公开(公告)号：US20090036033A1

公开(公告)日：2009-02-05

申请号：US12245765

申请日：2008-10-05

申请人： Erik C. Wasinger ,  Gary C. Ettinger ,  Sen-Hou Ko ,  Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ho Seon Shin ,  Donald Olgado

发明人： Erik C. Wasinger ,  Gary C. Ettinger ,  Sen-Hou Ko ,  Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ho Seon Shin ,  Donald Olgado

IPC分类号： B24B1/04 ,  B24B9/00

CPC分类号： C03C19/00 ,  B24B1/04 ,  B24B9/065 ,  B24B21/004 ,  H01L21/02021

摘要： A method of cleaning an edge of a substrate is provided. The method comprises tensioning a first polishing film in a frame; contacting the first polishing film against an edge of a substrate; conforming the first polishing film to the edge of the substrate, the edge including an outer edge and at least one bevel; and rotating the substrate while the first polishing film remains in contact with the substrate. Numerous other aspects are provided.

摘要翻译： 提供了清洁基板的边缘的方法。 该方法包括在框架中张紧第一抛光膜; 使所述第一抛光膜与衬底的边缘接触; 使所述第一抛光膜与所述基板的边缘一致，所述边缘包括外边缘和至少一个斜面; 并且在第一研磨膜与基板保持接触的同时旋转基板。 提供了许多其他方面。

公开(公告)号：US20080293331A1

公开(公告)日：2008-11-27

申请号：US12124153

申请日：2008-05-21

申请人： Yufei Chen ,  Zhenhua Zhang ,  Sen-Hou Ko ,  Wei-Yung Hsu ,  Makoto Matsuo

发明人： Yufei Chen ,  Zhenhua Zhang ,  Sen-Hou Ko ,  Wei-Yung Hsu ,  Makoto Matsuo

IPC分类号： B24B9/06 ,  C08J5/14

CPC分类号： B24B9/065 ,  B24B21/002

摘要： Apparatus and methods are provided relating to polishing a substrate using a polishing device, such as a polishing tape. The polishing device may be formed to include a base, a resin layer adhering to the base, and a plurality of embossed abrasive particles and/or abrasive beads affixed to the base by the resin layer. The plurality of abrasive particles and/or beads may be embossed in the resin layer. The plurality of abrasive beads may include a plurality of abrasive particles suspended in binder material. The plurality of abrasive particles and/or beads and the resin layer combine to form an abrasive side of the polishing device adapted to contact the substrate. Polishing of the substrate preferably includes polishing an edge of the substrate while the substrate is rotated by a holding device such that no apparatus other than the polishing tape contacts the edge while the substrate is rotating.

摘要翻译： 提供的装置和方法涉及使用诸如抛光带的抛光装置来抛光衬底。 抛光装置可以形成为包括基底，粘附到基底的树脂层和由树脂层固定到基底的多个压花磨料颗粒和/或研磨珠。 多个研磨颗粒和/或珠可以在树脂层中压花。 多个研磨珠可以包括悬挂在粘合剂材料中的多个磨料颗粒。 多个研磨颗粒和/或珠粒和树脂层组合形成适于接触基底的抛光装置的研磨侧。 衬底的抛光优选包括在通过保持装置旋转衬底的同时抛光衬底的边缘，使得除了研磨带之外的其它装置在衬底旋转时不接触边缘。

公开(公告)号：US20070251832A1

公开(公告)日：2007-11-01

申请号：US11413493

申请日：2006-04-27

申请人： Tianbao Du ,  Feng Liu ,  You Wang ,  Alain Duboust ,  Wei-Yung Hsu

发明人： Tianbao Du ,  Feng Liu ,  You Wang ,  Alain Duboust ,  Wei-Yung Hsu

IPC分类号： B23H9/00

CPC分类号： B23H5/08 ,  B24B21/04 ,  B24B37/04 ,  B24B57/02

摘要： The present invention relates to an apparatus and a method for polishing a semiconductor substrate with high throughput. One embodiment of the present invention provides an apparatus for electro-chemical mechanical polishing a conductive surface on a substrate. The apparatus comprises a fluid basin having a fluid volume for retaining a polishing solution, a linear polishing station disposed in the fluid basin, wherein the linear polishing station having at least one electrode and a conductive top surface with a linear movement, the conductive top surface is configured to provide an electrical bias to the conductive surface on the substrate, and a carrier head configured to retain the substrate and position the conductive surface of the substrate to be in contact with the conductive top surface of the linear polishing station.

摘要翻译： 本发明涉及一种以高产量抛光半导体衬底的装置和方法。 本发明的一个实施例提供了一种用于对基底上的导电表面进行电化学机械抛光的装置。 该装置包括具有用于保持抛光溶液的流体体积的流体池，设置在流体池中的线性抛光站，其中线性抛光站具有至少一个电极和具有线性运动的导电顶表面，导电顶表面 被配置为向衬底上的导电表面提供电偏压，以及被配置为保持衬底并且将衬底的导电表面定位成与线性抛光站的导电顶表面接触的载体头。

公开(公告)号：US20070238393A1

公开(公告)日：2007-10-11

申请号：US11693695

申请日：2007-03-29

申请人： Ho Shin ,  Gary Ettinger ,  Donald Olgado ,  Erik Wasinger ,  Sen-Hou Ko ,  Charles Dodds ,  Yufei Chen ,  Wei-Yung Hsu

发明人： Ho Shin ,  Gary Ettinger ,  Donald Olgado ,  Erik Wasinger ,  Sen-Hou Ko ,  Charles Dodds ,  Yufei Chen ,  Wei-Yung Hsu

IPC分类号： B24B51/00 ,  B24B49/00 ,  B24B7/30

CPC分类号： B24B9/065 ,  B24B21/002 ,  B24B41/067 ,  B24B49/16 ,  B24B57/02

摘要： Methods of and systems for polishing an edge of a substrate are provided. The invention includes rotating a substrate against a polishing film so as to remove material from the edge of the substrate; and detecting an amount of one of energy and torque exerted in rotating the substrate against the polishing film. The invention may further include determining an amount of material removed from the edge of the substrate based on the detected energy or torque exerted in rotating the substrate against the polishing film; ascertaining a difference between the determined amount of material removed and a preset polish level; and determining an amount of energy or torque to be exerted in rotating the substrate adapted to attain the preset polish level based on the difference between the determined amount of material removed and the preset polish level. Numerous other aspects are provided.

摘要翻译： 提供了抛光衬底边缘的方法和系统。 本发明包括将衬底旋转抵靠抛光膜，以便从衬底的边缘去除材料; 并且检测在将衬底旋转抛光膜时施加的能量和扭矩中的一个的量。 本发明还可以包括基于在将衬底旋转抛光膜时所检测到的能量或扭矩确定从衬底边缘去除的材料量; 确定确定的去除材料量与预设抛光水平之间的差异; 以及基于所确定的所移除的材料量与所述预设的抛光水平之间的差来确定在旋转所述基板时施加的能量或扭矩的量，所述能量或扭矩适于实现预设的抛光水平。 提供了许多其他方面。

公开(公告)号：US20070187258A1

公开(公告)日：2007-08-16

申请号：US11355769

申请日：2006-02-15

申请人： Tianbao Du ,  Feng Liu ,  Alain Duboust ,  Wei-Yung Hsu ,  Liang-Yuh Chen

发明人： Tianbao Du ,  Feng Liu ,  Alain Duboust ,  Wei-Yung Hsu ,  Liang-Yuh Chen

IPC分类号： B23H5/00

CPC分类号： B23H5/08 ,  B24B37/042 ,  C25F3/02 ,  H01L21/32125

摘要： Methods are provided for removing conductive materials from a substrate surface. In one aspect, a method includes providing a substrate comprising dielectric feature definitions formed between substrate field regions, a barrier material disposed in the feature definitions and on the substrate field regions, and a conductive material disposed on the barrier material, polishing the substrate to substantially remove a bulk portion of the conductive material with a direct current bias, and polishing the substrate to remove a residual portion of the conductive material with a pulse bias.

摘要翻译： 提供了从衬底表面去除导电材料的方法。 在一个方面，一种方法包括提供包括在衬底场区域之间形成的介电特征定义的衬底，设置在特征定义中的衬底场区域上的阻挡材料和设置在阻挡材料上的导电材料， 以直流偏压去除导电材料的主体部分，并抛光衬底以用脉冲偏压去除导电材料的剩余部分。

公开(公告)号：US06884724B2

公开(公告)日：2005-04-26

申请号：US09939323

申请日：2001-08-24

申请人： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl

发明人： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl

IPC分类号： H01L21/288 ,  H01L21/321 ,  H01L21/20

CPC分类号： H01L21/7684 ,  H01L21/3212

摘要： Methods and apparatus for planarizing a substrate surface are provided. In one aspect, a method is provided for planarizing a substrate surface including polishing a first conductive material to a barrier layer material, depositing a second conductive material on the first conductive material by an electrochemical deposition technique, and polishing the second conductive material and the barrier layer material to a dielectric layer. In another aspect, a processing system is provided for forming a planarized layer on a substrate, the processing system including a computer based controller configured to cause the system to polish a first conductive material to a barrier layer material, deposit a second conductive material on the first conductive material by an electrochemical deposition technique, and polish the second conductive material and the barrier layer material to a dielectric layer.

公开(公告)号：US6077774A

公开(公告)日：2000-06-20

申请号：US820744

申请日：1997-03-19

申请人： Qi-Zhong Hong ,  Wei-Yung Hsu

发明人： Qi-Zhong Hong ,  Wei-Yung Hsu

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/283 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/441

CPC分类号： H01L21/76849 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002

摘要： A method is provided for forming thin diffusion barriers in a semiconductor device (10). In one embodiment of the invention, a metal precursor gas is introduced to a surface of a dielectric layer. A predetermined amount of heat is then applied to the metal precursor gas and the dielectric layer. The heat causes the metal precursor gas to react with the dielectric layer, thereby forming a uniform, relatively thin diffusion barrier on the surface of the dielectric layer. In another embodiment of the invention, a metal precursor gas is introduced to a surface of a metal conductor. A predetermined amount of heat can then be applied to the metal precursor gas and the metal conductor, which creates a reaction between the gas and the conductor, and thereby produces a thin diffusion barrier on the surface of the metal conductor.

摘要翻译： 提供了一种用于在半导体器件（10）中形成薄的扩散阻挡层的方法。 在本发明的一个实施例中，将金属前体气体引入到电介质层的表面。 然后将预定量的热量施加到金属前体气体和介电层。 热量使金属前体气体与电介质层反应，从而在电介质层的表面上形成均匀的较薄的扩散阻挡层。 在本发明的另一个实施例中，将金属前体气体引入金属导体的表面。 然后可以将预定量的热量施加到金属前体气体和金属导体，这在气体和导体之间产生反应，从而在金属导体的表面上产生薄的扩散阻挡层。

公开(公告)号：US6054382A

公开(公告)日：2000-04-25

申请号：US820729

申请日：1997-03-19

申请人： Wei-Yung Hsu ,  Qi-Zhong Hong

发明人： Wei-Yung Hsu ,  Qi-Zhong Hong

IPC分类号： H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76843

摘要： A method is provided for improving the texture of a metal interconnect (32) in a semiconductor device (10). A first layer of titanium (24), a layer of titanium nitride (26), a second layer of titanium (28), and a metal film (30) are sequentially formed over an oxide layer (12). The second titanium layer (28) is preferably out 10-20 nm thick. Because the metal film (30) is formed over the second titanium layer (28), any metal interconnect (32) that is formed as a part of the metal film (30) has a strong (111) crystalline orientation. Furthermore, because the second titanium layer (28) is relatively thin, the metal film (30) and metal interconnect (32) are not completely transformed into a metal compound having a high electrical resistance.

摘要翻译： 提供了一种用于改善半导体器件（10）中的金属互连（32）的纹理的方法。 在氧化物层（12）上依次形成第一层钛（24），氮化钛层（26），第二层钛（28）和金属膜（30）。 第二钛层（28）优选为10-20nm厚。 由于金属膜（30）形成在第二钛层（28）上，所以形成为金属膜（30）的一部分的任何金属互连件（32）具有强（111）晶体取向。 此外，由于第二钛层（28）相对较薄，金属膜（30）和金属互连（32）不能完全转变为具有高电阻的金属化合物。

公开(公告)号：US5528153A

公开(公告)日：1996-06-18

申请号：US335030

申请日：1994-11-07

申请人： Kelly J. Taylor ,  Wei-Yung Hsu

发明人： Kelly J. Taylor ,  Wei-Yung Hsu

IPC分类号： G01R27/26 ,  G01R31/28 ,  H01L21/66

CPC分类号： G01R31/2831 ,  G01R27/2623 ,  H01L22/14

摘要： A method for measurement of dielectric constant of a thin film is disclosed which is non-destructive and avoids contact with the film and the substrate carrying it. A first characteristic of the substrate is measured using a capacitance measuring device. Then, the thin film is deposited on the substrate. The first characteristic of the substrate is measured a second time after the film has been deposited. Thereafter, the true film thickness is measured. A ratio of the measurements made with the capacitance measuring device is then established with the actual thickness measurement. The dielectric constant can then be derived from a lookup table or graph calibrated for the tools being used for the measurements.

摘要翻译： 公开了一种用于测量介电常数的方法，其是非破坏性的，并且避免与膜和携带它的基板接触。 使用电容测量装置测量衬底的第一特性。 然后，将薄膜沉积在基板上。 在膜沉积后第二次测量基板的第一特性。 此后，测量真实的膜厚度。 然后用实际厚度测量建立用电容测量装置进行的测量的比率。 然后可以从为用于测量的工具校准的查找表或图形中导出介电常数。

公开(公告)号：US20130023079A1

公开(公告)日：2013-01-24

申请号：US13552344

申请日：2012-07-18

申请人： Sang Won Kang ,  Jiang Lu ,  Hua Chung ,  Juno Yu-Ting Huang ,  Wei-Yung Hsu

发明人： Sang Won Kang ,  Jiang Lu ,  Hua Chung ,  Juno Yu-Ting Huang ,  Wei-Yung Hsu

IPC分类号： H01L33/04

CPC分类号： H01L33/007 ,  H01L21/0254 ,  H01L21/02656 ,  H01L33/0095

摘要： Methods of fabricating light emitting diodes using a degas process are described. For example, a method includes providing a partially formed group III-V material layer stack of an LED. Contaminants are removed from the partially formed group III-V material layer stack by a degas process. Formation of the group III-V material layer stack of the LED is then completed.

摘要翻译： 描述了使用脱气工艺制造发光二极管的方法。 例如，一种方法包括提供LED的部分形成的III-V族材料层堆叠。 通过脱气工艺将污染物从部分形成的III-V族材料层堆中除去。 然后完成LED的III-V族材料层堆叠的形成。