公开(公告)号：US20070201406A1

公开(公告)日：2007-08-30

申请号：US11534193

申请日：2006-09-21

申请人： Young Yoon ,  Suk Lee ,  Li-Hsiang Sun

发明人： Young Yoon ,  Suk Lee ,  Li-Hsiang Sun

IPC分类号： H04B7/216

CPC分类号： H04W76/10 ,  H04L5/0094 ,  H04L5/023 ,  H04L27/2601 ,  H04W52/146 ,  H04W72/0406

摘要： A method and apparatus is provided for multiplexing multiple Reverse feedback Channels in integrated multi-carrier systems in multi-carrier wireless networks. Assignment of a MAC Index for Reverse Link feedback channels to any Forward Link carrier using the Traffic Channel Assignment (TCA) message is facilitated.

摘要翻译： 提供一种用于在多载波无线网络中的集成多载波系统中复用多个反向反向信道的方法和装置。 使用业务信道分配（TCA）消息将反向链路反馈信道的MAC索引分配给任何前向链路载波。

公开(公告)号：US20060145297A1

公开(公告)日：2006-07-06

申请号：US11319593

申请日：2005-12-29

申请人： Suk Lee

发明人： Suk Lee

IPC分类号： H01L29/00

CPC分类号： H01L27/0802

摘要： A voltage-dividing resistor enables a multi-step voltage division. The voltage-dividing resistor includes a polysilicon layer formed on a semiconductor substrate; a metal layer formed on a partial area of the polysilicon layer; an insulating interlayer covering the polysilicon layer and the metal layer; a first electrode for applying a first reference voltage to one end of the polysilicon layer; a second electrode for applying a second reference voltage to the other end of the polysilicon layer; a plurality of third electrodes provided between the first and second electrodes to contact the metal layer; and a plurality of fourth electrodes provided between the first and second electrodes to contact the polysilicon layer.

摘要翻译： 分压电阻可实现多级分压。 分压电阻器包括形成在半导体衬底上的多晶硅层; 形成在所述多晶硅层的部分区域上的金属层; 覆盖多晶硅层和金属层的绝缘夹层; 用于将第一参考电压施加到多晶硅层的一端的第一电极; 用于将第二参考电压施加到所述多晶硅层的另一端的第二电极; 多个第三电极，设置在所述第一和第二电极之间以接触所述金属层; 以及多个第四电极，设置在第一和第二电极之间以接触多晶硅层。

公开(公告)号：US20060145249A1

公开(公告)日：2006-07-06

申请号：US11319486

申请日：2005-12-29

申请人： Suk Lee

发明人： Suk Lee

IPC分类号： H01L29/76

CPC分类号： H01L29/7816 ,  H01L29/0634 ,  H01L29/0873 ,  H01L29/42368 ,  H01L29/66689

摘要： A lateral double-diffused metal oxide semiconductor transistor (LDMOS) transistor includes a semiconductor substrate of a first conductivity; an extended drain region of the first conductivity formed in a surface region of the semiconductor substrate; and a depletion region, formed in the extended drain region, including first and second impurity regions sequentially embedded below a surface of the extended drain region, the first embedded impurity region being of a second conductivity and the second embedded impurity region being of the first conductivity.

摘要翻译： 横向双扩散金属氧化物半导体晶体管（LDMOS）晶体管包括具有第一导电性的半导体衬底; 在所述半导体衬底的表面区域中形成所述第一导电体的延伸漏极区域; 以及形成在所述延伸漏极区域中的耗尽区域，包括顺序地嵌入在所述延伸漏极区域的表面的下方的第一和第二杂质区域，所述第一埋入杂质区域具有第二导电性，所述第二埋入杂质区域具有第一导电性 。

公开(公告)号：US20080084841A1

公开(公告)日：2008-04-10

申请号：US11774544

申请日：2007-07-06

申请人： Sang G. Kim ,  Young Yoon ,  Li-Hsiang Sun ,  Suk Lee ,  Hobin Kim ,  Shu Wang

发明人： Sang G. Kim ,  Young Yoon ,  Li-Hsiang Sun ,  Suk Lee ,  Hobin Kim ,  Shu Wang

IPC分类号： H04Q7/00 ,  H04L23/02

CPC分类号： H04W72/1268 ,  H04L1/0002 ,  H04L1/0007 ,  H04L1/0009 ,  H04L1/0026 ,  H04L1/0078 ,  H04L5/0007 ,  H04W72/0446

摘要： A method of transmitting data by at least one access terminal (AT) in a wireless communication system is disclosed. More specifically, the method includes ceasing all transmissions by the at least one AT during a duration corresponding to a duration used by an access node (AN) to transmit a superframe preamble, wherein the superframe comprises a plurality of physical frames.

摘要翻译： 公开了一种在无线通信系统中由至少一个接入终端（AT）发送数据的方法。 更具体地说，该方法包括在对应于由接入节点（AN）用于发送超帧前导码的持续时间的持续时间内停止所述至少一个AT的所有传输，其中超帧包括多个物理帧。

公开(公告)号：US20080036820A1

公开(公告)日：2008-02-14

申请号：US11575258

申请日：2005-11-28

申请人： Ji Yang ,  Jeong Oh ,  Suk Lee ,  Sang Han ,  Han Ko ,  Do Byun ,  Yong Kim ,  Sang Son

发明人： Ji Yang ,  Jeong Oh ,  Suk Lee ,  Sang Han ,  Han Ko ,  Do Byun ,  Yong Kim ,  Sang Son

IPC分类号： B41J2/06

CPC分类号： B41J2/06

摘要： Disclosed herein is an apparatus for jetting droplets using an electrostatic field, the apparatus includes a body, a chamber, an actuator, a nozzle, and a pillar-shaped member. The body is configured to contain and support a chamber, an actuator, a nozzle, and a pillar-shaped member and configured. The chamber is formed to have a predetermined volume in the body and accommodate a predetermined amount of fluid. The actuator is formed on the body, and configured to jet the fluid accommodated in the chamber using a controllable electrostatic field. The nozzle is configured to pass through the upper portion of the chamber and the central portion of the actuator, and to allow the fluid accommodated in the chamber to flow therethrough. The pillar-shaped member is located in a direction extending from the longitudinal central axis of the nozzle, and is configured to be electrically grounded and guide the fluid to smoothly flow to the inlet of the nozzle.

摘要翻译： 本文公开了一种使用静电场喷射液滴的装置，该装置包括主体，腔室，致动器，喷嘴和柱状构件。 主体构造成容纳和支撑腔室，致动器，喷嘴和柱状构件并构造。 腔室形成为在体内具有预定的体积，并适应预定量的流体。 致动器形成在主体上，并且构造成使用可控制的静电场喷射容纳在腔室中的流体。 喷嘴构造成穿过腔室的上部和致动器的中心部分，并且允许容纳在腔室中的流体流过其中。 柱状构件位于从喷嘴的纵向中心轴线延伸的方向上，并且被配置为电接地并引导流体平稳地流到喷嘴的入口。

公开(公告)号：US20070286226A1

公开(公告)日：2007-12-13

申请号：US11740271

申请日：2007-04-25

申请人： Young Yoon ,  Li-Hsiang Sun ,  Sang Kim ,  Suk Lee ,  Shu Wang

发明人： Young Yoon ,  Li-Hsiang Sun ,  Sang Kim ,  Suk Lee ,  Shu Wang

IPC分类号： H04L12/413

CPC分类号： H04L5/0055 ,  H04L1/1607 ,  H04L1/1887 ,  H04L2001/0092

摘要： A method of receiving an acknowledgement (ACK) signal from at least one access terminal (AT) in a wireless communication system is disclosed. More specifically, the method includes transmitting at least one packet via a packet data channel from an access network (AN), receiving at least one ACK signal from the at least one AT using same channelization resources, wherein each AT is assigned a code specific to each AT, and identifying the ACK signal corresponding to the transmitted packet from the received at least one ACK signal.

摘要翻译： 公开了一种在无线通信系统中从至少一个接入终端（AT）接收确认（ACK）信号的方法。 更具体地，该方法包括经由分组数据信道从接入网络（AN）发送至少一个分组，使用相同的信道化资源从至少一个AT接收至少一个ACK信号，其中每个AT分配特定于 每个AT，并且从所接收的至少一个ACK信号中识别与所发送的分组相对应的ACK信号。

公开(公告)号：US20070091817A1

公开(公告)日：2007-04-26

申请号：US11534084

申请日：2006-09-21

申请人： Young Yoon ,  Li-Hsiang Sun ,  Sang Kim ,  Suk Lee

发明人： Young Yoon ,  Li-Hsiang Sun ,  Sang Kim ,  Suk Lee

IPC分类号： H04J1/16 ,  H04L12/56

CPC分类号： H04W52/58 ,  H04L1/0026 ,  H04L1/0027 ,  H04L47/10 ,  H04L47/14 ,  H04L47/263 ,  H04W28/06 ,  H04W72/12

摘要： A method of transmitting channel quality information (CQI) to an access network (AN) in a system having at least one carrier is disclosed. More specifically, the method includes receiving at least one packet from the AN, each of which includes an indicator, wherein the indicator provides buffer level information and ceasing transmission of the CQI of at least one non-anchor carrier to the AN if the buffer level information indicates that there is no more packet to be transmitted to an access terminal (AT).

摘要翻译： 公开了一种在具有至少一个载波的系统中向接入网络（AN）发送信道质量信息（CQI）的方法。 更具体地说，该方法包括接收来自AN的至少一个分组，每个分组包括一个指示符，其中如果缓冲器级别，则指示符提供缓冲器级别信息并停止向AN发送至少一个非锚定载波的CQI 信息表示没有更多的数据包要发送到接入终端（AT）。

公开(公告)号：US20060145285A1

公开(公告)日：2006-07-06

申请号：US11319481

申请日：2005-12-29

申请人： Suk Lee

发明人： Suk Lee

IPC分类号： H01L23/58

CPC分类号： H01L29/7816 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/66689

摘要： A lateral DMOS transistor having a uniform distribution of channel impurity concentration includes a drift region of a first conductivity; a body of a second conductivity, the body being disposed in the drift region and has a channel thereon; and a source region of the first conductivity, the source region being disposed within the body and having an upper region surrounded by a first impurity region of the first conductivity.

公开(公告)号：US20060145248A1

公开(公告)日：2006-07-06

申请号：US11319478

申请日：2005-12-29

申请人： Suk Lee

发明人： Suk Lee

IPC分类号： H01L29/76

CPC分类号： H01L29/7816 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66689 ,  H01L29/66696

摘要： A lateral double-diffused MOS (LDMOS) transistor is provided with a trench source structure. The LDMOS transistor includes a semiconductor substrate of a first conductivity, the semiconductor substrate having a trench formed in a surface region corresponding to a source of the transistor; a body of a second conductivity, the body disposed in the semiconductor substrate to surround the trench; and a source region of the first conductivity, the source region forming a sidewall of the trench.

摘要翻译： 横向双扩散MOS（LDMOS）晶体管具有沟槽源结构。 所述LDMOS晶体管包括具有第一导电性的半导体衬底，所述半导体衬底具有形成在对应于所述晶体管的源极的表面区域中的沟槽; 所述主体设置在所述半导体衬底中以围绕所述沟槽; 以及源区域的第一导电性，源极区域形成沟槽的侧壁。

公开(公告)号：US20060112876A1

公开(公告)日：2006-06-01

申请号：US11154578

申请日：2005-06-17

申请人： Jin Choi ,  Suk Lee

发明人： Jin Choi ,  Suk Lee

IPC分类号： C23C16/00 ,  H01L21/306 ,  C23F1/00

CPC分类号： C23C16/5096 ,  C23C16/45563 ,  C23C16/4558 ,  H01J37/3244

摘要： A semiconductor processing apparatus, designed to inject reactant gas with uniform pressure and flux therein, includes a chamber in which a process is performed, a gas supply to supply reactant gas to the chamber, a gas dispenser having a plurality of nozzles to inject the reactant gas into the chamber, and a gas distribution route formed in the gas dispenser to uniformly distribute the reactant gas supplied from the gas supply to the nozzles.

摘要翻译： 一种半导体处理装置，其设计成用于在其中注入均匀的压力和通量的反应气体，包括其中进行处理的室，用于向室供应反应气体的气体供应器，具有多个喷嘴以注入反应物的气体分配器 气体进入室内，以及形成在气体分配器中的气体分配通道，以将从气体供应供应的反应气体均匀地分配到喷嘴。