公开(公告)号：US08384077B2

公开(公告)日：2013-02-26

申请号：US12747573

申请日：2008-12-10

申请人： Koki Yano ,  Hirokazu Kawashima ,  Kazuyoshi Inoue ,  Shigekazu Tomai ,  Masashi Kasami

发明人： Koki Yano ,  Hirokazu Kawashima ,  Kazuyoshi Inoue ,  Shigekazu Tomai ,  Masashi Kasami

IPC分类号： H01L29/86 ,  H01L29/10

CPC分类号： H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78633 ,  H01L29/7869

摘要： A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8  (1) In/(In+Ga)=0.59 to 0.99  (2) Zn/(Ga+Zn)=0.29 to 0.99  (3).

摘要翻译： 一种场效应晶体管，其在衬底上至少包含半导体层，所述半导体层的钝化层，源电极，漏电极，栅绝缘膜和栅电极，所述源电极和所述漏电极为 通过所述半导体层连接，所述栅极绝缘膜存在于所述栅电极和所述半导体层之间，所述钝化层至少在所述半导体层的一个表面侧，所述半导体层包括复合氧化物，所述复合氧化物包括In（铟） ，In（In + Zn）= 0.2〜0.8（1）In /（In + Ga）= 0.59〜0.99（2）的Zn（锌）和Ga（镓） ）Zn /（Ga + Zn）= 0.29〜0.99（3）。

公开(公告)号：US20100276688A1

公开(公告)日：2010-11-04

申请号：US12810189

申请日：2008-12-19

申请人： Koki Yano ,  Hirokazu Kawashima ,  Kazuyoshi Inoue ,  Shigekazu Tomai ,  Masashi Kasami

发明人： Koki Yano ,  Hirokazu Kawashima ,  Kazuyoshi Inoue ,  Shigekazu Tomai ,  Masashi Kasami

IPC分类号： H01L29/786 ,  H01L21/36 ,  H01L29/12 ,  H01L21/20

CPC分类号： H01L29/263 ,  C23C14/086 ,  H01L29/7869

摘要： A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8  (1) In/(In+X)=0.29 to 0.99  (2) Zn/(X+Zn)=0.29 to 0.99  (3).

摘要翻译： 一种场效应晶体管，包括：包含含有In，Zn和选自Zr，Hf，Ge，Si，Ti，Mn，W，Mo，V，Cu， （1）〜（3）中的In /（In + Zn）= 0.2〜0.8（1）In /（In） + X）= 0.29〜0.99（2）Zn /（X + Zn）= 0.29〜0.99（3）。

公开(公告)号：US08748879B2

公开(公告)日：2014-06-10

申请号：US12599241

申请日：2008-05-01

申请人： Koki Yano ,  Kazuyoshi Inoue ,  Futoshi Utsuno ,  Masashi Kasami ,  Katsunori Honda

发明人： Koki Yano ,  Kazuyoshi Inoue ,  Futoshi Utsuno ,  Masashi Kasami ,  Katsunori Honda

IPC分类号： H01L29/12 ,  H01L21/02 ,  H01L29/786

CPC分类号： H01L21/02554 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/872

摘要： A semiconductor device, a thin film transistor, and a method for producing the same capable of decreasing the management cost, and capable of decreasing the production steps to reduce the production cost are proposed. A method for producing a thin film transistor 2 provided with a semiconductor which is composed of a prescribed material and serves as an active layer 41 and a conductor which is composed of a material having the same composition as that of the prescribed material and serves as at least one of a source electrode 51, a drain electrode 53 and a pixel electrode 55, which includes the steps of simultaneously forming into a film an object to be processed and a conductor (a source electrode 51, a source wire 52, a drain electrode 53, a drain wire 54 and a pixel electrode 55) which are composed of the amorphous prescribed material, followed by simultaneous shaping, and crystallizing the object to be processed which has been shaped to allow it to be the active layer 41.

摘要翻译： 提出了一种半导体器件，薄膜晶体管及其制造方法，其能够降低管理成本，并且能够降低生产步骤以降低生产成本。 一种制造薄膜晶体管2的方法，该薄膜晶体管2设置有由规定材料构成并用作有源层41的半导体以及由具有与规定材料相同成分的材料构成的导体， 源极电极51，漏极电极53和像素电极55中的至少一个，其包括同时形成待处理物体的膜和导体（源电极51，源极线52，漏电极 53，漏极线54和像素电极55），其由非晶态规定材料构成，然后同时成形，并且使已被成形为使其成为有源层41的被处理物体结晶化。

公开(公告)号：US08642402B2

公开(公告)日：2014-02-04

申请号：US12526304

申请日：2008-02-06

申请人： Koki Yano ,  Kazuyoshi Inoue ,  Futoshi Utsuno ,  Masashi Kasami

发明人： Koki Yano ,  Kazuyoshi Inoue ,  Futoshi Utsuno ,  Masashi Kasami

IPC分类号： H01L21/335 ,  H01L21/8232 ,  H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/00 ,  H01L29/76 ,  H01L31/112

CPC分类号： C23C14/3414 ,  C23C14/086 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66969 ,  H01L29/7869

摘要： To provide a method for producing a thin film transistor improved in stability, uniformity, reproducibility, heat resistance, durability or the like, a thin film transistor, a thin film transistor substrate, an image display apparatus, an image display apparatus and a semiconductor device.In the semiconductor device, a crystalline oxide is used as an N-type transistor and the electron carrier concentration of the crystalline oxide is less than 2×1017/cm3. Furthermore, the crystalline oxide is a polycrystalline oxide containing In and one or more positive divalent elements selected from Zn, Mg, Cu, Ni, Co and Ca, and the atomic ratio In [In] and the positive divalent element [X][X]/([X]+[In]) is 0.0001 to 0.13.

摘要翻译： 为了提供一种提高稳定性，均匀性，再现性，耐热性，耐久性等的薄膜晶体管的制造方法，薄膜晶体管，薄膜晶体管基板，图像显示装置，图像显示装置和半导体装置 。 在半导体装置中，结晶性氧化物用作N型晶体管，结晶性氧化物的电子载流子浓度小于2×1017 / cm3。 此外，结晶性氧化物是含有In的一种或多种选自Zn，Mg，Cu，Ni，Co和Ca中的一种或多种正的二价元素的多晶氧化物，并且原子比In [In]和正的二价元素[X] [X ] /（[X] + [In]）为0.0001〜0.13。

公开(公告)号：US20110260157A1

公开(公告)日：2011-10-27

申请号：US12599241

申请日：2008-05-01

申请人： Koki Yano ,  Kazuyoshi Inoue ,  Futoshi Utsuno ,  Masashi Kasami ,  Katsunori Honda

发明人： Koki Yano ,  Kazuyoshi Inoue ,  Futoshi Utsuno ,  Masashi Kasami ,  Katsunori Honda

IPC分类号： H01L29/786 ,  H01L21/36 ,  H01L29/26

CPC分类号： H01L21/02554 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/872

摘要： A semiconductor device, a thin film transistor, and a method for producing the same capable of decreasing the management cost, and capable of decreasing the production steps to reduce the production cost are proposed. A method for producing a thin film transistor 2 provided with a semiconductor which is composed of a prescribed material and serves as an active layer 41 and a conductor which is composed of a material having the same composition as that of the prescribed material and serves as at least one of a source electrode 51, a drain electrode 53 and a pixel electrode 55, which includes the steps of simultaneously forming into a film an object to be processed and a conductor (a source electrode 51, a source wire 52, a drain electrode 53, a drain wire 54 and a pixel electrode 55) which are composed of the amorphous prescribed material, followed by simultaneous shaping, and crystallizing the object to be processed which has been shaped to allow it to be the active layer 41.

摘要翻译： 提出了一种半导体器件，薄膜晶体管及其制造方法，其能够降低管理成本，并且能够降低生产步骤以降低生产成本。 一种制造薄膜晶体管2的方法，该薄膜晶体管2设置有由规定材料构成并用作有源层41的半导体以及由具有与规定材料相同成分的材料构成的导体， 源极电极51，漏极电极53和像素电极55中的至少一个，其包括同时形成待处理物体的膜和导体（源电极51，源极线52，漏电极 53，漏极线54和像素电极55），其由非晶态规定材料构成，然后同时成形，并且使已被成形为使其成为有源层41的被处理物体结晶化。

公开(公告)号：US20110050733A1

公开(公告)日：2011-03-03

申请号：US12526304

申请日：2008-02-06

申请人： Koki Yano ,  Kazuyoshi Inoue ,  Futoshi Utsuno ,  Masashi Kasami

发明人： Koki Yano ,  Kazuyoshi Inoue ,  Futoshi Utsuno ,  Masashi Kasami

IPC分类号： G09G5/10

CPC分类号： C23C14/3414 ,  C23C14/086 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66969 ,  H01L29/7869

摘要： To provide a method for producing a thin film transistor improved in stability, uniformity, reproducibility, heat resistance, durability or the like, a thin film transistor, a thin film transistor substrate, an image display apparatus, an image display apparatus and a semiconductor device.In the semiconductor device, a crystalline oxide is used as an N-type transistor and the electron carrier concentration of the crystalline oxide is less than 2×1017/cm3. Furthermore, the crystalline oxide is a polycrystalline oxide containing In and one or more positive divalent elements selected from Zn, Mg, Cu, Ni, Co and Ca, and the atomic ratio In [In] and the positive divalent element [X][X]/([X]+[In]) is 0.0001 to 0.13.

摘要翻译： 为了提供一种提高稳定性，均匀性，再现性，耐热性，耐久性等的薄膜晶体管的制造方法，薄膜晶体管，薄膜晶体管基板，图像显示装置，图像显示装置和半导体装置 。 在半导体装置中，结晶性氧化物用作N型晶体管，结晶性氧化物的电子载流子浓度小于2×1017 / cm3。 此外，结晶性氧化物是含有In的一种或多种选自Zn，Mg，Cu，Ni，Co和Ca中的一种或多种正的二价元素的多晶氧化物，并且原子比In [In]和正的二价元素[X] [X ] /（[X] + [In]）为0.0001〜0.13。

公开(公告)号：US20100295042A1

公开(公告)日：2010-11-25

申请号：US12864078

申请日：2009-01-22

申请人： Koki Yano ,  Kazuyoshi Inoue ,  Hirokazu Kawashima ,  Shigekazu Tomai

发明人： Koki Yano ,  Kazuyoshi Inoue ,  Hirokazu Kawashima ,  Shigekazu Tomai

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869

摘要： A field effect transistor which includes an oxide film as a semiconductor layer, the oxide film has a channel part, a source part and a drain part, and the channel part, the source part and the drain part have substantially the same composition except oxygen and an inert gas.

摘要翻译： 一种场效应晶体管，其包括氧化膜作为半导体层，所述氧化膜具有沟道部分，源极部分和漏极部分，并且所述沟道部分，所述源极部分和所述漏极部分除氧之外具有基本上相同的组成， 惰性气体。

公开(公告)号：US08623511B2

公开(公告)日：2014-01-07

申请号：US12996598

申请日：2009-06-05

申请人： Hirokazu Kawashima ,  Koki Yano ,  Futoshi Utsuno ,  Kazuyoshi Inoue

发明人： Hirokazu Kawashima ,  Koki Yano ,  Futoshi Utsuno ,  Kazuyoshi Inoue

IPC分类号： B32B33/00

CPC分类号： H01L21/02565 ,  C04B35/01 ,  C04B35/453 ,  C04B35/6262 ,  C04B35/62655 ,  C04B35/62695 ,  C04B37/026 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3293 ,  C04B2235/40 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/6027 ,  C04B2235/652 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6581 ,  C04B2235/6586 ,  C04B2235/661 ,  C04B2235/76 ,  C04B2235/761 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/963 ,  C04B2235/9661 ,  C04B2237/12 ,  C04B2237/34 ,  C04B2237/407 ,  C23C14/086 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/7869 ,  Y10T428/31507

摘要： Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a film. Also disclosed is an oxide for a sputtering target that has a rare earth oxide C-type crystal structure and has a surface free from white spots (a poor appearance such as concaves and convexes formed on the surface of the sputtering target). Further disclosed is an oxide sintered compact that has a bixbyite structure and contains indium oxide, gallium oxide, and zinc oxide. The composition amounts (atomic %) of indium (In), gallium (Ga), and zinc (Zn) fall within a composition range satisfying the following formula: In/(In+Ga+Zn)

摘要翻译： 公开了一种溅射靶，其可以通过溅射法抑制氧化物半导体膜形成中的异常放电的发生，并且可以连续且稳定地形成膜。 还公开了具有稀土氧化物C型晶体结构并具有没有白点的表面（在溅射靶的表面上形成的凹凸等差的外观）的溅射靶的氧化物。 进一步公开了具有双相结构并含有氧化铟，氧化镓和氧化锌的氧化物烧结体。 铟（In），镓（Ga）和锌（Zn）的成分量（原子％）落在满足下式的组成范围内：In /（In + Ga + Zn）<0.75。

公开(公告)号：US20110168994A1

公开(公告)日：2011-07-14

申请号：US12996598

申请日：2009-06-05

申请人： Hirokazu Kawashima ,  Koki Yano ,  Futoshi Utsuno ,  Kazuyoshi Inoue

发明人： Hirokazu Kawashima ,  Koki Yano ,  Futoshi Utsuno ,  Kazuyoshi Inoue

IPC分类号： H01L29/786 ,  H01L21/42 ,  C23C14/08 ,  C23C14/34 ,  C04B35/64 ,  H01B1/02

CPC分类号： H01L21/02565 ,  C04B35/01 ,  C04B35/453 ,  C04B35/6262 ,  C04B35/62655 ,  C04B35/62695 ,  C04B37/026 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3293 ,  C04B2235/40 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/6027 ,  C04B2235/652 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6581 ,  C04B2235/6586 ,  C04B2235/661 ,  C04B2235/76 ,  C04B2235/761 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/963 ,  C04B2235/9661 ,  C04B2237/12 ,  C04B2237/34 ,  C04B2237/407 ,  C23C14/086 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/7869 ,  Y10T428/31507

摘要： Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a film. Also disclosed is an oxide for a sputtering target that has a rare earth oxide C-type crystal structure and has a surface free from white spots (a poor appearance such as concaves and convexes formed on the surface of the sputtering target). Further disclosed is an oxide sintered compact that has a bixbyite structure and contains indium oxide, gallium oxide, and zinc oxide. The composition amounts (atomic %) of indium (In), gallium (Ga), and zinc (Zn) fall within a composition range satisfying the following formula: In/(In+Ga+Zn)

摘要翻译： 公开了一种溅射靶，其可以通过溅射法抑制氧化物半导体膜形成中的异常放电的发生，并且可以连续且稳定地形成膜。 还公开了具有稀土氧化物C型晶体结构并具有没有白点的表面（在溅射靶的表面上形成的凹凸等差的外观）的溅射靶的氧化物。 进一步公开了具有双相结构并含有氧化铟，氧化镓和氧化锌的氧化物烧结体。 铟（In），镓（Ga）和锌（Zn）的组成量（原子％）落在满足下式的组成范围内：In /（In + Ga + Zn）<0.75

公开(公告)号：US20140145185A1

公开(公告)日：2014-05-29

申请号：US14130857

申请日：2012-06-28

申请人： Kazuaki Ebata ,  Shigekazu Tomai ,  Kota Terai ,  Shigeo Matsuzaki ,  Koki Yano

发明人： Kazuaki Ebata ,  Shigekazu Tomai ,  Kota Terai ,  Shigeo Matsuzaki ,  Koki Yano

IPC分类号： H01L21/02 ,  H01L29/786 ,  H01L27/12 ,  C23C14/08

CPC分类号： H01L21/02565 ,  C01G15/00 ,  C04B35/01 ,  C04B35/6261 ,  C04B2235/3201 ,  C04B2235/3206 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3293 ,  C04B2235/3418 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/604 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6584 ,  C04B2235/6585 ,  C04B2235/664 ,  C04B2235/763 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/963 ,  C23C14/08 ,  C23C14/081 ,  C23C14/086 ,  C23C14/3414 ,  H01B1/08 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869

摘要： A sputtering target including a sintered body including In, Ga and Mg, the sintered body including one or more compounds selected from a compound represented by In2O3, a compound represented by In(GaMg)O4, a compound represented by Ga2MgO4 and a compound represented by In2MgO4, and having an atomic ratio In/(In+Ga+Mg) of 0.5 or more and 0.9999 or less and an atomic ratio (Ga+Mg)/(In+Ga+Mg) of 0.0001 or more and 0.5 or less.

摘要翻译： 包括In，Ga和Mg的烧结体的溅射靶，所述烧结体包含一种或多种选自In2O3，In（GaMg）O4表示的化合物，由Ga2MgO4表示的化合物和由 InMgO 4，原子比In /（In + Ga + Mg）为0.5以上且0.9999以下，原子比（Ga + Mg）/（In + Ga + Mg）为0.0001以上且0.5以下。