conductive, depending on the concentration of dopants at the respective interface, which provides four different device operating characteristics. By forcing charged dopants into or out of the interface regions with an applied electric field pulse, a circuit element can be switched from one type of stable operation to another in at least three different ways. A family of devices built to express these properties display behaviors that provide new opportunities for nanoscale electronic devices.
摘要翻译： 本发明的实施例涉及包括夹在两个电极（104,106）之间的化合物（102）的可重新配置的两端子电子开关装置（100）。 这些器件被配置为使得两个电极/复合界面区域可以是整流或导电，这取决于各个界面处的掺杂剂的浓度，其提供四种不同的器件工作特性。 通过用施加的电场脉冲将带电荷的掺杂剂强制进出界面区域，电路元件可以以至少三种不同的方式从一种类型的稳定操作切换到另一种。 一系列用于表现这些属性的设备显示出为纳米级电子设备提供新机会的行为。
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公开(公告)号：US08450711B2
公开(公告)日：2013-05-28
申请号：US13142582
申请日：2009-01-26
IPC分类号： H01L29/02
CPC分类号： G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/51 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , G11C2213/74 , H01L27/2463 , H01L29/8615 , H01L45/08 , H01L45/1233 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/148
摘要： Various embodiments of the present invention are directed to electronic devices, which combine reconfigurable diode rectifying states with nonvolatile memristive switching. In one aspect, an electronic device (210,230,240) comprises an active region (212) sandwiched between a first electrode (104) and a second electrode (106). The active region includes two or more semiconductor layers and at least one dopant that is capable of being selectively positioned within the active region to control the flow of charge carriers through the device.
摘要翻译： 本发明的各种实施例涉及将可重构二极管整流状态与非易失性忆阻转换组合的电子器件。 一方面，电子设备（210,230,240）包括夹在第一电极（104）和第二电极（106）之间的有源区（212）。 有源区域包括两个或更多个半导体层和至少一个能够选择性地定位在有源区域内以控制电荷载流子通过该器件的流动的掺杂剂。
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公开(公告)号：US20110266513A1
公开(公告)日：2011-11-03
申请号：US13142582
申请日：2009-01-26
IPC分类号： H01L45/00
CPC分类号： G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/51 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , G11C2213/74 , H01L27/2463 , H01L29/8615 , H01L45/08 , H01L45/1233 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/148
摘要： Various embodiments of the present invention are directed to electronic devices, which combine reconfigurable diode rectifying states with nonvolatile memristive switching. In one aspect, an electronic device (210,230,240) comprises an active region (212) sandwiched between a first electrode (104) and a second electrode (106). The active region includes two or more semiconductor layers and at least one dopant that is capable of being selectively positioned within the active region to control the flow of charge carriers through the device.
摘要翻译： 本发明的各种实施例涉及将可重构二极管整流状态与非易失性忆阻转换组合的电子器件。 一方面，电子设备（210,230,240）包括夹在第一电极（104）和第二电极（106）之间的有源区（212）。 有源区域包括两个或更多个半导体层和至少一个能够选择性地定位在有源区域内以控制电荷载流子通过该器件的流动的掺杂剂。
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公开(公告)号：US20120146184A1
公开(公告)日：2012-06-14
申请号：US13383981
申请日：2009-08-28
申请人： Matthew Pickett , Julien Borghetti , Jianhua Yang
发明人： Matthew Pickett , Julien Borghetti , Jianhua Yang
CPC分类号： G11C11/24 , H01G7/06 , H01L27/101 , H01L28/40 , H01L29/167 , H01L29/93
摘要： A memcapacitor device includes a memcapacitive matrix interposed between a first electrode and a second electrode. The memcapacitive matrix includes deep level dopants having a first decay time constant and shallow level dopants having a second decay time constant. The second decay time constant is substantially shorter than the first decay time constant. The capacitance of the memcapacitor device depends upon an initial voltage applied across the memcapacitive matrix and a time dependent change in capacitance of the memcapacitor device depends upon the first decay time constant. A method for forming a memcapacitive device is also provided.
摘要翻译： 电容器装置包括插入在第一电极和第二电极之间的存储电容矩阵。 电容矩阵包括具有第一衰减时间常数的深层掺杂剂和具有第二衰减时间常数的浅层掺杂剂。 第二衰减时间常数明显短于第一衰减时间常数。 存储器件器件的电容取决于施加在存储电容矩阵上的初始电压，并且存储器件器件的时间相关的电容变化取决于第一衰减时间常数。 还提供了一种用于形成电容器件的方法。
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公开(公告)号：US20120249252A1
公开(公告)日：2012-10-04
申请号：US13078595
申请日：2011-04-01
申请人： Julien Borghetti , Matthew D. Pickett , Gilberto Medelros Ribeiro , Wei Yi , Jianhua Yang , Minxian Max Zhang
发明人： Julien Borghetti , Matthew D. Pickett , Gilberto Medelros Ribeiro , Wei Yi , Jianhua Yang , Minxian Max Zhang
IPC分类号： H03B7/00
CPC分类号： H03B7/00
摘要： Circuitry is provided that closely emulates biological neural responses. Two astable multivibrator circuits (AMCs), each including a negative differential resistance device, are coupled in series-circuit relationship. Each AMC is characterized by a distinct voltage-dependant time constant. The circuitry exhibits oscillations in electrical current when subjected to a voltage equal to or greater than a threshold value. Various oscillating waveforms can be produced in accordance with voltages applied to the circuitry.
摘要翻译： 提供了密切仿效生物神经反应的电路。 两个不连续的多谐振荡器电路（AMC），每个包括一个负差分电阻器件，以串联电路的关系耦合。 每个AMC的特征在于不同的电压相关时间常数。 当经受等于或大于阈值的电压时，该电路表现出电流的振荡。 可以根据施加到电路的电压来产生各种振荡波形。
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6.发明授权Switchable junction with an intrinsic diode formed with a voltage dependent resistor 有权具有与电压相关电阻器形成的本征二极管的可切换结公开(公告)号：US08982601B2
公开(公告)日：2015-03-17
申请号：US13259183
申请日：2009-09-04
IPC分类号： G11C13/02 , H01L45/00 , H01L27/102 , G11C13/00 , H01L27/24 , H01L29/861 , H01L29/872
CPC分类号： H01L27/1021 , G11C13/0007 , G11C2213/12 , G11C2213/32 , G11C2213/34 , G11C2213/72 , G11C2213/73 , H01L27/24 , H01L27/2409 , H01L27/2463 , H01L29/8615 , H01L29/872 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： A switchable junction (600) having an intrinsic diode (634) formed with a voltage dependent resistor (640) is disclosed. The switchable junction comprises a first electrode (618), a second electrode (622), and a memristive matrix (620) configured to form an electrical interface (626) with the first electrode (618). The electrical interface has a programmable conductance. The voltage dependent resistor (640) is in electrical contact with the memristive matrix (620). The voltage dependent resistor is configured to form a rectifying diode interface (628) with the second electrode (622).
摘要翻译： 公开了具有形成有电压依赖电阻器（640）的本征二极管（634）的可切换接点（600）。 可切换接头包括第一电极（618），第二电极（622）和配置成与第一电极（618）形成电接口（626）的忆阻矩阵（620）。 电气接口具有可编程电导。 电压相关电阻器（640）与忆阻矩阵（620）电接触。 电压相关电阻器被配置为与第二电极（622）形成整流二极管接口（628）。
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公开(公告)号：US08779848B2
公开(公告)日：2014-07-15
申请号：US13383981
申请日：2009-08-28
IPC分类号： G11C11/00 , G11C11/24 , H01L29/167 , H01L49/02
CPC分类号： G11C11/24 , H01G7/06 , H01L27/101 , H01L28/40 , H01L29/167 , H01L29/93
摘要： A memcapacitor device includes a memcapacitive matrix interposed between a first electrode and a second electrode. The memcapacitive matrix includes deep level dopants having a first decay time constant and shallow level dopants having a second decay time constant. The second decay time constant is substantially shorter than the first decay time constant. The capacitance of the memcapacitor device depends upon an initial voltage applied across the memcapacitive matrix and a time dependent change in capacitance of the memcapacitor device depends upon the first decay time constant. A method for forming a memcapacitive device is also provided.
摘要翻译： 电容器装置包括插入在第一电极和第二电极之间的存储电容矩阵。 电容矩阵包括具有第一衰减时间常数的深层掺杂剂和具有第二衰减时间常数的浅层掺杂剂。 第二衰减时间常数明显短于第一衰减时间常数。 存储器件器件的电容取决于施加在存储电容矩阵上的初始电压，并且存储器件器件的时间相关的电容变化取决于第一衰减时间常数。 还提供了一种用于形成电容器件的方法。
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公开(公告)号：US08324976B2
公开(公告)日：2012-12-04
申请号：US13078595
申请日：2011-04-01
申请人： Julien Borghetti , Matthew D Pickett , Gilberto Medeiros Ribeiro , Wei Yi , Jianhua Yang , Minxian Max Zhang
发明人： Julien Borghetti , Matthew D Pickett , Gilberto Medeiros Ribeiro , Wei Yi , Jianhua Yang , Minxian Max Zhang
IPC分类号： H03B7/00
CPC分类号： H03B7/00
摘要： Circuitry is provided that closely emulates biological neural responses. Two astable multivibrator circuits (AMCs), each including a negative differential resistance device, are coupled in series-circuit relationship. Each AMC is characterized by a distinct voltage-dependant time constant. The circuitry exhibits oscillations in electrical current when subjected to a voltage equal to or greater than a threshold value. Various oscillating waveforms can be produced in accordance with voltages applied to the circuitry.
摘要翻译： 提供了密切仿效生物神经反应的电路。 两个不连续的多谐振荡器电路（AMC），每个包括一个负差分电阻器件，以串联电路的关系耦合。 每个AMC的特征在于不同的电压相关时间常数。 当经受等于或大于阈值的电压时，该电路表现出电流的振荡。 可以根据施加到电路的电压来产生各种振荡波形。
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公开(公告)号：US20120127780A1
公开(公告)日：2012-05-24
申请号：US13387307
申请日：2010-02-09
IPC分类号： G11C11/00
CPC分类号： G11C11/5678 , G11C11/54 , G11C13/0007 , G11C13/0069 , G11C2013/0092
摘要： Apparatus and methods related to memory resistors are provided. A feedback controller applies adjustment signals to a memristor. A non-volatile electrical resistance of the memristor is sensed by the feedback controller during the adjustment. The memristor is adjusted to particular values lying between first and second limiting values with minimal overshoot. Increased memristor service life, faster operation, lower power consumption, and higher operational integrity are achieved by the present teachings.
摘要翻译： 提供了与存储电阻相关的装置和方法。 反馈控制器将调整信号应用于忆阻器。 在调节期间，反馈控制器感测到避震器的非易失性电阻。 忆阻器被调整到具有最小过冲的第一和第二极限值之间的特定值。 通过本发明实现了增加的忆阻器使用寿命，更快的操作，更低的功耗和更高的操作完整性。
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公开(公告)号：US20110260134A1
公开(公告)日：2011-10-27
申请号：US13130837
申请日：2009-07-30
IPC分类号： H01L45/00
CPC分类号： G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/51 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , G11C2213/74 , H01L27/2463 , H01L29/8615 , H01L45/08 , H01L45/1206 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： A nanoscale switching device provides enhanced thermal stability and endurance to switching cycles. The switching device has an active region disposed between electrodes and containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field. At least one of the electrodes is formed of conductive material having a melting point greater than 1800° C.
摘要翻译： 纳米尺度开关器件提供了对开关周期的增强的热稳定性和耐久性。 开关器件具有设置在电极之间的有源区，并且包含能够承载一种掺杂剂并在电场下输送掺杂剂的开关材料。 至少一个电极由熔点大于1800℃的导电材料形成。
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