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    Multiple thermal annealing method for forming antiferromagnetic exchange biased magnetoresistive (MR) sensor element
    11.
    发明授权
    Multiple thermal annealing method for forming antiferromagnetic exchange biased magnetoresistive (MR) sensor element 失效
    用于形成反铁磁交换偏磁电阻（MR）传感器元件的多重热退火方法

    公开(公告)号：US06322640B1

    公开(公告)日：2001-11-27

    申请号：US09489969

    申请日：2000-01-24

    申请人： Rongfu Xiao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang ,  Jei-Wei Chang ,  Cherng-Chyi Han ,  Kochan Ju

    发明人： Rongfu Xiao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang ,  Jei-Wei Chang ,  Cherng-Chyi Han ,  Kochan Ju

    IPC分类号： H01F4100

    CPC分类号： B82Y25/00 ,  B82Y40/00 ,  H01F10/3268 ,  H01F41/302 ,  H01L43/12 ,  Y10T29/49034

    摘要： A method for forming a magnetically biased magnetoresistive (MR) layer. There is first provided a substrate. There is then formed over the substrate a ferromagnetic magnetoresistive (MR) material layer. There is then forming contacting the ferromagnetic magnetoresistive (MR) material layer a magnetic material layer formed of a first crystalline phase, where the magnetic material layer is formed of a crystalline multiphasic magnetic material having the first crystalline phase which does not appreciably antiferromagnetically exchange couple with the ferromagnetic magnetoresistive (MR) material layer and a second crystalline phase which does appreciably antiferromagnetically exchange couple with the ferromagnetic magnetoresistive (MR) material layer. There is then annealed thermally while employing a first thermal annealing method employing an extrinsic magnetic bias field the magnetic material layer formed of the first crystalline phase to form a magnetically aligned magnetic material layer formed of the first crystalline phase. Finally, there is then annealed thermally while employing a second thermal annealing method without employing an extrinsic magnetic bias field the magnetically aligned magnetic material layer formed of the first crystalline phase to form an antiferromagnetically coupled magnetically aligned magnetic material layer formed of the second crystalline phase. The method may be employed for forming non-parallel antiferromagnetically biased multiple magnetoresistive (MR) layer magnetoresistive (MR) sensor elements while employing a single antiferromagnetic material.

    摘要翻译： 一种用于形成磁偏置磁阻（MR）层的方法。 首先提供基板。 然后在衬底上形成铁磁磁阻（MR）材料层。 然后，形成使铁磁性磁阻（MR）材料层与由第一结晶相形成的磁性材料层接触，其中，磁性材料层由结晶多相磁性材料形成，该结晶多相磁性材料具有不明显地反铁磁性交换耦合的第一结晶相 铁磁磁阻（MR）材料层和第二结晶相，其明显地与铁磁性磁阻（MR）材料层反铁磁交换耦合。 然后在使用由第一结晶相形成的磁性材料层的外部磁偏置场的第一热退火方法进行退火，形成由第一结晶相形成的磁性取向的磁性材料层。 最后，在不使用由第一结晶相形成的磁性取向的磁性材料层的外部磁偏置场的情况下，采用第二热退火方法进行退火，形成由第二结晶相形成的反铁磁耦合的磁性取向的磁性材料层。 该方法可以用于在使用单个反铁磁材料的同时形成非平行的反铁磁偏振多磁阻（MR）层磁阻（MR）传感器元件。

    Junction stability and yield for spin valve heads
    12.
    发明授权
    Junction stability and yield for spin valve heads 失效
    自旋阀头的结点稳定性和产量

    公开(公告)号：US06879474B2

    公开(公告)日：2005-04-12

    申请号：US10718878

    申请日：2003-11-21

    申请人： Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Moris Dovek ,  Po-Kang Wang ,  Mao-Min Chen

    发明人： Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Moris Dovek ,  Po-Kang Wang ,  Mao-Min Chen

    IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01L43/08 ,  H01L43/12

    CPC分类号： B82Y10/00 ,  G11B5/313 ,  G11B5/3903 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

    摘要： The possibility of shorting between a spin valve and its underlying magnetic shield layer can be largely eliminated by choosing the bottom spin valve structure. However, doing so causes the hard longitudinal bias that is standard for all such devices to degrade. The present invention overcomes this problem by inserting a thin NiCr, Ni, Fe, or Cr layer between the antiferromagnetic layer and the longitudinal bias layers. This provides a smoother surface for the bias layers to be deposited onto, thereby removing structural distortions to the longitudinal bias layer that would otherwise be present. A process for manufacturing the structure is also described.

    摘要翻译： 通过选择底部自旋阀结构，可以大大消除自旋阀与其下面的磁屏蔽层之间短路的可能性。 然而，这样做会导致所有这些设备的标准硬的纵向偏差降级。 本发明通过在反铁磁层和纵向偏置层之间插入薄的NiCr，Ni，Fe或Cr层来克服这个问题。 这为偏压层沉积提供了更平滑的表面，从而消除了否则将存在的纵向偏置层的结构变形。 还描述了用于制造该结构的方法。

    Stitched write head design having a sunken shared pole
    13.
    发明授权
    Stitched write head design having a sunken shared pole 失效
    拼接写头设计有一个凹陷的共享极点

    公开(公告)号：US06469875B1

    公开(公告)日：2002-10-22

    申请号：US09525672

    申请日：2000-03-15

    申请人： Mao-Min Chen ,  Po-Kang Wang ,  Cherng-Chyi Han

    发明人： Mao-Min Chen ,  Po-Kang Wang ,  Cherng-Chyi Han

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49048

    摘要： A structure and a method for a stitched write head having a sunken share pole. The method includes forming a bottom coil dielectric layer over the first half shared pole. Coils are formed over the bottom coil dielectric layer. Next, second half shared poles (P1) are formed over the first half shared pole (S2). We form a top coil dielectric layer over the structure. In a key step, we chemical-mechanical polish the top coil dielectric layer. A write gap layer (WG) is formed over the front second half shared pole and the top coil dielectric layer over the coils. An upper pole (P3) and hard mask are formed over the write gap layer. We etch the write gap layer and the second half shared pole (P1) using the upper pole as an etch mask to remove a portion of the second half shared pole (P1) adjacent to the write gap layer thereby forming a partially trimmed pole.

    摘要翻译： 一种具有凹陷的共享极的缝合写头的结构和方法。 该方法包括在第一半共享极上形成底部线圈电介质层。 线圈形成在底部线圈电介质层上。 接下来，在第一半共享极（S2）上形成第二半共享极（P1）。 我们在结构上形成顶层线圈介电层。 在关键步骤中，我们化学机械抛光顶层线圈介电层。 写入间隙层（WG）形成在线圈上的前第二半共享极和顶部线圈电介质层上。 在写间隙层上形成上极（P3）和硬掩模。 我们使用上极蚀刻写间隙层和第二半共享极（P1）作为蚀刻掩模，以去除与写间隙层相邻的第二半共享极（P1）的一部分，从而形成部分修整的极。

    Ion implantation method for fabricating magnetoresistive (MR) sensor element
    14.
    发明授权
    Ion implantation method for fabricating magnetoresistive (MR) sensor element 失效
    用于制造磁阻（MR）传感器元件的离子注入方法

    公开(公告)号：US06383574B1

    公开(公告)日：2002-05-07

    申请号：US09360118

    申请日：1999-07-23

    申请人： Cherng-Chyi Han ,  Rong-Fu Xiao ,  Mao-Min Chen ,  Po-Kang Wang

    发明人： Cherng-Chyi Han ,  Rong-Fu Xiao ,  Mao-Min Chen ,  Po-Kang Wang

    IPC分类号： B05D500

    CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/48 ,  G11B5/3163 ,  H01F41/302

    摘要： A method for forming a magnetoresistive (MR) layer first employs a substrate over which is formed a magnetoresistive (MR) layer formed of a magnetoresistive (MR) material. There is then ion implanted selectively, while employing an ion implant method, the magnetoresistive (MR) layer to form: (1) an ion implanted portion of the magnetoresistive (MR) layer formed of an ion implanted magnetoresistive (MR) material; and (2) an adjoining non ion implanted portion of the magnetoresistive (MR) layer formed of the magnetoresistive (MR) material, where the ion implanted magnetoresistive (MR) material is a non magnetoresistive (MR) material. The method may be employed for forming within magnetoresistive (MR) sensor elements magnetoresistive (MR) layers with enhanced dimensional uniformity, and in particular enhanced overlay dimensional uniformity.

    摘要翻译： 形成磁阻（MR）层的方法首先采用形成由磁阻（MR）材料形成的磁阻（MR）层的衬底。 然后选择性地离子注入，同时采用离子注入法，磁阻（MR）层形成：（1）由离子注入的磁阻（MR）材料形成的磁阻（MR）层的离子注入部分; 和（2）由磁阻（MR）材料形成的磁阻（MR）层的邻接非离子注入部分，其中离子注入磁阻（MR）材料是非磁阻（MR）材料。 该方法可以用于在具有增强的尺寸均匀性的磁阻（MR）传感器元件磁阻（MR）层内形成，特别是增强的覆盖尺寸均匀性。

    Method to make a stitched writer for a giant magneto-resistive head
    16.
    发明授权
    Method to make a stitched writer for a giant magneto-resistive head 失效
    为巨型磁阻头制作缝合笔记的方法

    公开(公告)号：US06469874B1

    公开(公告)日：2002-10-22

    申请号：US09523993

    申请日：2000-03-13

    申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po-Kang Wang ,  Moris Musa Dovek ,  Gene Michael Sandler ,  Jeu-Wei C. Koo

    发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po-Kang Wang ,  Moris Musa Dovek ,  Gene Michael Sandler ,  Jeu-Wei C. Koo

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49046

    摘要： A high data-rate stitched pole inductive magnetic write head incorporating a non-magnetic spacer layer and a magnetic pole yoke that is recessed from the magnetic pole tip. Said spacer layer is deposited as part of a self-aligned, patterned photoresist process, wherein the spacer layer is deposited first and the P2 portion of the upper pole assembly is then plated over it to form the pole tip configuration. Increasing the thickness of the spacer layer, while keeping it within a specified tolerance range, allows the upper stitched P3 portion of the pole piece to be recessed relative to the tip of P2. The spacer layer shortens throat height, reduces saturation write current, and improves overwrite and side erasure performance.

    摘要翻译： 包含非磁性间隔层的高数据速率缝合磁极感应磁性写入头和从磁极尖端凹入的磁极轭。 所述间隔层沉积为自对准的图案化光刻胶工艺的一部分，其中首先沉积间隔层，然后将上极组件的P2部分电镀在其上以形成极尖构型。 增加间隔层的厚度，同时将其保持在规定的公差范围内，允许极片的上缝合P3部分相对于P2的尖端凹入。 间隔层缩短喉部高度，降低饱和写入电流，并提高覆盖和侧面擦除性能。

    Magnetic write head having a wider trailing edge pole structure
    17.
    发明授权
    Magnetic write head having a wider trailing edge pole structure 失效
    具有较宽后缘极结构的磁写头

    公开(公告)号：US07382577B2

    公开(公告)日：2008-06-03

    申请号：US11229160

    申请日：2005-09-16

    申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po Kang Wang ,  Fenglin Liu

    发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po Kang Wang ,  Fenglin Liu

    IPC分类号： G11B5/39 ,  G11B5/187

    CPC分类号： G11B5/3163 ,  G11B5/3116 ,  G11B5/3967 ,  Y10T29/49032

    摘要： A trimmed upper pole piece for a magnetic write head, said pole piece having a tapered profile that is widest at its trailing edge. Such a pole piece is capable of writing narrow tracks with sharply and well defined patterns and minimal overwriting of adjacent tracks. The necessary taper is produced by using NiCr, NiFeCr, Rh or Ru as write gap filling materials which have an etch rate which is substantially equal to the etch rate of the other layers forming the pole piece and are highly corrosion resistant. As a result, the write gap does not protrude to mask the effects of the ion-beam etch used to form the taper.

    摘要翻译： 用于磁写头的经修剪的上极片，所述极片具有在其后缘处最宽的锥形轮廓。 这样的极片能够以清晰明确的图案和相邻轨迹的最小重写来写入窄轨道。 通过使用NiCr，NiFeCr，Rh或Ru作为写入间隙填充材料产生必要的锥度，其具有基本上等于形成极片的其它层的蚀刻速率的蚀刻速率并且具有高耐腐蚀性。 结果，写入间隙不突出以掩盖用于形成锥形的离子束蚀刻的效果。

    Planarizing process
    19.
    发明授权
    Planarizing process 有权
    平面化过程

    公开(公告)号：US07047625B2

    公开(公告)日：2006-05-23

    申请号：US10647762

    申请日：2003-08-25

    申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po Kang Wang

    发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po Kang Wang

    IPC分类号： G11B5/127 ,  H04R31/00

    CPC分类号： G11B5/295 ,  G11B5/11 ,  G11B5/17 ,  G11B5/1871 ,  Y10T29/49002 ,  Y10T29/49021 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： Present processes used for planarizing a cavity filled with a coil and hard baked photoresist require that a significant amount of the thickness of the coils be removed. This increases the DC resistance of the coil. In the present invention, cavity and coil are overfilled with photoresist which is then hard baked. A layer of alumina is then deposited onto the surface of the excess photoresist, following which CMP is initiated. The presence of the alumina serves to stabilize the photoresist so that it does not delaminate. CMP is terminated as soon as the coils are exposed, allowing their full thickness to be retained and resulting in minimum DC resistance.

    摘要翻译： 用于平坦化填充有线圈和硬烘烤光致抗蚀剂的空腔的现有方法需要去除大量的线圈厚度。 这增加了线圈的直流电阻。 在本发明中，腔和线圈被光致抗蚀剂过度填充，然后被硬烘烤。 然后将一层氧化铝沉积到多余光致抗蚀剂的表面上，随后开始CMP。 氧化铝的存在用于使光致抗蚀剂稳定，使其不分层。 一旦线圈被暴露，CMP就被终止，允许其保持其全部厚度并导致最小的直流电阻。

    Method to make a wider trailing pole structure by self-aligned pole trim process
    20.
    发明授权
    Method to make a wider trailing pole structure by self-aligned pole trim process 失效
    通过自对准极修剪工艺制作更宽的尾柱结构的方法

    公开(公告)号：US06960281B2

    公开(公告)日：2005-11-01

    申请号：US10394098

    申请日：2003-03-21

    申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po Kang Wang ,  Fenglin Liu

    发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po Kang Wang ,  Fenglin Liu

    IPC分类号： G11B5/31 ,  G11B5/39 ,  C23C14/34

    CPC分类号： G11B5/3163 ,  G11B5/3116 ,  G11B5/3967 ,  Y10T29/49032

    摘要： A method for forming a trimmed upper pole piece for a magnetic write head, said pole piece having a tapered profile that is widest at its trailing edge. Such a pole piece is capable of writing narrow tracks with sharply and well defined patterns and minimal overwriting of adjacent tracks. The present method produces the necessary taper by using NiCr, NiFeCr, Rh or Ru as write gap filling materials which have an etch rate which is substantially equal to the etch rate of the other layers forming the pole piece and are highly corrosion resistant. As a result, the write gap does not protrude to mask the effects of the ion-beam etch used to form the taper.

    摘要翻译： 一种用于形成用于磁性写入头的修整的上极片的方法，所述极片具有在其后缘处最宽的锥形轮廓。 这样的极片能够以清晰明确的图案和相邻轨迹的最小重写来写入窄轨道。 本方法通过使用NiCr，NiFeCr，Rh或Ru作为写入间隙填充材料产生必要的锥度，其具有基本上等于形成极片的其它层的蚀刻速率的蚀刻速率，并且具有高耐腐蚀性。 结果，写入间隙不突出以掩盖用于形成锥形的离子束蚀刻的效果。