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公开(公告)号：US07119418B2
公开(公告)日：2006-10-10
申请号：US10632009
申请日：2003-07-31
IPC分类号： H01L23/58
CPC分类号： C23C18/122 , C23C18/00 , C23C18/08 , C23C18/1204 , C23C18/1208 , C23C18/1212 , C23C18/1216 , C23C18/1275 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/288 , H01L21/3121 , H01L21/31695 , H01L21/76801 , H01L21/76841 , H01L21/76877 , H01L2924/0002 , H01L2924/00
摘要： Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the substrate surface. Such approach permits use of precursors that otherwise would be wholly unsuitable for deposition applications, as lacking requisite volatility and transport characteristics for vapor phase deposition processes.
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12.发明申请FORMULATIONS FOR REMOVING COOPER-CONTAINING POST-ETCH RESIDUE FROM MICROELECTRONIC DEVICES 审中-公开用于从微电子设备中去除合成的后置残留物的配方公开(公告)号：US20090301996A1
公开(公告)日：2009-12-10
申请号：US12093125
申请日：2006-11-07
CPC分类号： C11D11/0047 , C11D3/0073 , H01L21/02063
摘要： A method and composition for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes a diluent, a solvent and a copper corrosion inhibitor, wherein the diluent may be a dense fluid or a liquid solvent. The removal compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.
摘要翻译： 描述了用于从图案化的微电子器件去除含铜的后蚀刻和/或后灰渣的方法和组合物。 除去组合物包括稀释剂，溶剂和铜缓蚀剂，其中稀释剂可以是致密流体或液体溶剂。 去除组合物有效地从微电子器件去除含铜的蚀刻后残留物，而不损害暴露的低k电介质和金属互连材料。
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13.发明授权公开(公告)号：US06735978B1
公开(公告)日：2004-05-18
申请号：US10364558
申请日：2003-02-11
IPC分类号： F25D100
CPC分类号： C01B32/50 , Y02P20/544
摘要： A system and process for utilization and disposition of a supercritical fluid composition, in which a supercritical fluid (SCF) composition is used in an SCF-using process facility such as a semiconductor manufacturing plant. The supercritical fluid composition is withdrawn from the process facility containing at least one component that is extraneous with respect to the further disposition of the supercritical fluid composition. The withdrawn supercritical fluid composition is converted to a pressurized liquid, which is treated to at least partially remove the extraneous component(s) therefrom. The extraneous component(s)-depleted pressurized liquid in its further disposition can be reconverted to a supercritical state for recycle to the SCF-using process facility, or it can be gasified and discharged to the atmosphere in the case of supercritical fluids such as CO2.
摘要翻译： 一种用于利用和处置超临界流体组合物的系统和方法，其中超临界流体（SCF）组合物在诸如半导体制造厂的SCF使用过程设备中使用。 超临界流体组合物从处理设备中取出，其中含有至少一种相对于超临界流体组合物的进一步处置是无关的组分。 将取出的超临界流体组合物转化为加压液体，其被处理以至少部分地从其中除去外来成分。 在其进一步的处置中，去除加压液体的外来成分可以再转化为超临界状态，以再循环至使用SCF的工艺设备，或者在超临界流体如CO2的情况下，可将其气化并排放到大气中 。
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14.发明授权公开(公告)号：US07553803B2
公开(公告)日：2009-06-30
申请号：US10790535
申请日：2004-03-01
CPC分类号： C11D11/0047 , B08B7/0021 , C11D3/02 , C11D3/042 , C11D3/046 , C11D3/3749 , C11D3/43 , C11D7/02 , C11D7/08 , C11D7/10 , C11D7/5004
摘要： A method and composition for removing silicon-containing particulate material, such as silicon nitrides and silicon oxides, from patterned Si/SiO2 semiconductor wafer surfaces is described. The composition includes a supercritical fluid (SCF), an etchant species, a co-solvent, a surface passivator, a binder, deionized water, and optionally a surfactant. The SCF-based compositions substantially remove the contaminating particulate material from the wafer surface prior to subsequent processing, thus improving the morphology, performance, reliability and yield of the semiconductor device.
摘要翻译： 描述了从图案化的Si / SiO 2半导体晶片表面去除含硅颗粒材料如氮化硅和氧化硅的方法和组合物。 组合物包括超临界流体（SCF），蚀刻剂物质，共溶剂，表面钝化剂，粘合剂，去离子水和任选的表面活性剂。 基于SCF的组合物在随后的处理之前基本上从晶片表面除去污染的颗粒材料，从而改善半导体器件的形态，性能，可靠性和产量。
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15.发明申请Formulations for Cleaning Ion-Implanted Photoresist Layers from Microelectronic Devices 有权用于从微电子器件清洗离子注入光刻胶层的配方公开(公告)号：US20080269096A1
公开(公告)日：2008-10-30
申请号：US11911616
申请日：2006-04-14
IPC分类号： G03F7/42
CPC分类号： C11D3/042 , C11D3/2086 , C11D3/245 , C11D3/28 , C11D3/30 , C11D3/3427 , C11D3/368 , C11D3/43 , C11D7/08 , C11D7/261 , C11D7/30 , C11D7/32 , C11D7/3209 , C11D7/3218 , C11D7/3281 , C11D7/34 , C11D7/36 , C11D11/0047
摘要： A method and composition for removing bulk and ion-implanted photoresist and/or post-etch residue material from densely patterned microelectronic devices is described. The composition includes a co-solvent, a chelating agent, optionally an ion pairing reagent, and optionally a surfactant. The composition may further include dense fluid. The compositions effectively remove the photoresist and/or post-etch residue material from the microelectronic device without substantially over-etching the underlying silicon-containing layer(s) and metallic interconnect materials.
摘要翻译： 描述了用于从致密图案化的微电子器件去除体积和离子注入的光致抗蚀剂和/或蚀刻后残留物的方法和组合物。 该组合物包括共溶剂，螯合剂，任选的离子配对试剂和任选的表面活性剂。 该组合物可以进一步包括稠密的流体。 组合物有效地从微电子器件去除光致抗蚀剂和/或蚀刻后残留物，而基本上不会过度蚀刻下面的含硅层和金属互连材料。
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16.发明授权Formulations for cleaning ion-implanted photoresist layers from microelectronic devices 有权用于从微电子器件清洗离子注入的光致抗蚀剂层的制剂公开(公告)号：US08114220B2
公开(公告)日：2012-02-14
申请号：US11911616
申请日：2006-04-14
CPC分类号： C11D3/042 , C11D3/2086 , C11D3/245 , C11D3/28 , C11D3/30 , C11D3/3427 , C11D3/368 , C11D3/43 , C11D7/08 , C11D7/261 , C11D7/30 , C11D7/32 , C11D7/3209 , C11D7/3218 , C11D7/3281 , C11D7/34 , C11D7/36 , C11D11/0047
摘要： A method and composition for removing bulk and ion-implanted photoresist and/or post-etch residue material from densely patterned microelectronic devices is described. The composition includes a co-solvent, a chelating agent, optionally an ion pairing reagent, and optionally a surfactant. The composition may further include dense fluid. The compositions effectively remove the photoresist and/or post-etch residue material from the microelectronic device without substantially over-etching the underlying silicon-containing layer(s) and metallic interconnect materials.
摘要翻译： 描述了用于从致密图案化的微电子器件去除体积和离子注入的光致抗蚀剂和/或蚀刻后残留物的方法和组合物。 该组合物包括共溶剂，螯合剂，任选的离子配对试剂和任选的表面活性剂。 该组合物可以进一步包括稠密的流体。 组合物有效地从微电子器件去除光致抗蚀剂和/或蚀刻后残留物，而基本上不会过度蚀刻下面的含硅层和金属互连材料。
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17.发明申请REMOVAL OF PARTICLE CONTAMINATION ON PATTERNED SILICON/SILICON DIOXIDE USING DENSE FLUID/CHEMICAL FORMULATIONS 审中-公开使用渗漏液/化学制剂去除图案化硅/二氧化硅上的颗粒污染公开(公告)号：US20090217940A1
公开(公告)日：2009-09-03
申请号：US12066600
申请日：2006-09-11
IPC分类号： B08B3/08 , B65D69/00 , H01L21/306 , C11D7/28
CPC分类号： C11D1/004 , B08B7/0021 , C11D1/83 , C11D3/042 , C11D3/046 , C11D3/201 , C11D3/2034 , C11D3/24 , C11D11/0047 , H01L21/02063 , H01L21/02101
摘要： A cleaning composition for cleaning particulate contamination from small dimensions on microelectronic device substrates. The cleaning composition contains dense CO2 (preferably supercritical CO2 (SCCO2)), alcohol, fluoride source, anionic surfactant source, non-ionic surfactant source, and optionally, hydroxyl additive. The cleaning composition enables damage-free, residue-free cleaning of substrates having particulate contamination on Si/SiO2 substrates.
摘要翻译： 一种用于从微电子器件基底上的小尺寸清洁颗粒污染物的清洁组合物。 清洁组合物包含致密的CO 2（优选超临界CO 2（SCCO 2）），醇，氟化物源，阴离子表面活性剂源，非离子表面活性剂源和任选的羟基添加剂。 清洁组合物可以对Si / SiO2基板上的颗粒污染物进行无损伤，无残留的清洗。
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18.发明授权Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations 有权使用超临界流体/化学配方去除MEMS牺牲层公开(公告)号：US07517809B2
公开(公告)日：2009-04-14
申请号：US11620902
申请日：2007-01-08
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02101 , B81C1/00476 , H01L21/31105 , H01L21/32131
摘要： A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched substrates experience lower incidents of stiction relative to substrates etched using conventional wet etching techniques.
摘要翻译： 描述了用于从微机电系统（MEMS）和其它具有这种牺牲层的半导体衬底去除含硅牺牲层的方法和组合物。 蚀刻组合物包括超临界流体（SCF），蚀刻剂物质，共溶剂和任选的表面活性剂。 这样的蚀刻组合物克服了作为清洗剂的SCF的固有缺陷，即SCF的非极性特征以及它们不溶于必须从半导体衬底去除的极性物质。 所得到的蚀刻的衬底相对于使用常规湿蚀刻技术蚀刻的衬底的沉降事件较少。
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19.发明申请DENSE FLUID COMPOSITIONS FOR REMOVAL OF HARDENED PHOTORESIST, POST-ETCH RESIDUE AND/OR BOTTOM ANTI-REFLECTIVE COATING 审中-公开用于去除硬化光催化剂，去除后残留物和/或底部抗反射涂层的DENSE流体组合物公开(公告)号：US20090192065A1
公开(公告)日：2009-07-30
申请号：US11917654
申请日：2006-06-16
IPC分类号： G03F7/42
CPC分类号： C11D11/0047 , C11D3/3947 , C11D7/08 , C11D7/264 , C11D7/265 , C11D7/32 , C11D7/34 , C11D7/5004 , G03F7/425 , G03F7/426 , H01L21/02063
摘要： A method and composition for removing hardened photoresist, post-etch photoresist, and/or bottom anti-reflective coating from a microelectronic device is described. The composition may include a dense fluid, e.g., a supercritical fluid, and a dense fluid concentrate including a co-solvent, optionally a fluoride source, and optionally an acid. The dense fluid compositions substantially remove the contaminating residue and/or layers from the microelectronic device prior to subsequent processing, thus improving the morphology, performance, reliability and yield of the microelectronic device.
摘要翻译： 描述了用于从微电子器件去除硬化的光致抗蚀剂，蚀刻后光致抗蚀剂和/或底部抗反射涂层的方法和组合物。 组合物可以包括致密流体，例如超临界流体，以及包含共溶剂，任选的氟化物源和任选的酸的致密流体浓缩物。 致密的流体组合物在随后的处理之前基本上从微电子器件去除污染的残余物和/或层，从而改善微电子器件的形态，性能，可靠性和产量。
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20.发明授权Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist 失效用于去除离子注入光刻胶的非氟化物超临界流体组合物公开(公告)号：US07557073B2
公开(公告)日：2009-07-07
申请号：US10827395
申请日：2004-04-19
IPC分类号： C11D7/50
CPC分类号： C11D11/0047 , B08B7/0021 , C11D3/0042 , C11D3/02 , C11D3/044 , C11D3/43 , C11D7/02 , C11D7/5004 , G03F7/40 , G03F7/422 , G03F7/425 , G03F7/426
摘要： A method and composition for removing ion-implanted photoresist from semiconductor substrates having such photoresist is described. The removal composition contains supercritical CO2 (SCCO2), a co-solvent and a reducing agent for use in removing ion-implanted photoresist. Such removal composition overcomes the intrinsic deficiency of SCCO2 as a removal reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the photoresist and that must be removed from the semiconductor substrate for efficient cleaning.
摘要翻译： 描述了用于从具有这种光致抗蚀剂的半导体衬底去除离子注入的光致抗蚀剂的方法和组合物。 去除组合物含有超临界CO 2（SCCO 2），用于去除离子注入的光致抗蚀剂的共溶剂和还原剂。 这种去除组合物克服了作为去除试剂的SCCO 2的固有缺陷，即SCCO2的非极性特征及其不溶解物质如无机盐和存在于光致抗蚀剂中的极性有机化合物，并且必须除去 从半导体基板进行高效清洗。
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