公开(公告)号：US06582777B1

公开(公告)日：2003-06-24

申请号：US09506515

申请日：2000-02-17

Applicant: Matthew Ross ,  Heike Thompson ,  Jingjun Yang

Inventor： Matthew Ross ,  Heike Thompson ,  Jingjun Yang

IPC: B05D306

CPC classification number: C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02131 ,  H01L21/0217 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/314 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/318

Abstract: A process for forming low dielectric constant dielectric films for the production of microelectronic devices. A dielectric layer is formed on a substrate by chemical vapor depositing a monomeric or oligomeric dielectric precursor in a chemical vapor deposit apparatus, or a reaction product formed from the precursor in the apparatus, onto a substrate, to form a layer on a surface of a substrate. After optionally heating the layer at a sufficient time and temperature to dry the layer, the layer is then exposed to electron beam radiation, for a sufficient time, temperature, electron beam energy and electron beam dose to modify the layer. The electron beam exposing step is conducted by overall exposing the dielectric layer with a wide, large beam of electron beam radiation from a large-area electron beam source.

Abstract translation: 一种用于形成用于生产微电子器件的低介电常数介电膜的方法。 通过化学气相沉积在化学气相沉积设备中的单体或低聚物电介质前体或在设备中由前体形成的反应产物，在基底上形成电介质层，以在基底上形成层 基质。 在任选地在足够的时间和温度下加热该层以干燥该层，然后将该层暴露于电子束辐射足够长的时间，温度，电子束能量和电子束剂量以修饰该层。 电子束曝光步骤通过用来自大面积电子束源的宽大的大束电子束辐射来全面暴露电介质层来进行。

公开(公告)号：US06235353B1

公开(公告)日：2001-05-22

申请号：US09245060

申请日：1999-02-05

Applicant: James S. Drage ,  Jingjun Yang ,  Dong Kyu Choi

Inventor： James S. Drage ,  Jingjun Yang ,  Dong Kyu Choi

IPC: C08F248

CPC classification number: H01L21/0212 ,  B05D3/0254 ,  B05D3/065 ,  B05D3/068 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/312 ,  Y10S522/904 ,  Y10S522/905

Abstract: Production of a dielectric coating on a substrate whereby a poly(arylene ethers) or fluorinated poly(arylene ethers) layer is cured by exposure to electron beam radiation. A wide area electron beam is used which causes chemical reactions to occur in the polymer structure which are thought to cause crosslinks between polymer chains. The crosslinks lead to higher mechanical strength and higher glass transition temperature, lower thermal expansion coefficient, greater thermal-chemical stability and greater resistance to aggressive organic solvents. The polymer layer may also be optionally heated, thermally annealed, and/or exposed to UV actinic light.

Abstract translation: 在基底上制备电介质涂层，由此通过暴露于电子束辐射固化聚（亚芳基醚）或氟化聚（亚芳基醚）层。 使用广泛的电子束，其导致在聚合物结构中发生化学反应，这被认为引起聚合物链之间的交联。 交联导致更高的机械强度和更高的玻璃化转变温度，更低的热膨胀系数，更高的热化学稳定性和更大的抗侵蚀性有机溶剂的抵抗力。 聚合物层也可以任选地被加热，热退火和/或暴露于UV光化学光。

公开(公告)号：US6042994A

公开(公告)日：2000-03-28

申请号：US227734

申请日：1999-01-08

Applicant: Jingjun Yang ,  James S. Drage ,  Lynn Forester

Inventor： Jingjun Yang ,  James S. Drage ,  Lynn Forester

IPC: B05D3/06 ,  B05D5/12 ,  H01L21/027 ,  H01L21/312 ,  H01L21/316 ,  G03F7/09

CPC classification number: H01L21/316 ,  B05D3/068 ,  B05D5/12

Abstract: Nanoporous silica dielectric films are modified by electron beam exposure after an optional hydrophobic treatment by an organic reactant. After formation of the film onto a substrate, the substrate is placed inside a large area electron beam exposure system. The resulting films are characterized by having a low dielectric constant and low water or silanol content compared to thermally cured films. Also, e-beam cured films have higher mechanical strength and better resistance to chemical solvents and oxygen plasmas compared to thermally cured films.

Abstract translation: 在通过有机反应物进行任选的疏水处理之后，通过电子束暴露来修饰纳米多孔硅介电膜。 在将膜形成在基板上之后，将基板放置在大面积的电子束曝光系统的内部。 所得膜的特征在于与热固化膜相比具有低介电常数和低水或硅烷醇含量。 此外，与热固化膜相比，电子束固化膜具有更高的机械强度和更好的耐化学溶剂和氧等离子体的性能。