公开(公告)号：US06995036B2

公开(公告)日：2006-02-07

申请号：US10478649

申请日：2002-05-24

申请人： Shigehiro Nishino ,  Kazutoshi Murata ,  Yoshiharu Chinone

发明人： Shigehiro Nishino ,  Kazutoshi Murata ,  Yoshiharu Chinone

IPC分类号： H01L21/00

CPC分类号： C30B23/02 ,  C30B29/36 ,  Y10T117/10

摘要： The present invention has its object to make it possible to produce an α-SiC wafer with stability and good reproducibility at low cost without using a seed crystal substrate that is expensive and less available. In each of crucibles 11a, 11b, 11c, and so on, a β-SiC substrate 19 and an SiC raw material 17 are placed to face each other in close proximity. These crucibles are stacked in layers, and placed inside a radiation tube 40. The radiation tube 40 is heated by an induction heating coil 23, radiates radiation heat, and uniformly heats the crucibles 11a, 11b, 11c and so on. The SiC raw material in each of the crucibles is sublimated and recrystallized on a surface of the β-SiC substrate 19.

摘要翻译： 本发明的目的是使得可以以低成本制造具有稳定性和良好重现性的α-SiC晶片，而不使用昂贵且不太可用的晶种基底。 在每个坩埚11a，11b，11c等中，将β-SiC衬底19和SiC原料17彼此靠近放置。 这些坩埚堆叠成层，放置在辐射管40的内部。 辐射管40由感应加热线圈23加热，辐射辐射热，并均匀加热坩埚11a，11b，11c等。 在每个坩埚中的SiC原料在β-SiC衬底19的表面上升华并重结晶。

公开(公告)号：US20060097266A1

公开(公告)日：2006-05-11

申请号：US10520141

申请日：2003-06-30

申请人： Shigehiro Nishino ,  Kazutoshi Murata

发明人： Shigehiro Nishino ,  Kazutoshi Murata

IPC分类号： H01L31/0312

CPC分类号： C30B29/36 ,  C30B33/06 ,  H01L21/0445 ,  H01L29/0657 ,  H01L29/1608

摘要： From the viewpoint of manufacturing an SiC semiconductor device economically, a present Si device manufacturing line is utilized to make it possible to handle a small-diameter SiC wafer. Polycrystal SiC is grown from at least one surface side of a small-diameter a-SiC single crystal wafer so as to be in a size of an outer diameter corresponding to a handling device of an existing semiconductor manufacturing line, and thereafter the polycrystal SiC on the surface of the α-SiC single crystal wafer is ground to manufacture an increased-diameter SiC of a double structure in which the polycrystal SiC is grown around an outer circumference of the small-diameter α-SiC single crystal wafer.

摘要翻译： 从经济地制造SiC半导体器件的观点出发，利用现有的Si器件制造线可以处理小直径的SiC晶片。 多晶SiC从小直径a-SiC单晶晶片的至少一个表面侧生长成与现有半导体制造线的处理装置相对应的外径尺寸，然后将多晶SiC开 将α-SiC单晶晶片的表面研磨以制造双结构的增加直径的SiC，其中多晶SiC围绕小直径α-SiC单晶晶片的外周生长。

公开(公告)号：US20110305836A1

公开(公告)日：2011-12-15

申请号：US13203400

申请日：2010-03-03

申请人： Kazutoshi Murata ,  Yasunari Mori

发明人： Kazutoshi Murata ,  Yasunari Mori

IPC分类号： C23C16/458

CPC分类号： C23C16/45544 ,  C23C14/56 ,  C23C14/562 ,  C23C14/568 ,  C23C16/4401 ,  C23C16/4409 ,  C23C16/45525 ,  C23C16/45553 ,  C23C16/46 ,  C23C16/50 ,  C23C16/54 ,  H01J37/32752

摘要： An atomic layer deposition apparatus, which forms a thin film on a substrate, includes a first container that defines a first inner space and includes a substrate carrying-in and carrying-out port and a gas introduction port in different positions, the substrate being carried in and out through the substrate carrying-in and carrying-out port, gas being introduced through the gas introduction port to form the thin film on the substrate, a second container that is provided in the first container to define a second inner space separated from the first inner space, the second container including a first opening, a first moving mechanism that moves the second container in a predetermined direction, and a controller that controls the first moving mechanism such that the second container is moved to a first position where the substrate carrying-in and carrying-out port and the first opening are located opposite each other when the substrate is carried in and out, the controller controlling the first moving mechanism such that the second container is moved to a second position where the gas introduction port and the first opening are located opposite each other when the thin film is formed on the substrate.

摘要翻译： 在基板上形成薄膜的原子层沉积装置包括：第一容器，其限定第一内部空间，并且包括基板搬入口和排出口;以及气体导入口，位于不同的位置，所述基板被承载 通过所述基板输入和输出端口进出的气体，所述气体通过所述气体引入口引入以在所述基板上形成所述薄膜;第二容器，设置在所述第一容器中，以限定与所述第二内部空间分离的第二内部空间; 所述第一内部空间，所述第二容器包括第一开口，沿预定方向移动所述第二容器的第一移动机构;以及控制器，其控制所述第一移动机构，使得所述第二容器移动到所述第一位置， 当输入和输出基板时，输入和输出端口和第一开口彼此相对定位，控制器控制 e第一移动机构，使得当在基板上形成薄膜时，第二容器移动到第二位置，在第二位置，气体导入口和第一开口彼此相对定位。

公开(公告)号：US20110008550A1

公开(公告)日：2011-01-13

申请号：US12863565

申请日：2009-01-22

申请人： Kazutoshi Murata ,  Keisuke Washio

发明人： Kazutoshi Murata ,  Keisuke Washio

IPC分类号： C23C16/509 ,  C23C16/00

CPC分类号： H01L21/0228 ,  C23C16/403 ,  C23C16/45536 ,  H01J37/321 ,  H01J37/3211 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/3141

摘要： An atomic layer growing apparatus includes a deposition container, a gas supply unit, and an exhaust unit. In the deposition container, an antenna array and a substrate stage are provided. The antenna array is formed by disposing a plurality of antenna elements in parallel, each of the antenna elements being configured by coating a rod-shaped antenna body with a dielectric material. The antenna array generates plasma using one of an oxidizing gas and a nitriding gas. The substrate is placed on the substrate stage. The gas supply unit alternately supplies the source gas and the oxidizing gas toward the substrate stage from a supply hole made in a sidewall of the deposition container when a film is formed on the substrate. The exhaust unit exhausts the source gas and one of the oxidizing gas and the nitriding gas, which are alternately supplied into the deposition container.

摘要翻译： 原子层生长装置包括沉积容器，气体供应单元和排气单元。 在沉积容器中，设置有天线阵列和基板台。 天线阵列通过平行地布置多个天线元件而形成，每个天线元件通过用介电材料涂覆棒状天线体而构成。 天线阵列使用氧化气体和氮化气体之一产生等离子体。 将衬底放置在衬底台上。 当在基板上形成膜时，气体供给单元将源气体和氧化气体从沉积容器的侧壁上形成的供给孔向基板台供给。 排气单元排出源气体和氧化气体和氮化气体之一，交替地供给到沉积容器中。

公开(公告)号：US07544249B2

公开(公告)日：2009-06-09

申请号：US10520141

申请日：2003-06-30

申请人： Shigehiro Nishino ,  Kazutoshi Murata

发明人： Shigehiro Nishino ,  Kazutoshi Murata

IPC分类号： C30B29/36

CPC分类号： C30B29/36 ,  C30B33/06 ,  H01L21/0445 ,  H01L29/0657 ,  H01L29/1608

摘要： From the viewpoint of manufacturing an SiC semiconductor device economically, a present Si device manufacturing line is utilized to make it possible to handle a small-diameter SiC wafer. Polycrystal SiC is grown from at least one surface side of a small-diameter a-SiC single crystal wafer so as to be in a size of an outer diameter corresponding to a handling device of an existing semiconductor manufacturing line, and thereafter the polycrystal SiC on the surface of the α-SiC single crystal wafer is ground to manufacture an increased-diameter SiC of a double structure in which the polycrystal SiC is grown around an outer circumference of the small-diameter α-SiC single crystal wafer.

摘要翻译： 从经济地制造SiC半导体器件的观点出发，利用现有的Si器件制造线可以处理小直径的SiC晶片。 多晶SiC从小直径a-SiC单晶晶片的至少一个表面侧生长成与现有半导体制造线的处理装置相对应的外径尺寸，然后将多晶SiC开 将α-SiC单晶晶片的表面研磨以制造双结构的增加直径的SiC，其中多晶SiC围绕小直径α-SiC单晶晶片的外周生长。

公开(公告)号：US09068261B2

公开(公告)日：2015-06-30

申请号：US13203400

申请日：2010-03-03

申请人： Kazutoshi Murata ,  Yasunari Mori

发明人： Kazutoshi Murata ,  Yasunari Mori

IPC分类号： C23C16/455 ,  C23C14/56 ,  C23C16/458 ,  C23C16/52 ,  H01J37/32 ,  C23C16/50 ,  C23C16/44 ,  C23C16/46 ,  C23C16/54 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45544 ,  C23C14/56 ,  C23C14/562 ,  C23C14/568 ,  C23C16/4401 ,  C23C16/4409 ,  C23C16/45525 ,  C23C16/45553 ,  C23C16/46 ,  C23C16/50 ,  C23C16/54 ,  H01J37/32752

摘要： An atomic layer deposition apparatus, which forms a thin film on a substrate, includes a first container that defines a first inner space and includes a substrate carrying-in and carrying-out port and a gas introduction port in different positions, the substrate being carried in and out through the substrate carrying-in and carrying-out port, gas being introduced through the gas introduction port to form the thin film on the substrate, a second container that is provided in the first container to define a second inner space separated from the first inner space, the second container including a first opening, a first moving mechanism that moves the second container in a predetermined direction, and a controller that controls the first moving mechanism such that the second container is moved to a first position where the substrate carrying-in and carrying-out port and the first opening are located opposite each other when the substrate is carried in and out, the controller controlling the first moving mechanism such that the second container is moved to a second position where the gas introduction port and the first opening are located opposite each other when the thin film is formed on the substrate.

摘要翻译： 在基板上形成薄膜的原子层沉积装置包括：第一容器，其限定第一内部空间，并且包括基板搬入口和排出口;以及气体导入口，位于不同的位置，所述基板被承载 通过所述基板输入和输出端口进出的气体，所述气体通过所述气体引入口引入以在所述基板上形成所述薄膜;第二容器，设置在所述第一容器中，以限定与所述第一内部空间分离的第二内部空间; 所述第一内部空间，所述第二容器包括第一开口，沿预定方向移动所述第二容器的第一移动机构;以及控制器，其控制所述第一移动机构，使得所述第二容器移动到所述第一位置， 当输入和输出基板时，输入和输出端口和第一开口彼此相对定位，控制器控制 e第一移动机构，使得当在基板上形成薄膜时，第二容器移动到第二位置，在第二位置，气体导入口和第一开口彼此相对定位。

公开(公告)号：US20110017135A1

公开(公告)日：2011-01-27

申请号：US12933677

申请日：2009-03-18

申请人： Kazutoshi Murata

发明人： Kazutoshi Murata

IPC分类号： C23C16/52 ,  C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/45561 ,  C23C16/52

摘要： An atomic layer film forming apparatus includes a plurality of gas supply pipes (121-123) for supplying a source gas to a film forming chamber (101), and an exhaust portion (105) for evacuating the inside of the film forming chamber (101). Valves (131-133) are attached to the gas supply pipes (121-123), respectively. In the film forming chamber (101), film forming chamber monitors (141-149) are arranged to measure a state in the film forming chamber (101). Based on the results of measurement by the film forming chamber monitors (141-149), a controller (107) controls the openings or opening times of the valves (131-133). The atomic layer film forming apparatus can improve gas uniformity when a plurality of gas supply ports are used.

摘要翻译： 原子层成膜装置包括用于向成膜室（101）供给源气体的多个气体供给管（121-123）和用于将成膜室（101）内部排出的排气部（105） ）。 阀（131-133）分别连接到气体供给管（121-123）。 在成膜室（101）中，成膜室监视器（141-149）布置成测量成膜室（101）中的状态。 基于成膜室监视器（141-149）的测量结果，控制器（107）控制阀（131-133）的开口或打开时间。 当使用多个气体供给口时，原子层成膜装置能够提高气体的均匀性。