摘要:
To provide a method for forming electrodes and/or black stripes for a plasma display substrate, wherein display electrodes, bus electrodes and optionally black stripes for a plasma display panel are formed of the same material by the same dry step, whereby a clear image having reflection prevented, can be displayed on a PDP display device with a low load on the environment, at low costs, with low resistance, without erosion by a dielectric.A method for forming electrodes and/or black stripes for a plasma display substrate, which comprises applying a laser beam to a mask layer formed on a transparent substrate to form openings at areas corresponding to the respective patterns of display electrodes, bus electrodes and optionally black stripes, then continuously forming an antireflection layer to provide an antireflection effect over the entire surface and an electrode layer, and applying again a laser beam to peel off the mask layer and at the same time to remove an unnecessary thin film layer.
摘要:
A transparent conductive film having a transparent oxide layer and a metal layer containing Ag, laminated in this order from a substrate side in a total of (2n+1) layers), wherein n is an integer of at least 1, wherein the transparent oxide layer contains ZnO and further contains In within a range of from 9 to 98 atomic % based on the sum of Zn and In, and a process for forming a transparent electrode.
摘要:
A transparent conductive film having a transparent oxide layer and a metal layer containing Ag, laminated in this order from a substrate side in a total of (2n+l) layers), wherein n is an integer of at least 1, wherein the transparent oxide layer contains ZnO and further contains In within a range of from 9 to 98 atomic % based on the sum of Zn and In, and a process for forming a transparent electrode.
摘要:
To provide a glass substrate with protective glass which suppresses formation of microscopic scratches on the back surface of the glass substrate in the production process for a display device, and which prevents a strength decrease in the process or formation of etch pits after a chemical etching treatment; a process for producing a display device by using the glass substrate with protective glass; and a double-sided removable resin sheet for the glass substrate with protective glass.A glass substrate with protective glass, which comprises a glass substrate and a protective glass plate laminated on each other, and which is characterized in that the glass substrate and the protective glass plate are laminated by a double-sided removal resin sheet.
摘要:
The present invention provides a mask blank which comprises a substrate made of a synthetic quartz glass and a light-shielding film laminated on a surface of the substrate and is for use in a semiconductor device production technique employing an exposure light wavelength of 200 nm or shorter, wherein the mask blank has a birefringence, as measured at a wavelength of 193 nm, of 1 nm or less per substrate thickness. According to the present invention, mask blanks suitable for use in the immersion exposure technique and the polarized illumination technique are provided.
摘要:
A conventional light diffusion plate provided in a direct type backlight unit to be employed for e.g. a liquid crystal display, has problems in that it does not have a sufficient diffusion performance, it is difficult to increase the size, and it is difficult to produce such a light diffusion plate at low cost.A light diffusion plate comprising a glass substrate and a light diffusion layer formed on the glass substrate, wherein the light diffusion layer comprises a matrix and a light diffusion agent, the absolute value Δn of the refractive index difference between the matrix and the light diffusion agent is 0.05 or more and less than 0.5, and the volume ratio of the light diffusion agent in the light diffusion layer is 30% or more.
摘要:
A reflective-type mask blank for EUV lithography for reducing the EUV ray reflectance at the absorbing layer and a method for producing the mask blank are presented. A reflective-type mask blank for EUV lithography comprising a substrate and a reflective layer for reflecting EUV light and an absorbing layer for absorbing EUV light, which are formed on the substrate in this order, the reflective-type mask blank for EUV lithography being characterized in that the absorbing layer is a Cr layer of low EUV ray reflectance deposited by an ion beam sputtering method.
摘要:
An antireflection substrate comprising a substrate which is transparent to ultraviolet and vacuum ultraviolet rays in the wavelength region from 155 nm to 200 nm and a mono-, bi- or tri-layer antireflection film formed on at least one side of the substrate, wherein the refractive index and the physical thickness of the antireflection film at the center wavelength &lgr;0 of the wavelength region of ultraviolet or vacuum ultraviolet light which needs antireflection satisfy particular conditions, and an optical component for a semiconductor manufacturing apparatus and a substrate for a low-reflection pellicle which is the ultraviolet and vacuum ultraviolet antireflection substrate.
摘要:
An antireflection substrate comprising a substrate which is transparent to ultraviolet and vacuum ultraviolet rays in the wavelength region from 155 nm to 200 nm and a mono-, bi- or tri-layer antireflection film formed on at least one side of the substrate, wherein the refractive index and the physical thickness of the antireflection film at the center wavelength &lgr;0 of the wavelength region of ultraviolet or vacuum ultraviolet light which needs antireflection satisfy particular conditions, and an optical component for a semiconductor manufacturing apparatus and a substrate for a low-reflection pellicle which is the ultraviolet and vacuum ultraviolet antireflection substrate
摘要:
The present invention provides a mask blank which comprises a substrate made of a synthetic quartz glass and a light-shielding film laminated on a surface of the substrate and is for use in a semiconductor device production technique employing an exposure light wavelength of 200 nm or shorter, wherein the mask blank has a birefringence, as measured at a wavelength of 193 nm, of 1 nm or less per substrate thickness. According to the present invention, mask blanks suitable for use in the immersion exposure technique and the polarized illumination technique are provided.