公开(公告)号：US20100233865A1

公开(公告)日：2010-09-16

申请号：US12720831

申请日：2010-03-10

申请人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato

发明人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato

IPC分类号： H01L21/02

CPC分类号： H01L21/31604 ,  H01L21/3145 ,  H01L28/40

摘要： Provided is a semiconductor device manufacturing method for a capacitor having a dielectric film which can be formed into a thin film, can be formed at a low temperature, and has a readily controllable property. The manufacturing method includes: forming an oxide film or an oxynitride film on a conductor for serving as one electrode of a capacitor; forming, on the oxide film or the oxynitride film, a manganese oxide film for serving as a dielectric film of the capacitor; and forming, on the manganese oxide film, a conductive film for serving as the other electrode of the capacitor.

摘要翻译： 提供一种具有可形成为薄膜的电介质膜的电容器的半导体器件制造方法，可以在低温下形成，并具有容易控制的特性。 制造方法包括：在用作电容器的一个电极的导体上形成氧化膜或氮氧化物膜; 在氧化膜或氮氧化物膜上形成用作电容器的电介质膜的氧化锰膜; 在氧化锰膜上形成用作电容器的另一个电极的导电膜。

公开(公告)号：US20100210097A1

公开(公告)日：2010-08-19

申请号：US12706237

申请日：2010-02-16

申请人： Hiroshi Sato ,  Kenji Matsumoto ,  Hitoshi Itoh

发明人： Hiroshi Sato ,  Kenji Matsumoto ,  Hitoshi Itoh

IPC分类号： H01L21/28

CPC分类号： H01L21/28194 ,  H01L21/823857 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

摘要： Provided is a manufacturing method of a semiconductor device including a gate insulating film which can be formed into a thin film and of which film composition is easy to be controlled. The manufacturing method includes: forming a manganese oxide film for serving as a gate insulating film on a semiconductor substrate, on which a transistor is formed; forming a conductive film for serving as a gate electrode on the manganese oxide film; and forming a gate electrode and a gate insulating film by processing the conductive film and the manganese oxide film.

摘要翻译： 提供一种半导体器件的制造方法，其包括可以形成为薄膜并且易于控制膜组成的栅极绝缘膜。 制造方法包括：在形成有晶体管的半导体衬底上形成用作栅极绝缘膜的氧化锰膜; 在氧化锰膜上形成用作栅电极的导电膜; 以及通过处理导电膜和氧化锰膜形成栅电极和栅极绝缘膜。

公开(公告)号：US08865590B2

公开(公告)日：2014-10-21

申请号：US13378535

申请日：2010-06-16

申请人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hidenori Miyoshi ,  Shigetoshi Hosaka ,  Hiroshi Sato ,  Koji Neishi ,  Junichi Koike

发明人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hidenori Miyoshi ,  Shigetoshi Hosaka ,  Hiroshi Sato ,  Koji Neishi ,  Junichi Koike

IPC分类号： H01L21/00 ,  H01L21/768 ,  H01L21/3205 ,  H01L21/285 ,  H01L21/3105 ,  C23C16/40 ,  C23C16/02

CPC分类号： H01L21/76814 ,  C23C16/02 ,  C23C16/40 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/32051 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76867

摘要： A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant.

摘要翻译： 公开了一种成膜方法，其中在被处理物体上形成包含锰的薄膜，其表面上由低k膜构成并具有凹陷的绝缘层。 该方法包括亲水化步骤，其中绝缘层的表面被亲水化以使表面亲水，并且薄膜形成步骤通过进行成膜在亲水化绝缘层的表面上形成含有锰的薄膜 在亲水化绝缘层的表面上使用含锰材料气体的方法。 因此，在由具有低介电常数的低k膜构成的绝缘层的表面上有效地形成了包含锰的薄膜，例如MnO x膜。

公开(公告)号：US08247321B2

公开(公告)日：2012-08-21

申请号：US12864824

申请日：2009-01-20

申请人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato ,  Junichi Koike ,  Koji Neishi

发明人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato ,  Junichi Koike ,  Koji Neishi

IPC分类号： H01L21/4763

CPC分类号： C23C16/40 ,  C23C28/00 ,  C23C28/322 ,  C23C28/345 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76844

摘要： When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier film having an excellent step coverage can be formed and increase of a wiring resistance can be restrained. An oxide film on a surface of the lower copper wiring exposed to a bottom surface of the interlayer insulation film is reduced or edged so as to remove oxygen on the surface of the copper wiring. Then, by supplying an organic metal compound containing manganese and containing no oxygen, generation of manganese oxide as a self-forming barrier film is selectively allowed on an area containing oxygen, such as a sidewall of the recess and a surface of the interlayer insulation film, while generation of the manganese oxide is not allowed on the surface of the copper wiring. Thereafter, copper is embedded in the recess.

摘要翻译： 当在衬底上的层间绝缘膜的暴露表面上形成阻挡膜时，形成有形成在其中的凹部的层间绝缘膜和与下层中的金属布线电连接的金属布线形成在凹部 可以形成具有优异的台阶覆盖的阻挡膜，并且可以抑制布线电阻的增加。 暴露在层间绝缘膜的底面的下铜布线的表面上的氧化膜被还原或边缘化以去除铜布线表面上的氧。 然后，通过供给含有锰并且不含氧的有机金属化合物，在包含氧的区域，例如凹部的侧壁和层间绝缘膜的表面上，选择性地允许产生作为自形成阻挡膜的氧化锰 而在铜布线的表面上不允许生成氧化锰。 此后，铜嵌入凹槽中。

公开(公告)号：US08119510B2

公开(公告)日：2012-02-21

申请号：US12706237

申请日：2010-02-16

申请人： Hiroshi Sato ,  Kenji Matsumoto ,  Hitoshi Itoh

发明人： Hiroshi Sato ,  Kenji Matsumoto ,  Hitoshi Itoh

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205

CPC分类号： H01L21/28194 ,  H01L21/823857 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

摘要： Provided is a manufacturing method of a semiconductor device including a gate insulating film which can be formed into a thin film and of which film composition is easy to be controlled. The manufacturing method includes: forming a manganese oxide film for serving as a gate insulating film on a semiconductor substrate, on which a transistor is formed; forming a conductive film for serving as a gate electrode on the manganese oxide film; and forming a gate electrode and a gate insulating film by processing the conductive film and the manganese oxide film.

摘要翻译： 提供一种半导体器件的制造方法，其包括可以形成为薄膜并且易于控制膜组成的栅极绝缘膜。 制造方法包括：在形成有晶体管的半导体衬底上形成用作栅极绝缘膜的氧化锰膜; 在氧化锰膜上形成用作栅电极的导电膜; 以及通过处理导电膜和氧化锰膜形成栅电极和栅极绝缘膜。

公开(公告)号：US20110049718A1

公开(公告)日：2011-03-03

申请号：US12864824

申请日：2009-01-20

申请人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato ,  Junichi Koike ,  Koji Neishi

发明人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato ,  Junichi Koike ,  Koji Neishi

IPC分类号： H01L23/48 ,  H01L21/768 ,  B05C13/02

CPC分类号： C23C16/40 ,  C23C28/00 ,  C23C28/322 ,  C23C28/345 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76844

摘要： When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier film having an excellent step coverage can be formed and increase of a wiring resistance can be restrained. An oxide film on a surface of the lower copper wiring exposed to a bottom surface of the interlayer insulation film is reduced or edged so as to remove oxygen on the surface of the copper wiring. Then, by supplying an organic metal compound containing manganese and containing no oxygen, generation of manganese oxide as a self-forming barrier film is selectively allowed on an area containing oxygen, such as a sidewall of the recess and a surface of the interlayer insulation film, while generation of the manganese oxide is not allowed on the surface of the copper wiring. Thereafter, copper is embedded in the recess.

摘要翻译： 当在衬底上的层间绝缘膜的暴露表面上形成阻挡膜时，形成有形成在其中的凹部的层间绝缘膜和与下层中的金属布线电连接的金属布线形成在凹部 可以形成具有优异的台阶覆盖的阻挡膜，并且可以抑制布线电阻的增加。 暴露在层间绝缘膜的底面的下铜布线的表面上的氧化膜被还原或边缘化以去除铜布线表面上的氧。 然后，通过供给含有锰并且不含氧的有机金属化合物，在包含氧的区域，例如凹部的侧壁和层间绝缘膜的表面上，选择性地允许产生作为自形成阻挡膜的氧化锰 而在铜布线的表面上不允许生成氧化锰。 此后，铜嵌入凹槽中。

公开(公告)号：US08955851B2

公开(公告)日：2015-02-17

申请号：US12312668

申请日：2007-11-05

申请人： Kenji Matsumoto ,  Kazuhiro Takahashi

发明人： Kenji Matsumoto ,  Kazuhiro Takahashi

IPC分类号： F16J15/10 ,  F16B43/00 ,  F16B41/00

CPC分类号： F16B43/001 ,  F16B41/002 ,  F16J15/104 ,  Y10S277/937

摘要： A metal annular gasket comprising an annular metal base plate; a compound layer integrally laminated on both surfaces of the annular metal base plate, the compound layer being made of synthetic resin or a rubber material mixed with a fiber material; and an annular seal layer having a circumferential covering portion which covers the inner circumferential edge of the annular metal plate and the inner circumferential edge of both compound layers, the compound layer being made of synthetic resin or a rubber material. The annular seal layer is formed such that the surface of the annular seal layer is so connected to the surfaces of the compound layer as to provide smooth transition in its thickness direction.

摘要翻译： 一种金属环形垫片，包括环形金属基板; 在环状金属基板的两面一体层叠的复合层，由合成树脂制成的复合层或与纤维材料混合的橡胶材料; 以及环状密封层，其具有覆盖环状金属板的内周缘和两个复合层的内周边缘的周向覆盖部分，复合层由合成树脂或橡胶材料制成。 环形密封层形成为使得环形密封层的表面与化合物层的表面连接，以在其厚度方向上提供平滑的过渡。

公开(公告)号：US08859421B2

公开(公告)日：2014-10-14

申请号：US13267227

申请日：2011-10-06

申请人： Koji Neishi ,  Junichi Koike ,  Kenji Matsumoto

发明人： Koji Neishi ,  Junichi Koike ,  Kenji Matsumoto

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/532 ,  H01L21/768 ,  C23C16/40

CPC分类号： H01L23/53238 ,  C23C16/40 ,  C23C16/401 ,  C23C16/406 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76867 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： There is provided a manganese oxide film forming method capable of forming a manganese oxide film having high adhesivity to Cu. In the manganese oxide film forming method, a manganese oxide film is formed on an oxide by supplying a manganese-containing gas onto the oxide. A film forming temperature for forming the manganese oxide film is set to be equal to or higher than about 100° C. and lower than about 400° C.

摘要翻译： 提供了能够形成对Cu具有高粘合性的氧化锰膜的氧化锰膜形成方法。 在氧化锰膜形成方法中，通过向氧化物供给含锰气体，在氧化物上形成氧化锰膜。 用于形成氧化锰膜的成膜温度设定为等于或高于约100℃且低于约400℃

公开(公告)号：US20140204592A1

公开(公告)日：2014-07-24

申请号：US14237983

申请日：2012-08-13

申请人： Junji Miyashita ,  Yasuaki Kayanuma ,  Kenji Matsumoto

发明人： Junji Miyashita ,  Yasuaki Kayanuma ,  Kenji Matsumoto

IPC分类号： F21V5/04

CPC分类号： F21V5/045 ,  F21K9/20 ,  F21K9/69 ,  F21S41/141 ,  F21S41/143 ,  F21S41/275 ,  F21S43/14 ,  F21S43/26 ,  F21S43/315 ,  F21V5/002 ,  F21V5/04 ,  F21V7/0091 ,  F21Y2115/10 ,  F24S23/31 ,  G02B3/08 ,  G02B5/1866 ,  G02B5/188 ,  G02B19/0028 ,  G02B19/0061

摘要： A lens member includes a light-incident side; a light-exit side that is opposite to the light-incident side, a Fresnel lens arranged on a center axis that passes through a center of the light-incident side, and a diffraction grating structure arranged around a periphery of the Fresnel lens and having a center through which the center axis passes. Also, it is disclosed that the Fresnel lens may include a first Fresnel lens and a second Fresnel lens, the first Fresnel lens includes annular prisms that are divided from a convex lens and having a center through which the center axis of the light-incident side passes, and the second Fresnel lens includes annular prisms that are divided from a TIR lens and arranged around the periphery of the first Fresnel lens, centering around the center axis of the light-incident side.

摘要翻译： 透镜构件包括光入射侧; 与光入射侧相反的光出射侧，配置在通过光入射侧的中心的中心轴上的菲涅耳透镜，以及绕着菲涅耳透镜的周围配置的衍射光栅结构，具有 中心轴通过的中心。 此外，公开了菲涅耳透镜可以包括第一菲涅尔透镜和第二菲涅尔透镜，第一菲涅耳透镜包括从凸透镜分离并具有中心的环形棱镜，光入射侧的中心轴穿过该中心 并且第二菲涅尔透镜包括从TIR透镜分割并围绕第一菲涅耳透镜的周围以围绕光入射侧的中心轴线为中心布置的环形棱镜。

公开(公告)号：US20130136859A1

公开(公告)日：2013-05-30

申请号：US13807079

申请日：2011-06-24

申请人： Kenji Matsumoto ,  Shigetoshi Hosaka ,  Hitoshi Itoh

发明人： Kenji Matsumoto ,  Shigetoshi Hosaka ,  Hitoshi Itoh

IPC分类号： B05D5/12

CPC分类号： B05D5/12 ,  C23C16/40 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76861 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： A film forming method performs a film forming process on a target object having on a surface thereof an insulating layer. The film forming method includes a first thin film forming step of forming a first thin film containing a first metal, an oxidation step of forming an oxide film by oxidizing the first thin film, and a second thin film forming step of forming a second thin film containing a second metal on the oxide film.

摘要翻译： 成膜方法对其表面上具有绝缘层的目标物体进行成膜处理。 该成膜方法包括：形成含有第一金属的第一薄膜的第一薄膜形成步骤，通过氧化第一薄膜形成氧化膜的氧化步骤和形成第二薄膜的第二薄膜形成步骤 在氧化膜上含有第二金属。