公开(公告)号：US07446373B2

公开(公告)日：2008-11-04

申请号：US10939154

申请日：2004-09-10

申请人： Markus Zundel ,  Rudolf Zelsacher ,  Franz Hirler ,  Dietmar Kotz ,  Hermann Peri ,  Armin Willmeroth

发明人： Markus Zundel ,  Rudolf Zelsacher ,  Franz Hirler ,  Dietmar Kotz ,  Hermann Peri ,  Armin Willmeroth

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L29/0615 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/7811

摘要： A semiconductor component and also a method for producing it are disclosed. In one embodiment, the semiconductor component includes a surface region or a modified doping region is provided alternatively or simultaneously in the edge region of the cell array, in which surface region or modified doping region the doping concentration is lowered and/or in which surface region or modified doping region the conductivity type is formed such that it is opposite to the conductivity type of the actual semiconductor material region, or in which a field plate region is provided.

摘要翻译： 公开了一种半导体元件及其制造方法。 在一个实施例中，半导体部件包括表面区域或修改的掺杂区域交替地或同时地设置在电池阵列的边缘区域中，其中掺杂浓度降低的表面区域或修饰掺杂区域和/或其中表面区域 或改性掺杂区域形成导电类型，使其与实际的半导体材料区域的导电类型相反，或者设置有场板区域。

公开(公告)号：US20080265320A1

公开(公告)日：2008-10-30

申请号：US12019271

申请日：2008-01-24

申请人： Anton Mauder ,  Stefan Sedlmaier ,  Franz Hirler ,  Armin Willmeroth ,  Gerhard Noebauer

发明人： Anton Mauder ,  Stefan Sedlmaier ,  Franz Hirler ,  Armin Willmeroth ,  Gerhard Noebauer

IPC分类号： H01L29/06

CPC分类号： H01L29/7813 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/7803 ,  H01L29/7831 ,  H03K17/04206 ,  H03K17/063 ,  H03K17/567

摘要： A component arrangement including a MOS transistor having a field electrode is disclosed. One embodiment includes a gate electrode, a drift zone and a field electrode, arranged adjacent to the drift zone and dielectrically insulated from the drift zone by a dielectric layer a charging circuit, having a rectifier element connected between the gate electrode and the field electrode.

摘要翻译： 公开了一种包括具有场电极的MOS晶体管的部件布置。 一个实施例包括栅极，漂移区和场电极，其布置成与漂移区相邻并且通过介电层与漂移区介电绝缘，该充电电路具有连接在栅电极和场电极之间的整流元件。

公开(公告)号：US20080265318A1

公开(公告)日：2008-10-30

申请号：US12167437

申请日：2008-07-03

申请人： Markus Zundel ,  Rudolf Zelsacher ,  Franz Hirler ,  Dietmar Kotz ,  Hermann Peri ,  Armin Willmeroth

发明人： Markus Zundel ,  Rudolf Zelsacher ,  Franz Hirler ,  Dietmar Kotz ,  Hermann Peri ,  Armin Willmeroth

IPC分类号： H01L27/088 ,  H01L21/8234

CPC分类号： H01L29/7813 ,  H01L29/0615 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/7811

摘要： A semiconductor component includes a surface region. A modified doping region is provided in the edge region of the cell array. In the surface region or modified doping region the doping concentration is lowered and/or in the surface region or modified doping region the conductivity type is formed such that it is opposite to the conductivity type of the actual semiconductor material region, or in which a field plate region is provided.

摘要翻译： 半导体部件包括表面区域。 在单元阵列的边缘区域中提供修改的掺杂区域。 在表面区域或改性掺杂区域中，掺杂浓度降低和/或在表面区域或修饰掺杂区域中形成导电类型，使其与实际半导体材料区域的导电类型相反，或者其中场 板区域。

公开(公告)号：US20080197380A1

公开(公告)日：2008-08-21

申请号：US11706860

申请日：2007-02-15

申请人： Stefan Sedlmaier ,  Anton Mauder ,  Armin Willmeroth ,  Franz Hirler

发明人： Stefan Sedlmaier ,  Anton Mauder ,  Armin Willmeroth ,  Franz Hirler

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7804

摘要： A semiconductor component is disclosed herein comprising a drift zone and a drift control zone. The drift control zone is arranged adjacent to the drift zone and is dielectrically insulated from the drift zone by a dielectric layer. The drift control zone includes at least one first semiconductor layer and one second semiconductor layer. The first semiconductor layer has a higher charge carrier mobility than the second semiconductor layer.

摘要翻译： 本文公开了一种半导体元件，其包括漂移区和漂移控制区。 漂移控制区域布置成与漂移区相邻，并且通过介电层与漂移区介电绝缘。 漂移控制区包括至少一个第一半导体层和一个第二半导体层。 第一半导体层具有比第二半导体层更高的电荷载流子迁移率。

公开(公告)号：US20080179670A1

公开(公告)日：2008-07-31

申请号：US12021709

申请日：2008-01-29

申请人： Armin Willmeroth ,  Franz Hirler

发明人： Armin Willmeroth ,  Franz Hirler

IPC分类号： H01L29/06

CPC分类号： H01L29/7802 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/7816 ,  H01L29/7825 ,  H03K17/063 ,  H03K2017/6878

摘要： A component arrangement including a MOS transistor having a field electrode is disclosed. One embodiment includes a gate electrode, a drift zone and a field electrode, arranged adjacent to the drift zone and dielectrically insulated from the drift zone by a dielectric layer a charging circuit, having a rectifier element connected between the gate electrode and the field electrode.

摘要翻译： 公开了一种包括具有场电极的MOS晶体管的部件布置。 一个实施例包括栅极，漂移区和场电极，其布置成与漂移区相邻并且通过介电层与漂移区介电绝缘，该充电电路具有连接在栅电极和场电极之间的整流元件。

公开(公告)号：US08569150B2

公开(公告)日：2013-10-29

申请号：US13085196

申请日：2011-04-12

申请人： Armin Willmeroth ,  Franz Hirler

发明人： Armin Willmeroth ,  Franz Hirler

IPC分类号： H01L21/20 ,  H01L21/38

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/8083

摘要： A semiconductor device with a semiconductor body and method for its production is disclosed. The semiconductor body includes drift zones of epitaxially grown semiconductor material of a first conduction type. The semiconductor body further includes charge compensation zones of a second conduction type complementing the first conduction type, which are arranged laterally adjacent to the drift zones. The charge compensation zones are provided with a laterally limited charge compensation zone doping, which is introduced into the epitaxially grown semiconductor material. The epitaxially grown semiconductor material includes 20 to 80 atomic % of the doping material of the drift zones and a doping material balance of 80 to 20 atomic % introduced by ion implantation and diffusion.

摘要翻译： 公开了一种半导体器件及其制造方法。 半导体本体包括第一导电类型的外延生长的半导体材料的漂移区。 半导体本体还包括与第一导电类型相互补充的第二导电类型的电荷补偿区，它们被布置成横向邻近漂移区。 电荷补偿区带有横向有限的电荷补偿区掺杂，其被引入外延生长的半导体材料中。 外延生长的半导体材料包括漂移区的掺杂材料的20至80原子％和通过离子注入和扩散引入的80至20原子％的掺杂材料平衡。

公开(公告)号：US08461648B2

公开(公告)日：2013-06-11

申请号：US11996906

申请日：2006-07-27

申请人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

发明人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

IPC分类号： H01L29/732

CPC分类号： H01L29/7803 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4916 ,  H01L29/66734 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.

公开(公告)号：US08405146B2

公开(公告)日：2013-03-26

申请号：US12773580

申请日：2010-05-04

申请人： Armin Willmeroth ,  Franz Hirler

发明人： Armin Willmeroth ,  Franz Hirler

IPC分类号： H01L29/76

CPC分类号： H01L29/7802 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/7816 ,  H01L29/7825 ,  H03K17/063 ,  H03K2017/6878

摘要： A component arrangement including a MOS transistor having a field electrode is disclosed. One embodiment includes a gate electrode, a drift zone and a field electrode, arranged adjacent to the drift zone and dielectrically insulated from the drift zone by a dielectric layer a charging circuit, having a rectifier element connected between the gate electrode and the field electrode.

摘要翻译： 公开了一种包括具有场电极的MOS晶体管的部件布置。 一个实施例包括栅极，漂移区和场电极，其布置成与漂移区相邻并且通过介电层与漂移区介电绝缘，该充电电路具有连接在栅电极和场电极之间的整流元件。

公开(公告)号：US20120018856A1

公开(公告)日：2012-01-26

申请号：US12842488

申请日：2010-07-23

申请人： Joachim Weyers ,  Armin Willmeroth ,  Anton Mauder ,  Franz Hirler

发明人： Joachim Weyers ,  Armin Willmeroth ,  Anton Mauder ,  Franz Hirler

IPC分类号： H01L29/06 ,  H01L21/22 ,  H01L21/336

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/66712 ,  H01L29/8613 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a method of forming a semiconductor device with drift regions of a first doping type and compensation regions of a second doping type, and a semiconductor device with drift regions of a first doping type and compensation regions of a second doping type.

摘要翻译： 公开了一种形成具有第一掺杂类型的漂移区和第二掺杂型的补偿区的半导体器件的方法，以及具有第一掺杂类型的漂移区和第二掺杂类型的补偿区的半导体器件。

公开(公告)号：US20100078694A1

公开(公告)日：2010-04-01

申请号：US12241808

申请日：2008-09-30

申请人： Armin Willmeroth ,  Anton Mauder ,  Franz Hirler

发明人： Armin Willmeroth ,  Anton Mauder ,  Franz Hirler

IPC分类号： H01L27/06 ,  H01L21/8234

CPC分类号： H01L27/088 ,  H01L27/0629 ,  H01L29/42356 ,  H01L29/4916 ,  H01L29/7828 ,  H03K17/567 ,  H03K2017/6875 ,  H03K2217/0036

摘要： A description is given of a normally on semiconductor component having a drift zone, a drift control zone and a drift control zone dielectric arranged between the drift zone and the drift control zone.

摘要翻译： 给出了具有漂移区，漂移控制区和布置在漂移区和漂移控制区之间的漂移控制区电介质的常规半导体元件的描述。