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    MAGNETORESISTIVE HEAD HAVING FERROMAGNETIC TUNNEL JUNCTION FILM WITH A SMALLER RESISTANCE AT A TERMINAL PORTION THAN A CENTRAL PORTION, MAGNETIC RESISTANCE DETECTION SYSTEM WITH THE MAGNETORESISTIVE HEAD AND A MAGNETIC STORAGE SYSTEM USING IT
    11.
    发明授权
    MAGNETORESISTIVE HEAD HAVING FERROMAGNETIC TUNNEL JUNCTION FILM WITH A SMALLER RESISTANCE AT A TERMINAL PORTION THAN A CENTRAL PORTION, MAGNETIC RESISTANCE DETECTION SYSTEM WITH THE MAGNETORESISTIVE HEAD AND A MAGNETIC STORAGE SYSTEM USING IT 有权
    具有终端部分的电阻较小的中央部分，具有磁阻头的磁阻电阻检测系统和使用其的磁性存储系统的磁致伸缩膜

    公开(公告)号：US06538861B1

    公开(公告)日：2003-03-25

    申请号：US09597458

    申请日：2000-06-19

    申请人： Kazuhiko Hayashi ,  Masafumi Nakada ,  Eizo Fukami ,  Kiyokazu Nagahara ,  Hiroaki Honjou ,  Kunihiko Ishihara ,  Tamaki Toba ,  Hisanao Tsuge ,  Atsushi Kamijo

    发明人： Kazuhiko Hayashi ,  Masafumi Nakada ,  Eizo Fukami ,  Kiyokazu Nagahara ,  Hiroaki Honjou ,  Kunihiko Ishihara ,  Tamaki Toba ,  Hisanao Tsuge ,  Atsushi Kamijo

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  H01F10/3254

    摘要： A magnetoresistive head whose operation depends on a magnetoresistive effect is configured using a ferromagnetic tunnel junction (MTJ) film, which is arranged between a lower electrode and an upper electrode. The ferromagnetic tunnel junction film is basically configured using a set of a free layer, a barrier layer and a fixing layer, which are sequentially formed and laminated on the lower electrode. Herein, the ferromagnetic tunnel junction film is designed to avoid electrostatic destruction in manufacture by prescribed measures. For example, the barrier layer is reduced in thickness at a terminal portion as compared with a center portion. Or, the barrier layer has a defect at the terminal portion. In addition, it is possible to provide a conductor in connection with the barrier layer in proximity to its terminal portion. Further, it is possible to attach re-adhesive substance, which is produced by milling for patterning of the ferromagnetic tunnel junction film, to a specific terminal surface of the ferromagnetic tunnel junction film which is opposite to an ABS plane. Those measures provide a bypass allowing overcurrent release between the free layer and fixing layer. Moreover, adjustment milling or plasma oxidation is employed to control an amount of the re-adhesive substance being attached to the terminal surface of the ferromagnetic tunnel junction film. Thus, by adequately optimizing the amount of the re-adhesive substance, it is possible to improve yield in manufacturing the magnetoresistive heads.

    摘要翻译： 使用布置在下电极和上电极之间的铁磁隧道结（MTJ）膜来构造其磁阻效应的操作的磁阻头。 铁磁隧道结膜基本上是使用一组自由层，阻挡层和固定层构成的，它们依次形成并层压在下电极上。 这里，铁磁隧道结膜被设计成通过规定的措施避免制造中的静电破坏。 例如，与中心部分相比，阻挡层在端子部分的厚度减小。 或者，阻挡层在端子部分具有缺陷。 此外，可以在其端子部分附近提供与阻挡层相关的导体。 此外，可以将通过研磨制造的用于图案化铁磁性隧道结膜的再粘合物质附着到与ABS平面相反的铁磁性隧道结膜的特定末端表面。 这些措施提供了允许在自由层和固定层之间过电流释放的旁路。 此外，调整研磨或等离子体氧化被用于控制附着到铁磁性隧道结膜的终端表面上的再粘合物质的量。 因此，通过充分优化再粘合物质的量，可以提高制造磁阻磁头的成品率。

    Magneto-resistive element and production method thereof, magneto-resistive head, and magnetic recording/reproducing apparatus
    12.
    发明授权
    Magneto-resistive element and production method thereof, magneto-resistive head, and magnetic recording/reproducing apparatus 失效
    磁阻元件及其制造方法，磁阻头和磁记录/重放装置

    公开(公告)号：US06452762B1

    公开(公告)日：2002-09-17

    申请号：US09535742

    申请日：2000-03-27

    申请人： Kazuhiko Hayashi ,  Masafumi Nakada

    发明人： Kazuhiko Hayashi ,  Masafumi Nakada

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B2005/3996

    摘要： The present invention provides a magneto-resistive (MR) element comprising: a first magnetic layer 1 provided on a substrate; a non-magnetic layer 3 arranged to be in contact with the first magnetic layer; and a second magnetic layer 2 arranged to be in contact with the non-magnetic layer; wherein sense current flowing in the first and the second magnetic layer is changed by a resistance change according to an external magnetic field, and a sense current flowing distance in the first magnetic layer and/or a sense current flowing distance in the second magnetic layer is longer than a sense current flowing distance in a superimposed portion of the first magnetic layer, the non-magnetic layer, and the second magnetic layer.

    摘要翻译： 本发明提供了一种磁阻（MR）元件，包括：设置在基板上的第一磁性层1; 布置成与第一磁性层接触的非磁性层3; 以及布置成与非磁性层接触的第二磁性层2; 其中在第一和第二磁性层中流动的感测电流根据外部磁场的电阻变化而改变，并且第二磁性层中的第一磁性层中的感测电流流动距离和/或感测电流流动距离为 比在第一磁性层，非磁性层和第二磁性层的叠加部分中的感测电流流动距离长。

    Magneto-resistance effect type composite head and production method thereof
    13.
    发明授权
    Magneto-resistance effect type composite head and production method thereof 有权
    磁阻效应型复合头及其制造方法

    公开(公告)号：US06333842B1

    公开(公告)日：2001-12-25

    申请号：US09204222

    申请日：1998-12-03

    申请人： Ishiwata Nobuyuki ,  Hisanao Tsuge ,  Hisao Matsutera ,  Yuji Tsukamoto ,  Masafumi Nakada ,  Atsushi Kamijo

    发明人： Ishiwata Nobuyuki ,  Hisanao Tsuge ,  Hisao Matsutera ,  Yuji Tsukamoto ,  Masafumi Nakada ,  Atsushi Kamijo

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3109 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046

    摘要： The present invention provides a magneto-resistance effect (hereinafter, referred to as MR) type composite head. The head includes a reproduction head including an MR element arranged between a first and a second magnetic shield; and a recording head arranged next to the reproduction head so as to use the second magnetic shield as a first magnetic pole film and having a second magnetic pole film opposing to the first magnetic pole via a magnetic gap; the MR element including: a center region including a ferromagnetic tunnel junction magneto-resistance effect film (hereinafter, referred to as a TMR film) having: a first ferromagnetic layer and a second ferromagnetic layer for generating a magneto-resistance effect using the first and the second magnetic shields as electrodes so that a current flows in a an almost vertical direction between the first and the second magnetic shields; and a tunnel barrier layer provided between the first and the second ferromagnetic layer; and an end region arranged to sandwich the center region from both sides for applying a bias magnetic field to the center region.

    摘要翻译： 本发明提供磁阻效应（以下称为MR）型复合头。 头部包括：再现头，包括布置在第一和第二磁屏蔽之间的MR元件; 以及记录头，其布置在再现头旁边，以便使用第二磁屏蔽作为第一磁极膜，并具有通过磁隙与第一磁极相对的第二磁极膜; MR元件包括：包括铁磁隧道结磁阻效应膜（以下称为TMR膜）的中心区域，其具有：第一铁磁层和第二铁磁层，用于产生使用第一和/ 第二磁屏蔽作为电极，使得电流在第一和第二磁屏蔽之间沿几乎垂直的方向流动; 以及设置在所述第一和第二铁磁层之间的隧道势垒层; 以及端部区域，布置成从两侧夹着中心区域，以向中心区域施加偏置磁场。

    Optical modulator and method of manufacturing same
    16.
    发明授权
    Optical modulator and method of manufacturing same 有权
    光调制器及其制造方法

    公开(公告)号：US07272270B2

    公开(公告)日：2007-09-18

    申请号：US11496817

    申请日：2006-08-01

    申请人： Masafumi Nakada ,  Keishi Ohashi

    发明人： Masafumi Nakada ,  Keishi Ohashi

    IPC分类号： G02F1/035 ,  H01S3/00 ,  H04J14/02

    CPC分类号： G02F1/195 ,  G02B6/42 ,  G02B6/4214 ,  G02B6/43 ,  G02F1/03 ,  G02F2203/023 ,  H01S5/0071 ,  H01S5/0085 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/183

    摘要： Laser light emitted from a vertically confined surface emitting laser (VCSEL) is incident on a side surface near an end region of an optical waveguide. The end region of the optical waveguide is processed by polishing to taper at an angle of 45 degrees, and an optical modulator is formed on the polished surface. The optical modulator is a Fabry-Perot modulator using a linear electro-optical effect. The modulator has a thick transparent electro-optical layer which is deposited by using an aerosol deposition method.

    摘要翻译： 从垂直限制的表面发射激光器（VCSEL）发射的激光入射在光波导的端部区域附近的侧表面。 通过研磨处理光波导的端部区域以45度的角度逐渐变细，在研磨面上形成光调制器。 光调制器是使用线性电光效应的法布里 - 珀罗调制器。 调制器具有通过使用气溶胶沉积方法沉积的厚透明电光层。

    Microstructure and manufacturing process thereof
    19.
    发明申请
    Microstructure and manufacturing process thereof 审中-公开
    微结构及其制造工艺

    公开(公告)号：US20060027290A1

    公开(公告)日：2006-02-09

    申请号：US11194695

    申请日：2005-08-02

    申请人： Noriyuki Iguchi ,  Masafumi Nakada ,  Kazuhiro Iida

    发明人： Noriyuki Iguchi ,  Masafumi Nakada ,  Kazuhiro Iida

    IPC分类号： C23C8/04

    CPC分类号： G02B5/1847 ,  G02B5/1809 ,  G02B5/3058

    摘要： It is an object of the present invention to attain a microstructure having a miniature continuous structure which has high throughput and has been processed with high accuracy. To achieve this, provided is a microstructure having a column-shaped structure and a slit-forming portion which extends in a side-face direction from a side face of the column-shaped structure, wherein the slit-forming portion has a plurality of slits aligned in parallel at an interval from 20 to 1,000 nm in a direction along a center axis of the column-shaped structure.

    摘要翻译： 本发明的一个目的是获得具有高生产率和高精度加工的微型连续结构的微结构。 为了实现这一点，提供了一种具有柱状结构的微结构和从柱状结构的侧面沿侧面方向延伸的狭缝形成部分，其中狭缝形成部分具有多个狭缝 在沿着柱状结构的中心轴的方向上以20〜1000nm的间隔平行排列。