摘要:
An apparatus for distilling water in which a heat receiving plate member and a plurality of cooling plate members have a means for holding water to be treated on each reverse side thereof and are arranged in parallel spaced relationship with each other, and the water vapor produced by heating the heat receiving surface of the heat receiving plate member is condensed on the condensing surface of the adjacent cooling plate member, while giving the latent heat of the condensation to the cooling plate member and heating a water held on its back to produce the water vapor which is condensed on the condensing surface of the next cooling plate member, such evaporation by the latent heat and condensation being conducted according the number of rooms partitioned by adjacent two cooling plate members. There are apparatuses of two types, i.e. thermal diffusion type and convection type, and they are availably employed for purifying impure water or desalting sea water in high heat efficiency by utilizing various heat sources such as solar heat.
摘要:
In an exhaust system, there are provided an HC absorbent which absorbs HC contained in exhaust when in a specified low-temperature range and desorbs the absorbed HC when it exceeds said low-temperature range, and a catalyst capable of at least removing HC by oxidation, where the catalyst is arranged at the same position as or downstream of the HC absorbent. When it is found that the HC absorbent is in a state ready for desorbing the absorbed HC (S16, S18) and the internal combustion engine is in a specified decelerating state (S14), fuel supply to some of the cylinders of an internal combustion engine is stopped while fuel is supplied to the other cylinders (partial fuel cut) (S22).
摘要:
In order to provide a light heat insulating member having both an extremely low thermal conductivity and a high heat resistance in an atmosphere, in which pressure is reduced, a core member consisting of accumulated heat resisting inorganic fiber is put between a high temperature side skin member and a low temperature side skin member made of heat resisting fiber textile and these three members are tied all together in one body by sewing, using heat resisting inorganic fiber thread. It is possible to reduce the thermal conductivity to an extremely small value by adding a material having a high emissivity (SiC powder, SiC whisker) to the core member and to prevent scattering of material constructing the core member by covering side wall parts of the core member by the high temperature skin member.
摘要:
A control system for a compression ignition type diesel engine includes an operating state detecting unit for detecting the operating state of the diesel engine. A combustion mode selecting unit selects, in correspondence with the output of the operating state detecting unit, a first combustion mode, wherein fuel injection is carried out in the first half of the compression stroke, or a second combustion mode, wherein fuel injection is carried out at around compression top dead center. An effective compression ratio varying unit varies the effective compression ratio of the diesel engine and a control unit controls the effective compression ratio varying unit to lower the effective compression ratio when the first combustion mode is selected by the combustion mode selecting unit compared to when the second combustion mode is selected. When the first combustion mode is selected by the combustion mode selecting unit, by fuel injection being carried out in the first half of the compression stroke and the effective compression ratio being lowered so that compression ignition occurs at around compression top dead center, a uniform highly diffuse premix combustion can be realized. When the second combustion mode is selected by the combustion mode selecting unit, by fuel injection being carried out at compression top dead center and ignition occurring at around compression top dead center substantially simultaneously with fuel injection, without the effective compression ratio being lowered, diffusion combustion is realized.
摘要:
The present invention provides a grain-oriented electrical steel sheet having magnetic properties equal to, or higher than, those of conventional steel sheets can be produced economically with high productivity, and a method for producing such a steel sheet. The producing method comprises the steps of using, as a starting material, a coil obtained by heating a slab having a composition comprising, in terms of percent by weight, 0.02 to 0.15% of C, 2.5 to 4.0% of Si, 0.02 to 0.20% of Mn, 0.015 to 0.065% of Sol. Al, 0.0030 to 0.0150% of N, 0.005 to 0.040% as the sum of at least one of S and Se and the balance substantially consisting of Fe and hot rolling the slab to a coil, or a coil directly cast from a molten steel having the same components as the slab, conducting hot rolled sheet annealing at 900 to 1,100.degree. C., one stage cold rolling the sheet by a tandem mill having a plurality of stands, conducting decarburization annealing, further conducting final finish annealing, and then applying final coating so that a product having a thickness of 0.20 to 0.55 mm, an average grain diameter size of 1.5 to 5.5 mm, a W.sub.17/50 value expressed by the formula given below and a B.sub.8 value satisfying the relation 1.80.ltoreq.B.sub.8 (T).ltoreq.1.88:0.5884e.sup.1.9154t .ltoreq.W17/50 (W/kg).ltoreq.0.7558e.sup.1.7378t [t: sheet thickness.]
摘要:
A word line activation signal generated by a timing generator is surely at L level in a prescribed period regardless of the power supply voltage. A row address signal delayed by a delay circuit in a row address buffer changes in a period in which the word line activation signal is at L level. Accordingly, even if skew occurs, a non-selected word line is never activated. Consequently, it is possible to prevent delay of access to a memory cell and erroneous writing to a memory cell.
摘要:
A process for producing L-ascorbic acid, which comprises reacting 2-keto-L-gulonic acid with an acid in an ether or an inert organic solvent containing an ether in the presence of water and a surfactant.
摘要:
A semiconductor device prevents latch up and enables subminiaturization of its structure, and a method can manufacture the semiconductor device. In the semiconductor device containing field-effect transistors of a complementary type, an interconnection containing semiconductor having n-type impurity connects a p-type impurity diffusion region forming an emitter electrode of a parasitically formed bipolar transistor to an n-type impurity diffusion region electrically connected to a power supply line. Thereby, a pn junction operating as a rectifier element is formed at a contact region between a connection portion and the p-type impurity diffusion region.
摘要:
There is provided a water-absorptive composite comprising a fibrous substrate bearing water-absorptive polymer particles. A process for producing the water-absorptive composite comprises the steps of: allowing an aqueous monomer solution containing a polymerizable monomer capable of providing a water-absorptive polymer to initiate polymerization by the use of a redox polymerization initiator; applying the resultant reaction mixture, which is in the course of polymerization, dropwise onto a fibrous substrate; and allowing the polymerization to proceed and finish on the substrate.
摘要:
Each of the portions corresponding to the crossings of a plurality of first strip conductive layers serving as bit lines and a plurality of second strip conductive layers serving as word lines crossing the conductive layers at right angles is used as one memory cell. An oxide film is provided between the first strip conductive layers and the second strip conductive layers. The thickness of this oxide film is set in each memory cell according to stored data. Also a multi-value memory can be realized, since the amount of stored data in each memory cell is an arbitrary amount of 1 bit or more by making the stored data of a plurality of types of memory cells having different thicknesses in the tunnel oxide film 15 correspond to a plurality of different data. The size of each memory cell can be reduced since the occupying area of each memory cell on the semiconductor substrate is dependent on the width of the first strip conductive layer and the second strip conductive layer. An insulation film in which tunnel phenomenon is generated can be formed using conventional manufacturing technology.