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公开(公告)号：US5182758A
公开(公告)日：1993-01-26
申请号：US802118
申请日：1991-12-04
CPC分类号： H01S5/1228 , H01S5/227 , H01S5/2201 , H01S5/32308
摘要： A periodic gain-type semiconductor laser device in which a mesa stripe has wide portions and narrow portions alternately arranged with a period that is an integral multiple of the half-wavelength of the emitted light. A multilayer structure including an n-AlGaAs first cladding layer 103 and an AlGaAs non-doped active layer 104 formed on the mesa stripe also have wide portions and narrow portions. An n-AlGaAs current confining layer 106 covers the sides of the AlGaAs non-doped active layer 104. The height of the top surface of the n-AlGaAs current confining layer 106 matches the height of the AlGaAs non-doped active layer 104. A p-AlGaAs second cladding layer 105 is formed on the AlGaAs non-doped active layer 104 and the current confining layer 106. A driving current is not injected into the narrow portions of the AlGaAs non-doped active layer 104.
摘要翻译： 一种周期性增益型半导体激光装置，其中台面条具有宽的部分，并且窄周期以发射的光的半波长的整数倍的周期交替布置。 包括形成在台面条上的n-AlGaAs第一包层103和AlGaAs非掺杂有源层104的多层结构也具有宽部分和窄部分。 n-AlGaAs电流限制层106覆盖AlGaAs非掺杂有源层104的侧面.n-AlGaAs电流限制层106的顶表面的高度与AlGaAs非掺杂有源层104的高度匹配。 在AlGaAs非掺杂有源层104和电流限制层106上形成p-AlGaAs第二包层105.驱动电流不被注入到AlGaAs非掺杂有源层104的窄部分中。
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公开(公告)号：US5070510A
公开(公告)日：1991-12-03
申请号：US625169
申请日：1990-12-10
申请人： Fumihiro Konushi , Hiroshi Nakatu , Kazuhiko Inoguchi , Toshiyuki Okumura , Akinori Seki , Haruhisa Takiguchi , Chitose Nakanishi , Satoshi Sugahara , Hiroaki Kudo
发明人： Fumihiro Konushi , Hiroshi Nakatu , Kazuhiko Inoguchi , Toshiyuki Okumura , Akinori Seki , Haruhisa Takiguchi , Chitose Nakanishi , Satoshi Sugahara , Hiroaki Kudo
CPC分类号： H01S5/227 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L33/0062 , H01S5/20 , H01S5/4031 , H01S5/12 , H01S5/1228 , H01S5/2059 , H01S5/2201 , H01S5/2213 , H01S5/2272 , H01S5/2275 , H01S5/32391 , H01S5/4037
摘要： A semiconductor laser device having a mesa stripe whose side faces are facets of {111} planes is disclosed. In the laser device, a current blocking layer is formed on a semiconductor substrate whose main surface is a (100) plane, and a channel which is oriented along the direction is formed in the current blocking layer. The mesa stripe is formed on the substrate within the channel by a selective growth technique. The mesa stripe has a multilayer structure including an active layer and is covered by a burying layer.
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公开(公告)号：US5027368A
公开(公告)日：1991-06-25
申请号：US394327
申请日：1989-08-16
摘要： A semiconductor laser device with a resonator containing an active region for laser oscillating operation is disclosed which comprises a third-order diffraction grating with a periodic corrugation for producing feedback of laser light, the corrugation being of substantially rectangular shape, wherein the ratio of the width of each convex portion of the corrugation to the periodicity of the corrugation is in the range of 0.20 to 0.25, 0.40 to 0.60, or 0.70 to 0.95.
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公开(公告)号：US4901328A
公开(公告)日：1990-02-13
申请号：US380745
申请日：1989-07-17
CPC分类号： H01S5/24 , H01S5/028 , H01S5/1039 , H01S5/20
摘要： A V-channeled substrate inner strip (VSIS) semiconductor laser includes a p-Ga.sub.1-31 y Al.sub.y As active layer sandwiched between a P-Ga.sub.1-x Al.sub.x As first cladding layer and an n-Ga.sub.1-x Al.sub.x As second cladding layer. The AlAs mole fraction x of the first and second cladding layers is selected between about 0.45 and 0.52 in order to minimize the mode competition noise at an operating temperature. In a preferred form, the cavity length is longer than 300 .mu.m so as to minimize the occurrence of the mode competition noise at the operating temperature. Furthermore, the reflectivity R.sub.1 of the front facet and the reflectivity R.sub.2 of the rear facet are selected to satisfy the condition 0.1.ltoreq.ln(1/R.sub.1 .multidot.R.sub.2).ltoreq.1.
摘要翻译： V沟道衬底内条（VSIS）半导体激光器包括夹在P-Ga1-xAlxAs第一包层和n-Ga1-xAlxAs第二覆层之间的p-Ga1-31 yAlyAs有源层。 第一和第二包覆层的AlAs摩尔分数x在约0.45和0.52之间选择，以便使工作温度下的模式竞争噪声最小化。 在优选的形式中，空腔长度大于300μm，以便在工作温度下最小化模式竞争噪声的发生。 此外，选择前面的反射率R1和后面的反射率R2以满足条件0.1
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公开(公告)号：US4862472A
公开(公告)日：1989-08-29
申请号：US143730
申请日：1988-01-14
CPC分类号： H01S5/2231 , H01S5/0421 , H01S5/2206 , H01S5/3211 , H01S5/32316 , H01S5/32391
摘要： A semiconductor laser device comprising a double-heterostructure that is composed of an active layer and a pair of cladding layers sandwiching the active layer therebetween, and a stripe structure that is disposed on the double-heterostructure, the stripe structure being composed of a current blocking layer with a conductive type different from that of the adjacent cladding layer, and the current blocking layer having a striped groove constituting a current path, wherein the cladding layer that contacts the current blocking layer is composed of an In.sub.1-s Ga.sub.s P.sub.1-t As.sub.t crystal material (wherein 0.51.ltoreq.s.ltoreq.1, 0.ltoreq.t.ltoreq.1 and s=2.04t-1.04).
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16.发明授权
公开(公告)号：US4858215A
公开(公告)日：1989-08-15
申请号：US95566
申请日：1987-09-10
CPC分类号： G11B7/1384 , G11B7/0912 , G11B7/124
摘要： An integrated optical disc pickup comprising an optical waveguide in the form of a insulation layer provided on the surface of a substrate, a semiconductor laser disposed outside the waveguide, a beam splitter of the transmission type and a Luneburg lens provided on the path of propagation of a laser beam from the semiconductor laser through the waveguide and arranged in the order mentioned in a direction away from the laser, a transmission grating provided on the path through the waveguide to be followed by the laser beam upon having its direction changed by the beam splitter after emanating from the laser, passing through the beam splitter and the Luneburg lens, being reflected from an optical disc disposed outside the waveguide and passing through the Luneburg lens, and first and second photodetectors disposed on the paths of propagation through the waveguide of two portions of the laser beam divided by the diffraction grating.
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公开(公告)号：US4849985A
公开(公告)日：1989-07-18
申请号：US104315
申请日：1987-10-02
CPC分类号： H01S5/12 , H01S5/1082 , H01S5/4031
摘要： A distributed feedback semiconductor laser device comprising a laser oscillation region and a distributed reflector which are provided in a laminated crystal structure, and comprising facets at both the ends, wherein a light emitting face is disposed at one or both ends of the laser oscillation region, the face being parallel to the lamination direction and intersecting with the light emitting direction at an angle which is 90 degrees minus the Bresster angle.
摘要翻译： 一种分布式反馈半导体激光器件，包括激光振荡区域和分布式反射器，其设置在层叠晶体结构中，并且包括在两端的刻面，其中发光面设置在激光振荡区域的一端或两端， 该面平行于层叠方向，并以90度减去Bresster角度的角度与发光方向相交。
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公开(公告)号：US4745616A
公开(公告)日：1988-05-17
申请号：US830864
申请日：1986-02-19
CPC分类号： H01S5/12
摘要： A semiconductor laser device comprising a GaAlAs first cladding layer, a Ga.sub.1-x Al.sub.x As (0.ltoreq.x.ltoreq.0.4) active layer for laser oscillation, an In.sub.1-y Ga.sub.y P.sub.1-z As.sub.z (z=2.04y-1.04, and 0.ltoreq.z.ltoreq.1) optical guiding layer with a diffraction grating thereon, a GaAlAs buffer layer disposed between said active layer and said optical guiding layer, and a GaAlAs second cladding layer, the width of the forbidden band of said buffer layer being greater than that of the active layer and smaller than that of the optical guiding layer.
摘要翻译： 包括GaAlAs第一包层，用于激光振荡的Ga1-xAlxAs（0≤x≤0.4）有源层，In1-yGayP1-zAsz（z = 2.04y-1.04和0）的半导体激光器件， = z 1）具有衍射光栅的光导层，设置在所述有源层和所述光导层之间的GaAlAs缓冲层和GaAlAs第二包层，所述缓冲层的禁带的宽度更大 比活性层的厚度小，而且比光导层的面积小。
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公开(公告)号：US4745615A
公开(公告)日：1988-05-17
申请号：US789787
申请日：1985-10-21
CPC分类号： H01S5/32308 , H01S5/12 , H01S5/3211
摘要： A semiconductor laser device for laser oscillation at a wavelength in the range of from 660 nm to 890 nm which includes an active layer of Ga.sub.1-x Al.sub.x As (0.ltoreq.x.ltoreq.0.4) or In.sub.1-y Ga.sub.y P.sub.1-z As.sub.z (0.51.ltoreq.y.ltoreq.1, 0.ltoreq.z.ltoreq.1, and z=2.04y-1.04) and a layer with a diffraction grating thereon of In.sub.1-y Ga.sub.y P.sub.1-z As (z=2.04y-1.04) which is adjacent to the active layer.
摘要翻译： 用于在660nm至890nm范围内的波长的激光振荡的半导体激光器件，其包括Ga1-xAlxAs（0≤x≤0.4）或In1-yGayP1-zAsz有效层（0.51 < = y 1 = 0,0 / z = 1，z = 2.04y-1.04）和其上具有In1-yGayP1-zAs（z = 2.04y-1.04）的衍射光栅的层，其相邻 到活动层。
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公开(公告)号：US4712219A
公开(公告)日：1987-12-08
申请号：US716222
申请日：1985-03-26
CPC分类号： H01S5/32325 , H01S5/24 , H01S5/0206
摘要： A visible double heterostructure-semiconductor laser comprising an InGaAs, InAlP, InAlAs, InAlSb or InGaSb layer, a first cladding layer on the InGaAs, InAlP, InAlAs, InAlSb or InGaSb layer; an active layer on the first cladding layer and a second cladding layer on the active layer, wherein a mixed crystal of, respectively InGaAs, InAlP, InAlAs, InAlSb or InGaSb is used, as a substrate crystal for growing of said InGaAs, InAlP, InAlAs, InAlSb or InGaSb layer thereon, and the composition ratio of the substrate crystal and of each of the layers is selected so as to result in the approximate coincidence between the lattice constant of the substrate crystal and the lattice constant of each of these layers, an energy difference of 0.2 eV or more between the direct transition and the indirect transition within said active layer, and an energy difference of 0.2 eV or more between the active layer and either of the first or the second cladding layers.
摘要翻译： 包括InGaAs，InAlP，InAlAs，InAlSb或InGaSb层的可见双异质结构半导体激光器，InGaAs，InAlP，InAlAs，InAlSb或InGaSb层中的第一包层; 在第一包层上的有源层和有源层上的第二包层，其中使用分别为InGaAs，InAlP，InAlAs，InAlSb或InGaSb的混晶，作为用于生长所述InGaAs，InAlP，InAlAs的衬底晶体 ，InAlSb或InGaSb层，并且选择基板晶体和各层的组成比，从而导致基板晶体的晶格常数和这些层的晶格常数之间的近似一致， 所述有源层内的直接跃迁和间接跃迁之间的能量差为0.2eV以上，并且在有源层与第一或第二覆层中的任一层之间的能量差为0.2eV以上。
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