Abstract:
Bulk materials having a kinetically limited nano-scale diffusion bond is provided. The bulk materials having a kinetically limited nano-scale diffusion bond includes transparent material, absorbent opaque material and a diffusion bond. The transparent material has properties that allow an electromagnetic beam of a select wavelength to pass there through without more than minimal energy absorption. The absorbent opaque material has properties that significantly absorb energy from the electromagnetic beam. The diffusion bond is formed by the electromagnetic beam bonding the transparent material to the absorbent opaque material. Moreover, the diffusion bond has a thickness that is less than 1000 nm.
Abstract:
Bulk materials having a kinetically limited nano-scale diffusion bond is provided. The bulk materials having a kinetically limited nano-scale diffusion bond includes transparent material, absorbent opaque material and a diffusion bond. The transparent material has properties that allow an electromagnetic beam of a select wavelength to pass there through without more than minimal energy absorption. The absorbent opaque material has properties that significantly absorb energy from the electromagnetic beam. The diffusion bond is formed by the electromagnetic beam bonding the transparent material to the absorbent opaque material. Moreover, the diffusion bond has a thickness that is less than 1000 nm.
Abstract:
A device having embedded metallic structures in a glass is provided. The device includes a first wafer, at least one conductive trace, a planarized insulation layer and a second wafer. The first wafer has at least one first wafer via that is filled with conductive material. The at least one conductive trace is formed on the first wafer. The at least one conductive trace is in contact with the at least one first wafer via that is filled with the conductive material. The planarized insulation layer is formed over the first wafer and at least one conductive trace. The planarized insulation layer further has at least one insulation layer via that provides a path to a portion of the at least one conductive trace. The second wafer is bonded to the planarized insulation layer.
Abstract:
Various embodiments of a feedthrough assembly and methods of forming such assemblies are disclosed. In one or more embodiments, the feedthrough assembly can include a non-conductive substrate and a feedthrough. The feedthrough can include a via from an outer surface to an inner surface of the non-conductive substrate, a conductive material disposed in the via, and an external contact disposed over the via on the outer surface of the non-conductive substrate. The external contact can be electrically coupled to the conductive material disposed in the via. And the external contact can be hermetically sealed to the outer surface of the non-conductive substrate by a bond surrounding the via. In one or more embodiments, the bond can be a laser bond.
Abstract:
A method includes depositing a thin film on a first surface of a first substrate and moving a second surface of a second substrate into contact with the thin film such that the thin film is located between the first and second surfaces. The method further includes generating electromagnetic (EM) radiation of a first wavelength, the first wavelength selected such that the thin film absorbs EM radiation at the first wavelength. Additionally, the method includes directing the EM radiation through one of the first and second substrates and onto a region of the thin film until the first and second substrates are fused in the region.