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21 条记录 (耗时 0.019 秒)

    Acoustic wave device face-down mounted on a substrate
    12.
    发明授权
    Acoustic wave device face-down mounted on a substrate 失效
    声波装置面朝下安装在基板上

    公开(公告)号：US06417026B2

    公开(公告)日：2002-07-09

    申请号：US09754327

    申请日：2001-01-05

    申请人： Masashi Gotoh ,  Jitsuo Kanazawa ,  Hajime Kuwajima

    发明人： Masashi Gotoh ,  Jitsuo Kanazawa ,  Hajime Kuwajima

    IPC分类号： H01L2148

    CPC分类号： H03H9/1085 ,  H01L23/3135 ,  H01L2224/16 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/19041 ,  H03H9/059 ,  H03H9/1092

    摘要： In a chip device in which not only an electrode pattern 25 is provided on a main mounting surface 21a of a base 21 but also bump electrodes 22 are provided as external electrodes for face-down mounting, an electrically insulating layer 31 is provided to be put on at least a part of the main mounting surface 21a so as to remain edge portions which do not cover at least a part of the electrode pattern 25, and a protection layer 32 for protecting the main mounting surface is further provided at a distance from the main mounting surface 21a so as to be put on the electrically insulating layer 31, so that the bump electrodes 22 are connected to the electrode pattern 25 while being in contact with the edge portions of the electrically insulating layer 31 and the protection layer 32.

    摘要翻译： 在其中不仅在基座21的主安装表面21a上设置电极图案25，而且还设置凸起电极22作为面向下安装的外部电极的芯片装置中，提供电绝缘层31以放置 在主安装表面21a的至少一部分上，以便保留不覆盖电极图案25的至少一部分的边缘部分，并且还保护主安装表面的保护层32距离 主安装表面21a，以便放置在电绝缘层31上，使得凸起电极22在与电绝缘层31和保护层32的边缘部分接触的同时与电极图案25连接。

    Encapsulated surface mounting electronic part
    14.
    发明授权
    Encapsulated surface mounting electronic part 失效
    封装表面安装电子部件

    公开(公告)号：US06281436B1

    公开(公告)日：2001-08-28

    申请号：US09499299

    申请日：2000-02-07

    申请人： Masashi Gotoh ,  Jitsuo Kanazawa ,  Shuichiro Yamamoto

    发明人： Masashi Gotoh ,  Jitsuo Kanazawa ,  Shuichiro Yamamoto

    IPC分类号： H05K506

    CPC分类号： H05K3/403 ,  H01L23/10 ,  H01L23/49805 ,  H01L23/49827 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/16195 ,  H01L2924/3025 ,  H03H9/1071 ,  H05K3/0052 ,  H05K3/244 ,  H05K3/284 ,  H05K3/3442 ,  H05K3/42 ,  H05K2201/09181 ,  H05K2201/10727 ,  H05K2203/0723 ,  H01L2224/0401

    摘要： An electronic element is mounted on a resin wiring substrate and a cover member is bonded to the wiring substrate so as to cover the electronic element and constitute an encapsulation region. The encapsulation region houses the electronic element and has a cavity inside. A side electrode is formed of an electronically conductive through groove provided in a cover-member-bonding surface on the wiring substrate. A plating layer inside the electrically conductive through groove includes at least two metal layers including an Au plating layer and a Cu plating layer. The plating layer has conductors connected to circumferential peripheries of the electrically conductive through groove on upper and lower surfaces of the wiring substrate. Only the Cu plating layer is formed on the conductor on the upper surface of the wiring substrate to improve the reliability of bonding. The reliability of bonding of the resin wiring substrate and cover member which constitute the encapsulation region is improved, and therefore the reliability of the air-tight seal of the cavity inside the encapsulation region is improved.

    摘要翻译： 电子元件安装在树脂布线基板上，并且盖构件被接合到布线基板以覆盖电子元件并构成封装区域。 封装区域容纳电子元件并且在其内部具有空腔。 侧面电极由配置在配线基板的盖部件接合面上的电子导电贯通槽形成。 导电通槽内的镀层包括至少两个包括Au镀层和Cu镀层的金属层。 电镀层具有连接到布线基板的上表面和下表面上的导电通孔的周向周边的导体。 在布线基板的上表面的导体上仅形成Cu镀层，以提高接合的可靠性。 提高了构成封装区域的树脂布线基板和盖部件的接合的可靠性，因此提高了封装区域内的空腔密封性的可靠性。

    Light emitting device
    15.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US07355251B2

    公开(公告)日：2008-04-08

    申请号：US11542197

    申请日：2006-10-04

    申请人： Jitsuo Kanazawa ,  Yo Saito

    发明人： Jitsuo Kanazawa ,  Yo Saito

    IPC分类号： H01L23/62 ,  H01L27/15

    CPC分类号： H01L25/167 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00

    摘要： An object is to provide a light emitting device capable of efficiently dissipating heat generated in a semiconductor light-emitting element. The light emitting device 1 for achieving this object is a device wherein a multilayer chip varistor 10 has a varistor element 11 having a varistor layer comprised essentially of ZnO, and a plurality of internal electrodes 101, 102 arranged to sandwich the varistor layer between the internal electrodes; and a plurality of external electrodes 103, 104 formed on an outer surface of the varistor element 11 and each connected to a corresponding internal electrode 101, 102; wherein a semiconductor light-emitting element 20 has an electroconductive substrate 202 of ZnO, and semiconductor layers 201, 203, 205 of ZnO formed by epitaxial growth on two surfaces of the electroconductive substrate 202; wherein the semiconductor light-emitting element 20 is placed on a principal surface 11a intersecting with the internal electrodes 101, 102 of the multilayer chip varistor 10; wherein the semiconductor layer 205 is fixed in face contact to the principal surface 11a.

    摘要翻译： 本发明的目的是提供能够有效地散发半导体发光元件中产生的热的发光器件。 用于实现该目的的发光器件1是其中多层片式压敏电阻器10具有具有基本上由ZnO构成的可变电阻层的变阻器元件11和多个内部电极101,102，其被设置为将可变电阻层夹在内部 电极 以及形成在可变电阻元件11的外表面上并且各自连接到相应的内部电极101,102的多个外部电极103,104; 其中半导体发光元件20具有ZnO的导电基底202和通过外延生长在导电基底202的两个表面上形成的ZnO的半导体层201,203,205; 其中半导体发光元件20放置在与多层片式压敏电阻10的内部电极101,102相交叉的主表面11a上; 其中半导体层205与主表面11a面接触地固定。

    Light emitting apparatus
    16.
    发明授权
    Light emitting apparatus 有权
    发光装置

    公开(公告)号：US07671468B2

    公开(公告)日：2010-03-02

    申请号：US11515195

    申请日：2006-09-05

    申请人： Jitsuo Kanazawa ,  Yo Saito ,  Kimio Suto

    发明人： Jitsuo Kanazawa ,  Yo Saito ,  Kimio Suto

    IPC分类号： H01L27/15

    CPC分类号： H01L25/167 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

    摘要： A light emitting apparatus is comprised of a multilayer chip varistor having a varistor element body, a semiconductor light emitting element, and a reflecting portion. The varistor element body includes a varistor layer, and a plurality of internal electrodes opposed to each other so as to interpose the varistor layer between the internal electrodes. The semiconductor light emitting element is disposed on the multilayer chip varistor and is electrically connected to the plurality of internal electrodes so as to be connected in parallel to the multilayer chip varistor. The reflecting portion is disposed between the multilayer chip varistor and the semiconductor light emitting element. The reflecting portion reflects light traveling toward the multilayer chip varistor out of light generated by the semiconductor light emitting element.

    摘要翻译： 发光装置由具有变阻器元件主体，半导体发光元件和反射部分的多层片式压敏电阻构成。 可变电阻元件体包括可变阻抗层和多个彼此相对的内部电极，以将可变电阻层插入在内部电极之间。 半导体发光元件设置在多层片式压敏电阻上，与多个内部电极电连接，以与多层片式压敏电阻并联连接。 反射部分设置在多层芯片变阻器和半导体发光元件之间。 反射部反射从半导体发光元件产生的光向多层片状变阻器行进的光。

    Light emitting device
    18.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US07505239B2

    公开(公告)日：2009-03-17

    申请号：US11402869

    申请日：2006-04-13

    申请人： Jitsuo Kanazawa ,  Nobuei Shimojo ,  Dai Matsuoka ,  Kimio Suto ,  Makoto Numata ,  Yo Saito

    发明人： Jitsuo Kanazawa ,  Nobuei Shimojo ,  Dai Matsuoka ,  Kimio Suto ,  Makoto Numata ,  Yo Saito

    IPC分类号： H02H9/00

    CPC分类号： H01C7/18 ,  H01C1/148 ,  H01C7/1006 ,  H01C13/00 ,  H01L25/167 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/14 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

    摘要： A light emitting device has a semiconductor light emitting element and a multilayer chip varistor. The multilayer chip varistor has a multilayer body with a varistor portion therein, and a plurality of external electrodes disposed on an outer surface of the multilayer body. The varistor portion has a varistor layer containing ZnO as a principal component and exhibiting nonlinear voltage-current characteristics, and a plurality of internal electrodes arranged to interpose the varistor layer between them. Each of the external electrodes is connected to a corresponding internal electrode out of the plurality of internal electrodes. The semiconductor light emitting element is disposed on the multilayer chip varistor. The semiconductor light emitting element is connected to corresponding external electrodes out of the plurality of external electrodes so as to be connected in parallel to the varistor portion.

    摘要翻译： 发光器件具有半导体发光元件和多层片式变阻器。 多层片式压敏电阻具有其中具有变阻器部分的多层体，以及设置在多层体的外表面上的多个外部电极。 变阻器部分具有包含ZnO作为主要成分并具有非线性电压 - 电流特性的变阻器层，以及布置成在它们之间插入可变电阻层的多个内部电极。 每个外部电极连接到多个内部电极中的对应的内部电极。 半导体发光元件设置在多层片式压敏电阻上。 半导体发光元件与多个外部电极中的相应的外部电极连接，以便与压敏电阻部分并联连接。

    Light emitting device
    19.
    发明申请
    Light emitting device 有权
    发光装置

    公开(公告)号：US20070081288A1

    公开(公告)日：2007-04-12

    申请号：US11542197

    申请日：2006-10-04

    申请人： Jitsuo Kanazawa ,  Yo Saito

    发明人： Jitsuo Kanazawa ,  Yo Saito

    IPC分类号： H02H9/06

    CPC分类号： H01L25/167 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00

    摘要： An object is to provide a light emitting device capable of efficiently dissipating heat generated in a semiconductor light-emitting element. The light emitting device 1 for achieving this object is a device wherein a multilayer chip varistor 10 has a varistor element 11 having a varistor layer comprised essentially of ZnO, and a plurality of internal electrodes 101, 102 arranged to sandwich the varistor layer between the internal electrodes; and a plurality of external electrodes 103, 104 formed on an outer surface of the varistor element 11 and each connected to a corresponding internal electrode 101, 102; wherein a semiconductor light-emitting element 20 has an electroconductive substrate 202 of ZnO, and semiconductor layers 201, 203, 205 of ZnO formed by epitaxial growth on two surfaces of the electroconductive substrate 202; wherein the semiconductor light-emitting element 20 is placed on a principal surface 11a intersecting with the internal electrodes 101, 102 of the multilayer chip varistor 10; wherein the semiconductor layer 205 is fixed in face contact to the principal surface 11a.

    摘要翻译： 本发明的目的是提供能够有效地散发半导体发光元件中产生的热的发光器件。 用于实现该目的的发光器件1是其中多层片式压敏电阻器10具有具有基本上由ZnO构成的变阻器层的变阻器元件11和多个内部电极101,102，其被设置为将可变电阻层夹在内部 电极 以及形成在可变电阻元件11的外表面上并且各自连接到相应的内部电极101,102的多个外部电极103,104; 其中半导体发光元件20具有ZnO的导电基底202和通过外延生长在导电基底202的两个表面上形成的ZnO的半导体层201,203,205; 其中半导体发光元件20放置在与多层片式压敏电阻10的内部电极101,102相交叉的主表面11a上; 其中半导体层205与主表面11a面接触地固定。

    Light emitting apparatus
    20.
    发明申请
    Light emitting apparatus 有权
    发光装置

    公开(公告)号：US20070075323A1

    公开(公告)日：2007-04-05

    申请号：US11515195

    申请日：2006-09-05

    申请人： Jitsuo Kanazawa ,  Yo Saito ,  Kimio Suto

    发明人： Jitsuo Kanazawa ,  Yo Saito ,  Kimio Suto

    IPC分类号： H01L33/00 ,  H01L31/12

    CPC分类号： H01L25/167 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

    摘要： A light emitting apparatus is comprised of a multilayer chip varistor having a varistor element body, a semiconductor light emitting element, and a reflecting portion. The varistor element body includes a varistor layer, and a plurality of internal electrodes opposed to each other so as to interpose the varistor layer between the internal electrodes. The semiconductor light emitting element is disposed on the multilayer chip varistor and is electrically connected to the plurality of internal electrodes so as to be connected in parallel to the multilayer chip varistor. The reflecting portion is disposed between the multilayer chip varistor and the semiconductor light emitting element. The reflecting portion reflects light traveling toward the multilayer chip varistor out of light generated by the semiconductor light emitting element.

    摘要翻译： 发光装置由具有变阻器元件主体，半导体发光元件和反射部分的多层片式压敏电阻构成。 可变电阻元件体包括可变阻抗层和多个彼此相对的内部电极，以将可变电阻层插入在内部电极之间。 半导体发光元件设置在多层片式压敏电阻上，与多个内部电极电连接，以与多层片式压敏电阻并联连接。 反射部分设置在多层芯片变阻器和半导体发光元件之间。 反射部反射从半导体发光元件产生的光向多层片状变阻器行进的光。