公开(公告)号：US07915145B2

公开(公告)日：2011-03-29

申请号：US12391723

申请日：2009-02-24

申请人： Kazunari Kurita ,  Shuichi Omote

发明人： Kazunari Kurita ,  Shuichi Omote

IPC分类号： H01L21/322

CPC分类号： H01L21/3221 ,  C30B15/00 ,  C30B29/06 ,  H01L21/30625 ,  H01L21/3225 ,  H01L29/7849

摘要： A silicon substrate is manufactured from single-crystal silicon which is grown to have a carbon concentration equal to or higher than 1.0×1016 atoms/cm3 and equal to or lower than 1.6×1017 atoms/cm3 and an initial oxygen concentration equal to or higher than 1.4×1018 atoms/cm3 and equal to or lower than 1.6×1018 atoms/cm3 by a CZ method. A device is formed on a front, the thickness of the silicon substrate is equal to or more than 5 μm and equal to or less than 40 μm, and extrinsic gettering which produces residual stress equal to or more than 5 Mpa and equal to or less than 200 Mpa is applied to a back face of the substrate.

摘要翻译： 硅衬底由生长至碳浓度等于或高于1.0×1016原子/ cm3并且等于或低于1.6×1017原子/ cm3并且初始氧浓度等于或更高的单晶硅制造 通过CZ法为1.4×1018原子/ cm3以上且1.6×1018原子/ cm3以下。 器件形成在前面，硅衬底的厚度等于或大于5μm且等于或小于40μm，产生等于或大于5Mpa且等于或等于或等于5Mpa的残余应力的外部吸气 超过200Mpa被施加到基板的背面。

公开(公告)号：US07621996B2

公开(公告)日：2009-11-24

申请号：US12201345

申请日：2008-08-29

申请人： Kazunari Kurita

发明人： Kazunari Kurita

IPC分类号： C30B15/00

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B33/02

摘要： A method for producing a silicon wafer that has a carbon concentration of 5×1015 to 5×1017 atoms/cm3, interstitial oxygen concentration of 6.5×1017 to 13.5×1017 atoms/cm3, and a resistivity of 100 Ωcm or more.

摘要翻译： 碳浓度为5×10 15〜5×10 17原子/ cm 3，间隙氧浓度为6.5×10 17〜13×10 17原子/ cm 3，电阻率为100Ωm以上的硅晶片的制造方法。

公开(公告)号：US20080006823A1

公开(公告)日：2008-01-10

申请号：US11700492

申请日：2007-01-30

申请人： Kazunari Kurita

发明人： Kazunari Kurita

IPC分类号： H01L29/02

CPC分类号： H01L29/32 ,  H01L21/3225 ,  H01L29/864 ,  H01L29/868

摘要： A high frequency diode comprising: a P type region, a N type region, and an I layer as a high resistivity layer interposed between the P type region and the N type region, wherein the I layer is made of a silicon wafer that has a carbon concentration of 5×1015 to 5×1017 atoms/cm3, interstitial oxygen concentration of 6.5×1017 to 13.5×1017 atoms/cm3, and a resistivity of 100 Ωcm or more.

摘要翻译： 一种高频二极管，包括：P型区域，N型区域和插入在P型区域和N型区域之间的作为高电阻率层的I层，其中I层由具有 碳浓度为5×10 15至5×10 17原子/ cm 3，间隙氧浓度为6.5×10 17至13.5 x 10 17原子/ cm 3，电阻率为100Ωm以上。

公开(公告)号：US07244306B2

公开(公告)日：2007-07-17

申请号：US10531434

申请日：2003-10-17

申请人： Kazunari Kurita ,  Jun Furukawa

发明人： Kazunari Kurita ,  Jun Furukawa

IPC分类号： C30B15/20

CPC分类号： C30B33/00 ,  C04B24/003 ,  C04B28/146 ,  C04B2111/00836 ,  C30B15/00 ,  C30B29/06 ,  Y10T117/1008 ,  C04B22/147 ,  C04B24/04 ,  C04B2103/69

摘要： A single crystal ingot is cut to an axial direction so as to including the central axis, a sample for measurement including regions [V], [Pv], [Pi] and [I] is prepared, and a first sample and second sample are prepared by dividing the sample into two so as to be symmetrical against the central axis. A first transition metal is metal-stained on the surface of the first sample and a second transition metal different from the first transition metal is metal-stained on the surface of the second sample. The first and second samples stained with the metals are thermally treated and the first and second transition metals are diffused into the inside of the samples. Recombination lifetimes in the whole of the first and second samples are respectively measured, and the vertical measurement of the first sample is overlapped on the vertical measurement of the second sample. The boundary between the regions [Pi] and [I] and the boundary between the regions [V] and [Pv] are respectively specified from the overlapped result.

摘要翻译： 将单晶锭切割成包含中心轴的轴向方向，准备包括区域[V]，[Pv]，[Pi]和[I]的测量用样品，第一样品和第二样品为 通过将样品分成两部分以相对于中心轴对称制备。 第一过渡金属在第一样品的表面被金属染色，并且与第一过渡金属不同的第二过渡金属在第二样品的表面上金属染色。 用金属染色的第一和第二样品被热处理，并且第一和第二过渡金属被扩散到样品的内部。 分别测量整个第一和第二样品中的重组寿命，并且第一样品的垂直测量与第二样品的垂直测量重叠。 区域[Pi]和[I]之间的边界以及区域[V]和[Pv]之间的边界分别由重叠结果指定。

公开(公告)号：US20110248372A1

公开(公告)日：2011-10-13

申请号：US13124578

申请日：2009-10-16

申请人： Kazunari Kurita

发明人： Kazunari Kurita

IPC分类号： H01L31/02 ,  H01L21/26

CPC分类号： H01L21/268 ,  C30B29/06 ,  H01L21/322 ,  H01L27/14603 ,  H01L27/14698 ,  Y10S117/904

摘要： A semiconductor wafer is set in a laser irradiation apparatus, and laser beam irradiation is performed while the semiconductor wafer is moved. At this time, a laser beam emitted from a laser generating apparatus is condensed by a condensing lens so that the condensing point (focal point) is positioned at a depth of several tens of gm or so from one surface of the semiconductor wafer. Thereby, the crystal structure of the semiconductor wafer in the position having such a depth is modified, and a gettering sink is formed.

摘要翻译： 将半导体晶片设置在激光照射装置中，并且在半导体晶片移动的同时进行激光束照射。 此时，从激光发生装置发射的激光束被聚光透镜冷凝，使得聚光点（焦点）位于半导体晶片的一个表面的几十μm左右的深度。 由此，改变了具有这样深度的位置的半导体晶片的晶体结构，形成了吸杂槽。

公开(公告)号：US20110049664A1

公开(公告)日：2011-03-03

申请号：US12872674

申请日：2010-08-31

申请人： Kazunari Kurita

发明人： Kazunari Kurita

IPC分类号： H01L27/146 ,  H01L21/322 ,  H01L31/08

CPC分类号： H01L21/02381 ,  H01L21/02378 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02658 ,  H01L21/3225 ,  H01L27/146 ,  H01L27/1464

摘要： Provided is an epitaxial substrate for a back-illuminated image sensor and a manufacturing method thereof that is capable of suppressing metal contaminations and reducing occurrence of a white spot defect of the image sensor, by maintaining a sufficient gettering performance in a device process. The present invention includes forming a gettering sink immediately below a surface of a high-oxygen silicon substrate, forming a first epitaxial layer on the surface of the high-oxygen silicon substrate, and forming a second epitaxial layer on the first epitaxial layer, in which the step of forming the gettering sink includes forming an oxygen precipitate region by applying a long-time heat treatment at a temperature of 650-1150° C. to the high-oxygen silicon substrate.

摘要翻译： 本发明提供一种背照式图像传感器的外延基板及其制造方法，其能够通过在器件工艺中保持充分的吸杂性能来抑制金属污染并减少图像传感器的白斑缺陷的发生。 本发明包括在高氧硅衬底的表面的正下方形成吸气槽，在高氧硅衬底的表面上形成第一外延层，在第一外延层上形成第二外延层，其中 形成吸气槽的步骤包括通过在650-1150℃的温度下对高氧硅衬底进行长时间热处理来形成氧沉淀区域。

公开(公告)号：US20100224968A1

公开(公告)日：2010-09-09

申请号：US12714659

申请日：2010-03-01

申请人： Kazunari Kurita

发明人： Kazunari Kurita

IPC分类号： H01L29/36 ,  H01L21/322

CPC分类号： H01L21/3225 ,  C30B15/00 ,  C30B29/06 ,  H01L21/324 ,  H01L29/864 ,  H01L29/868

摘要： This method for manufacturing a high resistivity silicon wafer includes pulling a single crystal such that the single crystal has a p-type dopant concentration at which a wafer surface resistivity becomes in a range of 0.1 to 10 kΩcm, an oxygen concentration Oi of 5.0×1017 to 20×1017 atoms/cm3 (ASTM F-121, 1979), and either one of a nitrogen concentration of 1.0×1013 to 10×1013 atoms/cm3 (ASTM F-121, 1979) and a carbon concentration of 0.5×1016 to 10×1016 atoms/cm3 or 0.5×1016 to 50×1016 atoms/cm3 (ASTM F-123, 1981) by using a Czochralski method, processing the single crystal into wafers by slicing the single crystal, and subjecting the wafer to an oxygen out-diffusion heat treatment process in a non-oxidizing atmosphere. A peak position of a resistivity serving as a boundary between a p-type region of a wafer surface side and a p/n conversion region of an inner side of a thickness direction is adjusted by the nitrogen concentration or the carbon concentration such that the peak position is set to a boundary depth in a range of 10 to 70 μm from the wafer surface.

摘要翻译： 这种制造高电阻率硅晶片的方法包括拉制单晶，使得单晶具有p型掺杂剂浓度，晶片表面电阻率变为0.1至10kΩ/ cm 2，氧浓度Oi为5.0 ×1017〜20×1017原子/ cm3（ASTM F-121,1979），氮浓度为1.0×1013〜10×1013原子/ cm3（ASTM F-121,1979），碳浓度为0.5 ×1016〜10×1016原子/ cm3或0.5×1016〜50×1016原子/ cm3（ASTM F-123,1981），通过切割单晶将单晶加工成晶片， 涉及在非氧化性气氛中的氧扩散热处理工艺。 作为晶片表面侧的p型区域和厚度方向内侧的ap / n转换区域之间的边界的电阻率的峰值位置通过氮浓度或碳浓度来调节，使得峰值位置 被设定为距晶片表面10〜70μm范围内的边界深度。

公开(公告)号：US20100148297A1

公开(公告)日：2010-06-17

申请号：US11996925

申请日：2007-09-07

申请人： Kazunari Kurita

发明人： Kazunari Kurita

IPC分类号： H01L31/14 ,  H01L31/0352 ,  H01L31/0256 ,  H01L31/18

CPC分类号： H01L31/186 ,  C30B15/04 ,  C30B29/06 ,  C30B33/02 ,  H01L21/3221 ,  H01L27/14603 ,  Y02E10/50 ,  Y02P70/521

摘要： There is provided a semiconductor substrate for solid-state image sensing device in which the production cost is lower than that of a gettering method through a carbon ion implantation and problems such as occurrence of particles at a device production step and the like are solved.Silicon substrate contains solid-soluted carbon having a concentration of 1×1016-1×1017 atoms/cm3 and solid-soluted oxygen having a concentration of 1.4×1018-1.6×1018 atoms/cm3.

摘要翻译： 提供了一种用于固体摄像装置的半导体衬底，其中生产成本低于通过碳离子注入的吸气方法的生产成本，并且解决了在器件制造步骤等处发生颗粒的问题。 硅衬底含有浓度为1×1016-1×1017原子/ cm3的固溶碳，浓度为1.4×1018-1.6×1018原子/ cm3的固溶氧。

公开(公告)号：US20090289283A1

公开(公告)日：2009-11-26

申请号：US12469505

申请日：2009-05-20

申请人： Kazunari Kurita ,  Shuichi Omote

发明人： Kazunari Kurita ,  Shuichi Omote

IPC分类号： H01L31/0392 ,  H01L31/18 ,  H01L21/30

CPC分类号： H01L27/14634 ,  H01L21/3226 ,  H01L27/1203 ,  H01L27/1464 ,  H01L27/1469

摘要： A wafer for backside illumination type solid imaging device has a plurality of pixels inclusive of a photoelectric conversion device and a charge transfer transistor at its front surface side and a light receiving surface at its back surface side, wherein said wafer is a SOI wafer obtained by forming a given active layer on a support substrate made of C-containing p-type semiconductor material through an insulating layer.

摘要翻译： 背面照明型固体成像装置的晶片具有多个像素，包括其表面侧的光电转换装置和电荷转移晶体管及其后表面侧的光接收表面，其中所述晶片是由 通过绝缘层在由含C的p型半导体材料制成的支撑衬底上形成给定的有源层。

公开(公告)号：US07560163B2

公开(公告)日：2009-07-14

申请号：US11699894

申请日：2007-01-29

申请人： Kazunari Kurita

发明人： Kazunari Kurita

IPC分类号： B32B9/00

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B33/02

摘要： A silicon wafer that has a carbon concentration of 5×1015 to 5×1017 atoms/cm3, interstitial oxygen concentration of 6.5×1017 to 13.5×1017 atoms/cm3, and a resistivity of 100 Ωcm or more.

摘要翻译： 碳浓度为5×10 15〜5×10 17原子/ cm 3的硅晶片，间隙氧浓度为6.5×10 17〜13.5×10 17原子/ cm 3，电阻率为100Ωm以上。