公开(公告)号：US08866175B2

公开(公告)日：2014-10-21

申请号：US13821554

申请日：2011-08-22

申请人： Karl Engl ,  Markus Maute ,  Andreas Weimar ,  Lutz Hoeppel ,  Patrick Rode ,  Juergen Moosburger ,  Norwin von Malm

发明人： Karl Engl ,  Markus Maute ,  Andreas Weimar ,  Lutz Hoeppel ,  Patrick Rode ,  Juergen Moosburger ,  Norwin von Malm

IPC分类号： H01L33/00 ,  H01L33/62 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/22 ,  H01L33/20

CPC分类号： H01L33/62 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The mirror layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip.

摘要翻译： 光电子半导体芯片包括半导体层序列和载体基板。 第一和第二电接触层至少布置在载体衬底和半导体层序列之间的区域中，并且通过电绝缘层彼此电绝缘。 半导体层序列和载体基板之间布置有镜层。 镜层邻接第一电接触层的部分区域和电绝缘层的部分区域。 邻接镜面层的电绝缘层的部分区域被第二电接触层覆盖，使得它们不会与光电子半导体芯片的周围介质邻接。

公开(公告)号：US20130228819A1

公开(公告)日：2013-09-05

申请号：US13821554

申请日：2011-08-22

申请人： Karl Engl ,  Markus Maute ,  Andreas Weimar ,  Lutz Hoeppel ,  Patrick Rode ,  Juergen Moosburger ,  Norwin von Malm

发明人： Karl Engl ,  Markus Maute ,  Andreas Weimar ,  Lutz Hoeppel ,  Patrick Rode ,  Juergen Moosburger ,  Norwin von Malm

IPC分类号： H01L33/62

CPC分类号： H01L33/62 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The minor layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip.

摘要翻译： 光电子半导体芯片包括半导体层序列和载体基板。 第一和第二电接触层至少布置在载体衬底和半导体层序列之间的区域中，并且通过电绝缘层彼此电绝缘。 半导体层序列和载体基板之间布置有镜层。 次层邻接第一电接触层的部分区域和电绝缘层的部分区域。 邻接镜面层的电绝缘层的部分区域被第二电接触层覆盖，使得它们不会与光电子半导体芯片的周围介质邻接。

公开(公告)号：US20130221390A1

公开(公告)日：2013-08-29

申请号：US13820306

申请日：2011-08-24

申请人： Karl Engl ,  Markus Maute ,  Stefanie Rammelsberger

发明人： Karl Engl ,  Markus Maute ,  Stefanie Rammelsberger

IPC分类号： H01L33/46

CPC分类号： H01L33/46 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting diode chip having a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light-emitting diode chip has, on a front side, a radiation exit surface, at least regions of the light-emitting diode chip have, on a rear side opposite the radiation exit surface, a mirror layer containing silver, a protective layer containing Pt is disposed on the mirror layer, and the protective layer has a structure that covers the mirror layer only in sub-regions.

摘要翻译： 一种具有半导体层序列的发光二极管芯片，具有产生电磁辐射的有源层，其中所述发光二极管芯片在正面具有辐射出射表面，至少所述发光二极管芯片的区域具有 在与辐射出射面相反的后侧，在镜面层上配置有含有银的镜面层，含有Pt的保护层，保护层仅具有仅在子区域覆盖镜面层的结构。

公开(公告)号：US20130146910A1

公开(公告)日：2013-06-13

申请号：US13581417

申请日：2011-02-15

申请人： Markus Maute ,  Karl Engl ,  Stefanie Rammelsberger ,  Nikolaus Gmeinwieser ,  Johann Eibl

发明人： Markus Maute ,  Karl Engl ,  Stefanie Rammelsberger ,  Nikolaus Gmeinwieser ,  Johann Eibl

IPC分类号： H01L33/60

CPC分类号： H01L33/60 ,  H01L33/20 ,  H01L33/382 ,  H01L33/405 ,  H01L33/46 ,  H01L33/54 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light emitting diode chip includes a semiconductor layer sequence, the semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side. At a rear side lying opposite the radiation exit area, the light emitting diode chip has, at least in regions, a mirror layer containing silver. A functional layer that reduces corrosion and/or improves adhesion of the mirror layer is arranged on the mirror layer, wherein a material from which the functional layer is formed is also distributed in the entire mirror layer. The material of the functional layer has a concentration gradient in the mirror layer, wherein the concentration of the material of the functional layer in the mirror layer decreases proceeding from the functional layer in the direction toward the semiconductor layer sequence.

摘要翻译： 发光二极管芯片包括半导体层序列，所述半导体层序列具有产生电磁辐射的有源层，其中所述发光二极管芯片在前侧具有辐射出射区域。 在与辐射出口区域相对的后侧，发光二极管芯片至少在区域中具有含有银的镜面层。 降低镜面层的腐蚀和/或改善粘合性的功能层被布置在镜面层上，其中形成功能层的材料也分布在整个镜面层中。 功能层的材料在镜面层中具有浓度梯度，其中镜面层中的功能层的材料的浓度从功能层朝向半导体层序列的方向减小。

公开(公告)号：US08772911B2

公开(公告)日：2014-07-08

申请号：US13580646

申请日：2011-02-10

申请人： Tony Albrecht ,  Markus Maute ,  Martin Reufer ,  Heribert Zull

发明人： Tony Albrecht ,  Markus Maute ,  Martin Reufer ,  Heribert Zull

IPC分类号： H01L29/06

CPC分类号： H01L33/38 ,  H01L33/025 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： A semiconductor diode has a first semiconductor layer (102) of a first conductivity type and a second semiconductor layer of a second conductivity type having a doping. The second semiconductor layer has a vertical electrical via region (106) which is connected to the first semiconductor layer and in which the doping is modified in such a way that the electrical via region (106) has the first conductivity type. A method for producing such a semiconductor diode is described.

摘要翻译： 半导体二极管具有第一导电类型的第一半导体层（102）和具有掺杂的第二导电类型的第二半导体层。 第二半导体层具有连接到第一半导体层的垂直电通孔区域（106），并且其中掺杂被修改为使得电通孔区域（106）具有第一导电类型。 描述了制造这种半导体二极管的方法。

公开(公告)号：US20140138730A1

公开(公告)日：2014-05-22

申请号：US14126033

申请日：2012-06-01

申请人： Martin Reufer ,  Markus Maute ,  Tony Albrecht

发明人： Martin Reufer ,  Markus Maute ,  Tony Albrecht

IPC分类号： H01L33/24 ,  H01L33/00

CPC分类号： H01L33/24 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/32 ,  H01L33/44

摘要： A method of producing a plurality of optoelectronic semiconductor chips is provided. At least one trench is incorporated into the semiconductor body by means of at least one structuring process. The trench breaks through the active zone in a vertical direction. At least one cleaning process is performed at least on exposed locations of the semiconductor body in the region of the trench. The cleaning process includes at least one plasma cleaning process, and the plasma cleaning process at least reduces a number and/or a spatial expansion of structuring residues at exposed locations of the semiconductor body at least in the region of the trench. At least one passivation layer is applied at least to exposed locations of the semiconductor body in the region of the trench.

摘要翻译： 提供了一种制造多个光电子半导体芯片的方法。 通过至少一个结构化工艺将至少一个沟槽结合到半导体本体中。 沟槽在垂直方向穿过活动区域。 至少在沟槽区域中至少在半导体本体的暴露位置上进行至少一次清洁处理。 清洁过程包括至少一个等离子体清洁过程，并且等离子体清洁过程至少在沟槽的区域中减少半导体本体的暴露位置处的构造残余物的数量和/或空间扩展。 至少一个钝化层至少施加到沟槽区域中的半导体本体的暴露位置。

公开(公告)号：US08273588B2

公开(公告)日：2012-09-25

申请号：US12838075

申请日：2010-07-16

申请人： Berthold Hahn ,  Markus Maute ,  Siegfried Herrmann

发明人： Berthold Hahn ,  Markus Maute ,  Siegfried Herrmann

IPC分类号： H01L21/00

CPC分类号： H01L25/167 ,  H01L2224/16225 ,  H01L2924/13091 ,  H01L2924/00

摘要： A method for producing a luminous device is specified. A number of light emitting diodes each have a radiation-transmissive carrier and at least two semiconductor bodies spatially separated from one another. Each semiconductor body is provided for generating electromagnetic radiation. The semiconductor bodies can be driven separately from one another and the semiconductor bodies are arranged at the top side of the radiation-transmissive carrier on the radiation-transmissive carrier. A chip assemblage is composed of CMOS chips each of which has at least two connection locations at its top side. At least one of the light emitting diodes is connected to one of the CMOS chips. The light emitting diode is arranged, at the top side of the radiation-transmissive carrier, at the top side of the CMOS chip and each semiconductor body of the light emitting diode is connected to a connection location of the CMOS chip.

摘要翻译： 规定了发光装置的制造方法。 多个发光二极管各自具有辐射透射载体和在空间上彼此分离的至少两个半导体体。 每个半导体本体被提供用于产生电磁辐射。 半导体本体可以彼此分开地驱动，并且半导体本体被布置在辐射透射载体上的辐射透射性载体的顶侧。 芯片组合由CMOS芯片组成，每个芯片在其顶侧具有至少两个连接位置。 至少一个发光二极管连接到CMOS芯片之一。 发光二极管在辐射透射载体的顶侧设置在CMOS芯片的顶侧，并且发光二极管的每个半导体本体连接到CMOS芯片的连接位置。

公开(公告)号：US09041014B2

公开(公告)日：2015-05-26

申请号：US14009921

申请日：2012-03-15

申请人： Markus Maute ,  Jürgen Moosburger ,  Simon Jerebic

发明人： Markus Maute ,  Jürgen Moosburger ,  Simon Jerebic

IPC分类号： H01L33/00 ,  H01L33/48 ,  H01L33/50 ,  H01L33/20 ,  H01L33/44 ,  H01L33/56

CPC分类号： H01L33/60 ,  H01L33/20 ,  H01L33/44 ,  H01L33/48 ,  H01L33/486 ,  H01L33/501 ,  H01L33/56 ,  H01L2933/0091

摘要： A method of producing an optoelectronic component includes providing a semiconductor chip having an active layer that generates radiation and is arranged on a carrier, applying a dispersed material including a matrix material and particles embedded therein to the semiconductor chip and/or the carrier at least in regions, wherein before the dispersed material is applied, at least one chip edge of the semiconductor chip facing away from the carrier is modified such that the dispersed material at least partly separates into its constituents during application at the chip edge.

摘要翻译： 制造光电子部件的方法包括提供具有产生辐射的有源层的半导体芯片，并且布置在载体上，将包含基质材料的分散材料和嵌入其中的颗粒施加到半导体芯片和/或载体上至少在 区域，其中在施加分散的材料之前，半导体芯片的远离载体的至少一个芯片边缘被修改，使得分散的材料在芯片边缘的施加期间至少部分地分离成其组成。

公开(公告)号：US20110012142A1

公开(公告)日：2011-01-20

申请号：US12838075

申请日：2010-07-16

申请人： Berthold Hahn ,  Markus Maute ,  Siegfried Herrmann

发明人： Berthold Hahn ,  Markus Maute ,  Siegfried Herrmann

IPC分类号： H01L33/62 ,  H01L33/48

CPC分类号： H01L25/167 ,  H01L2224/16225 ,  H01L2924/13091 ,  H01L2924/00

摘要： A method for producing a luminous device is specified. A number of light emitting diodes each have a radiation-transmissive carrier and at least two semiconductor bodies spatially separated from one another. Each semiconductor body is provided for generating electromagnetic radiation. The semiconductor bodies can be driven separately from one another and the semiconductor bodies are arranged at the top side of the radiation-transmissive carrier on the radiation-transmissive carrier. A chip assemblage is composed of CMOS chips each of which has at least two connection locations at its top side. At least one of the light emitting diodes is connected to one of the CMOS chips. The light emitting diode is arranged, at the top side of the radiation-transmissive carrier, at the top side of the CMOS chip and each semiconductor body of the light emitting diode is connected to a connection location of the CMOS chip.

摘要翻译： 规定了发光装置的制造方法。 多个发光二极管各自具有辐射透射载体和在空间上彼此分离的至少两个半导体体。 每个半导体本体被提供用于产生电磁辐射。 半导体本体可以彼此分开地驱动，并且半导体本体被布置在辐射透射载体上的辐射透射性载体的顶侧。 芯片组合由CMOS芯片组成，每个芯片在其顶侧具有至少两个连接位置。 至少一个发光二极管连接到CMOS芯片之一。 发光二极管在辐射透射载体的顶侧设置在CMOS芯片的顶侧，并且发光二极管的每个半导体本体连接到CMOS芯片的连接位置。

公开(公告)号：US20140061676A1

公开(公告)日：2014-03-06

申请号：US14009921

申请日：2012-03-15

申请人： Markus Maute ,  Jürgen Moosburger ,  Simon Jerebic

发明人： Markus Maute ,  Jürgen Moosburger ,  Simon Jerebic

IPC分类号： H01L33/48

CPC分类号： H01L33/60 ,  H01L33/20 ,  H01L33/44 ,  H01L33/48 ,  H01L33/486 ,  H01L33/501 ,  H01L33/56 ,  H01L2933/0091

摘要： A method of producing an optoelectronic component includes providing a semiconductor chip having an active layer that generates radiation and is arranged on a carrier, applying a dispersed material including a matrix material and particles embedded therein to the semiconductor chip and/or the carrier at least in regions, wherein before the dispersed material is applied, at least one chip edge of the semiconductor chip facing away from the carrier is modified such that the dispersed material at least partly separates into its constituents during application at the chip edge.

摘要翻译： 制造光电子部件的方法包括提供具有产生辐射的有源层的半导体芯片，并且布置在载体上，将包含基质材料的分散材料和嵌入其中的颗粒施加到半导体芯片和/或载体上至少在 区域，其中在施加分散的材料之前，半导体芯片的远离载体的至少一个芯片边缘被修改，使得分散的材料在芯片边缘的施加期间至少部分地分离成其组成。