-
公开(公告)号：US08487364B2
公开(公告)日：2013-07-16
申请号：US12792378
申请日：2010-06-02
IPC分类号： H01L29/792 , H01L21/3205 , H01L21/4763
摘要： A nonvolatile semiconductor memory device according to embodiment includes: a semiconductor substrate having an upper portion being partitioned into a plurality of semiconductor portions extending in a first direction; a charge storage film provided on the semiconductor portion; a word-line electrode provided on the semiconductor substrate and extending in a second direction intersecting with the first direction; and a pair of selection gate electrodes provided on both sides of the word-line electrode in the first direction on the semiconductor substrate and extending in the second direction, a shortest distance between a corner portion of each of the semiconductor portions and each of the selection gate electrodes being longer than a shortest distance between the corner portion of the semiconductor portion and the word-line electrode in a cross section parallel to the second direction.
-
公开(公告)号：US20090001444A1
公开(公告)日：2009-01-01
申请号：US12132450
申请日：2008-06-03
IPC分类号： H01L29/788 , H01L21/28
CPC分类号： H01L27/115 , H01L21/28273 , H01L27/11521 , H01L29/42324 , H01L29/66825 , H01L29/7883
摘要： This disclosure concerns a semiconductor memory device comprising a plurality of gate electrodes extending to a first direction; a reinforced insulation film extending to a second direction crossing the first direction, and connected to the adjacent gate electrodes; and an interlayer dielectric film provided between the adjacent gate electrodes, and having a void inside.
摘要翻译： 本公开涉及包括延伸到第一方向的多个栅电极的半导体存储器件; 加强绝缘膜延伸到与第一方向交叉的第二方向，并且连接到相邻的栅电极; 以及设置在相邻的栅电极之间并且内部具有空隙的层间绝缘膜。
-
公开(公告)号：US20080246168A1
公开(公告)日：2008-10-09
申请号：US12059280
申请日：2008-03-31
申请人： Masaru Kito , Hideaki Aochi , Takayuki Okamura
发明人： Masaru Kito , Hideaki Aochi , Takayuki Okamura
IPC分类号： H01L21/308 , H01L23/52
CPC分类号： H01L21/3086 , H01L21/3088 , H01L27/105 , H01L27/1052 , H01L27/11524
摘要： A semiconductor device comprises a semiconductor layer including a plurality of paralleled linear straight sections extending in a first direction. The layer also includes a plurality of connecting sections each having a width in the first direction sufficient to form a wire-connectable contact therein and arranged to connect between adjacent ones of the straight sections in a second direction. The connecting sections have respective ends formed aligned with a first straight line parallel to the second direction.
摘要翻译： 半导体器件包括半导体层，该半导体层包括在第一方向上延伸的多个平行的线性直线部分。 该层还包括多个连接部分，每个连接部分具有在第一方向上的宽度，足以在其中形成可接线的触点，并且布置成在第二方向上在相邻的直部分之间连接。 连接部具有与平行于第二方向的第一直线对准的各自的端部。
-
公开(公告)号：US08907318B2
公开(公告)日：2014-12-09
申请号：US13665681
申请日：2012-10-31
CPC分类号： G11C13/0004 , B82Y10/00 , G11C13/0007 , G11C13/003 , G11C13/025 , G11C2013/0073 , G11C2213/71 , G11C2213/72 , G11C2213/76 , H01L27/2409 , H01L27/2418 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/1233
摘要： A resistance change memory includes a first conductive line extending in a first direction, a second conductive line extending in a second direction which is crossed to the first direction, a cell unit including a memory element and a rectifying element connected in series between the first and second conductive lines, and a control circuit which is connected to both of the first and second conductive lines. The control circuit controls a voltage to change a resistance of the memory element between first and second values reversibly. The rectifying element is a diode including an anode layer, a cathode layer and an insulating layer therebetween.
摘要翻译： 电阻变化存储器包括沿第一方向延伸的第一导电线，沿与第一方向交叉的第二方向延伸的第二导线，包括存储元件和整流元件的电池单元，串联连接在第一和第 第二导线，以及连接到第一和第二导线两者的控制电路。 控制电路控制电压以可逆地改变第一和第二值之间的存储元件的电阻。 整流元件是包括阳极层，阴极层和绝缘层的二极管。
-
公开(公告)号：US08791552B2
公开(公告)日：2014-07-29
申请号：US13431330
申请日：2012-03-27
IPC分类号： H01L29/66 , H01L29/868 , H01L27/102 , H01L27/24 , H01L45/00
CPC分类号： H01L27/1021 , H01L27/2409 , H01L27/2481 , H01L29/868 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1675
摘要： A semiconductor memory device includes a cell array layer including a first wire, a memory cell stacked on the first wire, and a second wire formed on the memory cell. The memory cell includes a variable resistance element and a current control element The current control element includes a first conductivity-type semiconductor into which a first impurity is doped, an i-type semiconductor in contact with the first conductivity-type semiconductor, a second conductivity-type semiconductor into which a second impurity is doped, and an impact ionization acceleration unit being formed between the i-type semiconductor and one of the first conductivity-type semiconductor and the second conductivity-type semiconductor.
摘要翻译： 一种半导体存储器件包括：单元阵列层，包括第一布线，堆叠在第一布线上的存储单元和形成在存储单元上的第二布线。 存储单元包括可变电阻元件和电流控制元件电流控制元件包括掺杂有第一杂质的第一导电型半导体，与第一导电型半导体接触的i型半导体，第二导电型 型半导体，其中第二杂质被掺杂到其中，并且冲击电离加速单元形成在i型半导体与第一导电型半导体和第二导电型半导体之一之间。
-
公开(公告)号：US20130070517A1
公开(公告)日：2013-03-21
申请号：US13665681
申请日：2012-10-31
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , B82Y10/00 , G11C13/0007 , G11C13/003 , G11C13/025 , G11C2013/0073 , G11C2213/71 , G11C2213/72 , G11C2213/76 , H01L27/2409 , H01L27/2418 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/1233
摘要： A resistance change memory includes a first conductive line extending in a first direction, a second conductive line extending in a second direction which is crossed to the first direction, a cell unit including a memory element and a rectifying element connected in series between the first and second conductive lines, and a control circuit which is connected to both of the first and second conductive lines. The control circuit controls a voltage to change a resistance of the memory element between first and second values reversibly. The rectifying element is a diode including an anode layer, a cathode layer and an insulating layer therebetween.
摘要翻译： 电阻变化存储器包括沿第一方向延伸的第一导电线，在与第一方向交叉的第二方向上延伸的第二导线，包括存储元件和整流元件的电池单元，串联连接在第一和第 第二导线，以及连接到第一和第二导线两者的控制电路。 控制电路控制电压以可逆地改变第一和第二值之间的存储元件的电阻。 整流元件是包括阳极层，阴极层和绝缘层的二极管。
-
公开(公告)号：US07737041B2
公开(公告)日：2010-06-15
申请号：US12059280
申请日：2008-03-31
申请人： Masaru Kito , Hideaki Aochi , Takayuki Okamura
发明人： Masaru Kito , Hideaki Aochi , Takayuki Okamura
IPC分类号： H01L21/302
CPC分类号： H01L21/3086 , H01L21/3088 , H01L27/105 , H01L27/1052 , H01L27/11524
摘要： A semiconductor device comprises a semiconductor layer including a plurality of paralleled linear straight sections extending in a first direction. The layer also includes a plurality of connecting sections each having a width in the first direction sufficient to form a wire-connectable contact therein and arranged to connect between adjacent ones of the straight sections in a second direction. The connecting sections have respective ends formed aligned with a first straight line parallel to the second direction.
摘要翻译： 半导体器件包括半导体层，该半导体层包括在第一方向上延伸的多个平行的线性直线部分。 该层还包括多个连接部分，每个连接部分具有在第一方向上的宽度，足以在其中形成可接线的触点，并且布置成在第二方向上在相邻的直部分之间连接。 连接部具有与平行于第二方向的第一直线对准的各自的端部。
-
公开(公告)号：US4833217A
公开(公告)日：1989-05-23
申请号：US805659
申请日：1985-12-06
申请人： Keishiro Igi , Takayuki Okamura , Shunro Taniguchi , Masao Ishii , Yoshifumi Murata , Shinichi Yokota , Takeshi Matsumoto , Hideki Endo , Kazuto Hashimoto
发明人： Keishiro Igi , Takayuki Okamura , Shunro Taniguchi , Masao Ishii , Yoshifumi Murata , Shinichi Yokota , Takeshi Matsumoto , Hideki Endo , Kazuto Hashimoto
摘要： A polycarbonate resin composition which comprises(i) bisphenol type aromatic polycarbonate, in admixture with(ii) 5 to 200 parts by weight of a polyester type copolymer, per 100 parts by weight of said bisphenol type aromatic polycarbonate, which is produced by adding(a) 5 to 100 parts by weight of bisphenol type aromatic polycarbonate having a viscosity-average molecular weight of not less than 5,000,to (b) 100 parts by weight of a polyester precursor having a number-average polymerization degree of 1 to 30 which is obtained from bifunctional carboxylic acid mainly composed of terephthalic acid or a derivative thereof having an ester forming ability and a diol component, and effecting polycondensation, which provides an improved fluidity and solvent cracking resistance without remarkably decreasing of the original impact resistance and transparency of polycarbonate, to eliminate the defects of polycarbonate.
摘要翻译： 一种聚碳酸酯树脂组合物，其包含（i）双酚型芳族聚碳酸酯，其与（ii）5〜200重量份的聚酯型共聚物相混合，相对于100重量份的所述双酚型芳族聚碳酸酯，其通过将（ a）5〜100重量份粘均分子量不小于5,000的双酚型芳族聚碳酸酯，（b）100重量份数均聚合度为1〜30的聚酯前体， 由主要由具有酯形成能力的对苯二甲酸或其衍生物和二醇组分的双官能羧酸获得，并且进行缩聚，其提供改善的流动性和耐溶剂龟裂性，而不显着降低聚碳酸酯的原始耐冲击性和透明度 ，以消除聚碳酸酯的缺陷。
-
公开(公告)号：US3965076A
公开(公告)日：1976-06-22
申请号：US488059
申请日：1974-07-12
CPC分类号： C08C19/28
摘要： A modified cis-1,4-polyisoprene rubber having enhanced green strength is produced by reacting said rubber with maleic anhydride in a solvent including an aliphatic hydrocarbon or an alicyclic hydrocarbon or an alicyclic hydrocarbon; the efficiency of the reaction of the maleic anhydride is markedly increased by employing a relatively minor amount of an aromatic hydrocarbon in combination with the aliphatic or alicyclic hydrocarbon reaction solvent.
摘要翻译： 通过使所述橡胶与马来酸酐在包括脂族烃或脂环族烃或脂环族烃的溶剂中反应制备具有增强的生坯强度的改性的顺式-1,4-聚异戊二烯橡胶; 通过使用相对少量的芳族烃与脂族或脂环族烃反应溶剂的组合，马来酸酐的反应效率显着提高。
-
公开(公告)号：US07960779B2
公开(公告)日：2011-06-14
申请号：US12393186
申请日：2009-02-26
申请人： Takayuki Toba , Takayuki Okamura , Moto Yabuki
发明人： Takayuki Toba , Takayuki Okamura , Moto Yabuki
IPC分类号： H01L29/792 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/11573
摘要： A nonvolatile semiconductor memory of an aspect of the invention includes memory cells in the memory cell forming area, and select gate transistors in the select gate forming area. Each memory cell has two first diffusion layers formed in a semiconductor substrate, a first gate insulating film formed on the semiconductor substrate, a charge storage layer formed on the first gate insulating film, a first intermediate insulating film formed on the charge storage layer and a first gate electrode formed on the first intermediate insulating film. Each select gate transistor has two second diffusion layers formed in the semiconductor substrate, a second gate insulating film formed on the semiconductor substrate, a second intermediate insulating film formed in direct contact with the second gate insulating film and having the same structure as the first intermediate insulating film, and a second gate electrode formed on the second intermediate insulating film.
摘要翻译： 本发明的一个方面的非易失性半导体存储器包括存储单元形成区域中的存储单元，并且在选择栅极形成区域中选择栅极晶体管。 每个存储单元具有形成在半导体衬底中的两个第一扩散层，形成在半导体衬底上的第一栅极绝缘膜，形成在第一栅极绝缘膜上的电荷存储层，形成在电荷存储层上的第一中间绝缘膜和 第一栅电极，形成在第一中间绝缘膜上。 每个选择晶体管具有形成在半导体衬底中的两个第二扩散层，形成在半导体衬底上的第二栅极绝缘膜，与第二栅极绝缘膜直接接触形成并具有与第一中间层相同结构的第二中间绝缘膜 绝缘膜和形成在第二中间绝缘膜上的第二栅电极。
-
-
-
-
-
-
-
-
-
搜索结果
24 条记录 (耗时 0.028 秒)
