公开(公告)号：US20110024750A1

公开(公告)日：2011-02-03

申请号：US12846534

申请日：2010-07-29

申请人： Shunpei YAMAZAKI ,  Hiroki OHARA ,  Toshinari SASAKI ,  Kosei NODA ,  Hideaki KUWABARA

发明人： Shunpei YAMAZAKI ,  Hiroki OHARA ,  Toshinari SASAKI ,  Kosei NODA ,  Hideaki KUWABARA

IPC分类号： H01L29/786 ,  H01L21/34 ,  H01L29/772 ,  H01L21/84

CPC分类号： H01L27/1225 ,  G02F1/133345 ,  G02F1/1337 ,  G02F1/134309 ,  G02F1/136227 ,  G02F1/136277 ,  G02F1/1368 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/24 ,  H01L29/517 ,  H01L29/78609 ,  H01L29/7869

摘要： An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.

摘要翻译： 目的在于提供一种半导体器件，其具有可以充分降低布线之间的寄生电容的结构。 用作沟道保护层的氧化物绝缘层形成在与栅电极层重叠的氧化物半导体层的一部分上。 在与氧化物绝缘层的形成相同的步骤中，形成覆盖氧化物半导体层的周边部分的氧化物绝缘层。 设置覆盖氧化物半导体层的周边部分的氧化物绝缘层以增加栅极电极层与形成在栅电极层的上方或周围的布线层之间的距离，从而降低寄生电容。

公开(公告)号：US20110284839A1

公开(公告)日：2011-11-24

申请号：US13107283

申请日：2011-05-13

申请人： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Kosei NODA

发明人： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Kosei NODA

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/385 ,  H01L27/1225 ,  H01L29/7869

摘要： It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. An oxide semiconductor film serving as a channel formation region of a transistor is formed by a sputtering method at a temperature higher than 200° C., so that the number of water molecules eliminated from the oxide semiconductor film can be 0.5/nm3 or less according to thermal desorption spectroscopy. A substance including a hydrogen atom such as hydrogen, water, a hydroxyl group, or hydride which causes variation in the electric characteristics of a transistor including an oxide semiconductor is prevented from entering the oxide semiconductor film, whereby the oxide semiconductor film can be highly purified and made to be an electrically i-type (intrinsic) semiconductor.

摘要翻译： 本发明的目的是提供一种具有稳定的电特性和高可靠性的氧化物半导体的半导体装置。 通过溅射法在高于200℃的温度下形成用作晶体管的沟道形成区的氧化物半导体膜，从氧化物半导体膜中除去的水分子数可以为0.5nm / nm 3以下 到热解吸光谱。 包含氢原子的物质，例如氢，水，羟基或氢化物，其导致包括氧化物半导体的晶体管的电特性发生变化，从而防止氧化物半导体膜进入氧化物半导体膜，由此氧化物半导体膜可以被高度纯化 并制成电i型（本征）半导体。

公开(公告)号：US20110008931A1

公开(公告)日：2011-01-13

申请号：US12832329

申请日：2010-07-08

申请人： Shunpei YAMAZAKI ,  Miyuki HOSOBA ,  Kosei NODA ,  Hiroki OHARA ,  Toshinari SASAKI ,  Junichiro SAKATA

发明人： Shunpei YAMAZAKI ,  Miyuki HOSOBA ,  Kosei NODA ,  Hiroki OHARA ,  Toshinari SASAKI ,  Junichiro SAKATA

IPC分类号： H01L21/36

CPC分类号： H01L29/66969 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/7869

摘要： A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced.

摘要翻译： 一种高度可靠的半导体器件及其制造方法，其包括具有稳定电特性的薄膜晶体管。 在包括具有沟道形成区域的半导体层是氧化物半导体层的薄膜晶体管的半导体器件的制造方法中，减少诸如水分的杂质的热处理以提高氧化物半导体层的纯度并氧化氧化物 进行半导体层（脱水或脱氢的热处理）。 氧化物半导体层中的水分等杂质，以及存在于栅极绝缘层中的杂质都会降低，氧化物半导体层和氧化物半导体层之间的界面中存在的杂质如氧化物半导体层和与氧化物半导体层接触的薄膜 减少了

公开(公告)号：US20120040495A1

公开(公告)日：2012-02-16

申请号：US13197825

申请日：2011-08-04

申请人： Kosei NODA ,  Toshinari SASAKI

发明人： Kosei NODA ,  Toshinari SASAKI

IPC分类号： H01L21/385

CPC分类号： H01L29/66969 ,  H01L21/02164 ,  H01L21/465 ,  H01L21/477 ,  H01L22/10 ,  H01L29/401 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/7869

摘要： A transistor with superior electric characteristics is manufactured. An oxide insulating film is formed over a substrate, an oxide semiconductor film is formed over the oxide insulating film, heat treatment is then conducted at a temperature at which hydrogen contained in the oxide semiconductor film is desorbed and part of oxygen contained in the oxide insulating film is desorbed, then the heated oxide semiconductor film is etched into a predetermined shape to form an island-shaped oxide semiconductor film, a pair of electrodes is formed over the island-shaped oxide semiconductor film, a gate insulating film is formed over the pair of electrodes and the island-shaped oxide semiconductor film, and a gate electrode is formed over the gate insulating film.

摘要翻译： 制造出具有优异电特性的晶体管。 在衬底上形成氧化物绝缘膜，在氧化物绝缘膜上形成氧化物半导体膜，然后在氧化物半导体膜中所含的氢被解吸的温度和氧化物绝缘中包含的部分氧进行热处理 膜被解吸，然后将加热的氧化物半导体膜蚀刻成预定形状以形成岛状氧化物半导体膜，在岛状氧化物半导体膜上形成一对电极，在该对上形成栅极绝缘膜 的电极和岛状氧化物半导体膜，并且栅极电极形成在栅极绝缘膜上。

公开(公告)号：US20130069053A1

公开(公告)日：2013-03-21

申请号：US13608039

申请日：2012-09-10

申请人： Shunpei YAMAZAKI ,  Atsuo ISOBE ,  Toshinari SASAKI

发明人： Shunpei YAMAZAKI ,  Atsuo ISOBE ,  Toshinari SASAKI

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1218 ,  H01L27/1225

摘要： To provide a transistor which includes an oxide semiconductor and is capable of operating at high speed or a highly reliable semiconductor device including the transistor, a transistor in which an oxide semiconductor layer including a pair of low-resistance regions and a channel formation region is provided over an electrode layer, which is embedded in a base insulating layer and whose upper surface is at least partly exposed from the base insulating layer, and a wiring layer provided above the oxide semiconductor layer is electrically connected to the electrode layer or a part of a low-resistance region of the oxide semiconductor layer, which overlaps with the electrode layer.

公开(公告)号：US20120286270A1

公开(公告)日：2012-11-15

申请号：US13463092

申请日：2012-05-03

申请人： Atsuo ISOBE ,  Toshinari SASAKI ,  Junichi KOEZUKA ,  Shunpei YAMAZAKI

发明人： Atsuo ISOBE ,  Toshinari SASAKI ,  Junichi KOEZUKA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/4238 ,  H01L21/02565 ,  H01L21/265 ,  H01L21/425 ,  H01L21/84 ,  H01L27/1085 ,  H01L27/10876 ,  H01L27/1156 ,  H01L27/1203 ,  H01L27/1225 ,  H01L28/40 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78693

摘要： It is an object to provide a semiconductor device in which a short-channel effect is suppressed and miniaturization is achieved, and a manufacturing method thereof. A trench is formed in an insulating layer and impurities are added to an oxide semiconductor film in contact with an upper end corner portion of the trench, whereby a source region and a drain region are formed. With the above structure, miniaturization can be achieved. Further, with the trench, a short-channel effect can be suppressed setting the depth of the trench as appropriate even when a distance between a source electrode layer and a drain electrode layer is shortened.

摘要翻译： 本发明的目的是提供一种抑制短路效应并实现小型化的半导体器件及其制造方法。 在绝缘层中形成沟槽，并且将杂质添加到与沟槽的上端角部接触的氧化物半导体膜，由此形成源极区域和漏极区域。 利用上述结构，可以实现小型化。 此外，利用沟槽，即使当源电极层和漏电极层之间的距离缩短时，也可以适当地抑制沟槽的深度适当地设定短沟道效应。

公开(公告)号：US20120258575A1

公开(公告)日：2012-10-11

申请号：US13437271

申请日：2012-04-02

申请人： Yuhei SATO ,  Keiji SATO ,  Toshinari SASAKI ,  Tetsunori MARUYAMA ,  Atsuo ISOBE ,  Tsutomu MURAKAWA ,  Sachiaki TEZUKA

发明人： Yuhei SATO ,  Keiji SATO ,  Toshinari SASAKI ,  Tetsunori MARUYAMA ,  Atsuo ISOBE ,  Tsutomu MURAKAWA ,  Sachiaki TEZUKA

IPC分类号： H01L21/336

CPC分类号： H01L29/7869 ,  H01L21/477

摘要： To provide a highly reliable semiconductor device manufactured by giving stable electric characteristics to a semiconductor device including an oxide semiconductor. In a manufacturing process of a transistor, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a gate insulating film, a gate electrode layer, and an aluminum oxide film are formed in this order, and then heat treatment is performed on the oxide semiconductor layer and the aluminum oxide film, whereby an oxide semiconductor layer from which an impurity containing a hydrogen atom is removed and which includes a region containing oxygen more than the stoichiometric proportion is formed. In addition, when the aluminum oxide film is formed, entry and diffusion of water or hydrogen into the oxide semiconductor layer from the air due to heat treatment in a manufacturing process of a semiconductor device or an electronic appliance including the transistor can be prevented.

摘要翻译： 提供通过给包括氧化物半导体的半导体器件赋予稳定的电特性而制造的高可靠性的半导体器件。 在晶体管的制造工序中，依次形成氧化物半导体层，源极电极层，漏极电极层，栅极绝缘膜，栅电极层和氧化铝膜，然后进行热处理 在氧化物半导体层和氧化铝膜上形成除去含有氢原子的杂质的氧化物半导体层，其中含有超过化学计量比的氧的区域。 此外，当形成氧化铝膜时，可以防止在半导体器件或包括晶体管的电子设备的制造过程中由于热处理而从空气中进入和扩散水或氢进入氧化物半导体层。

公开(公告)号：US20110003428A1

公开(公告)日：2011-01-06

申请号：US12826015

申请日：2010-06-29

申请人： Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA ,  Shunpei YAMAZAKI

发明人： Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA ,  Shunpei YAMAZAKI

IPC分类号： H01L21/16

CPC分类号： H01L29/66969 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

摘要： It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.

摘要翻译： 本发明的目的是提供一种高度可靠的半导体器件，其包括具有稳定电特性的薄膜晶体管。 另一个目的是以更高的生产率以更低的成本制造高可靠性的半导体器件。 在包括薄膜晶体管的半导体器件的制造方法中，使用氧化物半导体层形成具有沟道形成区域，源极区域和漏极区域的半导体层，进行热处理（脱水或脱氢的热处理） 以提高氧化物半导体层的纯度并减少诸如水分的杂质。 此外，在氧气氛下缓慢冷却经受热处理的氧化物半导体层。

公开(公告)号：US20100304529A1

公开(公告)日：2010-12-02

申请号：US12787757

申请日：2010-05-26

申请人： Toshinari SASAKI ,  Hiroki OHARA ,  Junichiro SAKATA

发明人： Toshinari SASAKI ,  Hiroki OHARA ,  Junichiro SAKATA

IPC分类号： H01L21/16 ,  H01L21/84

CPC分类号： H01L29/66969 ,  H01L21/02164 ,  H01L21/02565 ,  H01L21/30604 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a highly reliable semiconductor device including a thin film transistor having stable electric characteristics. In addition, another object is to manufacture a highly reliable semiconductor device at low cost with high productivity. In a method for manufacturing a semiconductor device including a thin film transistor including an oxide semiconductor layer as a channel formation region, the oxide semiconductor layer is heated under a nitrogen atmosphere to lower its resistance, thereby forming a low-resistance oxide semiconductor layer. Further, resistance of a region of the low-resistance oxide semiconductor layer, which is overlapped with a gate electrode layer, is selectively increased, thereby forming a high-resistance oxide semiconductor layer. Resistance of the oxide semiconductor layer is increased by forming a silicon oxide film in contact with the oxide semiconductor layer by a sputtering method.

摘要翻译： 目的在于提供一种具有稳定电特性的薄膜晶体管的高度可靠的半导体装置。 此外，另一个目的是以高生产率以低成本制造高度可靠的半导体器件。 在包括具有作为沟道形成区域的氧化物半导体层的薄膜晶体管的半导体器件的制造方法中，在氮气气氛下加热氧化物半导体层以降低其电阻，从而形成低电阻氧化物半导体层。 此外，选择性地增加与栅电极层重叠的低电阻氧化物半导体层的区域的电阻，从而形成高电阻氧化物半导体层。 通过溅射法形成与氧化物半导体层接触的氧化硅膜，可提高氧化物半导体层的电阻。

公开(公告)号：US20100133530A1

公开(公告)日：2010-06-03

申请号：US12624888

申请日：2009-11-24

申请人： Kengo AKIMOTO ,  Toshinari SASAKI ,  Hideaki KUWABARA

发明人： Kengo AKIMOTO ,  Toshinari SASAKI ,  Hideaki KUWABARA

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.

摘要翻译： 在使用氧化物半导体作为有源层的薄膜晶体管中，为了防止用作有源层的氧化物半导体区域的组成，膜质量，界面等的变化，并且为了稳定化 薄膜晶体管的电气特性。 在其中使用第一氧化物半导体区域作为有源层的薄膜晶体管中，在第一氧化物半导体区域和用于薄的第一氧化物半导体区域的保护绝缘层之间形成具有比第一氧化物半导体区域低导电性的第二氧化物半导体区域 由此第二氧化物半导体区域用作第一氧化物半导体区域的保护层; 因此，可以防止第一氧化物半导体区域的组成变化或膜质量的劣化，并且能够稳定薄膜晶体管的电特性。