公开(公告)号：US06841457B2

公开(公告)日：2005-01-11

申请号：US10196611

申请日：2002-07-16

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Devendra K. Sadana

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Devendra K. Sadana

IPC分类号： H01L29/161 ,  H01L21/20 ,  H01L21/265 ,  H01L21/762 ,  H01L21/36

CPC分类号： H01L21/76243 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02664 ,  Y10S438/933

摘要： A method of forming a relaxed SiGe-on-insulator substrate having enhanced relaxation, significantly lower defect density and improved surface quality is provided. The method includes forming a SiGe alloy layer on a surface of a first single crystal Si layer. The first single crystal Si layer has an interface with an underlying barrier layer that is resistant to Ge diffusion. Next, ions that are capable of forming defects that allow mechanical decoupling at or near said interface are implanted into the structure and thereafter the structure including the implanted ions is subjected to a heating step which permits interdiffusion of Ge throughout the first single crystal Si layer and the SiGe layer to form a substantially relaxed, single crystal and homogeneous SiGe layer atop the barrier layer. SiGe-on-insulator substrates having the improved properties as well as heterostructures containing the same are also provided.

公开(公告)号：US06803240B1

公开(公告)日：2004-10-12

申请号：US10654231

申请日：2003-09-03

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Devendra K. Sadana

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Devendra K. Sadana

IPC分类号： H01L21302

CPC分类号： G01N21/9501 ,  G01N21/9505 ,  G01N2021/8461

摘要： Described herein is a method for delineating crystalline defects in a thin Si layer over a SiGe alloy layer. The method uses a defect etchant with a high-defect selectivity in Si. The Si is etched downed to a thickness that allows the defect pits to reach the underlying SiGe layer. A second etchant, which can be the same or different from the defect etchant, is then used which attacks the SiGe layer under the pits while leaving Si intact.

摘要翻译： 这里描述了一种在SiGe合金层上描绘薄Si层中的晶体缺陷的方法。 该方法在Si中具有高缺陷选择性的缺陷蚀刻剂。 将Si蚀刻到允许缺陷凹坑到达下面的SiGe层的厚度。 然后使用可以与缺陷蚀刻剂相同或不同的第二蚀刻剂，其在凹陷下攻击SiGe层，同时保持Si完整。

公开(公告)号：US08709957B2

公开(公告)日：2014-04-29

申请号：US13481062

申请日：2012-05-25

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ibrahim Alhomoudi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ibrahim Alhomoudi

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/304 ,  B81C99/008 ,  H01L21/02002

摘要： A method for spalling local areas of a base substrate utilizing at least one stressor layer portion which is located on a portion, but not all, of an uppermost surface of a base substrate. The method includes providing a base substrate having a uniform thickness and a planar uppermost surface spanning across an entirety of the base substrate. At least one stressor layer portion having a shape is formed on at least a portion, but not all, of the uppermost surface of the base substrate. Spalling is performed which removes a material layer portion from the base substrate and provides a remaining base substrate portion. The material layer portion has the shape of the at least one stressor layer portion, while the remaining base substrate portion has at least one opening located therein which correlates to the shape of the at least one stressor layer.

摘要翻译： 利用位于基底的最上表面的一部分但不是全部的至少一个应力层部分剥离基底基板的局部区域的方法。 该方法包括提供具有均匀厚度的基底基底和跨越整个基底基底的平面最上表面。 至少一个具有形状的应力层部分形成在基底基板的最上表面的至少一部分但不是全部。 进行剥离，其从基底基板移除材料层部分并提供剩余的基底部分。 材料层部分具有至少一个应力层部分的形状，而剩余的基底部分具有位于其中的至少一个与至少一个应力层的形状相关的开口。

公开(公告)号：US08709914B2

公开(公告)日：2014-04-29

申请号：US13159893

申请日：2011-06-14

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Devendra K. Sadana

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Devendra K. Sadana

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/304 ,  H01L31/1896 ,  Y02E10/50 ,  Y02P80/30

摘要： A method of controlled layer transfer is provided. The method includes providing a stressor layer to a base substrate. The stressor layer has a stressor layer portion located atop an upper surface of the base substrate and a self-pinning stressor layer portion located adjacent each sidewall edge of the base substrate. A spalling inhibitor is then applied atop the stressor layer portion of the base substrate, and thereafter the self-pinning stressor layer portion of the stressor layer is decoupled from the stressor layer portion. A portion of the base substrate that is located beneath the stressor layer portion is then spalled from the original base substrate. The spalling includes displacing the spalling inhibitor from atop the stressor layer portion. After spalling, the stressor layer portion is removed from atop a spalled portion of the base substrate.

摘要翻译： 提供了一种受控层转移的方法。 该方法包括向基底基底提供应力层。 应力层具有位于基底基板的上表面顶部的应力层，以及位于基底基板的每个侧壁边缘附近的自锁紧应力层。 然后将剥落抑制剂施加在基底衬底的应力层部分的顶部，然后将应力层的自锁定应力层部分与应力层部分分离。 位于应力层部分之下的基底部分的一部分然后从原始基底剥离。 剥落包括从应力层部分顶部置换剥落抑制剂。 剥落后，从基底基板的剥离部的顶部除去应力层。

公开(公告)号：US08679943B2

公开(公告)日：2014-03-25

申请号：US13215738

申请日：2011-08-23

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Xiao Hu Liu ,  Devendra K. Sadana

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Xiao Hu Liu ,  Devendra K. Sadana

IPC分类号： H01L21/30

CPC分类号： H01L21/30 ,  H01L31/1892 ,  Y02E10/50

摘要： A spalling method is provided that includes depositing a stressor layer on surface of a base substrate, and contacting the stressor layer with a planar transfer. The planar transfer surface is then traversed along a plane that is parallel to and having a vertical offset from the upper surface of the base substrate. The planar transfer surface is traversed in a direction from a first edge of the base substrate to an opposing second edge of the base substrate to cleave the base substrate and transfer a spalled portion of the base substrate to the planar transfer surface. The vertical offset between the plane along which the planar transfer surface is traversed and the upper surface of the base substrate is a fixed distance. The fixed distance of the vertical offset provides a uniform spalling force. A spalling method is also provided that includes a transfer roller.

摘要翻译： 提供了一种剥落方法，其包括在基底表面上沉积应力层，并使应力层与平面转移接触。 然后，平面转移表面沿着平行于并且具有从基底基板的上表面垂直偏移的平面穿过。 平面转移表面在从基底基板的第一边缘到基底基板的相对的第二边缘的方向上穿过，以将基底基板切割并将基底基板的剥离部分转印到平面转印表面。 平面转移面沿着平面移动的平面与基底基板的上表面之间的垂直偏移是固定的距离。 垂直偏移的固定距离提供均匀的剥落力。 还提供了包括转印辊的剥落方法。

公开(公告)号：US20130316542A1

公开(公告)日：2013-11-28

申请号：US13481062

申请日：2012-05-25

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ibrahim Alhomoudi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ibrahim Alhomoudi

IPC分类号： H01L21/31

CPC分类号： H01L21/304 ,  B81C99/008 ,  H01L21/02002

摘要： A method for spalling local areas of a base substrate utilizing at least one stressor layer portion which is located on a portion, but not all, of an uppermost surface of a base substrate. The method includes providing a base substrate having a uniform thickness and a planar uppermost surface spanning across an entirety of the base substrate. At least one stressor layer portion having a shape is formed on at least a portion, but not all, of the uppermost surface of the base substrate. Spalling is performed which removes a material layer portion from the base substrate and provides a remaining base substrate portion. The material layer portion has the shape of the at least one stressor layer portion, while the remaining base substrate portion has at least one opening located therein which correlates to the shape of the at least one stressor layer.

摘要翻译： 利用位于基底的最上表面的一部分但不是全部的至少一个应力层部分剥离基底基板的局部区域的方法。 该方法包括提供具有均匀厚度的基底基底和横跨整个基底基底的平面最上表面。 至少一个具有形状的应力层部分形成在基底基板的最上表面的至少一部分但不是全部。 进行剥离，其从基底基板移除材料层部分并提供剩余的基底部分。 材料层部分具有至少一个应力层部分的形状，而剩余的基底部分具有位于其中的至少一个与至少一个应力层的形状相关的开口。

公开(公告)号：US20130082357A1

公开(公告)日：2013-04-04

申请号：US13253059

申请日：2011-10-04

申请人： Ibrahim Alhomoudi ,  Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

发明人： Ibrahim Alhomoudi ,  Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

IPC分类号： H01L29/16 ,  H01L29/04 ,  H01L21/60

CPC分类号： H01L31/02363 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/03682 ,  Y02E10/544 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A base layer of a semiconductor material is formed with a naturally textured surface. The base layer may be incorporated within a photovoltaic structure. A controlled spalling technique, in which substrate fracture is propagated in a selected direction to cause the formation of facets, is employed. Spalling in the [110] directions of a (001) silicon substrate results in the formation of such facets of the resulting base layer, providing a natural surface texture.

摘要翻译： 半导体材料的基层由天然纹理表面形成。 基底层可以结合在光伏结构内。 使用受控的剥落技术，其中衬底断裂沿所选方向传播以引起小平面的形成。 （001）硅衬底的[110]方向剥落导致所得到的基底层的这种面的形成，提供了自然的表面纹理。

公开(公告)号：US20130052798A1

公开(公告)日：2013-02-28

申请号：US13215738

申请日：2011-08-23

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Xiao Hu Liu ,  Devendra K. Sadana

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Xiao Hu Liu ,  Devendra K. Sadana

IPC分类号： H01L21/30

CPC分类号： H01L21/30 ,  H01L31/1892 ,  Y02E10/50

摘要： A spalling method is provided that includes depositing a stressor layer on surface of a base substrate, and contacting the stressor layer with a planar transfer. The planar transfer surface is then traversed along a plane that is parallel to and having a vertical offset from the upper surface of the base substrate. The planar transfer surface is traversed in a direction from a first edge of the base substrate to an opposing second edge of the base substrate to cleave the base substrate and transfer a spalled portion of the base substrate to the planar transfer surface. The vertical offset between the plane along which the planar transfer surface is traversed and the upper surface of the base substrate is a fixed distance. The fixed distance of the vertical offset provides a uniform spalling force. A spalling method is also provided that includes a transfer roller.

摘要翻译： 提供了一种剥落方法，其包括在基底表面上沉积应力层，并使应力层与平面转移接触。 然后，平面转移表面沿着平行于并且具有从基底基板的上表面垂直偏移的平面穿过。 平面转移表面在从基底基板的第一边缘到基底基板的相对的第二边缘的方向上穿过，以将基底基板切割并将基底基板的剥离部分转印到平面转印表面。 平面转移面沿着平面移动的平面与基底基板的上表面之间的垂直偏移是固定的距离。 垂直偏移的固定距离提供均匀的剥落力。 还提供了包括转印辊的剥落方法。

公开(公告)号：US20130025654A1

公开(公告)日：2013-01-31

申请号：US13193871

申请日：2011-07-29

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/06 ,  H01L31/18

CPC分类号： H01L31/1892 ,  H01L31/02167 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/0747 ,  H01L31/076 ,  H01L31/1808 ,  H01L31/1812 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of forming a photovoltaic device that includes bonding a substrate to a germanium-containing semiconductor layer with a stressor layer, wherein the stressor layer cleaves the germanium-containing semiconductor layer. At least one semiconductor layer is formed on a cleaved surface of the germanium-containing semiconductor layer that is opposite the conductivity type of the germanium-containing semiconductor layer to provide a first solar cell. The first solar cell absorbs a first range of wavelengths. At least one second solar cell may be formed on the first solar cell, wherein the at least one second solar cell is composed of at least one semiconductor material to absorb a second range of wavelengths that is different than the first range wavelengths absorbed by the first solar cell.

摘要翻译： 一种形成光伏器件的方法，该光电器件包括将衬底粘合到含锗半导体层与应力层，其中所述应力层切割含锗半导体层。 在与含锗半导体层的导电类型相反的含锗半导体层的切割表面上形成至少一个半导体层以提供第一太阳能电池。 第一太阳能电池吸收第一波长范围。 可以在第一太阳能电池上形成至少一个第二太阳能电池，其中至少一个第二太阳能电池由至少一个半导体材料组成，以吸收不同于由第一太阳能电池吸收的第一范围波长的第二波长范围 太阳能电池。

公开(公告)号：US08227792B2

公开(公告)日：2012-07-24

申请号：US12031530

申请日：2008-02-14

申请人： Paul D. Agnello ,  Stephen W. Bedell ,  Robert H. Dennard ,  Anthony G. Domenicucci ,  Keith E. Fogel ,  Devendra K. Sadana

发明人： Paul D. Agnello ,  Stephen W. Bedell ,  Robert H. Dennard ,  Anthony G. Domenicucci ,  Keith E. Fogel ,  Devendra K. Sadana

IPC分类号： H01L31/00

CPC分类号： H01L21/324 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02664 ,  H01L21/7624 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84 ,  H01L29/66893 ,  H01L29/78603

摘要： Thermal mixing methods of forming a substantially relaxed and low-defect SGOI substrate material are provided. The methods include a patterning step which is used to form a structure containing at least SiGe islands formed atop a Ge resistant diffusion barrier layer. Patterning of the SiGe layer into islands changes the local forces acting at each of the island edges in such a way so that the relaxation force is greater than the forces that oppose relaxation. The absence of restoring forces at the edges of the patterned layers allows the final SiGe film to relax further than it would if the film was continuous.

摘要翻译： 提供形成基本上松弛和低缺陷的SGOI基底材料的热混合方法。 所述方法包括图形化步骤，其用于形成至少包含形成在Ge抗蚀扩散阻挡层顶上的SiGe岛的结构。 将SiGe层图案化成岛以这样的方式改变作用在每个岛边缘处的局部力，使得松弛力大于抵抗放松的力。 在图案化层的边缘处没有恢复力允许最终的SiGe膜比如果膜是连续的那样进一步松弛。