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公开(公告)号：US20200321523A1
公开(公告)日：2020-10-08
申请号：US16905366
申请日：2020-06-18
Applicant: Micron Technology, Inc.
Inventor： Enrico Varesi , Paolo Fantini , Lorenzo Fratin , Swapnil A. Lengade
Abstract: Systems, devices, and methods related to or that employ chalcogenide memory components and compositions are described. A component of a memory cell, such as a selector device, storage device, or self-selecting memory device, may be made of a chalcogenide material composition. A chalcogenide material may have a composition that includes one or more elements from the boron group, such as boron, aluminum, gallium, indium, or thallium. The chalcogenide material, for instance, may have a composition of selenium, germanium, and at least one of boron, aluminum, gallium, indium, or thallium. The chalcogenide material may in some cases also include arsenic, but may in some cases lack arsenic.
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公开(公告)号：US10727405B2
公开(公告)日：2020-07-28
申请号：US16228469
申请日：2018-12-20
Applicant: Micron Technology, Inc.
Inventor： Enrico Varesi , Paolo Fantini , Lorenzo Fratin , Swapnil A. Lengade
Abstract: Systems, devices, and methods related to or that employ chalcogenide memory components and compositions are described. A component of a memory cell, such as a selector device, storage device, or self-selecting memory device, may be made of a chalcogenide material composition. A chalcogenide material may have a composition that includes one or more elements from the boron group, such as boron, aluminum, gallium, indium, or thallium. The chalcogenide material, for instance, may have a composition of selenium, germanium, and at least one of boron, aluminum, gallium, indium, or thallium. The chalcogenide material may in some cases also include arsenic, but may in some cases lack arsenic.
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公开(公告)号：US20190081103A1
公开(公告)日：2019-03-14
申请号：US16184465
申请日：2018-11-08
Applicant: Micron Technology, Inc.
Inventor： Paolo Fantini , F. Daniel Gealy , Enrico Varesi , Swapnil A. Lengade
IPC: H01L27/24 , C01B19/00 , C01B35/14 , H01L27/11514 , H01L27/11507 , H01L45/00
CPC classification number: H01L27/2427 , C01B19/007 , C01B35/14 , G11C11/22 , G11C13/0004 , G11C2213/71 , G11C2213/73 , H01L27/11507 , H01L27/11514 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/143
Abstract: Systems, devices, and methods related to or that employ chalcogenide memory components and compositions are described. A memory device, such as a selector device, may be made of a chalcogenide material composition. A chalcogenide material may have a composition that includes one or more elements from the boron group, such as boron, aluminum, gallium, indium, or thallium. A selector device, for instance, may have a composition of selenium, arsenic, and at least one of boron, aluminum, gallium, indium, or thallium. The selector device may also be composed of germanium or silicon, or both. The relative amount of boron, aluminum, gallium, indium, or thallium may affect a threshold voltage of a memory component, and the relative amount may be selected accordingly. A memory component may, for instance have a composition that includes selenium, arsenic, and some combination of germanium, silicon, and at least one of boron, aluminum, gallium, indium, or thallium.
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14.发明授权公开(公告)号：US10062844B2
公开(公告)日：2018-08-28
申请号：US14857369
申请日：2015-09-17
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Swapnil A. Lengade , John M. Meldrim , Andrea Gotti
CPC classification number: H01L45/1608 , H01L27/2427 , H01L27/2463 , H01L45/06 , H01L45/12 , H01L45/1233 , H01L45/1246 , H01L45/1253 , H01L45/141 , H01L45/144
Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.
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15.发明申请公开(公告)号：US20180130948A1
公开(公告)日：2018-05-10
申请号：US15848477
申请日：2017-12-20
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Swapnil A. Lengade , John M. Meldrim , Andrea Gotti
CPC classification number: H01L45/1608 , H01L27/2427 , H01L27/2463 , H01L45/06 , H01L45/12 , H01L45/1233 , H01L45/1246 , H01L45/1253 , H01L45/141 , H01L45/144
Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, a second electrode portion is coupled to the second chalcogenide structure, and a third electrode portion is between the first and second electrode portions. A first portion of an electrically conductive barrier material is disposed between the first and third electrode portions. A second portion of the electrically conductive barrier material is disposed between the second and third electrode portions.
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Patent Agency Ranking
公开(公告)号：US20140191229A1
公开(公告)日：2014-07-10
申请号：US14158898
申请日：2014-01-20
Applicant: Micron Technology, Inc.
Inventor： Dale W. Collins , D.V. Nirmal Ramaswamy , Matthew N. Rocklein , Swapnil A. Lengade
CPC classification number: H01L29/24 , H01G9/04 , H01L21/02565
Abstract: Semiconductor structures including a zirconium oxide material and methods of forming the same are described herein. As an example, a semiconductor structure can include a zirconium oxide material, a perovskite structure material, and a noble metal material formed between the zirconium oxide material and the perovskite structure material.
Abstract translation: 本文描述了包括氧化锆材料的半导体结构及其形成方法。 作为示例，半导体结构可以包括氧化锆材料，钙钛矿结构材料和形成在氧化锆材料和钙钛矿结构材料之间的贵金属材料。
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公开(公告)号：US20240074177A1
公开(公告)日：2024-02-29
申请号：US17822101
申请日：2022-08-24
Applicant: Micron Technology, Inc.
Inventor： David H. Wells , Justin D. Shepherdson , Swapnil A. Lengade , Collin Howder , Dheeraj Kumar , Andrew L. Li
IPC: H01L27/11582 , H01L27/11556
CPC classification number: H01L27/11582 , H01L27/11556
Abstract: Microelectronic devices include a region with a tiered stack that includes insulative, conductive, and non-conductive structures arranged in tiers. The insulative structures vertically alternate with both the conductive and the non-conductive structures. Each of the conductive structures is vertically spaced from another of the conductive structures by at least one of the non-conductive structures and at least two of the insulative structures. A composition of the non-conductive structures differs from a composition of the insulative structures. In methods of fabrication, a precursor stack is formed to include the insulative structures vertically alternating with first and second non-conductive structures. In a region of the precursor stack, the first non-conductive structures are removed, forming voids between multi-structure tier groups. Conductive structures are formed in the voids. Electronic systems are also disclosed.
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公开(公告)号：US11114615B2
公开(公告)日：2021-09-07
申请号：US16905366
申请日：2020-06-18
Applicant: Micron Technology, Inc.
Inventor： Enrico Varesi , Paolo Fantini , Lorenzo Fratin , Swapnil A. Lengade
Abstract: Systems, devices, and methods related to or that employ chalcogenide memory components and compositions are described. A component of a memory cell, such as a selector device, storage device, or self-selecting memory device, may be made of a chalcogenide material composition. A chalcogenide material may have a composition that includes one or more elements from the boron group, such as boron, aluminum, gallium, indium, or thallium. The chalcogenide material, for instance, may have a composition of selenium, germanium, and at least one of boron, aluminum, gallium, indium, or thallium. The chalcogenide material may in some cases also include arsenic, but may in some cases lack arsenic.
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19.发明授权公开(公告)号：US10957855B2
公开(公告)日：2021-03-23
申请号：US16039769
申请日：2018-07-19
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Swapnil A. Lengade , John M. Meldrim , Andrea Gotti
Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.
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公开(公告)号：US10439000B2
公开(公告)日：2019-10-08
申请号：US16184465
申请日：2018-11-08
Applicant: Micron Technology, Inc.
Inventor： Paolo Fantini , F. Daniel Gealy , Enrico Varesi , Swapnil A. Lengade
IPC: H01L27/24 , C01B19/00 , C01B35/14 , H01L27/11507 , H01L27/11514 , H01L45/00 , G11C11/22 , G11C13/00
Abstract: Systems, devices, and methods related to or that employ chalcogenide memory components and compositions are described. A memory device, such as a selector device, may be made of a chalcogenide material composition. A chalcogenide material may have a composition that includes one or more elements from the boron group, such as boron, aluminum, gallium, indium, or thallium. A selector device, for instance, may have a composition of selenium, arsenic, and at least one of boron, aluminum, gallium, indium, or thallium. The selector device may also be composed of germanium or silicon, or both. The relative amount of boron, aluminum, gallium, indium, or thallium may affect a threshold voltage of a memory component, and the relative amount may be selected accordingly. A memory component may, for instance have a composition that includes selenium, arsenic, and some combination of germanium, silicon, and at least one of boron, aluminum, gallium, indium, or thallium.
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