公开(公告)号：US4949927A

公开(公告)日：1990-08-21

申请号：US422595

申请日：1989-10-17

Applicant: John E. Madocks ,  Thomas M. Young

Inventor： John E. Madocks ,  Thomas M. Young

IPC: A61B17/28 ,  A61B19/00 ,  F16M11/40 ,  F16M13/02 ,  F21V21/32

CPC classification number: F21V21/32 ,  F16M11/14 ,  F16M11/2078 ,  F16M11/40 ,  F16M13/022 ,  F21V21/29 ,  A61B2017/2905 ,  A61B90/50 ,  F16M2200/065 ,  Y10T403/32024 ,  Y10T403/32032

Abstract: Presented is a method and apparatus for incrementally varying the frictional forces along an articulable column having succesive joints formed of alternate ball and socket members. Friction is varied by varying the contact angle between said ball and socket members along the length of the column and by supplying a compressive force to said joints via a tensioned means throughout the column. The effect of varying the frictional forces along the column is to vary the stiffness of individual column joints creating a structural member which can be tailored to the load requirements of a specific application.

Abstract translation: 提出了一种用于沿着具有由替代的球窝构件形成的连续关节的可铰接柱逐渐改变摩擦力的方法和装置。 通过沿着柱的长度改变所述球形和插座构件之间的接触角并且通过整个柱的张紧装置向所述接头提供压缩力来改变摩擦。 改变沿柱的摩擦力的效果是改变单个柱接头的刚度，产生可以根据特定应用的负载要求而定制的结构构件。

公开(公告)号：US20130029123A1

公开(公告)日：2013-01-31

申请号：US13445460

申请日：2012-04-12

Applicant: John E. Madocks

Inventor： John E. Madocks

IPC: C23C16/513 ,  C23C16/40 ,  B32B9/00

CPC classification number: C23C16/407 ,  C23C16/513 ,  C23C16/545

Abstract: A process for the deposition of a tin oxide film is provided that includes the decomposition of a tetravalent tin precursor under conditions of plasma enhanced chemical vapor deposition in a linear plasma source and onto a substrate moving through a plasma generated by the linear plasma source with a linear uniformity of thickness that varies by less than 5 thickness percent across the substrate. The substrate having a width of greater than 30 centimeters. The tin oxide film contains a dopant and a dopant concentration such that the film has a resistivity as a function of film deposition temperature of less than −4.6×10−5 Ohm-centimeter per degree Kelvin (T) plus 0.01 Ohm-centimeter where T is between 293 Kelvin and 673 Kelvin.

Abstract translation: 提供了一种用于沉积氧化锡膜的方法，其包括在线性等离子体源中的等离子体增强化学气相沉积条件下的四价锡前体的分解和通过线性等离子体源产生的等离子体移动的衬底上 衬底的厚度的线性均匀度变化小于5厚度百分比。 基片的宽度大于30厘米。 氧化锡膜包含掺杂剂和掺杂剂浓度，使得该膜具有小于-4.6×10-5欧姆厘米每开氏度（T）加0.01欧姆厘米的膜沉积温度的函数的电阻率，其中T 在293开尔文和673开尔文之间。

公开(公告)号：US20120261253A1

公开(公告)日：2012-10-18

申请号：US13504366

申请日：2010-10-26

Applicant: John E. Madocks ,  Patrick Lawrence Morse ,  Phong Ngo

Inventor： John E. Madocks ,  Patrick Lawrence Morse ,  Phong Ngo

IPC: C23C14/35

CPC classification number: C23C14/54 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3452 ,  H01J37/3482 ,  H01J2237/24585 ,  H01J2237/332

Abstract: An apparatus for coating a substrate is provided that includes a racetrack-shaped plasma source having two straight portions and at least one terminal turnaround portion connecting said straight portions. A tubular target formed of a target material that forms a component of the coating has an end. The target is in proximity to the plasma source for sputtering of the target material. The target is secured to a tubular backing cathode, with both being rotatable about a central axis. A set of magnets are arranged inside the cathode to move an erosion zone aligned with the terminal turnaround toward the end of the target as the target is utilized to deposit the coating on the substrate. Target utilization of up to 87 weight percent the initial target weight is achieved.

Abstract translation: 提供了一种用于涂覆基板的设备，其包括具有两个直线部分的跑道形等离子体源和连接所述直线部分的至少一个终端周转部分。 由形成涂层组分的目标材料形成的管状目标具有一端。 目标在等离子体源附近用于目标材料的溅射。 目标被固定到管状背衬阴极，两者都可围绕中心轴线旋转。 一组磁体布置在阴极内部，以便当靶被用于将涂层沉积在基底上时，将与端子周转的侵蚀区域朝向靶的端部移动。 目标利用率达到初始目标重量的87％（重量）。

公开(公告)号：US20120187843A1

公开(公告)日：2012-07-26

申请号：US13388531

申请日：2010-08-03

Applicant: John E. Madocks

Inventor： John E. Madocks

IPC: H05H1/46 ,  H01J27/02

CPC classification number: H01J37/08 ,  H01J27/143 ,  H01J37/30 ,  H01J2237/061

Abstract: A closed drift ion source is provided comprising a single magnetic source, a first pole and a second pole. The ends of the first and second poles are separated by a gap. The magnetic source is disposed proximate to one of the first pole and second pole. A first magnetic path is provided between one magnetic pole of the single magnetic source and the end of the first pole. A second magnetic path is provided between the other magnetic pole of the single magnetic source and the end of the second pole. The first and second magnetic paths are selectively constructed to produce a symmetrical magnetic field in the gap.

Abstract translation: 提供一种闭合漂移离子源，其包括单个磁源，第一极和第二极。 第一和第二极的端部被间隙隔开。 磁源靠近第一极和第二极的一个设置。 第一磁路设置在单个磁场的一个磁极和第一极的端部之间。 第二磁路设置在单个磁场的另一磁极和第二极的端部之间。 选择性地构造第一和第二磁路以在间隙中产生对称的磁场。

公开(公告)号：US20110226611A1

公开(公告)日：2011-09-22

申请号：US13132762

申请日：2009-12-08

Applicant: John E. Madocks

Inventor： John E. Madocks

IPC: C23C14/34

CPC classification number: H01J37/08 ,  H01J27/143 ,  H01J37/3053 ,  H01J37/317 ,  H01J37/32862 ,  H01J37/3405 ,  H01J2237/081

Abstract: A process for modifying a surface of a substrate is provided that includes supplying electrons to an electrically isolated anode electrode of a closed drift ion source. The anode electrode has an anode electrode charge bias that is positive while other components of the closed drift ion source are electrically grounded or support an electrical float voltage. The electrons encounter a closed drift magnetic field that induces ion formation. Anode contamination is prevented by switching the electrode charge bias to negative in the presence of a gas, a plasma is generated proximal to the anode electrode to clean deposited contaminants from the anode electrode. The electrode charge bias is then returned to positive in the presence of a repeat electron source to induce repeat ion formation to again modify the surface of the substrate. An apparatus for modification of a surface of a substrate by this process is provided.

Abstract translation: 提供了一种用于修改衬底表面的方法，其包括向闭合漂移离子源的电隔离的阳极提供电子。 阳极电极具有正极的阳极电极偏压，而闭合漂移离子源的其它部件电接地或支持电浮动电压。 电子遇到诱发离子形成的闭合漂移磁场。 通过在存在气体的情况下将电极充电偏压切换为负来防止阳极污染，在阳极电极附近产生等离子体以清除来自阳极电极的沉积的污染物。 然后在存在重复电子源的情况下将电极充电偏压返回到正值，以引起重复的离子形成，以再次改变衬底的表面。 提供了一种通过该方法修改基板的表面的装置。

公开(公告)号：US4753417A

公开(公告)日：1988-06-28

申请号：US695585

申请日：1985-01-28

Applicant: John E. Madocks ,  Alex Boozenny

Inventor： John E. Madocks ,  Alex Boozenny

IPC: B05B15/12 ,  F16K31/524 ,  F16K51/02 ,  F16K25/00

CPC classification number: F16K31/524 ,  F16K51/02

Abstract: A gate valve for sealing an opening in the wall of a vacuum processing chamber is disclosed. The valve includes a gate having a pair of wheels mounted on opposite ends of the gate and a curved track aligned and shaped to guide the wheels through an angle so that the plane of the gate is rotated out of the path of substrates as the gate moves between its sealing and open positions. The curvature of the track should be sufficient to rotate the gate through an angle of at least 60.degree., and preferably 75.degree. to 105.degree., in order to minimize the dimension of the chamber normal to the direction of substrate travel.

Abstract translation: 公开了一种用于密封真空处理室的壁中的开口的闸阀。 该阀包括一个门，该门具有安装在门的相对端部上的一对轮子，以及弯曲轨道，该轨道对准和成形为将车轮引导成一定角度，使得当门移动时门的平面旋转离开衬底路径 在其密封和打开位置之间。 轨道的曲率应足以使门旋转至少60°，优选75°至105°的角度，以便最小化垂直于衬底移动方向的室的尺寸。