Light emitting device
    1.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号:US07355251B2

    公开(公告)日:2008-04-08

    申请号:US11542197

    申请日:2006-10-04

    IPC分类号: H01L23/62 H01L27/15

    摘要: An object is to provide a light emitting device capable of efficiently dissipating heat generated in a semiconductor light-emitting element. The light emitting device 1 for achieving this object is a device wherein a multilayer chip varistor 10 has a varistor element 11 having a varistor layer comprised essentially of ZnO, and a plurality of internal electrodes 101, 102 arranged to sandwich the varistor layer between the internal electrodes; and a plurality of external electrodes 103, 104 formed on an outer surface of the varistor element 11 and each connected to a corresponding internal electrode 101, 102; wherein a semiconductor light-emitting element 20 has an electroconductive substrate 202 of ZnO, and semiconductor layers 201, 203, 205 of ZnO formed by epitaxial growth on two surfaces of the electroconductive substrate 202; wherein the semiconductor light-emitting element 20 is placed on a principal surface 11a intersecting with the internal electrodes 101, 102 of the multilayer chip varistor 10; wherein the semiconductor layer 205 is fixed in face contact to the principal surface 11a.

    摘要翻译: 本发明的目的是提供能够有效地散发半导体发光元件中产生的热的发光器件。 用于实现该目的的发光器件1是其中多层片式压敏电阻器10具有具有基本上由ZnO构成的可变电阻层的变阻器元件11和多个内部电极101,102,其被设置为将可变电阻层夹在内部 电极 以及形成在可变电阻元件11的外表面上并且各自连接到相应的内部电极101,102的多个外部电极103,104; 其中半导体发光元件20具有ZnO的导电基底202和通过外延生长在导电基底202的两个表面上形成的ZnO的半导体层201,203,205; 其中半导体发光元件20放置在与多层片式压敏电阻10的内部电极101,102相交叉的主表面11a上; 其中半导体层205与主表面11a面接触地固定。

    Light emitting apparatus
    2.
    发明授权
    Light emitting apparatus 有权
    发光装置

    公开(公告)号:US07671468B2

    公开(公告)日:2010-03-02

    申请号:US11515195

    申请日:2006-09-05

    IPC分类号: H01L27/15

    摘要: A light emitting apparatus is comprised of a multilayer chip varistor having a varistor element body, a semiconductor light emitting element, and a reflecting portion. The varistor element body includes a varistor layer, and a plurality of internal electrodes opposed to each other so as to interpose the varistor layer between the internal electrodes. The semiconductor light emitting element is disposed on the multilayer chip varistor and is electrically connected to the plurality of internal electrodes so as to be connected in parallel to the multilayer chip varistor. The reflecting portion is disposed between the multilayer chip varistor and the semiconductor light emitting element. The reflecting portion reflects light traveling toward the multilayer chip varistor out of light generated by the semiconductor light emitting element.

    摘要翻译: 发光装置由具有变阻器元件主体,半导体发光元件和反射部分的多层片式压敏电阻构成。 可变电阻元件体包括可变阻抗层和多个彼此相对的内部电极,以将可变电阻层插入在内部电极之间。 半导体发光元件设置在多层片式压敏电阻上,与多个内部电极电连接,以与多层片式压敏电阻并联连接。 反射部分设置在多层芯片变阻器和半导体发光元件之间。 反射部反射从半导体发光元件产生的光向多层片状变阻器行进的光。

    Light emitting device
    4.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号:US07505239B2

    公开(公告)日:2009-03-17

    申请号:US11402869

    申请日:2006-04-13

    IPC分类号: H02H9/00

    摘要: A light emitting device has a semiconductor light emitting element and a multilayer chip varistor. The multilayer chip varistor has a multilayer body with a varistor portion therein, and a plurality of external electrodes disposed on an outer surface of the multilayer body. The varistor portion has a varistor layer containing ZnO as a principal component and exhibiting nonlinear voltage-current characteristics, and a plurality of internal electrodes arranged to interpose the varistor layer between them. Each of the external electrodes is connected to a corresponding internal electrode out of the plurality of internal electrodes. The semiconductor light emitting element is disposed on the multilayer chip varistor. The semiconductor light emitting element is connected to corresponding external electrodes out of the plurality of external electrodes so as to be connected in parallel to the varistor portion.

    摘要翻译: 发光器件具有半导体发光元件和多层片式变阻器。 多层片式压敏电阻具有其中具有变阻器部分的多层体,以及设置在多层体的外表面上的多个外部电极。 变阻器部分具有包含ZnO作为主要成分并具有非线性电压 - 电流特性的变阻器层,以及布置成在它们之间插入可变电阻层的多个内部电极。 每个外部电极连接到多个内部电极中的对应的内部电极。 半导体发光元件设置在多层片式压敏电阻上。 半导体发光元件与多个外部电极中的相应的外部电极连接,以便与压敏电阻部分并联连接。

    Light emitting device
    5.
    发明申请
    Light emitting device 有权
    发光装置

    公开(公告)号:US20070081288A1

    公开(公告)日:2007-04-12

    申请号:US11542197

    申请日:2006-10-04

    IPC分类号: H02H9/06

    摘要: An object is to provide a light emitting device capable of efficiently dissipating heat generated in a semiconductor light-emitting element. The light emitting device 1 for achieving this object is a device wherein a multilayer chip varistor 10 has a varistor element 11 having a varistor layer comprised essentially of ZnO, and a plurality of internal electrodes 101, 102 arranged to sandwich the varistor layer between the internal electrodes; and a plurality of external electrodes 103, 104 formed on an outer surface of the varistor element 11 and each connected to a corresponding internal electrode 101, 102; wherein a semiconductor light-emitting element 20 has an electroconductive substrate 202 of ZnO, and semiconductor layers 201, 203, 205 of ZnO formed by epitaxial growth on two surfaces of the electroconductive substrate 202; wherein the semiconductor light-emitting element 20 is placed on a principal surface 11a intersecting with the internal electrodes 101, 102 of the multilayer chip varistor 10; wherein the semiconductor layer 205 is fixed in face contact to the principal surface 11a.

    摘要翻译: 本发明的目的是提供能够有效地散发半导体发光元件中产生的热的发光器件。 用于实现该目的的发光器件1是其中多层片式压敏电阻器10具有具有基本上由ZnO构成的变阻器层的变阻器元件11和多个内部电极101,102,其被设置为将可变电阻层夹在内部 电极 以及形成在可变电阻元件11的外表面上并且各自连接到相应的内部电极101,102的多个外部电极103,104; 其中半导体发光元件20具有ZnO的导电基底202和通过外延生长在导电基底202的两个表面上形成的ZnO的半导体层201,203,205; 其中半导体发光元件20放置在与多层片式压敏电阻10的内部电极101,102相交叉的主表面11a上; 其中半导体层205与主表面11a面接触地固定。

    Light emitting apparatus
    6.
    发明申请
    Light emitting apparatus 有权
    发光装置

    公开(公告)号:US20070075323A1

    公开(公告)日:2007-04-05

    申请号:US11515195

    申请日:2006-09-05

    IPC分类号: H01L33/00 H01L31/12

    摘要: A light emitting apparatus is comprised of a multilayer chip varistor having a varistor element body, a semiconductor light emitting element, and a reflecting portion. The varistor element body includes a varistor layer, and a plurality of internal electrodes opposed to each other so as to interpose the varistor layer between the internal electrodes. The semiconductor light emitting element is disposed on the multilayer chip varistor and is electrically connected to the plurality of internal electrodes so as to be connected in parallel to the multilayer chip varistor. The reflecting portion is disposed between the multilayer chip varistor and the semiconductor light emitting element. The reflecting portion reflects light traveling toward the multilayer chip varistor out of light generated by the semiconductor light emitting element.

    摘要翻译: 发光装置由具有变阻器元件主体,半导体发光元件和反射部分的多层片式压敏电阻构成。 可变电阻元件体包括可变阻抗层和多个彼此相对的内部电极,以将可变电阻层插入在内部电极之间。 半导体发光元件设置在多层片式压敏电阻上,与多个内部电极电连接,以与多层片式压敏电阻并联连接。 反射部分设置在多层芯片变阻器和半导体发光元件之间。 反射部反射从半导体发光元件产生的光向多层片状变阻器行进的光。

    Method of manufacturing a substrate having electrode arcs for connecting to surface-mounted electronic parts and substrate manufactured by same
    7.
    发明授权
    Method of manufacturing a substrate having electrode arcs for connecting to surface-mounted electronic parts and substrate manufactured by same 失效
    制造具有用于连接到由表面安装的电子部件和由其制造的基板的电极弧的基板的方法

    公开(公告)号:US06263565B1

    公开(公告)日:2001-07-24

    申请号:US09103392

    申请日:1998-06-24

    IPC分类号: H01K310

    摘要: A through hole 5 formed in a substrate and having an electrode film on an inner surface thereof is cut and divided into two through holes or blind holes each of substantially semicircular arc shape through dicing processing using a rotating blade, and one of the-divided through holes 5 of substantially semicircular arc shape is used as an external connection terminal 3 of substantially semicircular concave arc shape thereby to form a surface mounted electronic parts having a plurality of the external connection terminals 3. The height H of the substantially semicircular arc formed at an inner surface of each of the external connection terminals is set to be equal to or smaller than a value obtained by subtracting twice a thickness t of the electrode film from a radius R of a curvature of the arc.

    摘要翻译: 形成在基板中并且在其内表面上具有电极膜的通孔5通过使用旋转叶片的切割处理被分割成基本上半圆弧形的两个通孔或盲孔,并且其中一个分割通孔 使用大致半圆弧形的孔5作为大致半圆形的凹弧形状的外部连接端子3,从而形成具有多个外部连接端子3的表面安装的电子部件。大致半圆弧的高度H形成在 每个外部连接端子的内表面被设定为等于或小于从电弧曲率的半径R减去电极膜的厚度t的两倍所获得的值。

    Wiring board and process for the production thereof
    10.
    发明授权
    Wiring board and process for the production thereof 失效
    接线板及其生产工艺

    公开(公告)号:US06204454B1

    公开(公告)日:2001-03-20

    申请号:US09221124

    申请日:1998-12-28

    IPC分类号: H05K322

    摘要: A wiring board having a conductor layer formed on a substrate and a connecting pad disposed in a connecting pad disposition portion provided in part of the conductor layer surface, the conductor layer having a resin inflow prevention portion which is provided adjacently to the said connecting pad disposition portion and which has a surface roughness greater than the surface roughness of the said connecting pad disposition portion, the resin inflow prevention portion being capable of overcoming the problem of prior art that an adhesive resin (resin layer) of a prepreg or an adhesive flows out onto the upper surface of the pad, due to its softening under heat and its being pressurized for bonding when a structure member such as a cover layer is bonded to the wiring board, and forms a cured resin which extremely inhibits the bonding property of a chip element onto the pad.

    摘要翻译: 一种布线板,其具有形成在基板上的导体层和布置在设置在所述导体层表面的一部分中的连接焊盘布置部分中的连接焊盘,所述导体层具有邻近所述连接焊盘布置设置的树脂流入防止部分 并且其表面粗糙度大于所述连接垫布置部分的表面粗糙度,树脂流入防止部分能够克服现有技术的问题,即预浸料或粘合剂的粘合树脂(树脂层)流出 由于其在加热时软化,并且当诸如覆盖层的结构构件结合到布线板上时,其被加压以进行接合,并且形成极其抑制芯片的接合性能的固化树脂 元素到垫上。