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1.发明授权公开(公告)号：US07923196B2
公开(公告)日：2011-04-12
申请号：US12672329
申请日：2008-08-01
CPC分类号： G03F7/0397 , C08F8/12 , C08F12/22 , C08F12/24 , C08F212/14 , C08F2800/10 , G03F7/0045 , G03F7/0392 , Y10S430/114 , Y10S430/146 , C08F220/18 , C08F2220/1825 , C08F220/14
摘要： A positive resist composition comprising (A) a resin which contains all of the repeating units represented by formulae (I) to (III), and becomes soluble in an alkali developer by the action of an acid, and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and a pattern forming method using the composition. A represents a group capable of decomposing and leaving by the action of an acid, each R1 independently represents hydrogen or a methyl group, R2 represents a phenyl group or a cyclohexyl group, m represents 1 or 2, and n represents an integer of 0 to 2. By virtue of this construction, a resist composition ensuring high resolution, good pattern profile, sufficient depth of focus, little defects after development, and sufficiently high plasma etching resistance is provided.
摘要翻译： 一种正型抗蚀剂组合物，其包含（A）含有由式（I）至（III）表示的所有重复单元的树脂，并且通过酸的作用变得可溶于碱性显影剂，和（B）能够 在用光化射线或辐射照射时产生酸; 以及使用该组合物的图案形成方法。 A表示能够通过酸的分解和离去的基团，每个R 1独立地表示氢或甲基，R 2表示苯基或环己基，m表示1或2，n表示0〜 通过这种结构，提供了确保高分辨率，良好的图案轮廓，足够的焦深，显影后的小缺陷以及足够高的耐等离子体耐蚀刻性的抗蚀剂组合物。
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2.发明申请ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME 有权丙酰胺或辐射敏感性树脂组合物及其形成图案的方法公开(公告)号：US20130017377A1
公开(公告)日：2013-01-17
申请号：US13637269
申请日：2011-03-25
申请人： Shohei Kataoka , Kaoru Iwato , Sou Kamimura , Toru Tsuchihashi , Yuichiro Enomoto , Kana Fujii , Kazuyoshi Mizutani , Shinji Tarutani , Keita Kato
发明人： Shohei Kataoka , Kaoru Iwato , Sou Kamimura , Toru Tsuchihashi , Yuichiro Enomoto , Kana Fujii , Kazuyoshi Mizutani , Shinji Tarutani , Keita Kato
CPC分类号： G03F7/30 , C08F220/28 , C08F232/08 , G03F7/0045 , G03F7/0382 , G03F7/039 , G03F7/0397 , G03F7/0758 , G03F7/2041 , G03F7/325 , Y10T428/24802
摘要： Provided is an actinic-ray- or radiation-sensitive resin composition and a method of forming a pattern using the same, ensuring excellent the etching resistivity and the stability during a post-exposure delay (PED) period. The composition contains a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, and a compound that generates an acid of pKa≧1.5 when exposed to actinic rays or radiation.
摘要翻译： 提供了一种光化射线或辐射敏感性树脂组合物和使用其形成图案的方法，确保了在曝光后延迟（PED）期间的蚀刻电阻率和稳定性优异。 该组合物含有含有重复单元的树脂，该重复单元含有当被酸作用时分解的基团，从而产生醇羟基，以及当暴露于光化射线或辐射时产生pKa≥1.5的酸的化合物。
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公开(公告)号：US08084187B2
公开(公告)日：2011-12-27
申请号：US12410829
申请日：2009-03-25
CPC分类号： G03F7/0392 , G03F7/0397 , Y10S430/113 , Y10S430/114
摘要： Provided is a resist composition including a compound having a molecular weight of 1,000 or less and containing at least one sulfonamide group (—SO2NH—).
摘要翻译： 提供了含有分子量为1000以下且含有至少一个磺酰胺基（-SO 2 NH-）的化合物的抗蚀剂组合物。
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公开(公告)号：US20120321855A1
公开(公告)日：2012-12-20
申请号：US13580921
申请日：2011-02-24
申请人： Kaoru Iwato , Shohei Kataoka , Shinji Tarutani , Sou Kamimura , Keita Kato , Yuichiro Enomoto , Kazuyoshi Mizutani , Toru Tsuchihashi , Kana Fujii
发明人： Kaoru Iwato , Shohei Kataoka , Shinji Tarutani , Sou Kamimura , Keita Kato , Yuichiro Enomoto , Kazuyoshi Mizutani , Toru Tsuchihashi , Kana Fujii
IPC分类号： G03F7/027 , B32B3/30 , G03F7/004 , G03F7/20 , C08F224/00
CPC分类号： G03F7/30 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/0757 , G03F7/0758 , G03F7/11 , G03F7/2041 , G03F7/325 , G03F7/38 , Y10T428/24479
摘要： Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.
摘要翻译： 提供了形成图案的方法，确保优异的灵敏度，限制分辨率，粗糙度特性，曝光宽容度（EL），对曝光后烘烤（PEB）温度和聚焦宽度（焦深DOF）的依赖性以及抗蚀剂组合物 用于该方法。 该方法包括（A）由抗蚀剂组合物形成膜，所述抗蚀剂组合物含有含有重复单元的树脂，所述树脂含有当被酸作用时分解的基团，从而产生醇羟基，所述树脂当被酸作用时降低 其在含有有机溶剂的显影剂中的溶解度，（B）将膜曝光，和（C）使用含有有机溶剂的显影剂显影曝光膜。
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5.发明申请公开(公告)号：US20110081612A1
公开(公告)日：2011-04-07
申请号：US12895504
申请日：2010-09-30
申请人： Kana FUJII , Takamitsu Tomiga , Toru Tsuchihashi , Kazuyoshi Mizutani , Jiro Yokoyama , Shinichi Sugiyama , Shuji Hirano , Toru Fujimori
发明人： Kana FUJII , Takamitsu Tomiga , Toru Tsuchihashi , Kazuyoshi Mizutani , Jiro Yokoyama , Shinichi Sugiyama , Shuji Hirano , Toru Fujimori
CPC分类号： G03F7/0392 , C08F8/12 , C08F12/22 , C08F214/18 , C08F220/18 , C08F220/22 , C08F220/32 , C08F2220/282 , C08K5/375 , C08K5/42 , C08L33/068 , C08L51/04 , C08L67/02 , C09D125/14 , C09D125/18 , G03F7/0045 , G03F7/0046 , C08F212/14 , C08F2220/1825 , C08F2220/185 , C08F220/14
摘要： According to one embodiment, an actinic ray-sensitive or radiation-sensitive resin composition includes (A) a resin containing the repeating units of formulae (I), (II) and (III) that when acted on by an acid, becomes soluble in an alkali developer, and (B) a compound that when irradiated with actinic rays or radiation, generates a fluorine-containing acid, wherein each of R1 independently represents a hydrogen atom or an optionally substituted methyl group, R2 represents a halogen atom, an optionally substituted alkyl group, an optionally substituted cycloalkyl group, an optionally substituted aryl group or an optionally substituted aralkyl group, and n is an integer of 0 to 5, provided that when n is 2 or greater, multiple R2s may be identical to or different from each other.
摘要翻译： 根据一个实施方案，光化射线敏感或辐射敏感性树脂组合物包含（A）含有式（I），（II）和（III）的重复单元的树脂，当被酸作用时，其变得易溶于 碱显影剂和（B）当用光化射线或辐射照射时产生含氟酸的化合物，其中R 1各自独立地表示氢原子或任选取代的甲基，R 2表示卤素原子，任选地 取代的烷基，任选取代的环烷基，任选取代的芳基或任选取代的芳烷基，n为0至5的整数，条件是当n为2或更大时，多个R 2可以相同或不同 彼此。
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6.发明授权公开(公告)号：US07625690B2
公开(公告)日：2009-12-01
申请号：US11717618
申请日：2007-03-14
CPC分类号： G03F7/0392 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation: wherein AR represents an aryl group; Rn represents an alkyl group, a cycloalkyl group or an aryl group; and A represents an atom or group selected from the group consisting of a hydrogen atom, an alkyl group, a halogen atom, a cyano group and an alkyloxycarbonyl group, and a pattern forming method using the resist composition.
摘要翻译： 一种抗蚀剂组合物，其包含：（A）含有由式（I）表示的重复单元的树脂; 和（B）能够在用光化射线或辐射照射时能够产生酸的化合物：其中AR表示芳基; Rn表示烷基，环烷基或芳基; A表示选自氢原子，烷基，卤素原子，氰基和烷氧基羰基的原子或基团，以及使用该抗蚀剂组合物的图案形成方法。
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公开(公告)号：US10126653B2
公开(公告)日：2018-11-13
申请号：US13580921
申请日：2011-02-24
申请人： Kaoru Iwato , Shohei Kataoka , Shinji Tarutani , Sou Kamimura , Keita Kato , Yuichiro Enomoto , Kazuyoshi Mizutani , Toru Tsuchihashi , Kana Fujii
发明人： Kaoru Iwato , Shohei Kataoka , Shinji Tarutani , Sou Kamimura , Keita Kato , Yuichiro Enomoto , Kazuyoshi Mizutani , Toru Tsuchihashi , Kana Fujii
IPC分类号： G03F7/30 , G03F7/004 , G03F7/38 , G03F7/075 , G03F7/038 , G03F7/039 , G03F7/11 , G03F7/20 , G03F7/32
摘要： Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.
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8.发明授权Actinic ray-sensitive or radiation-sensitive resin composition and method of forming pattern therewith 有权光化射线敏感或辐射敏感性树脂组合物及其形成图案的方法公开(公告)号：US08349535B2
公开(公告)日：2013-01-08
申请号：US12895504
申请日：2010-09-30
申请人： Kana Fujii , Takamitsu Tomiga , Toru Tsuchihashi , Kazuyoshi Mizutani , Jiro Yokoyama , Shinichi Sugiyama , Shuji Hirano , Toru Fujimori
发明人： Kana Fujii , Takamitsu Tomiga , Toru Tsuchihashi , Kazuyoshi Mizutani , Jiro Yokoyama , Shinichi Sugiyama , Shuji Hirano , Toru Fujimori
CPC分类号： G03F7/0392 , C08F8/12 , C08F12/22 , C08F214/18 , C08F220/18 , C08F220/22 , C08F220/32 , C08F2220/282 , C08K5/375 , C08K5/42 , C08L33/068 , C08L51/04 , C08L67/02 , C09D125/14 , C09D125/18 , G03F7/0045 , G03F7/0046 , C08F212/14 , C08F2220/1825 , C08F2220/185 , C08F220/14
摘要： According to one embodiment, an actinic ray-sensitive or radiation-sensitive resin composition includes (A) a resin containing the repeating units of formulae (I), (II) and (III) that when acted on by an acid, becomes soluble in an alkali developer, and (B) a compound that when irradiated with actinic rays or radiation, generates a fluorine-containing acid, wherein each of R1 independently represents a hydrogen atom or an optionally substituted methyl group, R2 represents a halogen atom, an optionally substituted alkyl group, an optionally substituted cycloalkyl group, an optionally substituted aryl group or an optionally substituted aralkyl group, and n is an integer of 0 to 5, provided that when n is 2 or greater, multiple R2s may be identical to or different from each other.
摘要翻译： 根据一个实施方案，光化射线敏感或辐射敏感性树脂组合物包含（A）含有式（I），（II）和（III）的重复单元的树脂，当被酸作用时，其变得可溶于 碱显影剂和（B）当用光化射线或辐射照射时产生含氟酸的化合物，其中R 1各自独立地表示氢原子或任选取代的甲基，R 2表示卤素原子，任选地 取代的烷基，任选取代的环烷基，任选取代的芳基或任选取代的芳烷基，n为0至5的整数，条件是当n为2或更大时，多个R 2可以相同或不同 彼此。
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公开(公告)号：US20090253070A1
公开(公告)日：2009-10-08
申请号：US12410829
申请日：2009-03-25
CPC分类号： G03F7/0392 , G03F7/0397 , Y10S430/113 , Y10S430/114
摘要： Provided is a resist composition including a compound having a molecular weight of 1,000 or less and containing at least one sulfonamide group (—SO2NH—).
摘要翻译： 提供了含有分子量为1000以下且含有至少一个磺酰胺基（-SO 2 NH-）的化合物的抗蚀剂组合物。
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10.发明授权公开(公告)号：US09709892B2
公开(公告)日：2017-07-18
申请号：US13637269
申请日：2011-03-25
申请人： Shohei Kataoka , Kaoru Iwato , Sou Kamimura , Toru Tsuchihashi , Yuichiro Enomoto , Kana Fujii , Kazuyoshi Mizutani , Shinji Tarutani , Keita Kato
发明人： Shohei Kataoka , Kaoru Iwato , Sou Kamimura , Toru Tsuchihashi , Yuichiro Enomoto , Kana Fujii , Kazuyoshi Mizutani , Shinji Tarutani , Keita Kato
IPC分类号： G03F7/30 , G03F7/039 , G03F7/075 , C08F220/28 , G03F7/004 , G03F7/20 , G03F7/32 , G03F7/038 , C08F232/08
CPC分类号： G03F7/30 , C08F220/28 , C08F232/08 , G03F7/0045 , G03F7/0382 , G03F7/039 , G03F7/0397 , G03F7/0758 , G03F7/2041 , G03F7/325 , Y10T428/24802
摘要： Provided is an actinic-ray- or radiation-sensitive resin composition and a method of forming a pattern using the same, ensuring excellent the etching resistivity and the stability during a post-exposure delay (PED) period. The composition contains a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, and a compound that generates an acid of pKa≧−1.5 when exposed to actinic rays or radiation.
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