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公开(公告)号：US08907455B2
公开(公告)日：2014-12-09
申请号：US13130817
申请日：2009-01-28
CPC分类号： H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/16
摘要： A voltage-controlled switch comprises a first electrode, a second electrode, a switching junction situated between the first electrode and the second electrode, a conducting channel extending from adjacent to the origin through the switching junction and having a channel end situated near the second electrode, and a layer of dopants situated adjacent to an interface between the switching junction and the second electrode, wherein the dopants are capable of being activated to form switching centers.
摘要翻译： 电压控制开关包括第一电极，第二电极，位于第一电极和第二电极之间的开关结，导电通道从邻近原点延伸通过开关结，并且具有位于第二电极附近的通道端 以及位于开关结和第二电极之间的界面附近的掺杂剂层，其中掺杂剂能够被激活以形成开关中心。
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公开(公告)号：US08779848B2
公开(公告)日：2014-07-15
申请号：US13383981
申请日：2009-08-28
IPC分类号： G11C11/00 , G11C11/24 , H01L29/167 , H01L49/02
CPC分类号： G11C11/24 , H01G7/06 , H01L27/101 , H01L28/40 , H01L29/167 , H01L29/93
摘要： A memcapacitor device includes a memcapacitive matrix interposed between a first electrode and a second electrode. The memcapacitive matrix includes deep level dopants having a first decay time constant and shallow level dopants having a second decay time constant. The second decay time constant is substantially shorter than the first decay time constant. The capacitance of the memcapacitor device depends upon an initial voltage applied across the memcapacitive matrix and a time dependent change in capacitance of the memcapacitor device depends upon the first decay time constant. A method for forming a memcapacitive device is also provided.
摘要翻译： 电容器装置包括插入在第一电极和第二电极之间的存储电容矩阵。 电容矩阵包括具有第一衰减时间常数的深层掺杂剂和具有第二衰减时间常数的浅层掺杂剂。 第二衰减时间常数明显短于第一衰减时间常数。 存储器件器件的电容取决于施加在存储电容矩阵上的初始电压，并且存储器件器件的时间相关的电容变化取决于第一衰减时间常数。 还提供了一种用于形成电容器件的方法。
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公开(公告)号：US08324976B2
公开(公告)日：2012-12-04
申请号：US13078595
申请日：2011-04-01
申请人： Julien Borghetti , Matthew D Pickett , Gilberto Medeiros Ribeiro , Wei Yi , Jianhua Yang , Minxian Max Zhang
发明人： Julien Borghetti , Matthew D Pickett , Gilberto Medeiros Ribeiro , Wei Yi , Jianhua Yang , Minxian Max Zhang
IPC分类号： H03B7/00
CPC分类号： H03B7/00
摘要： Circuitry is provided that closely emulates biological neural responses. Two astable multivibrator circuits (AMCs), each including a negative differential resistance device, are coupled in series-circuit relationship. Each AMC is characterized by a distinct voltage-dependant time constant. The circuitry exhibits oscillations in electrical current when subjected to a voltage equal to or greater than a threshold value. Various oscillating waveforms can be produced in accordance with voltages applied to the circuitry.
摘要翻译： 提供了密切仿效生物神经反应的电路。 两个不连续的多谐振荡器电路（AMC），每个包括一个负差分电阻器件，以串联电路的关系耦合。 每个AMC的特征在于不同的电压相关时间常数。 当经受等于或大于阈值的电压时，该电路表现出电流的振荡。 可以根据施加到电路的电压来产生各种振荡波形。
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公开(公告)号：US20120127780A1
公开(公告)日：2012-05-24
申请号：US13387307
申请日：2010-02-09
IPC分类号： G11C11/00
CPC分类号： G11C11/5678 , G11C11/54 , G11C13/0007 , G11C13/0069 , G11C2013/0092
摘要： Apparatus and methods related to memory resistors are provided. A feedback controller applies adjustment signals to a memristor. A non-volatile electrical resistance of the memristor is sensed by the feedback controller during the adjustment. The memristor is adjusted to particular values lying between first and second limiting values with minimal overshoot. Increased memristor service life, faster operation, lower power consumption, and higher operational integrity are achieved by the present teachings.
摘要翻译： 提供了与存储电阻相关的装置和方法。 反馈控制器将调整信号应用于忆阻器。 在调节期间，反馈控制器感测到避震器的非易失性电阻。 忆阻器被调整到具有最小过冲的第一和第二极限值之间的特定值。 通过本发明实现了增加的忆阻器使用寿命，更快的操作，更低的功耗和更高的操作完整性。
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公开(公告)号：US08605484B2
公开(公告)日：2013-12-10
申请号：US13130822
申请日：2009-01-29
IPC分类号： G11C11/00
CPC分类号： G11C13/02 , G11C13/0007 , G11C13/0069 , G11C2013/008 , G11C2213/12 , G11C2213/32 , G11C2213/34 , G11C2213/77 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/1286 , H01L45/146 , H01L45/1641
摘要： A self-repairing memristor and methods of operating a memristor, and repairing a memristor, employ thermal annealing. The thermal annealing removes a short circuit in an oxide layer, of the memristor. Thermal annealing includes heating the memristor, to a predetermined annealing temperature for a predetermined annealing time period. The memristor, returns to an electrically open circuit condition after the short circuit is removed.
摘要翻译： 自我修复的忆阻器和操作忆阻器的方法以及修复忆阻器采用热退火。 避雷器的热退火消除了氧化层中的短路。 热退火包括将忆阻器加热至预定的退火温度达预定的退火时间。 忆阻器在短路被去除后返回到电开路状态。
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公开(公告)号：US08274813B2
公开(公告)日：2012-09-25
申请号：US12837903
申请日：2010-07-16
IPC分类号： G11C11/00
CPC分类号： H03B7/06
摘要： A memristive Negative Differential Resistance (NDR) device includes a first electrode adjacent to a memristive matrix, the memristive matrix including an intrinsic semiconducting region and a highly doped secondary region, a Metal-Insulator-Transition (MIT) material in series with the memristive matrix, and a second electrode adjacent to the MIT material.
摘要翻译： 忆阻负差分电阻（NDR）器件包括与忆阻矩阵相邻的第一电极，该忆阻矩阵包括本征半导体区域和高掺杂次级区域，金属绝缘体转变（MIT）材料与忆阻矩阵 以及与MIT材料相邻的第二电极。
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17.发明申请SWITCHABLE JUNCTION WITH AN INTRINSIC DIODE FORMED WITH A VOLTAGE DEPENDENT RESISTOR 有权具有电压依赖电阻器形成的内部二极管的可切换连接公开(公告)号：US20120063197A1
公开(公告)日：2012-03-15
申请号：US13259183
申请日：2009-09-04
CPC分类号： H01L27/1021 , G11C13/0007 , G11C2213/12 , G11C2213/32 , G11C2213/34 , G11C2213/72 , G11C2213/73 , H01L27/24 , H01L27/2409 , H01L27/2463 , H01L29/8615 , H01L29/872 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： A switchable junction (600) having an intrinsic diode (634) formed with a voltage dependent resistor (640) is disclosed. The switchable junction comprises a first electrode (618), a second electrode (622), and a memristive matrix (620) configured to form an electrical interface (626) with the first electrode (618). The electrical interface has a programmable conductance. The voltage dependent resistor (640) is in electrical contact with the memristive matrix (620). The voltage dependent resistor is configured to form a rectifying diode interface (628) with the second electrode (622).
摘要翻译： 公开了具有形成有电压依赖电阻器（640）的本征二极管（634）的可切换接点（600）。 可切换接头包括第一电极（618），第二电极（622）和配置成与第一电极（618）形成电接口（626）的忆阻矩阵（620）。 电气接口具有可编程电导。 电压相关电阻器（640）与忆阻矩阵（620）电接触。 电压相关电阻器被配置为与第二电极（622）形成整流二极管接口（628）。
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公开(公告)号：US08547727B2
公开(公告)日：2013-10-01
申请号：US13119932
申请日：2008-12-12
申请人： Wei Wu , John Paul Strachan , R. Stanley Williams , Marco Florentino , Shih-Yuan Wang , Nathaniel J. Quitoriano , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
发明人： Wei Wu , John Paul Strachan , R. Stanley Williams , Marco Florentino , Shih-Yuan Wang , Nathaniel J. Quitoriano , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
IPC分类号： G11C11/00
CPC分类号： H01L45/145 , H01L27/2472 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/14 , H01L45/146 , H01L45/147
摘要： A memristive routing device includes a memristive matrix, mobile dopants moving with the memristive matrix in response to programming electrical fields and remaining stable within the memristive matrix in the absence of the programming electrical fields; and at least three electrodes surrounding the memristive matrix. A method for tuning electrical circuits with a memristive device includes measuring a circuit characteristic and applying a programming voltage to the memristive device which causes motion of dopants within the memristive device to alter the circuit characteristic. A method for increasing a switching speed of a memristive device includes drawing dopants from two geometrically separated locations into close proximity to form two conductive regions and then switching the memristive device to a conductive state by applying a programming voltage which rapidly merges the two conductive regions to form a conductive pathway between a source electrode and a drain electrode.
摘要翻译： 忆阻路由设备包括忆阻矩阵，响应于编程电场而与忆阻矩阵一起移动的移动掺杂物，并且在没有编程电场的情况下在忆阻矩阵内保持稳定; 以及围绕忆阻矩阵的至少三个电极。 一种用忆阻器件调谐电路的方法包括测量电路特性并将编程电压施加到忆阻器件，其使得忆阻器件内的掺杂剂的运动改变电路特性。 用于增加忆阻器件的切换速度的方法包括将来自两个几何分离位置的掺杂剂绘制成紧密接近形成两个导电区域，然后通过施加快速合并两个导电区域的编程电压将忆阻器件切换到导通状态 在源电极和漏电极之间形成导电路径。
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公开(公告)号：US20110182107A1
公开(公告)日：2011-07-28
申请号：US13119932
申请日：2008-12-12
申请人： Wei Wu , John Paul Strachen , R. Stanely Williams , Marco Florentino , Shih-Yuan Wang , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
发明人： Wei Wu , John Paul Strachen , R. Stanely Williams , Marco Florentino , Shih-Yuan Wang , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
CPC分类号： H01L45/145 , H01L27/2472 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/14 , H01L45/146 , H01L45/147
摘要： A memristive routing device (200) includes a memristive matrix (240), mobile dopants (255) moving with the memristive matrix (240) in response to programming electrical fields and remaining stable within the memristive matrix (240) in the absence of the programming electrical fields; and at least three electrodes (210, 220, 230) surrounding the memristive matrix (240). A method for tuning electrical circuits with a memristive device (900) includes measuring a circuit characteristic (805) and applying a programming voltage to the memristive device (900) which causes motion of dopants within the memristive device (900) to alter the circuit characteristic (805). A method for increasing a switching speed of a memristive device (1300) includes drawing dopants from two geometrically separated locations into close proximity to form two conductive regions (1380, 1390) and then switching the memristive device (1300) to a conductive state by applying a programming voltage which rapidly merges the two conductive regions (1380, 1390) to form a conductive pathway between a source electrode (1310) and a drain electrode (1320).
摘要翻译： 忆阻路由设备（200）包括忆阻矩阵（240），移动掺杂物（255）响应于编程电场而与忆阻矩阵（240）一起移动，并且在没有编程的情况下保持稳定在忆阻矩阵（240）内 电场; 以及围绕所述忆阻矩阵（240）的至少三个电极（210,220,230）。 一种利用忆阻器件（900）来调谐电路的方法包括测量电路特性（805）并将编程电压施加到忆阻器件（900），其使得忆阻器件（900）内的掺杂剂的运动改变电路特性 （805）。 提高忆阻装置（1300）的切换速度的方法包括将来自两个几何分离的位置的掺杂剂绘制成紧邻形成两个导电区域（1380,1390），然后通过应用将所述忆阻装置（1300）切换到导电状态 编程电压，其迅速地合并两个导电区域（1380,1390）以在源电极（1310）和漏电极（1320）之间形成导电通路。
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公开(公告)号：US20110121359A1
公开(公告)日：2011-05-26
申请号：US13056101
申请日：2008-07-31
CPC分类号： H01L29/861 , H01L27/101 , H01L27/1021 , H01L29/8615 , H01L29/8616 , H01L29/872 , H01L45/08 , H01L45/1233 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147
摘要： Embodiments of the present invention are directed to reconfigurable two-terminal electronic switch devices (100) comprising a compound (102) sandwiched between two electrodes (104,106). These devices are configured so that the two electrode/compound interface regions can be either rectifying or conductive, depending on the concentration of dopants at the respective interface, which provides four different device operating characteristics. By forcing charged dopants into or out of the interface regions with an applied electric field pulse, a circuit element can be switched from one type of stable operation to another in at least three different ways. A family of devices built to express these properties display behaviors that provide new opportunities for nanoscale electronic devices.
摘要翻译： 本发明的实施例涉及包括夹在两个电极（104,106）之间的化合物（102）的可重新配置的两端子电子开关装置（100）。 这些器件被配置为使得两个电极/复合界面区域可以是整流或导电，这取决于各个界面处的掺杂剂的浓度，其提供四种不同的器件工作特性。 通过用施加的电场脉冲将带电荷的掺杂剂强制进出界面区域，电路元件可以以至少三种不同的方式从一种类型的稳定操作切换到另一种。 一系列用于表现这些属性的设备显示出为纳米级电子设备提供新机会的行为。
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