公开(公告)号：US20110318925A1

公开(公告)日：2011-12-29

申请号：US13227012

申请日：2011-09-07

申请人： Takashi Tanaka ,  Kenichi Hara ,  Mitsuaki Iwashita

发明人： Takashi Tanaka ,  Kenichi Hara ,  Mitsuaki Iwashita

IPC分类号： H01L21/28

CPC分类号： H01L21/76849 ,  C23C18/1689 ,  C23C18/1834 ,  C23C18/50 ,  H01L21/288 ,  H01L21/67051 ,  H01L21/6723 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A substrate processing method includes applying electroless plating of CoWB onto a Cu interconnection line formed on a wafer W, and then performing a post-cleaning process by use of a cleaning liquid on the target substrate or wafer before a by-product is precipitated on the surface of the CoWB film formed by the electroless plating to cover the Cu interconnection line.

摘要翻译： 基板处理方法包括将CoWB的无电镀施加到形成在晶片W上的Cu互连线上，然后在副产物沉淀在目标基板或晶片上之后，通过使用目标基板或晶片上的清洗液进行后清洗处理 通过无电镀形成的CoWB膜的表面覆盖Cu互连线。

公开(公告)号：US20080226826A1

公开(公告)日：2008-09-18

申请号：US12091197

申请日：2007-06-22

申请人： Takashi Tanaka ,  Kenichi Hara ,  Mitsuaki Iwashita

发明人： Takashi Tanaka ,  Kenichi Hara ,  Mitsuaki Iwashita

IPC分类号： B05D3/10 ,  B05C11/08

CPC分类号： H01L21/76849 ,  C23C18/1689 ,  C23C18/1834 ,  C23C18/50 ,  H01L21/288 ,  H01L21/67051 ,  H01L21/6723 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A substrate processing method includes applying electroless plating of CoWB onto a Cu interconnection line formed on a wafer W, and then performing a post-cleaning process by use of a cleaning liquid on the target substrate or wafer before a by-product is precipitated on the surface of the CoWB film formed by the electroless plating to cover the Cu interconnection line.

摘要翻译： 基板处理方法包括将CoWB的无电镀施加到形成在晶片W上的Cu互连线上，然后在副产物沉淀在靶基板或晶片上之后，通过使用目标基板或晶片上的清洗液进行后清洗处理 通过无电镀形成的CoWB膜的表面覆盖Cu互连线。

公开(公告)号：US08062955B2

公开(公告)日：2011-11-22

申请号：US12091131

申请日：2007-06-22

申请人： Takashi Tanaka ,  Kenichi Hara ,  Mitsuaki Iwashita

发明人： Takashi Tanaka ,  Kenichi Hara ,  Mitsuaki Iwashita

IPC分类号： H01L21/76

CPC分类号： H01L21/76849 ,  C23C18/1689 ,  C23C18/1834 ,  C23C18/50 ,  H01L21/288 ,  H01L21/67051 ,  H01L21/6723 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A CoWB film is formed as a cap metal on a Cu interconnection line formed on a substrate or wafer W, by repeating a plating step and a post-cleaning step a plurality of times. The plating step is arranged to apply electroless plating containing CoWB onto the Cu interconnection line. The post-cleaning step is arranged to clean the wafer W by use of a cleaning liquid, after the plating step.

摘要翻译： 通过重复电镀步骤和后清洗步骤多次，在形成在基板或晶片W上的Cu互连线上形成CoWB膜作为帽金属。 电镀步骤被布置成将含有CoWB的无电镀施加到Cu互连线上。 后清洗步骤被布置成在电镀步骤之后通过使用清洁液体清洁晶片W.

公开(公告)号：US20080280437A1

公开(公告)日：2008-11-13

申请号：US12091131

申请日：2007-06-22

申请人： Takashi Tanaka ,  Kenichi Hara ,  Mitsuaki Iwashita

发明人： Takashi Tanaka ,  Kenichi Hara ,  Mitsuaki Iwashita

IPC分类号： H01L21/44 ,  B05B13/02 ,  B05C11/10

CPC分类号： H01L21/76849 ,  C23C18/1689 ,  C23C18/1834 ,  C23C18/50 ,  H01L21/288 ,  H01L21/67051 ,  H01L21/6723 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A CoWB film is formed as a cap metal on a Cu interconnection line formed on a substrate or wafer W, by repeating a plating step and a post-cleaning step a plurality of times. The plating step is arranged to apply electroless plating containing CoWB onto the Cu interconnection line. The post-cleaning step is arranged to clean the wafer W by use of a cleaning liquid, after the plating step.

摘要翻译： 通过重复电镀步骤和后清洗步骤多次，在形成在基板或晶片W上的Cu互连线上形成CoWB膜作为帽金属。 电镀步骤被布置成将含有CoWB的无电镀施加到Cu互连线上。 后清洗步骤被布置成在电镀步骤之后通过使用清洁液体清洁晶片W.

公开(公告)号：US20140148006A1

公开(公告)日：2014-05-29

申请号：US13879175

申请日：2011-08-31

申请人： Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita

发明人： Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita

IPC分类号： H01L21/67 ,  H01L21/288

CPC分类号： H01L21/6723 ,  C23C18/1619 ,  C23C18/1653 ,  C23C18/1675 ,  C23C18/1676 ,  C23C18/168 ,  C23C18/50 ,  H01L21/288

摘要： A liquid treatment apparatus of continuously performing a plating process on multiple substrates includes a temperature controlling container for accommodating a plating liquid; a temperature controller for controlling a temperature of the plating liquid in the temperature controlling container; a holding unit for holding the substrates one by one at a preset position; a nozzle having a supply hole through which the temperature-controlled plating liquid in the temperature controlling container is discharged to a processing surface of the substrate; a pushing unit for pushing the temperature-controlled plating liquid in the temperature controlling container toward the supply hole of the nozzle; and a supply control unit for controlling a timing when the plating liquid is pushed by the pushing unit. The temperature controller controls the temperature of the plating liquid in the temperature controlling container based on the timing when the plating liquid is pushed by the pushing unit.

摘要翻译： 在多个基板上连续进行电镀处理的液体处理装置包括：容纳电镀液的温度控制容器; 温度控制器，用于控制温度控制容器中的电镀液的温度; 保持单元，用于将预定位置一个接一个地保持; 具有供给孔的喷嘴，所述温度控制容器中的所述温度控制电镀液通过所述供给孔排出到所述基板的处理面; 推压单元，用于将温度控制容器中的温度控制电镀液朝向喷嘴的供给孔推动; 以及供应控制单元，用于控制当推动单元推动电镀液体时的定时。 温度控制器基于由推动单元推动电镀液的时机，控制温度控制容器中的电镀液的温度。

公开(公告)号：US20100015791A1

公开(公告)日：2010-01-21

申请号：US12405620

申请日：2009-03-17

申请人： Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita

发明人： Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita

IPC分类号： H01L21/3205 ,  B05C5/00 ,  B05B7/16

CPC分类号： C25D17/001 ,  H01L21/288 ,  H01L21/76849

摘要： A film of uniform thickness can be formed on the entire surface of a substrate. A processing solution supply apparatus includes: a nozzle provided with a supply hole for discharging a plating solution toward a processing surface of a substrate held in a substantially horizontal direction; a temperature controller for accommodating therein the plating solution in an amount necessary for processing a preset number of substrates, for controlling a temperature of the accommodated plating solution up to a preset temperature; a heat insulator disposed between the nozzle and the temperature controller, for maintaining the plating solution, whose temperature has been controlled by the temperature controller, at the preset temperature; and a transporting mechanism for transporting the plating solution, whose temperature has been controlled up to the preset temperature by the temperature controller, toward the supply hole of the nozzle via the heat insulator.

摘要翻译： 可以在基板的整个表面上形成均匀厚度的膜。 一种处理液供给装置，包括：喷嘴，具有用于向保持在大致水平方向的基板的处理面排出电镀液的供给孔; 温度控制器，用于在其中容纳处理预设数量的基板所需的量的电镀液，用于将所容纳的电镀液的温度控制到预设温度; 设置在喷嘴和温度控制器之间的隔热件，用于将温度由温度控制器控制的电镀液保持在预设温度; 以及传送机构，其通过温度控制器将温度被控制到预设温度的电镀液通过隔热件输送到喷嘴的供给孔。

公开(公告)号：US20150303103A1

公开(公告)日：2015-10-22

申请号：US14343509

申请日：2012-08-08

申请人： Shoso Shinguhara ,  Fumihiro Inoue ,  Hiroshi Miyake ,  Ryohei Arima ,  Mitsuaki Iwashita ,  Takashi Tanaka

发明人： Shoso Shinguhara ,  Fumihiro Inoue ,  Hiroshi Miyake ,  Ryohei Arima ,  Mitsuaki Iwashita ,  Takashi Tanaka

IPC分类号： H01L21/768 ,  C23C18/16

CPC分类号： H01L21/76874 ,  C23C18/1608 ,  C23C18/1619 ,  C23C18/1806 ,  C23C18/1831 ,  H01L21/288 ,  H01L21/76898

摘要： A catalyst adsorption method can sufficiently adsorb a catalyst to a lower portion of a recess formed in a substrate. A substrate 20 in which a recess 22 is formed is prepared. Then, a catalyst 23 formed of nanoparticles coated with a dispersant is adsorbed to a surface of the substrate 20 by bringing the substrate 20 into contact with a catalyst solution 12 containing the catalyst by a catalyst adsorption device 10. At that time, a high frequency vibration is applied to the catalyst solution 12.

摘要翻译： 催化剂吸附方法可以将催化剂充分地吸附到形成在基板中的凹部的下部。 准备形成有凹部22的基板20。 然后，通过使催化剂吸附装置10使基板20与含有催化剂的催化剂溶液12接触，将由分散剂涂布的纳米粒子形成的催化剂23吸附在基板20的表面。此时， 对催化剂溶液12施加振动。

公开(公告)号：US20140127410A1

公开(公告)日：2014-05-08

申请号：US14129743

申请日：2012-06-20

申请人： Nobutaka Mizutani ,  Takashi Tanaka ,  Mitsuaki Iwashita

发明人： Nobutaka Mizutani ,  Takashi Tanaka ,  Mitsuaki Iwashita

IPC分类号： C23C18/16

CPC分类号： C23C18/1689 ,  C23C18/1619 ,  C23C18/1669 ,  C23C18/1675 ,  C23C18/1676

摘要： A liquid displacement is performed by supplying a plating liquid onto a substrate 2 while rotating the substrate 2 at a first rotational speed in a state that a pre-treatment liquid remains on a surface of the substrate 2 (liquid displacement process (block S305)). Then, an initial film is formed on the substrate 2 by stopping the rotation of the substrate 2 or by rotating the substrate 2 at a second rotational speed while continuously supplying the plating liquid onto the substrate 2 (incubation process (block S306)). Thereafter, a plating film is grown by rotating the substrate 2 at a third rotational speed while continuously supplying the plating liquid onto the substrate 2 (plating film growing process (block S307)). Here, the first rotational speed is higher than the third rotational speed, and the third rotational speed is higher than the second rotational speed.

摘要翻译： 通过在基板2的表面保持预处理液体的状态下以第一转速旋转基板2，将电镀液供给到基板2上进行液体位移（液体移位处理（方框S305）） 。 然后，通过停止基板2的旋转或者在连续地将电镀液体供给到基板2上的同时以第二转速旋转基板2，在基板2上形成初始膜（保温处理（方框S306））。 然后，在将电镀液体持续供给到基板2上（电镀膜生长处理（框S307））的同时，以第三转速旋转基板2，生长镀膜。 这里，第一转速高于第三转速，第三转速高于第二转速。

公开(公告)号：US09777379B2

公开(公告)日：2017-10-03

申请号：US14129698

申请日：2012-06-04

申请人： Yuichiro Inatomi ,  Takashi Tanaka ,  Mitsuaki Iwashita

发明人： Yuichiro Inatomi ,  Takashi Tanaka ,  Mitsuaki Iwashita

IPC分类号： B05D3/10 ,  C23C18/16 ,  C23C18/18

CPC分类号： C23C18/163 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/1655 ,  C23C18/1669 ,  C23C18/1675 ,  C23C18/1676 ,  C23C18/168 ,  C23C18/18 ,  C23C18/50 ,  H05K3/187 ,  H05K2203/0165 ,  H05K2203/072 ,  H05K2203/075

摘要： A plating apparatus can perform a plating process on an entire surface of a substrate uniformly. A plating apparatus 20 includes a substrate holding/rotating device 110 configured to hold and rotate a substrate 2; a discharging device 21 configured to discharge a plating liquid toward the substrate 2 held on the substrate holding/rotating device 110; and a controller 160 configured to control the substrate holding/rotating device 110 and the discharging device 21. Further, the discharging device 21 includes a first nozzle 40 having a multiple number of discharge openings 41 arranged in a radial direction of the substrate 2 or having a discharge opening 42 extended in the radial direction of the substrate 2; and a second nozzle 45 having a discharge opening 46 configured to be positioned closer to a central portion of the substrate 2 than the discharge opening of the first nozzle 40.

公开(公告)号：US08937014B2

公开(公告)日：2015-01-20

申请号：US13879175

申请日：2011-08-31

申请人： Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita

发明人： Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita

IPC分类号： H01L21/44 ,  H01L21/67 ,  C23C18/16 ,  H01L21/288

CPC分类号： H01L21/6723 ,  C23C18/1619 ,  C23C18/1653 ,  C23C18/1675 ,  C23C18/1676 ,  C23C18/168 ,  C23C18/50 ,  H01L21/288

摘要： A liquid treatment apparatus of continuously performing a plating process on multiple substrates includes a temperature controlling container for accommodating a plating liquid; a temperature controller for controlling a temperature of the plating liquid in the temperature controlling container; a holding unit for holding the substrates one by one at a preset position; a nozzle having a supply hole through which the temperature-controlled plating liquid in the temperature controlling container is discharged to a processing surface of the substrate; a pushing unit for pushing the temperature-controlled plating liquid in the temperature controlling container toward the supply hole of the nozzle; and a supply control unit for controlling a timing when the plating liquid is pushed by the pushing unit. The temperature controller controls the temperature of the plating liquid in the temperature controlling container based on the timing when the plating liquid is pushed by the pushing unit.

摘要翻译： 在多个基板上连续进行电镀处理的液体处理装置包括：容纳电镀液的温度控制容器; 温度控制器，用于控制温度控制容器中的电镀液的温度; 保持单元，用于将预定位置一个接一个地保持; 具有供给孔的喷嘴，所述温度控制容器中的所述温度控制电镀液通过所述供给孔排出到所述基板的处理面; 推压单元，用于将温度控制容器中的温度控制电镀液朝向喷嘴的供给孔推动; 以及供应控制单元，用于控制当推动单元推动电镀液体时的定时。 温度控制器基于由推动单元推动电镀液的时机，控制温度控制容器中的电镀液的温度。