公开(公告)号：US11678518B2

公开(公告)日：2023-06-13

申请号：US17344903

申请日：2021-06-10

Applicant: LG Display Co., Ltd.

Inventor： JungSeok Seo ,  PilSang Yun ,  SeHee Park ,  Jiyong Noh

IPC: H10K59/121 ,  H10K59/131 ,  H01L27/12 ,  H10K59/12 ,  H01L27/32

CPC classification number: H01L27/3262 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1262 ,  H01L27/3276 ,  H01L2227/323

Abstract: A display device includes a substrate, a pixel driver on the substrate, and a display element connected to the pixel driver. The pixel driver includes a conductive layer on the substrate, a buffer layer on the conductive layer, a semiconductor layer on the buffer layer, a gate electrode, the gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode connected to the semiconductor layer. The buffer layer includes a flattened portion overlapping the conductive layer, and a stepped portion overlapping the periphery of the conductive layer. The semiconductor layer includes a first oxide semiconductor layer on the buffer layer, and a second oxide semiconductor layer on the first oxide semiconductor layer. A width of the first oxide semiconductor layer is larger than a width of the second oxide semiconductor layer, and the first oxide semiconductor layer is on the stepped portion of the buffer layer.

公开(公告)号：US11621356B2

公开(公告)日：2023-04-04

申请号：US17406994

申请日：2021-08-19

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  JungSeok Seo ,  PilSang Yun ,  Jeyong Jeon ,  Jaeyoon Park ,  ChanYong Jeong

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US11557680B2

公开(公告)日：2023-01-17

申请号：US17123011

申请日：2020-12-15

Applicant: LG Display Co., Ltd.

Inventor： Jaeman Jang ,  JungSeok Seo ,  PilSang Yun ,  InTak Cho

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/423

Abstract: A thin film transistor, a method for manufacturing the same and a display apparatus comprising the same are disclosed, in which the thin film transistor comprises a semiconductor formed on a substrate, a gate insulating film formed on the semiconductor, a gate electrode formed on the gate insulating film, a first insulating film formed on the substrate, a first conductor portion formed on the first insulating film and formed at one side of the semiconductor, and a second conductor portion formed on the first insulating film and formed at another side of the semiconductor, wherein a first portion of the first insulating film may be formed between the semiconductor and the first conductor portion, and a second portion of the first insulating film may be formed between the semiconductor and the second conductor portion.

公开(公告)号：US10978499B2

公开(公告)日：2021-04-13

申请号：US16525482

申请日：2019-07-29

Applicant: LG Display Co., Ltd.

Inventor： Jaeman Jang ,  SeHee Park ,  DaeHwan Kim ,  PilSang Yun

IPC: H01L27/12 ,  H01L27/32

Abstract: A display apparatus includes a substrate; a pixel driving circuit on the substrate; and a display unit connected with the pixel driving circuit, wherein the pixel driving circuit includes a first thin film transistor and a second thin film transistor, wherein the first thin film transistor includes, a first gate electrode on the substrate, a first active layer spaced apart from the first gate electrode and overlapping at least a part of the first gate electrode, a first source electrode connected with the first active layer; and a first drain electrode spaced apart from the first source electrode and connected with the first active layer, and wherein the second thin film transistor includes, a second active layer on the substrate, and a second gate electrode spaced apart from the second active layer and partially overlapping at least a part of the second active layer, wherein the first gate electrode is disposed between the substrate and the first active layer, the second active layer is disposed between the substrate and the second gate electrode, and the first gate electrode and the second gate electrode are disposed at an opposite side with respect to the second active layer.

公开(公告)号：US10396099B2

公开(公告)日：2019-08-27

申请号：US15391636

申请日：2016-12-27

Applicant: LG Display Co., Ltd.

Inventor： JongUk Bae ,  YongHo Jang ,  JunHyeon Bae ,  Kwanghwan Ji ,  PilSang Yun ,  Jiyong Noh

IPC: H01L27/12 ,  G02F1/1368 ,  H01L27/32 ,  G02F1/1362 ,  H01L29/786 ,  G09G3/36 ,  G09G3/3266 ,  G09G3/3258 ,  G09G3/3275 ,  H01L29/417 ,  H01L29/66

Abstract: Disclosed are an oxide thin film transistor (TFT), a method of manufacturing the same, and a display panel and a display device using the same, in which a first conductor and a second conductor are provided at end portions of a semiconductor layer formed of oxide semiconductor. The first conductor and second conductor are electrically connected to a first electrode and a second electrode, and covered by a gate insulation layer. The oxide TFT includes a semiconductor layer provided on a buffer and including an oxide semiconductor, a gate insulation layer covering the semiconductor layer and the buffer, a gate electrode provided on the gate insulation layer to overlap a portion of the semiconductor layer, and a passivation layer covering the gate and the gate insulation layer.

公开(公告)号：US20180151114A1

公开(公告)日：2018-05-31

申请号：US15828194

申请日：2017-11-30

Applicant: LG Display Co., Ltd.

Inventor： HongRak Choi ,  SeHee Park ,  PilSang Yun ,  HyungJoon Koo ,  Kwanghwan Ji ,  Jaeyoon Park

IPC: G09G3/325 ,  H01L27/32

Abstract: Disclosed are a transistor assembly, an organic light emitting display panel including the same, and an organic light emitting display device including the organic light emitting display panel, in which a first electrode of a switching transistor is used as a gate of a driving transistor.

公开(公告)号：US11984509B2

公开(公告)日：2024-05-14

申请号：US18117416

申请日：2023-03-04

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  JungSeok Seo ,  PilSang Yun ,  Jeyong Jeon ,  Jaeyoon Park ,  ChanYong Jeong

IPC: H01L29/78 ,  H01L29/24 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66742

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US11901461B2

公开(公告)日：2024-02-13

申请号：US17958167

申请日：2022-09-30

Applicant: LG Display Co., Ltd.

Inventor： Jaeman Jang ,  PilSang Yun ,  Jiyong Noh ,  InTak Cho

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L29/6675 ,  H01L29/78618 ,  H01L29/78696

Abstract: Disclosed are a thin film transistor, a display apparatus comprising the thin film transistor, and a method for manufacturing the thin film transistor. The thin film transistor comprises an active layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer includes a silicon semiconductor layer, and an oxide semiconductor layer which contacts the silicon semiconductor layer, wherein at least a portion of the silicon semiconductor layer and at least a portion of the oxide semiconductor layer are overlapped with the gate electrode.

公开(公告)号：US11588027B2

公开(公告)日：2023-02-21

申请号：US17131284

申请日：2020-12-22

Applicant: LG Display Co., Ltd.

Inventor： InTak Cho ,  Jiyong Noh ,  Jaeman Jang ,  PilSang Yun ,  Jeyong Jeon

IPC: G09G3/32 ,  H01L29/40 ,  H01L27/12 ,  H01L29/786 ,  H01L21/765 ,  H01L29/66 ,  H01L21/02

Abstract: A thin film transistor, a display panel comprising the same and a display apparatus are discussed. The thin film transistor comprises a buffer layer embodied on a substrate, a semiconductor layer embodied on the buffer layer, including a channel area, a first conductor portion and a second conductor portion, a gate insulating film embodied on the semiconductor layer, a gate electrode embodied on the gate insulating film, and an auxiliary electrode overlapped with the second conductor portion, wherein the first conductor portion is extended from one side of the channel area, and becomes a source area, and the second conductor portion is extended from the other side of the channel area, and becomes a drain area.

公开(公告)号：US11495692B2

公开(公告)日：2022-11-08

申请号：US17121248

申请日：2020-12-14

Applicant: LG Display Co., Ltd.

Inventor： Jaeman Jang ,  PilSang Yun ,  Jiyong Noh ,  InTak Cho

IPC: H01L29/786 ,  H01L29/66

Abstract: Disclosed are a thin film transistor, a display apparatus comprising the thin film transistor, and a method for manufacturing the thin film transistor. The thin film transistor comprises an active layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer includes a silicon semiconductor layer, and an oxide semiconductor layer which contacts the silicon semiconductor layer, wherein at least a portion of the silicon semiconductor layer and at least a portion of the oxide semiconductor layer are overlapped with the gate electrode.