公开(公告)号：US5665570A

公开(公告)日：1997-09-09

申请号：US384545

申请日：1995-02-07

申请人： Hideo Yamagata ,  Shigezo Udaka ,  Yasushi Inoue ,  Hiroko Tada ,  Susumu Iwasa

发明人： Hideo Yamagata ,  Shigezo Udaka ,  Yasushi Inoue ,  Hiroko Tada ,  Susumu Iwasa

IPC分类号： C07K16/00 ,  C07K16/18 ,  C07K16/40 ,  C12N15/13 ,  C12N15/75 ,  C12P21/08 ,  C07H21/04 ,  C12N1/20

CPC分类号： C12N15/75 ,  C07K16/00 ,  C07K16/18 ,  C07K16/40 ,  C07K2319/00

摘要： A bacterium of the genus Bacillus is transformed by introducing a vector incorporating DNA encoding an antibody; the resulting transformant is cultivated in a medium to produce and accumulate the antibody in an active form in the culture liquid. According to this method, a recombinant antibody can be easily produced in an active form in large amounts, owing to success in secretory expression using a bacterium of the genus Bacillus.

摘要翻译： 通过引入含有编码抗体的DNA的载体来转化芽孢杆菌属的细菌; 将所得转化体在培养基中培养，以活性形式产生并积累培养液中的抗体。 根据该方法，由于使用芽孢杆菌属的细菌的分泌表达的成功，重组抗体可以大量容易地以活性形式产生。

公开(公告)号：US20120081638A1

公开(公告)日：2012-04-05

申请号：US13242416

申请日：2011-09-23

申请人： Hiroshi Yumoto ,  Shuji Yoneda ,  Yusuke Murakawa ,  Hideo Yamagata

发明人： Hiroshi Yumoto ,  Shuji Yoneda ,  Yusuke Murakawa ,  Hideo Yamagata

IPC分类号： G02F1/1333 ,  G01J1/44 ,  H01L31/18 ,  H01L31/102

CPC分类号： H01L31/103 ,  G01J1/44 ,  G02F2001/13312

摘要： A light sensing element includes a photodiode formed on a semiconductor substrate surface, and a laminated structure formed on the photodiode, wherein the laminated structure includes a first layer formed of a silicon oxide film, a second layer formed on the first layer and formed of a silicon nitride film, and a third layer formed on the second layer and formed of a polysilicon film.

摘要翻译： 光敏元件包括形成在半导体衬底表面上的光电二极管和形成在光电二极管上的叠层结构，其中层压结构包括由氧化硅膜形成的第一层，形成在第一层上的第二层， 氮化硅膜和形成在第二层上并由多晶硅膜形成的第三层。

公开(公告)号：US20070287268A1

公开(公告)日：2007-12-13

申请号：US11747575

申请日：2007-05-11

申请人： Hideo Yamagata ,  Takeyoshi Koumoto ,  Kenji Atsuumi ,  Yoichi Negoro ,  Tatsushiro Hirata ,  Takashi Noguchi

发明人： Hideo Yamagata ,  Takeyoshi Koumoto ,  Kenji Atsuumi ,  Yoichi Negoro ,  Tatsushiro Hirata ,  Takashi Noguchi

IPC分类号： H01L21/322

CPC分类号： H01L21/02505 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/66242

摘要： In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a silicon raw material gas partial pressure increases in proportion to a time to thereby deposit a first semiconductor layer of a silicon layer on the semiconductor substrate under reduced pressure, a second step of introducing silicon raw material gas and germanium raw material gas into the reaction furnace in such a manner that a desired germanium concentration may be obtained to thereby deposit a second semiconductor layer of a silicon-germanium mixed crystal layer on the first semiconductor layer under reduced pressure and a third step of introducing silicon raw material gas into the reaction furnace under reduced pressure to thereby deposit a third semiconductor layer of a silicon layer on the second semiconductor layer. Thus, there can be obtained a semiconductor layer in which a misfit dislocation can be improved.

摘要翻译： 在半导体基板上沉积硅 - 锗混晶层的气相生长方法中，气相生长方法包括将硅原料气体引入反应炉的第一步骤，即将硅 原料气体分压与时间成比例地增加，从而在半导体衬底上沉积硅层的第一半导体层减压，第二步是将硅原料气体和锗原料气体引入反应炉中 可以获得期望的锗浓度，从而在减压下在第一半导体层上沉积硅 - 锗混合晶体层的第二半导体层，并且在减压下将硅原料气体引入反应炉中的第三步骤 从而在第二半导体层上沉积硅层的第三半导体层。 因此，可以获得其中可以提高失配位错的半导体层。

公开(公告)号：US06562736B2

公开(公告)日：2003-05-13

申请号：US09951159

申请日：2001-09-12

申请人： Shusaku Yanagawa ,  Hideo Yamagata ,  Takeyoshi Koumoto

发明人： Shusaku Yanagawa ,  Hideo Yamagata ,  Takeyoshi Koumoto

IPC分类号： H01L21477

CPC分类号： H01L21/268 ,  H01L21/2686 ,  H01L29/66242

摘要： Disclosed herein is a manufacturing method for a semiconductor device, including heat treatment by light irradiation to a substrate having a base semiconductor and a semiconductor layer formed on the base semiconductor, the semiconductor layer being different in kind from the base semiconductor, wherein the temperature of the substrate is once maintained at an intermediate temperature between a starting temperature and an attainable maximum temperature, or the temperature rise rate from the starting temperature to the intermediate temperature is set smaller than that from the intermediate temperature to the attainable maximum temperature. Accordingly, in the lamp annealing after heteroepitaxial growth, the generation of dislocations in the heteroepitaxial layer can be reduced.

公开(公告)号：US5411886A

公开(公告)日：1995-05-02

申请号：US112630

申请日：1993-08-27

申请人： Shigezo Udaka ,  Kenji Sakaguchi ,  Hideo Yamagata ,  Koen Dekker

发明人： Shigezo Udaka ,  Kenji Sakaguchi ,  Hideo Yamagata ,  Koen Dekker

IPC分类号： C12N9/90 ,  C12N1/19 ,  C12N9/92 ,  C12N15/09 ,  C12N15/61 ,  C12P19/24 ,  C12R1/01 ,  C12R1/08 ,  C12R1/125 ,  C12R1/465 ,  C12R1/865 ,  C12N1/21 ,  C12N15/63

CPC分类号： C12N9/92 ,  C12P19/24

摘要： A xylose isomerase gene from Thermus bacteria, such as Thermos aquaticus (ATCC 27634) and a gene having 60% or more of homology to the nucleotide sequence of Thermus aquaticus xylose isomerase gene of FIG. 1-3. A xylose isomerase from Thermus aquaticus characterized in that the xylose isomerase has the optimal pH of about 7, the stable pH range of from about 6 to 8.5, the optimal temperature of about 95.degree. C. and the molecular weight of about 44,000, and is stabilized with manganese or magnesium. A process for preparing a xylose isomerase comprising transforming a microorganism with a plasmid containing the above gene and a promoter, culturing the transformed microorganism and harvesting the produced xylose isomerase. A process for preparing fructose comprising isomerization of glucose to fructose in the presence of the above xylose isomerase.

摘要翻译： 来自Thermus细菌的木糖异构酶基因，例如Thermos aquaticus（ATCC 27634）和与图1的Thermus aquaticus木糖异构酶基因的核苷酸序列具有60％以上同源性的基因。 1-3。 水生栖热菌属的木糖异构酶，其特征在于木糖异构酶具有约7的最佳pH，约6至8.5的稳定pH范围，约95℃的最佳温度和约44,000的分子量，并且为 用锰或镁稳定。 一种制备木糖异构酶的方法，包括用含有上述基因的质粒和启动子转化微生物，培养转化的微生物并收获所产生的木糖异构酶。 一种制备果糖的方法，包括在上述木糖异构酶存在下将葡萄糖异构化成果糖。