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    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    11.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US20120032246A1

    公开(公告)日：2012-02-09

    申请号：US13196084

    申请日：2011-08-02

    申请人： Masashi HONDA ,  Hitoshi Ito ,  Hideyuki Kinoshita

    发明人： Masashi HONDA ,  Hitoshi Ito ,  Hideyuki Kinoshita

    IPC分类号： H01L29/788 ,  H01L21/336

    CPC分类号： H01L29/7881 ,  H01L27/11526 ,  H01L27/11529 ,  H01L29/40114

    摘要： A nonvolatile semiconductor memory device according to an embodiment includes a semiconductor substrate, a memory cell transistor formed in a memory cell region, and a field-effect transistor formed in a peripheral circuit region. The memory cell transistor includes: a floating gate electrode; a first inter-electrode insulating film; and a control gate electrode. The field-effect transistor includes: a lower gate electrode; a second inter-electrode insulating film having an opening; and an upper gate electrode electrically connected to the lower gate electrode via the opening. The control gate electrode and the upper gate electrode are formed by a plurality of conductive films that are stacked. The control gate electrode and the upper gate electrode include a barrier film formed in one of interfaces between the stacked conductive films and configured to suppress diffusion of metal atoms. The control gate electrode and the upper gate electrode have a part that is silicided.

    摘要翻译： 根据实施例的非易失性半导体存储器件包括形成在存储单元区域中的半导体衬底，存储单元晶体管和形成在外围电路区域中的场效应晶体管。 存储单元晶体管包括：浮栅电极; 第一电极间绝缘膜; 和控制栅电极。 场效应晶体管包括：下栅电极; 具有开口的第二电极间绝缘膜; 以及通过所述开口电连接到所述下栅电极的上栅电极。 控制栅极电极和上部栅极电极由堆叠的多个导电膜形成。 控制栅电极和上栅电极包括形成在层叠导电膜之间的界面之一中的阻挡膜，并且被构造成抑制金属原子的扩散。 控制栅极电极和上部栅电极具有被硅化的部分。

    Semiconductor device having elevated source/drain on source region and drain region
    12.
    发明授权
    Semiconductor device having elevated source/drain on source region and drain region 失效
    在源极区和漏极区具有升高的源极/漏极的半导体器件

    公开(公告)号：US07190035B2

    公开(公告)日：2007-03-13

    申请号：US10802758

    申请日：2004-03-18

    申请人： Hitoshi Ito

    发明人： Hitoshi Ito

    IPC分类号： H01L29/76 ,  H01L29/94

    CPC分类号： H01L29/66628 ,  H01L21/76224 ,  H01L21/823481

    摘要： A semiconductor device disclosed herein comprises: an element isolation insulator which is formed on the surface side of a semiconductor substrate to provide electrical insulation from other elements, a height of a surface of the element isolation insulator being equal to or lower than that of a surface of the semiconductor substrate; a stopper which is formed of a material different from that of the element isolation insulator and which is at a predetermined distance from the semiconductor substrate so as to protrude from the surface of the element isolation insulator; and an elevated source/drain which is formed on a source region and a drain region so as to be elevated from the surface of the semiconductor substrate.

    摘要翻译： 本文公开的半导体器件包括：元件隔离绝缘体，其形成在半导体衬底的表面侧以提供与其它元件的电绝缘，元件隔离绝缘体的表面的高度等于或低于表面的高度 的半导体衬底; 阻挡件，其由与所述元件隔离绝缘体的材料不同的材料形成，并且距所述半导体基板预定距离，以从所述元件隔离绝缘体的表面突出; 以及形成在源极区域和漏极区域上以从半导体衬底的表面升高的源极/漏极的升高。

    Semiconductor device and method for manufacturing the same
    13.
    发明申请
    Semiconductor device and method for manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US20050127468A1

    公开(公告)日：2005-06-16

    申请号：US10802758

    申请日：2004-03-18

    申请人： Hitoshi Ito

    发明人： Hitoshi Ito

    IPC分类号： H01L21/76 ,  H01L21/336 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/08 ,  H01L27/088 ,  H01L29/78 ,  H01L29/00 ,  H01L21/8238

    CPC分类号： H01L29/66628 ,  H01L21/76224 ,  H01L21/823481

    摘要： A semiconductor device disclosed herein comprises: an element isolation insulator which is formed on the surface side of a semiconductor substrate to provide electrical insulation from other elements, a height of a surface of the element isolation insulator being equal to or lower than that of a surface of the semiconductor substrate; a stopper which is formed of a material different from that of the element isolation insulator and which is at a predetermined distance from the semiconductor substrate so as to protrude from the surface of the element isolation insulator; and an elevated source/drain which is formed on a source region and a drain region so as to be elevated from the surface of the semiconductor substrate.

    摘要翻译： 本文公开的半导体器件包括：元件隔离绝缘体，其形成在半导体衬底的表面侧以提供与其它元件的电绝缘，元件隔离绝缘体的表面的高度等于或低于表面的高度 的半导体衬底; 阻挡件，其由与所述元件隔离绝缘体的材料不同的材料形成，并且距所述半导体基板预定距离，以从所述元件隔离绝缘体的表面突出; 以及形成在源极区域和漏极区域上以从半导体衬底的表面升高的源极/漏极的升高。

    Object sensing apparatus having filter member
    15.
    发明授权
    Object sensing apparatus having filter member 失效
    具有过滤构件的物体感测装置

    公开(公告)号：US6100983A

    公开(公告)日：2000-08-08

    申请号：US116320

    申请日：1998-07-15

    申请人： Hajime Oda ,  Hitoshi Ito

    发明人： Hajime Oda ,  Hitoshi Ito

    IPC分类号： G01B11/00 ,  G01C3/06 ,  G01J1/04 ,  G01S7/481 ,  G01S17/46 ,  G01V8/14 ,  G01B11/14 ,  G01C3/08

    CPC分类号： G01S17/48 ,  G01S7/481

    摘要： An object sensing apparatus comprises a distance measuring device for measuring a distance to an object to be sensed, and a filter member having a surface disposed in confronting and spaced-apart relation to the distance measuring device. The distance measuring device has a light projecting element for projecting light toward the object and a light receiving element for receiving the light projected by the light projecting element and reflected by the object. The filter member is disposed at a preselected angle of inclination with respect to the distance measuring device. When the light projecting element projects light toward the object, light reflected or scattered by the surface of the filter member is directed in a direction away from the light receiving element.

    摘要翻译： 一种物体检测装置，包括用于测量到待检测物体的距离的距离测量装置，以及具有与距离测量装置相对并间隔开的表面的过滤构件。 该距离测量装置具有用于向物体投射光的投光元件和用于接收由该投光元件投影并被物体反射的光的光接收元件。 过滤构件相对于距离测量装置设置为预选的倾斜角。 当投光元件向物体射出光时，由过滤元件的表面反射或散射的光被指向远离光接收元件的方向。