摘要:
A sputtering target including a sintered body including In, Ga and Mg, the sintered body including one or more compounds selected from a compound represented by In2O3, a compound represented by In(GaMg)O4, a compound represented by Ga2MgO4 and a compound represented by In2MgO4, and having an atomic ratio In/(In+Ga+Mg) of 0.5 or more and 0.9999 or less and an atomic ratio (Ga+Mg)/(In+Ga+Mg) of 0.0001 or more and 0.5 or less.
摘要翻译:包括In,Ga和Mg的烧结体的溅射靶,所述烧结体包含一种或多种选自In2O3,In(GaMg)O4表示的化合物,由Ga2MgO4表示的化合物和由 InMgO 4,原子比In /(In + Ga + Mg)为0.5以上且0.9999以下,原子比(Ga + Mg)/(In + Ga + Mg)为0.0001以上且0.5以下。
摘要:
A sputtering target including a sintered body including In, Ga and Mg, the sintered body including one or more compounds selected from a compound represented by In2O3, a compound represented by In(GaMg)O4, a compound represented by Ga2MgO4 and a compound represented by In2MgO4, and having an atomic ratio In/(In+Ga+Mg) of 0.5 or more and 0.9999 or less and an atomic ratio (Ga+Mg)/(In+Ga+Mg) of 0.0001 or more and 0.5 or less.
摘要翻译:包括In,Ga和Mg的烧结体的溅射靶,所述烧结体包含一种或多种选自In2O3,In(GaMg)O4表示的化合物,由Ga2MgO4表示的化合物和由 InMgO 4,原子比In /(In + Ga + Mg)为0.5以上且0.9999以下,原子比(Ga + Mg)/(In + Ga + Mg)为0.0001以上且0.5以下。
摘要:
A sintered body includes an indium oxide crystal, and an oxide solid-dissolved in the indium oxide crystal, the oxide being oxide of one or more metals selected from the group consisting of aluminum and scandium, the sintered body having an atomic ratio “(total of the one or more metals)/(total of the one or more metals and indium)×100)” of 0.001% or more and less than 45%.
摘要:
A sintered body includes an indium oxide crystal, and an oxide solid-dissolved in the indium oxide crystal, the oxide being oxide of one or more metals selected from the group consisting of aluminum and scandium, the sintered body having an atomic ratio “(total of the one or more metals)/(total of the one or more metals and indium)×100)” of 0.001% or more and less than 45%.
摘要:
An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure.
摘要:
An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure.
摘要:
A method of adjusting the in-plane lattice constant of a substrate and an in-plane lattice constant adjusted substrate are provided. A crystalline substrate (1) made of SrTiO3 is formed at a first preestablished temperature thereon with a first epitaxial thin film (2) made of a first material, e. g., BaTiO3, and then on the first epitaxial thin film (2) with a second epitaxial thin film (6) made of a second material, e. g., BaxSr1−xTiO3 (where 0
摘要翻译:提供了调整衬底和面内晶格常数调整衬底的面内晶格常数的方法。 在第一预先制备的温度下,用由第一材料制成的第一外延薄膜(2)形成由SrTiO 3 3制成的晶体衬底(1) 然后在由第二材料制成的第二外延薄膜(6)上的第一外延薄膜(2)上,例如BaTiO 3 3, 例如,含有第一材料的物质和与其一起形成的另一物质的BaxSr 1-x N 2 O 3(其中0