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18 条记录 (耗时 0.022 秒)

    RF impedance matching network with secondary frequency and sub-harmonic variant
    11.
    发明授权
    RF impedance matching network with secondary frequency and sub-harmonic variant 有权
    射频阻抗匹配网络与次级和次谐波变量

    公开(公告)号：US08491759B2

    公开(公告)日：2013-07-23

    申请号：US12908745

    申请日：2010-10-20

    申请人： John A. Pipitone ,  Gerald E. Boston

    发明人： John A. Pipitone ,  Gerald E. Boston

    IPC分类号： C23C14/34

    CPC分类号： C23C14/354 ,  C23C14/54 ,  H01J37/32183 ,  H01J37/34 ,  H01J37/3405 ,  H01J37/3444

    摘要： Embodiments of the disclosure may provide a matching network for physical vapor deposition. The matching network may include a first RF generator coupled to a deposition chamber target through a first impedance matching network having a first tuning circuit. The first RF generator may be configured to introduce a first AC signal to the deposition chamber target. The matching network may also include a second RF generator coupled to a deposition chamber pedestal through a second impedance matching network. The second RF generator may be configured to introduce a second AC signal to the deposition chamber pedestal. The first tuning circuit may be configured to modify an effect of the second AC signal on plasma formed between the deposition chamber target and the deposition chamber pedestal.

    摘要翻译： 本公开的实施例可以提供用于物理气相沉积的匹配网络。 匹配网络可以包括通过具有第一调谐电路的第一阻抗匹配网络耦合到沉积室目标的第一RF发生器。 第一RF发生器可以被配置为将第一AC信号引入到沉积室靶。 匹配网络还可以包括通过第二阻抗匹配网络耦合到沉积室基座的第二RF发生器。 第二RF发生器可以被配置为将第二AC信号引入到沉积室基座。 第一调谐电路可以被配置为修改第二AC信号对在沉积室靶和沉积室基座之间形成的等离子体的影响。

    RF IMPEDANCE MATCHING NETWORK WITH SECONDARY FREQUENCY AND SUB-HARMONIC VARIANT
    13.
    发明申请
    RF IMPEDANCE MATCHING NETWORK WITH SECONDARY FREQUENCY AND SUB-HARMONIC VARIANT 有权
    具有二次频率和次谐波变化的射频阻抗匹配网络

    公开(公告)号：US20120097524A1

    公开(公告)日：2012-04-26

    申请号：US12908745

    申请日：2010-10-20

    申请人： John A. Pipitone ,  Gerald E. Boston

    发明人： John A. Pipitone ,  Gerald E. Boston

    IPC分类号： C23C14/54 ,  C23C14/34

    CPC分类号： C23C14/354 ,  C23C14/54 ,  H01J37/32183 ,  H01J37/34 ,  H01J37/3405 ,  H01J37/3444

    摘要： Embodiments of the disclosure may provide a matching network for physical vapor deposition. The matching network may include a first RF generator coupled to a deposition chamber target through a first impedance matching network having a first tuning circuit. The first RF generator may be configured to introduce a first AC signal to the deposition chamber target. The matching network may also include a second RF generator coupled to a deposition chamber pedestal through a second impedance matching network. The second RF generator may be configured to introduce a second AC signal to the deposition chamber pedestal. The first tuning circuit may be configured to modify an effect of the second AC signal on plasma formed between the deposition chamber target and the deposition chamber pedestal.

    摘要翻译： 本公开的实施例可以提供用于物理气相沉积的匹配网络。 匹配网络可以包括通过具有第一调谐电路的第一阻抗匹配网络耦合到沉积室目标的第一RF发生器。 第一RF发生器可以被配置为将第一AC信号引入到沉积室靶。 匹配网络还可以包括通过第二阻抗匹配网络耦合到沉积室基座的第二RF发生器。 第二RF发生器可以被配置为将第二AC信号引入到沉积室基座。 第一调谐电路可以被配置为修改第二AC信号对在沉积室靶和沉积室基座之间形成的等离子体的影响。

    Physical vapor deposition plasma reactor with arcing suppression
    15.
    发明授权
    Physical vapor deposition plasma reactor with arcing suppression 有权
    具有电弧抑制的物理气相沉积等离子体反应器

    公开(公告)号：US07804040B2

    公开(公告)日：2010-09-28

    申请号：US11438496

    申请日：2006-05-22

    申请人： Karl M. Brown ,  Semyon Sherstinksy ,  Vineet H. Mehta ,  Wei W. Wang ,  John A. Pipitone ,  Kurt J. Ahmann ,  Armando Valverde, Jr.

    发明人： Karl M. Brown ,  Semyon Sherstinksy ,  Vineet H. Mehta ,  Wei W. Wang ,  John A. Pipitone ,  Kurt J. Ahmann ,  Armando Valverde, Jr.

    IPC分类号： B23K9/00

    CPC分类号： H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

    摘要： A physical vapor deposition reactor includes a vacuum chamber with a sidewall, a ceiling and a retractable wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, the retractable wafer support pedestal having an internal electrode and a grounded base with a conductive annular flange extending from the base. A metal sputter target at the ceiling is energized by a high voltage D.C. source. The reactor has an RF plasma source power generator with a frequency suitable for exciting kinetic electrons is coupled to either the sputter target or to the internal electrode of the pedestal. A removable shield protects the sidewall and is grounded by plural compressible conductive tabs dispersed at generally uniform intervals on the annular flange and engaging a bottom edge of the shield whenever the retractable wafer support pedestal is in an unretracted position, each of the uniform intervals being less than a wavelength corresponding to the frequency of the RF plasma source power generator.

    摘要翻译： 物理气相沉积反应器包括具有侧壁的真空室，天花板和靠近室的地板附近的可缩回的晶片支撑基座，以及耦合到室的真空泵，所述可缩回晶片支撑基座具有内部电极和接地基座 具有从基座延伸的导电环形凸缘。 天花板上的金属溅射靶由高电压直流电源供电。 反应器具有RF等离子体源功率发生器，其具有适于激发动电子的频率，耦合到溅射靶或底座的内部电极。 可拆卸的屏蔽件保护侧壁并且通过在环形凸缘上以大致均匀间隔分散的多个可压缩导电片接地，并且每当可缩回的晶片支撑基座处于未受损的位置时，接合屏蔽的底部边缘，每个均匀间隔较小 比对应于RF等离子体源发生器的频率的波长。

    RF IMPEDANCE MATCHING NETWORK WITH SECONDARY DC INPUT
    16.
    发明申请
    RF IMPEDANCE MATCHING NETWORK WITH SECONDARY DC INPUT 审中-公开
    RF阻抗匹配网络与二次直流输入

    公开(公告)号：US20120097104A1

    公开(公告)日：2012-04-26

    申请号：US12908727

    申请日：2010-10-20

    申请人： John A. Pipitone ,  Gerald E. Boston

    发明人： John A. Pipitone ,  Gerald E. Boston

    IPC分类号： C23C16/503 ,  H02J3/02

    CPC分类号： H02J3/02 ,  C23C14/34 ,  C23C14/54 ,  H01J37/34 ,  H01J37/3444

    摘要： Embodiments of the disclosure may provide a matching network for a physical vapor deposition system. The matching network may include an RF generator coupled to a first input of an impedance matching network, and a DC generator coupled a second input of the impedance matching network. The impedance matching network may be configured to receive an RF signal from the RF generator and a DC signal from the DC generator and cooperatively communicate both signals to a deposition chamber target through an output of the impedance matching network. The matching network may also include a filter disposed between the second input and the output of the impedance matching network.

    摘要翻译： 本公开的实施例可以提供用于物理气相沉积系统的匹配网络。 匹配网络可以包括耦合到阻抗匹配网络的第一输入端的RF发生器和耦合到阻抗匹配网络的第二输入端的DC发生器。 阻抗匹配网络可以被配置为从RF发生器接收RF信号和来自DC发生器的DC信号，并且通过阻抗匹配网络的输出协同地将两个信号传送到沉积室目标。 匹配网络还可以包括布置在第二输入端和阻抗匹配网络的输出端之间的滤波器。

    Wafer pre-clean reactor cable termination for selective suppression/reflection of source and bias frequency cross products
    17.
    发明授权
    Wafer pre-clean reactor cable termination for selective suppression/reflection of source and bias frequency cross products 有权
    晶圆预清洁电抗器电缆终端用于选择性抑制/反射源极和偏置频率交叉产品

    公开(公告)号：US07780814B2

    公开(公告)日：2010-08-24

    申请号：US11178118

    申请日：2005-07-08

    申请人： John A. Pipitone ,  Kenneth D. Smyth ,  Mei Po (Mabel) Yeung

    发明人： John A. Pipitone ,  Kenneth D. Smyth ,  Mei Po (Mabel) Yeung

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H05B31/26

    CPC分类号： H01J37/32174 ,  H01J37/321

    摘要： A plasma reactor for processing a workpiece in a reactor chamber having a wafer support pedestal within the chamber and process gas injection apparatus, an RF bias power generator coupled to the wafer support pedestal and having a bias frequency, a source power applicator, an RF source power generator having a source frequency and a coaxial cable coupled between the RF source power generator and the source power applicator includes a filter connected between the coaxial cable and the source power applicator that enhances uniformity of etch rate across the wafer and from reactor to reactor. The filter includes a set of reflection circuits coupled between the source power applicator and a ground potential and being tuned to, respectively, the bias frequency and intermodulation products of the bias frequency and the source frequency. The filter may further include a set of filter circuits coupled to the source power applicator and being tuned to, respectively, a second harmonic of the bias frequency and intermodulation products of the second harmonic of the bias frequency and the source frequency.

    摘要翻译： 一种等离子体反应器，用于在反应室内处理工件，所述反应室具有在所述室内的晶片支撑基座和处理气体注入装置，耦合到晶片支撑基座并具有偏置频率的RF偏置功率发生器，源功率施加器，RF源 源极频率的发电机和耦合在RF源功率发生器和源功率施加器之间的同轴电缆包括连接在同轴电缆和源电源施加器之间的滤波器，其增强跨晶片和从反应器到反应器的蚀刻速率的均匀性。 滤波器包括耦合在源功率施加器和接地电位之间并且分别被调谐到偏置频率和偏置频率和源频率的偏调产物的一组反射电路。 滤波器还可以包括耦合到源功率施加器的一组滤波器电路，并且分别被调谐到偏置频率的二次谐波和偏置频率和源频率的二次谐波的互调乘积。