Abstract:
A method and apparatus for directing an ion beam toward a surface of a substrate is disclosed. Certain embodiments of the invention relate generally to ion beam sources adapted to direct ion beams toward a surface of a substrate at an oblique angle of incidence relative to the surface. Certain embodiments of the invention are adapted to direct two ion beam portions toward a substrate surface, the ion beam portions having substantially equal throw distances. Preferred embodiments of the invention may be useful in etching applications, where the angle of incidence and throw distance of two ion beam portions are well suited for etching the surface of a substrate.
Abstract:
A rotary magnetron is provided with an end block for rotatably supporting a target on an axis of rotation. An elongate magnetic bar assembly is disposed within the target. A stator shaft is affixed in the end block; one end of the stator shaft is coupled to the elongate magnetic bar assembly to support the elongate magnetic bar assembly. The target has a target shaft extending over the stator shaft and rotatable thereon around the axis of rotation. The rotary magnetron is characterized by a rotating coolant seal disposed inside the target shaft proximate the one end of the stator shaft and proximate to the elongate magnetic bar assembly.
Abstract:
In some embodiments, the invention includes a cylindrical cathode target assembly for use in sputtering target material onto a substrate that comprises a generally cylindrical target, means for rotating the target about its axis during a sputtering operation, an elongated magnet carried within the target for generation of a plasma-containing magnetic field exterior to but adjacent the target, a framework for supporting the magnet against rotation within the target, and a power train for causing the magnet to oscillate within and axially of the target in a substantially asynchronous manner to promote generally uniform target utilization along its length, as well as its method of use. In some embodiments, the magnet is oscillated in response to rotation of the target.
Abstract:
A method and apparatus for evacuating an enclosed chamber which utilizes a tandem connection of a booster pump and a mechanical pump in a manner to maximize the rate of evacuation of the chamber but without exceeding the rating of the booster pump and damaging it. A gas bypass around the booster pump is provided with a proportional valve that is operated to start an evacuation of the chamber with the bypass path fully opened but the gradually closing that path in a manner to maintain a differential pressure across the booster pump at a predetermined level, until the bypass path has been fully closed.
Abstract:
An apparatus for coating a substrate is provided that includes a racetrack-shaped plasma source having two straight portions and at least one terminal turnaround portion connecting said straight portions. A tubular target formed of a target material that forms a component of the coating has an end. The target is in proximity to the plasma source for sputtering of the target material. The target is secured to a tubular backing cathode, with both being rotatable about a central axis. A set of magnets are arranged inside the cathode to move an erosion zone aligned with the terminal turnaround toward the end of the target as the target is utilized to deposit the coating on the substrate. Target utilization of up to 87 weight percent the initial target weight is achieved.
Abstract:
A pair of plasma beam sources are connected across an AC power supply to alternatively produce an ion beam for depositing material on a substrate transported past the ion beams. Each plasma beam source includes a discharge cavity having a first width and a nozzle extending outwardly therefrom to emit the ion beam. The aperture or outlet of the nozzle has a second width, which second width is less than the first width. An ionizable gas is introduced to the discharge cavity. At least one electrode connected to the AC power supply, alternatively serving as an anode or a cathode, is capable of supporting at least one magnetron discharge region within the discharge cavity when serving as a cathode electrode. A plurality of magnets generally facing one another, are disposed adjacent each discharge cavity to create a magnetic field null region within the discharge cavity.
Abstract:
A plasma source which includes a discharge cavity having a first width, where that discharge cavity includes a top portion, a wall portion, and a nozzle disposed on the top portion and extending outwardly therefrom, where the nozzle is formed to include an aperture extending through the top portion and into the discharge cavity, wherein the aperture has a second width, where the second width is less than the first width. The plasma source further includes a power supply, a conduit disposed in the discharge cavity for introducing an ionizable gas therein, and at least one cathode electrode connected to the power supply, where that cathode electrode is capable of supporting at least one magnetron discharge region within the discharge cavity. The plasma source further includes a plurality of magnets disposed adjacent the wall portion, where that plurality of magnets create a null magnetic field point within the discharge cavity.
Abstract:
A process for modifying a surface of a substrate is provided that includes supplying electrons to an electrically isolated anode electrode of a closed drift ion source. The anode electrode has an anode electrode charge bias that is positive while other components of the closed drift ion source are electrically grounded or support an electrical float voltage. The electrons encounter a closed drift magnetic field that induces ion formation. Anode contamination is prevented by switching the electrode charge bias to negative in the presence of a gas, a plasma is generated proximal to the anode electrode to clean deposited contaminants from the anode electrode. The electrode charge bias is then returned to positive in the presence of a repeat electron source to induce repeat ion formation to again modify the surface of the substrate. An apparatus for modification of a surface of a substrate by this process is provided.
Abstract:
A process for producing plasma coated glass substrates free of back side coating (BSC) is provided. A low-E glass coated structure is also provided that uses a BSC as a protective coating that promotes transport and handling of low-E glass that is then subsequently delaminated. A thin film is deposited on the back side of the glass substrate before the top side of the glass is coated. Then, during the sputter down process, BSC occurs as normal and deposits over this back side film (BSF). In a subsequent process, outside the vacuum chamber, the glass back side is washed or otherwise delaminated. The BSF composition is selected to make the BSC easily removed in this wash process or other delamination process.
Abstract:
A process for powering an electrical load includes applying a rectified alternating current waveform across the load for a first time period with only a single power supply for at least two half cycles. At least one half cycle of an alternating current waveform of opposite polarity are then applied relative to the rectified alternating current waveform across the load for a second time period. Rectified alternating current waveform is then again applied across the load for at least two half cycles for a third time period to power the electrical load. The rectified alternating current waveform can be applied a direct current offset. A power supply is provided for provided power across the load according to this process.