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    INKJET PRINTHEAD AND METHOD OF MANUFACTURING THE SAME
    11.
    发明申请
    INKJET PRINTHEAD AND METHOD OF MANUFACTURING THE SAME 有权
    喷墨打印机及其制造方法

    公开(公告)号：US20100128091A1

    公开(公告)日：2010-05-27

    申请号：US12575094

    申请日：2009-10-07

    Applicant: Myong-Jong KWON ,  Sung-Joon Park ,  Jin-Wook Lee

    Inventor： Myong-Jong KWON ,  Sung-Joon Park ,  Jin-Wook Lee

    IPC: B41J2/05 ,  B21D53/76

    CPC classification number: B41J2/14032 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/164 ,  Y10T29/49401

    Abstract: Disclosed are an inkjet printhead and a method of fabricating the same. The inkjet printhead can include a substrate; a chamber layer formed on the substrate and a nozzle layer formed on the chamber layer. The chamber layer defines one or more ink chambers in which ink to be ejected may be accommodated. The nozzle layer includes one or more nozzles through which the ink from the ink chambers are ejected. The nozzle layer may be formed of a cured product of a photosensitive dry film that includes an light absorption material.

    Abstract translation: 公开了一种喷墨打印头及其制造方法。 喷墨打印头可以包括基板; 形成在基板上的室层和形成在室层上的喷嘴层。 室层限定一个或多个墨室，其中可以容纳待排出的墨。 喷嘴层包括一个或多个喷嘴，通过该喷嘴喷射来自墨室的墨。 喷嘴层可以由包含光吸收材料的感光干膜的固化产物形成。

    Flash memory device capable of reduced programming time
    12.
    发明授权
    Flash memory device capable of reduced programming time 失效
    闪存设备能够减少编程时间

    公开(公告)号：US07636265B2

    公开(公告)日：2009-12-22

    申请号：US11264168

    申请日：2005-11-02

    Applicant: Min-Gun Park ,  Jin-Wook Lee ,  Sang-Won Hwang

    Inventor： Min-Gun Park ,  Jin-Wook Lee ,  Sang-Won Hwang

    IPC: G11C7/00 ,  G11C7/22

    CPC classification number: G11C16/3404

    Abstract: A flash memory device comprising a high voltage generator circuit that is adapted to supply a program voltage having a target voltage to a selected word line is provided. The flash memory device is adapted to terminate the program interval in accordance with when the program voltage has been restored to the target voltage after dropping below the target voltage. A method for operating the flash memory device is also provided.

    Abstract translation: 提供了一种闪存器件，其包括适于将具有目标电压的编程电压提供给所选字线的高压发生器电路。 闪存器件适于根据在降低到目标电压之后的程序电压恢复到目标电压时终止编程间隔。 还提供了一种用于操作闪速存储器件的方法。

    Plasma Ion Doping Method and Apparatus
    13.
    发明申请
    Plasma Ion Doping Method and Apparatus 审中-公开
    等离子体离子掺杂法和仪器

    公开(公告)号：US20090068823A1

    公开(公告)日：2009-03-12

    申请号：US12145914

    申请日：2008-06-25

    Applicant: Soo Jin Hong ,  Si-Young Choi ,  Tai-Su Park ,  Jin-Wook Lee ,  Jong-Hoon Kang ,  Mi-Jin Kim

    Inventor： Soo Jin Hong ,  Si-Young Choi ,  Tai-Su Park ,  Jin-Wook Lee ,  Jong-Hoon Kang ,  Mi-Jin Kim

    IPC: H01L21/02 ,  H01J37/08

    CPC classification number: H01L21/2236 ,  H01J37/32412 ,  H01J37/32449

    Abstract: In plasma ion doping operations, a wafer is positioned on a susceptor within a reaction chamber and an ion doping source gas is plasmalyzed in an upper part of the reaction chamber above a major surface of the wafer while supplying a control gas into the reaction chamber in a lower part of the reaction chamber opposite the major surface of the wafer to thereby dope ions into the major surface of the wafer. The ion doping source gas may comprise at least one halide gas, and the control gas may comprise at least one depositing gas, such as a silane gas. In further embodiments, a diluent gas, such as an inert gas, may be supplied to the reaction chamber while supplying the ion doping source gas and the control gas. Related plasma ion doping apparatus are described.

    Abstract translation: 在等离子体离子掺杂操作中，将晶片定位在反应室内的基座上，并且将离子掺杂源气体在晶片的主表面上方的反应室上部进行等离子化，同时将控制气体供应到反应室中 反应室的下部与晶片的主表面相对，从而将离子掺杂到晶片的主表面。 离子掺杂源气体可以包括至少一种卤化物气体，并且控制气体可以包括至少一种沉积气体，例如硅烷气体。 在另外的实施方案中，可以向反应室供应诸如惰性气体的稀释气体，同时供应离子掺杂源气体和控制气体。 描述了相关的等离子体离子掺杂装置。

    SHOE INSOLE SENSOR FOR WALK DIAGNOSIS AND SHOE INSOLE FLEXIBLE BOARD COMBINED WITH THE SAME
    19.
    发明申请
    SHOE INSOLE SENSOR FOR WALK DIAGNOSIS AND SHOE INSOLE FLEXIBLE BOARD COMBINED WITH THE SAME 审中-公开
    用于卧铺诊断和鞋子弹性板的SHOE INSOLE传感器

    公开(公告)号：US20140326085A1

    公开(公告)日：2014-11-06

    申请号：US14360493

    申请日：2012-11-15

    Applicant: Jin-Wook LEE

    Inventor： Jin-Wook Lee

    IPC: A61B5/11

    CPC classification number: A61B5/1116 ,  A43B3/0005 ,  A61B5/1036 ,  A61B5/112 ,  A61B5/6807 ,  A61B5/6829

    Abstract: A shoe insole sensor includes a body including a plurality of recessed regions formed at respective locations corresponding to vertexes of N-polygon, where N is an even number, a plurality of first protrusions formed in odd recessed regions of the recessed regions, where each of the first protrusions has a first height, and a plurality of second protrusions formed in even recessed regions of the recessed regions, where each of the second protrusions has a second height different from the first height. Here, the body is formed with a nonconductive material, each of the first protrusions is formed with a conductive material, and each of the second protrusions is formed with a conductive material.

    Abstract translation: 鞋内底传感器包括主体，其包括形成在对应于N多边形的顶点的各个位置处的多个凹陷区域，其中N是偶数，多个第一突起形成在凹陷区域的奇数凹进区域中， 第一突起具有第一高度，以及形成在凹陷区域的均匀凹陷区域中的多个第二突起，其中每个第二突起具有不同于第一高度的第二高度。 这里，主体由非导电材料形成，每个第一突起形成有导电材料，并且每个第二突起形成有导电材料。

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