公开(公告)号：US20170271441A1

公开(公告)日：2017-09-21

申请号：US15600782

申请日：2017-05-21

申请人： Jun Hu ,  Madhur Bobde ,  Hamza Yilmaz

发明人： Jun Hu ,  Madhur Bobde ,  Hamza Yilmaz

IPC分类号： H01L29/06 ,  H01L29/66 ,  H01L21/266 ,  H01L21/265 ,  H01L29/423 ,  H01L29/739 ,  H01L29/40

CPC分类号： H01L29/0623 ,  H01L21/265 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7395 ,  H01L29/7397

摘要： A method of manufacturing an insulated gate bipolar transistor (IGBT) device comprising 1) preparing a semiconductor substrate with an epitaxial layer of a first conductivity type supported on the semiconductor substrate of a second conductivity type; 2) applying a gate trench mask to open a first trench and second trench followed by forming a gate insulation layer to pad the trench and filling the trench with a polysilicon layer to form the first trench gate and the second trench gate; 3) implanting dopants of the first conductivity type to form an upper heavily doped region in the epitaxial layer; and 4) forming a planar gate on top of the first trench gate and apply implanting masks to implant body dopants and source dopants to form a body region and a source region near a top surface of the semiconductor substrate.

公开(公告)号：US08896131B2

公开(公告)日：2014-11-25

申请号：US13020758

申请日：2011-02-03

申请人： Anup Bhalla ,  Sik Lui ,  Jun Hu ,  Fei Wang

发明人： Anup Bhalla ,  Sik Lui ,  Jun Hu ,  Fei Wang

IPC分类号： H01L23/528 ,  H03K17/10 ,  H03K17/04 ,  H01L27/085 ,  H01L27/06 ,  H03K17/567 ,  H03K17/687

CPC分类号： H03K17/6871 ,  H01L27/0629 ,  H01L27/085 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H03K17/0406 ,  H03K17/102 ,  H03K17/567 ,  H03K2017/6875 ,  H01L2924/00

摘要： A switching device includes a low voltage normally-off transistor and a control circuit built into a common die. The device includes source, gate and drain electrodes for the transistor and one or more auxiliary electrodes. The drain electrode is on one surface of a die on which the transistor is formed, while each of the remaining electrodes is located on an opposite surface. The one or more auxiliary electrodes provide electrical contact to the control circuit, which is electrically connected to one or more of the other electrodes.

摘要翻译： 开关器件包括低电压常关晶体管和内置在公共管芯中的控制电路。 该器件包括用于晶体管的源极，栅极和漏极以及一个或多个辅助电极。 漏电极在其上形成晶体管的管芯的一个表面上，而每个剩余的电极位于相对的表面上。 一个或多个辅助电极提供与控制电路的电接触，该电接触电连接到一个或多个其它电极。

公开(公告)号：US20120199875A1

公开(公告)日：2012-08-09

申请号：US13020758

申请日：2011-02-03

申请人： Anup Bhalla ,  Sik Lui ,  Jun Hu ,  Fei Wang

发明人： Anup Bhalla ,  Sik Lui ,  Jun Hu ,  Fei Wang

IPC分类号： H01L27/085

CPC分类号： H03K17/6871 ,  H01L27/0629 ,  H01L27/085 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H03K17/0406 ,  H03K17/102 ,  H03K17/567 ,  H03K2017/6875 ,  H01L2924/00

摘要： A switching device includes a low voltage normally-off transistor and a control circuit built into a common die. The device includes source, gate and drain electrodes for the transistor and one or more auxiliary electrodes. The drain electrode is on one surface of a die on which the transistor is formed, while each of the remaining electrodes is located on an opposite surface. The one or more auxiliary electrodes provide electrical contact to the control circuit, which is electrically connected to one or more of the other electrodes.

摘要翻译： 开关器件包括低电压常关晶体管和内置在公共管芯中的控制电路。 该器件包括用于晶体管的源极，栅极和漏极以及一个或多个辅助电极。 漏电极在其上形成晶体管的管芯的一个表面上，而每个剩余的电极位于相对的表面上。 一个或多个辅助电极提供与控制电路的电接触，该电接触电连接到一个或多个其它电极。

公开(公告)号：US09012279B2

公开(公告)日：2015-04-21

申请号：US13613236

申请日：2012-09-13

申请人： Donghua Liu ,  Wenting Duan ,  Wensheng Qian ,  Jun Hu ,  Jing Shi

发明人： Donghua Liu ,  Wenting Duan ,  Wensheng Qian ,  Jun Hu ,  Jing Shi

IPC分类号： H01L21/8238 ,  H01L29/66 ,  H01L29/737 ,  H01L29/08

CPC分类号： H01L29/66242 ,  H01L29/0821 ,  H01L29/7371

摘要： A SiGe HBT is disclosed, which includes: a silicon substrate; shallow trench field oxides formed in the silicon substrate; a pseudo buried layer formed at bottom of each shallow trench field oxide; a collector region formed beneath the surface of the silicon substrate, the collector region being sandwiched between the shallow trench field oxides and between the pseudo buried layers; a polysilicon gate formed above each shallow trench field oxide having a thickness of greater than 150 nm; a base region on the polysilicon gates and the collector region; emitter region isolation oxides on the base region; and an emitter region on the emitter region isolation oxides and a part of the base region. The polysilicon gate is formed by gate polysilicon process of a MOSFET in a CMOS process. A method of manufacturing the SiGe HBT is also disclosed.

摘要翻译： 公开了一种SiGe HBT，其包括：硅衬底; 形成在硅衬底中的浅沟槽场氧化物; 形成在每个浅沟槽场氧化物的底部的伪掩埋层; 形成在所述硅衬底的表面下方的集电极区域，所述集电极区域夹在所述浅沟槽场氧化物之间和所述伪埋层之间; 形成在每个浅沟槽场氧化物上方的多晶硅栅极，其厚度大于150nm; 多晶硅栅极和集电极区域上的基极区域; 发射极区隔离氧化物; 并且发射极区域上的发射极区域隔离氧化物和基极区域的一部分。 多晶硅栅极通过CMOS工艺中的MOSFET的栅极多晶硅工艺形成。 还公开了制造SiGe HBT的方法。

公开(公告)号：US08880004B2

公开(公告)日：2014-11-04

申请号：US12775323

申请日：2010-05-06

申请人： Jun Hu ,  Reza Shahidi ,  Gregory R. Lie ,  Ravindra M. Garach ,  Shian-De Ju ,  Yu-Chuan Lin

发明人： Jun Hu ,  Reza Shahidi ,  Gregory R. Lie ,  Ravindra M. Garach ,  Shian-De Ju ,  Yu-Chuan Lin

IPC分类号： H04B1/38

CPC分类号： H04W72/0473 ,  H04W72/044 ,  H04W72/1215 ,  H04W88/06 ,  Y02D70/1222 ,  Y02D70/1224 ,  Y02D70/1242 ,  Y02D70/1262 ,  Y02D70/142 ,  Y02D70/146 ,  Y02D70/40

摘要： A device and method for resolving conflicts between air interfaces in a wireless communication system are disclosed. In one embodiment, the method comprises communicating over a first air interface, receiving a request for resources for concurrent use in communicating over a second air interface, determining that a conflict does not exist between resources for the first air interface and at least a portion of the requested resources for the second air interface, and concurrently communicating over the first air interface using resources for the first air interface and communicating over the second air interface using at least a portion of the requested resources for the second air interface.

摘要翻译： 公开了一种用于解决无线通信系统中的空中接口之间的冲突的装置和方法。 在一个实施例中，该方法包括在第一空中接口上进行通信，接收对用于在第二空中接口进行通信中并发使用的资源的请求，确定在第一空中接口的资源和第一空中接口的资源之间不存在冲突 用于第二空中接口的所请求的资源，并且通过第一空中接口的资源同时进行通信，并使用第二空中接口的所请求的资源的至少一部分通过第二空中接口进行通信。

公开(公告)号：US08792839B2

公开(公告)日：2014-07-29

申请号：US12775380

申请日：2010-05-06

申请人： Jun Hu ,  Yu-Chuan Lin ,  Reza Shahidi ,  Vijaya C. Ramasami ,  Ravindra M. Garach

发明人： Jun Hu ,  Yu-Chuan Lin ,  Reza Shahidi ,  Vijaya C. Ramasami ,  Ravindra M. Garach

IPC分类号： H01Q11/12

CPC分类号： H04W72/0473 ,  H04W72/044 ,  H04W72/1215 ,  H04W88/06 ,  Y02D70/1222 ,  Y02D70/1224 ,  Y02D70/1242 ,  Y02D70/1262 ,  Y02D70/142 ,  Y02D70/146 ,  Y02D70/40

摘要： Systems and methods for allocating transmit power among multiple interfaces in a wireless communication system are disclosed. In one embodiment, the method comprises determining a first power level that is used for transmitting over a first air interface, determining a maximum power level available for transmitting over a second interface, comparing the first power level to the maximum power level, determining a second power level that is used for transmitting over the second air interface based on the comparison of the first power level to the maximum power level, and generating a power-based payload constraint based on the second power level.

摘要翻译： 公开了一种用于在无线通信系统中的多个接口之间分配发射功率的系统和方法。 在一个实施例中，该方法包括确定用于通过第一空中接口进行传输的第一功率电平，确定可用于通过第二接口发射的最大功率电平，将第一功率电平与最大功率电平进行比较，确定第二功率电平 基于第一功率电平与最大功率电平的比较，用于通过第二空中接口进行发送的功率电平，以及基于第二功率电平生成基于功率的有效载荷约束。

公开(公告)号：US20120099431A1

公开(公告)日：2012-04-26

申请号：US13274653

申请日：2011-10-17

申请人： Zhongming HOU ,  Jun Hu

发明人： Zhongming HOU ,  Jun Hu

IPC分类号： H04L12/26

CPC分类号： H04L47/266 ,  H04L47/30 ,  H04L69/14 ,  Y02D50/30

摘要： A method for controlling information channel flow is provided according to the present invention, and includes: receiving information from multiple information channels of a data sending device, where the multiple information channels are divided into at least two channel groups, and a group number is set for the at least two channel groups respectively; determining an information channel requiring flow adjustment in the multiple information channels, and obtaining a group number of a channel group including the information channel requiring flow adjustment; generating flow operation information; and sending the flow operation information to the data sending device.

摘要翻译： 根据本发明提供一种用于控制信息信道流的方法，包括：从数据发送设备的多个信息信道接收信息，其中将多个信息信道划分为至少两个信道组，并且设置组号 分别用于至少两个信道组; 确定需要在多个信息信道中进行流量调整的信息信道，以及获得包括需要流量调整的信息信道的信道组的组号; 产生流动操作信息; 并将流程操作信息发送到数据发送装置。

公开(公告)号：US08155608B2

公开(公告)日：2012-04-10

申请号：US12617555

申请日：2009-11-12

申请人： Shuqing Xing ,  Patrick Ahamad Hosein ,  Young Hoon Kwon ,  Jun Hu

发明人： Shuqing Xing ,  Patrick Ahamad Hosein ,  Young Hoon Kwon ,  Jun Hu

IPC分类号： H04B17/02

CPC分类号： H04W36/30 ,  H04W36/14

摘要： A system and method for enhanced parallel receiving interworking in a wireless communications network. A method for controller operation where the controller serves a communications device having at least two receivers includes detecting that the communications device has at least one receiver tuned to a current radio access technology (RAT) and at least one receiver tuned to an alternate RAT, adjusting a network parameter to alter the communication network's performance, and readjusting the network parameter back to its original value in response to determining that the communications device no longer has any receiver tuned to the alternate RAT. The adjusted network parameter impacts only the communications device.

摘要翻译： 一种用于在无线通信网络中增强并行接收互配的系统和方法。 一种用于控制器操作的方法，其中控制器服务具有至少两个接收器的通信设备包括检测通信设备具有调谐到当前无线电接入技术（RAT）的至少一个接收机和调谐到替代RAT的至少一个接收机，调整 响应于确定通信设备不再具有调谐到替代RAT的任何接收机的网络参数来改变通信网络的性能，并且将网络参数重新调整回其原始值。 经调整的网络参数仅影响通信设备。

公开(公告)号：US08066914B2

公开(公告)日：2011-11-29

申请号：US12262871

申请日：2008-10-31

申请人： Jun Hu

发明人： Jun Hu

IPC分类号： H01B1/10 ,  H01L29/04 ,  H01L29/12

CPC分类号： C07F1/005 ,  C07D495/14 ,  H01B1/125 ,  H01B1/128

摘要： 7-ethynyl-2,4,9-trithiaadamantane and related methods are presented. Manufacturing 7-ethynyl-2,4,9-trithiaadamantane includes the steps of: (1) reducing alkyl 2,4,9-trithiaadamantane-7-carboxylate to produce 7-hydroxymethyl-2,4,9-trithiaadamantane; (2) oxidizing 7-hydroxymethyl-2,4,9-trithiaadamantane to produces 7-carbonyl-2,4,9-trithiaadamantane; and (3) reacting 7-carbonyl-2,4,9-trithiaadamantane with Ohira-Bestmann reagent to produces 7-ethynyl-2,4,9-trithiaadamantane. Molecular wires having 2,4,9-trithiaadamantane surface anchors are also disclosed.

摘要翻译： 提出了7-乙炔基-2,4,9-三硫杂金刚烷及相关方法。 制备7-乙炔基-2,4,9-三噻二聚金刚烷包括以下步骤：（1）还原2,4,9-三硫代金刚烷-7-羧酸烷基酯以产生7-羟甲基-2,4,9-三硫杂环丁烷; （2）氧化7-羟甲基-2,4,9-三硫杂多金刚烷以产生7-羰基-2,4,9-三硫杂金刚烷; 和（3）使7-羰基-2,4,9-三硫杂金刚烷与Ohira-Bestmann试剂反应以产生7-乙炔基-2,4,9-三硫代金刚烷。 还公开了具有2,4,9-三硫杂金刚烷表面锚的分子线。

公开(公告)号：US07952896B2

公开(公告)日：2011-05-31

申请号：US12229124

申请日：2008-08-20

申请人： Jun Hu ,  Vietson M. Nguyen ,  Waleed M. Said

发明人： Jun Hu ,  Vietson M. Nguyen ,  Waleed M. Said

IPC分类号： H02M5/452 ,  H02M1/12

CPC分类号： H02M5/4585 ,  H02M7/487 ,  H02M2001/123 ,  H02M2007/53876 ,  Y10T307/406

摘要： A controller for a power conversion system reduces common-mode voltage generated by the power conversion system by imposing a constraint on the control signals applied to the power conversion system. The power conversion system includes a plurality of switching devices that are responsive to control signals provided by the controller to selectively connect each output of the power conversion system to one of a plurality of inputs. The controller generates control signals based on a desired output of the power conversion system. In addition, the controller imposes a constraint on the control signals to reduce the common-mode voltage. The constraint is defined by assigning an integer value to each input of the power conversion system, and requiring that the selective connection of outputs to inputs must result in a sum of integer values equal to zero.

摘要翻译： 用于功率转换系统的控制器通过对施加到功率转换系统的控制信号施加约束来降低由电力转换系统产生的共模电压。 电力转换系统包括多个开关装置，其响应于由控制器提供的控制信号，以选择性地将电力转换系统的每个输出连接到多个输入中的一个。 控制器基于电力转换系统的期望输出产生控制信号。 此外，控制器对控制信号施加约束以降低共模电压。 通过为功率转换系统的每个输入分配一个整数值来定义约束，并且要求将输出与输入的选择性连接必须导致等于零的整数值之和。