Over charge protection device
    11.
    发明授权
    Over charge protection device 有权
    过充电保护装置

    公开(公告)号:US07262467B2

    公开(公告)日:2007-08-28

    申请号:US10930276

    申请日:2004-08-30

    申请人: Ulrich Kelberlau

    发明人: Ulrich Kelberlau

    IPC分类号: H01L23/60

    摘要: An over-voltage protection device includes a substrate including an upper surface and a lower surface; a first electrode provided on the upper surface of the substrate; a second electrode provided on the lower surface on the substrate; a first conductive layer overlying the lower surface of the substrate, the first conductive region being a conductive region of a first type; a plurality of first conductive regions provided proximate the upper surface of the substrate, the plurality of first conductive regions being conductive regions of the first type; and a plurality of second conductive region provided proximate the upper surface of the substrate, the plurality of second conductive region being conductive regions of a second type. The plurality of the first conductive regions are provided in an alternating manner with the plurality of second conductive regions. The first electrode is contacting the plurality of the first and second conductive regions.

    摘要翻译: 一种过电压保护装置,包括:包括上表面和下表面的基板; 设置在所述基板的上表面上的第一电极; 设置在所述基板的下表面上的第二电极; 覆盖所述基板的下表面的第一导电层,所述第一导电区域是第一类型的导电区域; 设置在所述基板的上表面附近的多个第一导电区域,所述多个第一导电区域是所述第一类型的导电区域; 以及靠近所述衬底的上表面设置的多个第二导电区域,所述多个第二导电区域是第二类型的导电区域。 多个第一导电区域以多个第二导电区域交替地设置。 第一电极接触多个第一和第二导电区域。

    High voltage power MOS device
    13.
    发明授权
    High voltage power MOS device 失效
    高压功率MOS器件

    公开(公告)号:US06259123B1

    公开(公告)日:2001-07-10

    申请号:US09111151

    申请日:1998-07-06

    IPC分类号: H01L21332

    CPC分类号: H01L29/7395 H01L29/0834

    摘要: A switching device is described having a semiconductor substrate with a front side and a back side. The switching device includes a first transistor which includes a first region adjacent the front side, a second region within the first region, the semiconductor substrate, and at least one island region adjacent the backside. The switching device also includes a second transistor which includes the first region, the second region, the semiconductor substrate, and a third region coupled to the at least one island region.

    摘要翻译: 描述了具有前侧和后侧的半导体衬底的开关器件。 开关器件包括第一晶体管,其包括邻近前侧的第一区域,第一区域内的第二区域,半导体衬底以及与背面相邻的至少一个岛区域。 开关器件还包括第二晶体管,其包括第一区域,第二区域,半导体衬底以及耦合到至少一个岛区域的第三区域。

    High voltage power MOS device
    14.
    发明授权
    High voltage power MOS device 失效
    高压功率MOS器件

    公开(公告)号:US5851857A

    公开(公告)日:1998-12-22

    申请号:US706513

    申请日:1996-09-04

    CPC分类号: H01L29/7395 H01L29/0834

    摘要: A switching device is described having a semiconductor substrate with a front side and a back side. The switching device includes a first transistor which includes a first region adjacent the front side, a second region within the first region, the semiconductor substrate, and at least one island region adjacent the backside. The switching device also includes a second transistor which includes the first region, the second region, the semiconductor substrate, and a third region coupled to the at least one island region.

    摘要翻译: 描述了具有前侧和后侧的半导体衬底的开关器件。 开关器件包括第一晶体管,其包括邻近前侧的第一区域,第一区域内的第二区域,半导体衬底以及与背面相邻的至少一个岛区域。 开关器件还包括第二晶体管,其包括第一区域,第二区域,半导体衬底以及耦合到至少一个岛区域的第三区域。