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公开(公告)号：US10126653B2
公开(公告)日：2018-11-13
申请号：US13580921
申请日：2011-02-24
申请人： Kaoru Iwato , Shohei Kataoka , Shinji Tarutani , Sou Kamimura , Keita Kato , Yuichiro Enomoto , Kazuyoshi Mizutani , Toru Tsuchihashi , Kana Fujii
发明人： Kaoru Iwato , Shohei Kataoka , Shinji Tarutani , Sou Kamimura , Keita Kato , Yuichiro Enomoto , Kazuyoshi Mizutani , Toru Tsuchihashi , Kana Fujii
IPC分类号： G03F7/30 , G03F7/004 , G03F7/38 , G03F7/075 , G03F7/038 , G03F7/039 , G03F7/11 , G03F7/20 , G03F7/32
摘要： Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.
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公开(公告)号：US08785104B2
公开(公告)日：2014-07-22
申请号：US12921354
申请日：2009-03-13
CPC分类号： G03F7/0045 , C08F8/12 , C08F12/24 , C09D125/14 , G03F7/0046 , G03F7/0392 , G03F7/0397 , C08F212/14 , C08F2220/1825
摘要： A resist composition and a pattern forming method using the composition are provided, the resist composition including: (A) a resin that decomposes by an action of an acid to increase a solubility of the resin (A) in an alkali developer; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a compound represented by formula (C1); and (D) a solvent: wherein n represents an integer of 1 to 6; w represents an integer of 1 to 6; p represents an integer of 1 to 6; m represents an integer of 1 to 6; Ra, Rb, Rc and Rd each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group, provided that Ra and Rb may combine together to form a ring, and Rc and Rd may combine together to form a ring.
摘要翻译： 提供了使用该组合物的抗蚀剂组合物和图案形成方法，该抗蚀剂组合物包括：（A）通过酸的作用分解以提高树脂（A）在碱性显影剂中的溶解度的树脂; （B）能够在用光化射线或辐射照射时能够产生酸的化合物; （C）由式（C1）表示的化合物; 和（D）溶剂：其中n表示1至6的整数; w表示1〜6的整数， p表示1〜6的整数， m表示1〜6的整数， Ra，Rb，Rc和Rd各自独立地表示氢原子，烷基，环烷基，芳基或芳烷基，条件是Ra和Rb可以结合在一起形成环，Rc和Rd可以结合在一起 形成一个戒指。
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公开(公告)号：US20110014570A1
公开(公告)日：2011-01-20
申请号：US12921354
申请日：2009-03-13
CPC分类号： G03F7/0045 , C08F8/12 , C08F12/24 , C09D125/14 , G03F7/0046 , G03F7/0392 , G03F7/0397 , C08F212/14 , C08F2220/1825
摘要： A resist composition and a pattern forming method using the composition are provided, the resist composition including: (A) a resin that decomposes by an action of an acid to increase a solubility of the resin (A) in an alkali developer; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a compound represented by formula (C1); and (D) a solvent: wherein n represents an integer of 1 to 6; w represents an integer of 1 to 6; p represents an integer of 1 to 6; m represents an integer of 1 to 6; Ra, Rb, Rc and Rd each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group, provided that Ra and Rb may combine together to form a ring, and Rc and Rd may combine together to form a ring.
摘要翻译： 提供了使用该组合物的抗蚀剂组合物和图案形成方法，该抗蚀剂组合物包括：（A）通过酸的作用分解以提高树脂（A）在碱性显影剂中的溶解度的树脂; （B）能够在用光化射线或辐射照射时能够产生酸的化合物; （C）由式（C1）表示的化合物; 和（D）溶剂：其中n表示1至6的整数; w表示1〜6的整数， p表示1〜6的整数， m表示1〜6的整数， Ra，Rb，Rc和Rd各自独立地表示氢原子，烷基，环烷基，芳基或芳烷基，条件是Ra和Rb可以结合在一起形成环，Rc和Rd可以结合在一起 形成一个戒指。
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14.发明授权公开(公告)号：US07592118B2
公开(公告)日：2009-09-22
申请号：US12053675
申请日：2008-03-24
CPC分类号： G03F7/0392 , G03F7/091 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition, includes: (B) a resin containing a repeating unit represented by formula (Ia) or (Ib) as defined in the specification, which decomposes under an action of an acid to increase a solubility of the resin (B) in an aqueous alkali solution; and (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and a pattern forming method uses the composition.
摘要翻译： 正型抗蚀剂组合物包括：（B）含有本说明书中定义的由式（Ia）或（Ib）表示的重复单元的树脂，其在酸的作用下分解以增加树脂（B）的溶解度， 在碱性水溶液中; 和（A）能够在用光化射线或辐射照射时能够产生酸的化合物，并且图案形成方法使用该组合物。
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公开(公告)号：US20080241743A1
公开(公告)日：2008-10-02
申请号：US12053675
申请日：2008-03-24
CPC分类号： G03F7/0392 , G03F7/091 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition, includes: (B) a resin containing a repeating unit represented by formula (Ia) or (Ib) as defined in the specification, which decomposes under an action of an acid to increase a solubility of the resin (B) in an aqueous alkali solution; and (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and a pattern forming method uses the composition.
摘要翻译： 正型抗蚀剂组合物包括：（B）含有本说明书中定义的由式（Ia）或（Ib）表示的重复单元的树脂，其在酸的作用下分解以增加树脂（B）的溶解度， 在碱性水溶液中; 和（A）能够在用光化射线或辐射照射时能够产生酸的化合物，并且图案形成方法使用该组合物。
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公开(公告)号：US08084187B2
公开(公告)日：2011-12-27
申请号：US12410829
申请日：2009-03-25
CPC分类号： G03F7/0392 , G03F7/0397 , Y10S430/113 , Y10S430/114
摘要： Provided is a resist composition including a compound having a molecular weight of 1,000 or less and containing at least one sulfonamide group (—SO2NH—).
摘要翻译： 提供了含有分子量为1000以下且含有至少一个磺酰胺基（-SO 2 NH-）的化合物的抗蚀剂组合物。
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17.发明授权公开(公告)号：US07625690B2
公开(公告)日：2009-12-01
申请号：US11717618
申请日：2007-03-14
CPC分类号： G03F7/0392 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation: wherein AR represents an aryl group; Rn represents an alkyl group, a cycloalkyl group or an aryl group; and A represents an atom or group selected from the group consisting of a hydrogen atom, an alkyl group, a halogen atom, a cyano group and an alkyloxycarbonyl group, and a pattern forming method using the resist composition.
摘要翻译： 一种抗蚀剂组合物，其包含：（A）含有由式（I）表示的重复单元的树脂; 和（B）能够在用光化射线或辐射照射时能够产生酸的化合物：其中AR表示芳基; Rn表示烷基，环烷基或芳基; A表示选自氢原子，烷基，卤素原子，氰基和烷氧基羰基的原子或基团，以及使用该抗蚀剂组合物的图案形成方法。
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公开(公告)号：US20090253070A1
公开(公告)日：2009-10-08
申请号：US12410829
申请日：2009-03-25
CPC分类号： G03F7/0392 , G03F7/0397 , Y10S430/113 , Y10S430/114
摘要： Provided is a resist composition including a compound having a molecular weight of 1,000 or less and containing at least one sulfonamide group (—SO2NH—).
摘要翻译： 提供了含有分子量为1000以下且含有至少一个磺酰胺基（-SO 2 NH-）的化合物的抗蚀剂组合物。
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19.发明申请公开(公告)号：US20070218406A1
公开(公告)日：2007-09-20
申请号：US11717618
申请日：2007-03-14
IPC分类号： G03C1/00
CPC分类号： G03F7/0392 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation: wherein AR represents an aryl group; Rn represents an alkyl group, a cycloalkyl group or an aryl group; and A represents an atom or group selected from the group consisting of a hydrogen atom, an alkyl group, a halogen atom, a cyano group and an alkyloxycarbonyl group, and a pattern forming method using the resist composition.
摘要翻译： 一种抗蚀剂组合物，其包含：（A）含有由式（I）表示的重复单元的树脂; 和（B）能够在用光化射线或辐射照射时能够产生酸的化合物：其中AR表示芳基; Rn表示烷基，环烷基或芳基; A表示选自氢原子，烷基，卤素原子，氰基和烷氧基羰基的原子或基团，以及使用该抗蚀剂组合物的图案形成方法。
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20.发明授权Positive resist composition with (bis-tri fluoromethyl) methyl substituted styrene 有权（双 - 三氟甲基）甲基取代苯乙烯的正性抗蚀剂组合物公开(公告)号：US06743565B2
公开(公告)日：2004-06-01
申请号：US10156227
申请日：2002-05-29
IPC分类号： G03F7039
CPC分类号： G03F7/0046 , G03F7/0392 , Y10S430/108 , Y10S430/115
摘要： A positive resist composition is disclosed, comprising (A) a resin containing at least one repeating unit represented by the following formula (I) and at least one repeating unit represented by formula (VII), which decomposes under the action of an acid to increase the solubility in an alkali developer, and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation.
摘要翻译： 公开了一种正型抗蚀剂组合物，其包含（A）含有至少一个由下式（I）表示的重复单元的树脂和至少一种由式（VII）表示的重复单元，其在酸的作用下分解以增加 在碱性显影剂中的溶解度，和（B）在用光化射线或辐射照射时能够产生酸的化合物。
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