利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

36 条记录 (耗时 0.03 秒)

    Multi element, multi color solid state LED/laser
    11.
    发明授权
    Multi element, multi color solid state LED/laser 有权
    多元素，多色固态LED /激光

    公开(公告)号：US08035117B2

    公开(公告)日：2011-10-11

    申请号：US11484233

    申请日：2006-07-10

    申请人： Steven P. DenBaars ,  Eric J. Tarsa ,  Michael Mack ,  Bernd Keller ,  Brian Thibeault

    发明人： Steven P. DenBaars ,  Eric J. Tarsa ,  Michael Mack ,  Bernd Keller ,  Brian Thibeault

    IPC分类号： H01L33/00

    CPC分类号： H01L33/30 ,  H01L25/0756 ,  H01L27/15 ,  H01L27/153 ,  H01L33/08 ,  H01L33/343 ,  H01L33/502 ,  H01L33/504 ,  H01L2924/0002 ,  H01S3/0627 ,  H01S3/0941 ,  H01S3/09415 ,  H01S3/1623 ,  H01S3/1628 ,  H01S5/0206 ,  H01S5/0287 ,  H01S5/1032 ,  H01S5/183 ,  H01S5/18361 ,  H01S5/32341 ,  H01L2924/00

    摘要： A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition elements. The dopant ions absorb some or all of the light from the LED's active layer, pumping the dopant ion electrons to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green, blue and UV light, such that the LED emits green, blue, red and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state lasers having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth of transition elements.

    摘要翻译： 在掺杂有一种或多种稀土或过渡元素的衬底上生长的发光二极管（LED）。 掺杂剂离子吸收来自LED有源层的一些或全部光，将掺杂剂离子电子泵送到更高的能量状态。 电子被自然地吸收到它们的平衡状态，并且它们以取决于掺杂剂离子的类型的波长发光。 本发明特别适用于发射紫外光并在掺杂有铬的蓝宝石衬底上生长的基于氮化物的LED。 铬离子吸收紫外光，激发离子上的电子到更高的能量状态。 当它们回到它们的平衡状态时，它们发出红光，并且一些红光将从LED的表面发射。 LED还可以具有发射绿色，蓝色和紫外光的有源层，使得LED发射绿色，蓝色，红色和紫外光，结合以产生白光。 或者，它可以具有一个活性层并在掺杂有Cr，Ti和Co的蓝宝石衬底上生长，使得衬底吸收UV光并发出蓝色，绿色和红色光。 本发明还能够在各种色调上提供可调LED。 本发明也适用于具有一个或多个有源层发射紫外光的固态激光器，其中激光生长在掺杂有一个或多个稀土过渡元素的蓝宝石衬底上。

    Light emitting diodes including transparent oxide layers
    13.
    发明授权
    Light emitting diodes including transparent oxide layers 有权
    包括透明氧化物层的发光二极管

    公开(公告)号：US07420222B2

    公开(公告)日：2008-09-02

    申请号：US11842350

    申请日：2007-08-21

    申请人： David B. Slater, Jr. ,  Robert C. Glass ,  Charles M. Swoboda ,  Bernd Keller ,  James Ibbetson ,  Brian Thibeault ,  Eric J. Tarsa

    发明人： David B. Slater, Jr. ,  Robert C. Glass ,  Charles M. Swoboda ,  Bernd Keller ,  James Ibbetson ,  Brian Thibeault ,  Eric J. Tarsa

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/10 ,  H01L33/405 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32014 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

    摘要： Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the second face. A diode region on the second face is configured to emit light in the predetermined wavelength range, into the substrate upon application of voltage across the diode region. A mounting support on the diode region, opposite the substrate is configured to support the diode region, such that the light that is emitted from the diode region into the substrate, is emitted from the first face upon application of voltage across the diode region. A reflector is provided between the mounting support and the diode region, that is configured to reflect light that is emitted from the diode region back into the diode region, through the substrate that is transparent to optical radiation in the predetermined wavelength range and from the plurality of pedestals, upon application of voltage across the diode region. A layer of Indium Tin Oxide (ITO) is provided between the reflector and the diode region.

    摘要翻译： 发光二极管包括具有第一和第二相对面并且对于预定波长范围内的光辐射透明的衬底，其被图案化以在横截面中限定多个基座，其从第一面朝向 第二张脸。 第二面上的二极管区域被配置为在施加二极管区域上的电压时将预定波长范围内的光发射到衬底中。 配置在与衬底相对的二极管区域上的安装支撑件被配置为支撑二极管区域，使得从二极管区域发射到衬底中的光在施加二极管区域上的电压时从第一面发射。 在安装支撑件和二极管区域之间设置反射器，其被配置为将从二极管区域发射的光反射回二极管区域，穿过对于预定波长范围内的光辐射透明的基板和从多个 在二极管区域施加电压时， 在反射器和二极管区域之间设置一层氧化铟锡（ITO）。

    Method and apparatus for preventing loss of service from hardware failure in a network
    14.
    发明申请
    Method and apparatus for preventing loss of service from hardware failure in a network 有权
    防止网络中硬件故障的服务丢失的方法和装置

    公开(公告)号：US20070076789A1

    公开(公告)日：2007-04-05

    申请号：US11240114

    申请日：2005-09-30

    申请人： Brian Thibeault

    发明人： Brian Thibeault

    IPC分类号： H04L5/16

    CPC分类号： G06F11/2005

    摘要： A spare receiver in a CMTS is used to prevent loss of service to subscribers during a failure of a receiver. The beginning of a mass modem de-registration event is detected by the operator or automatically by the CMTS. Upon detection of the beginning of the mass modem de-registration event, the spare receiver matrices to the troubled receiver and is configured according the communication parameters of the troubled receiver. The spare receiver sends communications to one or modems normally registered with the troubled receiver to determine if the mass de-registration event is the result of a failed receiver or a connection problem. In the event of a failed receiver, the spare receiver stays matriced with the troubled receiver and passes communications to/from from modems normally registered with it. The cable operator may swap out the troubled receiver and repair the system without significant loss of service to the subscribers.

    摘要翻译： CMTS中的备用接收机用于在接收机发生故障时防止用户丢失服务。 大容量调制解调器取消注册事件的开始由操作者检测到或由CMTS自动检测。 在检测到大容量调制解调器去注册事件的开始时，备用接收机矩阵到陷入困扰的接收机，并根据故障接收机的通信参数进行配置。 备用接收机向通常在故障接收器中注册的一个或调制解调器发送通信，以确定质量去注册事件是否是接收机故障或连接问题的结果。 在接收机发生故障的情况下，备用接收机保持与故障接收机的分配，并将通信与通常注册的调制解调器进行通信。 有线电视运营商可以调换故障的接收机并修复系统，而不会对用户造成重大的服务丢失。

    Fabrication of semiconductor materials and devices with controlled electrical conductivity
    15.
    发明授权
    Fabrication of semiconductor materials and devices with controlled electrical conductivity 有权

    公开(公告)号：US06620709B2

    公开(公告)日：2003-09-16

    申请号：US10133530

    申请日：2002-04-11

    申请人： David Kapolnek ,  Brian Thibeault

    发明人： David Kapolnek ,  Brian Thibeault

    IPC分类号： H01L2131

    CPC分类号： H01L33/325 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/3228 ,  H01L33/44

    摘要： A method for protecting the surface of a semiconductor material from damage and dopant passivation is described. A barrier layer of dense or reactive material is deposited on the semiconductor material shortly after growth in a growth reactor such as a MOCVD reactor, using the MOCVD source gasses. The barrier layer blocks the diffusion of hydrogen into the material. The reactor can then be cooled in a reactive or non-reactive gas ambience. The semiconductor material can then be removed from the reactor with little or no passivation of the dopant species. The barrier layer can be removed using a variety of etching processes, including wet chemical etching or can be left at the semiconductor material for surface protection. The barrier layer can also be a gettering layer that chemically binds hydrogen trapped in the semiconductor material and/or blocks hydrogen diffusion into the material.

    Method and apparatus for testing a network using a spare receiver
    17.
    发明申请
    Method and apparatus for testing a network using a spare receiver 审中-公开
    使用备用接收机测试网络的方法和装置

    公开(公告)号：US20070076790A1

    公开(公告)日：2007-04-05

    申请号：US11240296

    申请日：2005-09-30

    申请人： Brian Thibeault ,  Poth Boontor ,  Ching-Ho Cheng ,  Thomas Keske ,  Veronica Lobo

    发明人： Brian Thibeault ,  Poth Boontor ,  Ching-Ho Cheng ,  Thomas Keske ,  Veronica Lobo

    IPC分类号： H04L5/16 ,  H04B17/00

    CPC分类号： H04L1/24 ,  H04B17/16

    摘要： A spare receiver in a CMTS is used to non-invasively test the upstream signal quality of a network without disrupting a subscriber's operations. A modem registered with a receiver on the network is selected as a testing modem. The spare receiver is RF connected to the receiver and the testing modem is tuned to the spare receiver. The testing modem is used to test the signal quality of the network, such as by using a SNR test. The testing modem remains registered with the network during the testing operation. Other modems are prevented from registering with the spare receiver. If other modems attempt to register on the spare receiver, the system overrides their attempts and moves them back to another receiver. The testing modem is returned to its original receiver when testing is completed.

    摘要翻译： CMTS中的备用接收器用于非侵入式地测试网络的上行信号质量，而不会中断用户的操作。 在网络上接收器注册的调制解调器被选为测试调制解调器。 备用接收机RF连接到接收机，测试调制解调器被调谐到备用接收机。 测试调制解调器用于测试网络的信号质量，例如通过使用SNR测试。 测试调制解调器在测试操作期间保持与网络注册。 防止其他调制解调器向备用接收机注册。 如果其他调制解调器尝试在备用接收机上注册，系统会覆盖其尝试并将其移回另一个接收器。 当测试完成时，测试调制解调器返回到其原始接收器。

    Multi element, multi color solid state LED/laser
    18.
    发明授权
    Multi element, multi color solid state LED/laser 有权
    多元素，多色固态LED /激光

    公开(公告)号：US07084436B2

    公开(公告)日：2006-08-01

    申请号：US10815426

    申请日：2004-03-31

    申请人： Steven P. DenBaars ,  Eric J. Tarsa ,  Michael Mack ,  Bernd Keller ,  Brian Thibeault

    发明人： Steven P. DenBaars ,  Eric J. Tarsa ,  Michael Mack ,  Bernd Keller ,  Brian Thibeault

    IPC分类号： H01L33/00

    CPC分类号： H01L33/30 ,  H01L25/0756 ,  H01L27/15 ,  H01L27/153 ,  H01L33/08 ,  H01L33/343 ,  H01L33/502 ,  H01L33/504 ,  H01L2924/0002 ,  H01S3/0627 ,  H01S3/0941 ,  H01S3/09415 ,  H01S3/1623 ,  H01S3/1628 ,  H01S5/0206 ,  H01S5/0287 ,  H01S5/1032 ,  H01S5/183 ,  H01S5/18361 ,  H01S5/32341 ,  H01L2924/00

    摘要： A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green and blue and UV light, such that the LED emits green, blue, red light and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state laser having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth or transition elements.

    摘要翻译： 在掺杂有一种或多种稀土或过渡元素的衬底上生长的发光二极管（LED）。 掺杂剂离子吸收来自LED有源层的一些或全部光，将掺杂剂离子上的电子泵送到更高的能量状态。 电子被自然地吸收到它们的平衡状态，并且它们以取决于掺杂剂离子的类型的波长发光。 本发明特别适用于发射紫外光并在掺杂有铬的蓝宝石衬底上生长的基于氮化物的LED。 铬离子吸收紫外光，激发离子上的电子到更高的能量状态。 当它们回到它们的平衡状态时，它们发出红光，并且一些红光将从LED的表面发射。 LED还可以具有发射绿色和蓝色和紫外线的有源层，使得LED发出绿色，蓝色，红色光和UV光，其组合以产生白光。 或者，它可以具有一个活性层并在掺杂有Cr，Ti和Co的蓝宝石衬底上生长，使得衬底吸收UV光并发出蓝色，绿色和红色光。 本发明还能够在各种色调上提供可调LED。 本发明也适用于具有一个或多个发射紫外光的有源层的固体激光器，其中激光生长在掺杂有一种或多种稀土或过渡元素的蓝宝石衬底上。

    Enhanced light extraction in LEDs through the use of internal and external optical elements
    19.
    发明授权
    Enhanced light extraction in LEDs through the use of internal and external optical elements 有权
    通过使用内部和外部光学元件在LED中增强光提取

    公开(公告)号：US06657236B1

    公开(公告)日：2003-12-02

    申请号：US09727803

    申请日：2000-11-28

    申请人： Brian Thibeault ,  Michael Mack ,  Steven DenBaars

    发明人： Brian Thibeault ,  Michael Mack ,  Steven DenBaars

    IPC分类号： H01L3300

    CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/44 ,  H01L2933/0091 ,  Y10S977/712 ,  Y10S977/834

    摘要： This invention describes new LEDs having light extraction structures on or within the LED to increase its efficiency. The new light extraction structures provide surfaces for reflecting, refracting or scattering light into directions that are more favorable for the light to escape into the package. The structures can be arrays of light extraction elements or disperser layers. The light extraction elements can have many different shapes and are placed in many locations to increase the efficiency of the LED over conventional LEDs. The disperser layers provide scattering centers for light and can be placed in many locations as well. The new LEDs with arrays of light extraction elements are fabricated with standard processing techniques making them highly manufacturable at costs similar to standard LEDs. The new LEDs with disperser layers are manufactured using new methods and are also highly manufacturable.

    摘要翻译： 本发明描述了在LED上或LED内部具有光提取结构以提高其效率的新型LED。 新的光提取结构提供用于将光反射，折射或散射到更有利于光逃逸到包装中的方向的表面。 该结构可以是光提取元件或分散层的阵列。 光提取元件可以具有许多不同的形状并且被放置在许多位置以提高LED相对于常规LED的效率。 分散层提供光的散射中心，并且也可以放置在许多位置。 具有光提取元件阵列的新型LED采用标准处理技术制造，使得它们以与标准LED相似的成本高度可制造。 具有分散层的新型LED使用新的方法制造，并且也是高度可制造的。

    Fabrication of semiconductor materials and devices with controlled electrical conductivity
    20.
    发明授权
    Fabrication of semiconductor materials and devices with controlled electrical conductivity 有权
    具有受控导电性的半导体材料和器件的制造

    公开(公告)号：US06498111B1

    公开(公告)日：2002-12-24

    申请号：US09644875

    申请日：2000-08-23

    申请人： David Kapolnek ,  Brian Thibeault

    发明人： David Kapolnek ,  Brian Thibeault

    IPC分类号： H01L2131

    CPC分类号： H01L33/325 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/3228 ,  H01L33/44

    摘要： A method for protecting the surface of a semiconductor material from damage and dopant passivation is described. A barrier layer of dense or reactive material is deposited on the semiconductor material shortly after growth in a growth reactor such as a MOCVD reactor, using the MOCVD source gasses. The barrier layer blocks the diffusion of hydrogen into the material. The reactor can then be cooled in a reactive or non-reactive gas ambience. The semiconductor material can then be removed from the reactor with little or no passivation of the dopant species. The barrier layer can be removed using a variety of etching processes, including wet chemical etching or can be left at the semiconductor material for surface protection. The barrier layer can also be a gettering layer that chemically binds hydrogen trapped in the semiconductor material and/or blocks hydrogen diffusion into the material.

    摘要翻译： 描述了一种用于保护半导体材料的表面免受损坏和掺杂剂钝化的方法。 在使用MOCVD源气体的生长反应器如MOCVD反应器中生长后不久，在半导体材料上沉积密集或反应性材料的阻挡层。 阻挡层阻止氢扩散到材料中。 然后可以在反应性或非反应性气体环境中冷却反应器。 然后可以很少或没有掺杂剂物质的钝化从反应器中除去半导体材料。 可以使用各种蚀刻工艺（包括湿化学蚀刻）去除阻挡层，或者可以将其留在用于表面保护的半导体材料上。 阻挡层也可以是化学地结合捕获在半导体材料中的氢和/或阻止扩散到材料中的氢的吸气层。