公开(公告)号：US5982099A

公开(公告)日：1999-11-09

申请号：US624124

申请日：1996-03-29

申请人： Michael S. Barnes ,  Brett Richardson ,  Tuan Ngo ,  John Patrick Holland

发明人： Michael S. Barnes ,  Brett Richardson ,  Tuan Ngo ,  John Patrick Holland

IPC分类号： H05H1/36 ,  H05H1/24

CPC分类号： H05H1/36

摘要： A gas in a vacuum plasma processing chamber is ignited to a plasma by subjecting the gas to an r.f. field derived from an r.f. source having a frequency and power level sufficient to ignite the gas into the plasma and to maintain the plasma. The r.f. field is supplied to the gas by a reactive impedance element connected via a matching network to the r.f. source. The matching network includes first and second variable reactances that control loading of the source and tuning a load, including the reactive impedance element and the plasma, to the source. The value of only one of the reactances is varied until a local maximum of a function of power coupled between the source and the load is reached. The value of only the other reactance is varied until a local maximum of the function is reached. The two varying steps are then repeated as necessary.

摘要翻译： 真空等离子体处理室中的气体通过使气体经受r.f.而点燃到等离子体。 来自r.f.的字段 源具有足以将气体点燃到等离子体中并维持等离子体的频率和功率水平。 r.f. 场由通过匹配网络连接到r.f的无功阻抗元件提供给气体。 资源。 匹配网络包括第一和第二可变电抗，其控制源的负载并且将包括无功阻抗元件和等离子体的负载调谐到源。 只有一个电抗的值是变化的，直到达到源和负载之间的功率函数的局部最大值。 只有其他电抗的值才会变化，直到达到功能的局部最大值。 然后根据需要重复两个可变步骤。

公开(公告)号：US5612851A

公开(公告)日：1997-03-18

申请号：US471105

申请日：1995-06-06

申请人： Michael S. Barnes ,  John H. Keller ,  Joseph S. Logan ,  Robert E. Tompkins ,  Robert P. Westerfield, Jr.

发明人： Michael S. Barnes ,  John H. Keller ,  Joseph S. Logan ,  Robert E. Tompkins ,  Robert P. Westerfield, Jr.

IPC分类号： B23Q3/15 ,  H01L21/68 ,  H01L21/683 ,  H02N13/00

CPC分类号： H01L21/6833 ,  H01L21/68 ,  H01L21/6831 ,  H02N13/00 ,  H01J2237/0206 ,  Y10T279/23

摘要： An electrostatic chuck is disclosed that is resistant to the formation of vacuum arcs between the back of the wafer being processed and the body of the chuck. A guard ring surrounds the chuck and floats close to the self-bias potential induced by the plasma on the wafer. The voltage between the wafer and the closest electrode is thereby capacitively divided by the guard ring.

摘要翻译： 公开了一种静电卡盘，其耐受在被加工的晶片的背面和卡盘的主体之间形成真空电弧。 保护环围绕卡盘并且靠近由晶片上的等离子体引起的自偏压可浮动。 因此晶片和最近的电极之间的电压由保护环电容性地分开。

公开(公告)号：US5535507A

公开(公告)日：1996-07-16

申请号：US169911

申请日：1993-12-20

申请人： Michael S. Barnes ,  John H. Keller ,  Joseph S. Logan ,  Raymond R. Ruckel ,  Robert E. Tompkins ,  Robert P. Westerfield, Jr.

发明人： Michael S. Barnes ,  John H. Keller ,  Joseph S. Logan ,  Raymond R. Ruckel ,  Robert E. Tompkins ,  Robert P. Westerfield, Jr.

IPC分类号： B23Q3/15 ,  H01L21/00 ,  H01L21/683 ,  H02N13/00 ,  H01R43/00

CPC分类号： H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T29/49117

摘要： An electrostatic chuck is made by a method in which the component parts are machined, then anodized to provide a hard insulating surface, and then assembled in a fixture, to provide a planar surface for wafer support that retains superior insulating properties; gas may be fed from the rim only, diffusing within interstices between the clamping surface and the wafer and maintaining a desired pressure by flowing radially through an impedance determined by the average spacing between clamping surface and wafer, thereby providing uniform pressure across the clamping surface without the use of elastomeric seals.

摘要翻译： 静电卡盘通过以下方法制成，其中组分部件被加工，然后阳极氧化以提供硬绝缘表面，然后组装在夹具中，以提供保持优异绝缘性能的晶片支撑件的平面表面; 气体可以仅从边缘进料，在夹紧表面和晶片之间的空隙内扩散，并通过径向流过由夹紧表面和晶片之间的平均间隔确定的阻抗来保持期望的压力，由此在夹紧表面上提供均匀的压力而没有 使用弹性密封件。

公开(公告)号：US5505816A

公开(公告)日：1996-04-09

申请号：US168887

申请日：1993-12-16

申请人： Michael S. Barnes ,  John H. Keller ,  William M. Holber ,  Tina J. Cotler ,  Jonathan D. Chapple-Sokol ,  Dragan Podlesnik

发明人： Michael S. Barnes ,  John H. Keller ,  William M. Holber ,  Tina J. Cotler ,  Jonathan D. Chapple-Sokol ,  Dragan Podlesnik

IPC分类号： H01L21/311 ,  H01L21/00

CPC分类号： H01L21/31116 ,  Y10S438/906

摘要： Silicon dioxide on a substrate is directionally etched using a hydrogen halide plasma which is created within an etch chamber. The method selectively etches silicon dioxide relative to polysilicon and silicon nitride. A substrate and the combination of NH.sub.3 and NF.sub.3 gases or the combination of CF.sub.4 and O.sub.2 gases mixed with H.sub.2 and N.sub.2 gases are located within an etch chamber. An electrical field is created within the etch chamber causing the gas mixture to form a plasma. The negative charge at the bottom of the chamber attracts the positively charged plasma, thereby etching the substrate in the downward direction. The result is an anisotropic product. The method is also shown to be effective in non-selectively etching thermal and deposited oxides, resulting in a similar etch rate for the different types of oxides.

摘要翻译： 使用在蚀刻室内产生的卤化氢等离子体对衬底上的二氧化硅进行定向蚀刻。 该方法选择性地相对于多晶硅和氮化硅蚀刻二氧化硅。 衬底和NH3和NF3气体的组合或与H 2和N 2气体混合的CF 4和O 2气体的组合位于蚀刻室内。 在蚀刻室内产生电场，使得气体混合物形成等离子体。 室底部的负电荷吸引带正电的等离子体，从而沿向下的方向蚀刻衬底。 其结果是各向异性产品。 该方法还显示在非选择性蚀刻热和沉积氧化物中有效，导致不同类型氧化物的蚀刻速率相似。

公开(公告)号：US5463525A

公开(公告)日：1995-10-31

申请号：US169932

申请日：1993-12-20

申请人： Michael S. Barnes ,  John H. Keller ,  Joseph S. Logan ,  Robert E. Tompkins ,  Robert P. Westerfield, Jr.

发明人： Michael S. Barnes ,  John H. Keller ,  Joseph S. Logan ,  Robert E. Tompkins ,  Robert P. Westerfield, Jr.

IPC分类号： B23Q3/15 ,  H01L21/68 ,  H01L21/683 ,  H02N13/00

CPC分类号： H01L21/6833 ,  H01L21/68 ,  H01L21/6831 ,  H02N13/00 ,  H01J2237/0206 ,  Y10T279/23

摘要： An electrostatic chuck suppresses the formation of vacuum arcs between the back of the wafer being processed and the body of the chuck by the interposition of a guard ring that floats close to the self-bias potential induced by the plasma on the wafer, thereby capacitively dividing the voltage between the wafer and the closest electrode.

摘要翻译： 静电吸盘通过插入保护环，从而抑制正在处理的晶片的背面与卡盘的主体之间的真空电弧的形成，该保护环漂浮在由晶片上的等离子体引起的自偏压附近，从而电容分开 晶片和最近的电极之间的电压。

公开(公告)号：US5433258A

公开(公告)日：1995-07-18

申请号：US191894

申请日：1994-02-04

申请人： Michael S. Barnes ,  Dennis K. Coultas ,  John C. Forster ,  John H. Keller ,  James A. O'Neill

发明人： Michael S. Barnes ,  Dennis K. Coultas ,  John C. Forster ,  John H. Keller ,  James A. O'Neill

IPC分类号： C23C14/00 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/30 ,  C23C14/34 ,  C23C16/50 ,  H05H1/00

CPC分类号： H01J37/32431 ,  H01J2237/022 ,  H01J2237/028

摘要： Apparatus and methods for plasma processing involving the gettering of particles having a high charge to mass ratio away from a semiconductor wafer are disclosed. In one aspect of the invention, magnets are used to produce a magnetic field which is transverse to an electric field to draw the negative particles away from the wafer to prevent the formation of a sheath which can trap the particles. In a second aspect of the invention, a power source is connected to the wafer electrode to maintain a negative charge on the wafer, thereby preventing negative particles from being drawn to the wafer surface when the plasma is turned off. In other embodiments of the invention, a low density plasma source is used to produce a large plasma sheath which permits particles to cross a chamber to be gettered. A low density plasma discharge followed by a pulse to a higher density is used to overcome the negative effect of an insulating layer between the wafer and the wafer electrode.

摘要翻译： 公开了用于等离子体处理的装置和方法，其涉及吸收远离半导体晶片的高电荷质量比的颗粒。 在本发明的一个方面，磁体用于产生横向于电场的磁场，以将负极微粒从晶片上拉出以防止形成能够捕获颗粒的护套。 在本发明的第二方面中，电源连接到晶片电极以在晶片上保持负电荷，从而防止当等离子体截止时负极被吸引到晶片表面。 在本发明的其它实施例中，使用低密度等离子体源来产生允许颗粒穿过室的大等离子体鞘。 使用低密度等离子体放电，随后是脉冲到较高密度，以克服晶片和晶片电极之间的绝缘层的负面影响。

公开(公告)号：US08795466B2

公开(公告)日：2014-08-05

申请号：US12495724

申请日：2009-06-30

申请人： Michael S. Barnes ,  Terry Bluck

发明人： Michael S. Barnes ,  Terry Bluck

IPC分类号： H01L21/306

CPC分类号： H01L21/67173 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/67346 ,  H01L21/67712 ,  H01L31/18 ,  H05K3/143

摘要： Apparatus and methods are provided that enable processing of patterned layers on substrates using a detachable mask. Unlike prior art where the mask is formed directly over the substrate, according to aspects of the invention the mask is made independently of the substrate. During use, the mask is positioned in close proximity or in contact with the substrate so as to expose only portions of the substrate to processing, e.g., sputtering or etch. Once the processing is completed, the mask is moved away from the substrate and may be used for another substrate. The substrate may be cycled for a given number of substrates and then be removed for cleaning or disposal.

摘要翻译： 提供了使用可拆卸掩模在基板上处理图案化层的装置和方法。 与掩模直接形成在衬底上的现有技术不同，根据本发明的方面，掩模独立于衬底制成。 在使用期间，掩模位于与衬底紧密接近或接触的位置，以便只暴露衬底的一部分以进行处理，例如溅射或蚀刻。 一旦处理完成，掩模就从衬底移开并可用于另一衬底。 衬底可以循环给定数量的衬底，然后被移除以进行清洁或处置。

公开(公告)号：US07861990B2

公开(公告)日：2011-01-04

申请号：US11948986

申请日：2007-11-30

申请人： Michael S. Barnes

发明人： Michael S. Barnes

IPC分类号： A47H1/10

CPC分类号： F21V33/006 ,  E04F10/0662 ,  F21V19/006

摘要： Components for constructing and installing an awning and light support system to provide sun and weather protection to a window or door of a structure are disclosed. Included are a pair of uniquely-constructed bracket members having an L-shaped configuration used to removably secure horizontally-disposed supports and awning spars to provide a frame to support the awning material or skin. Also disclosed is an awning support structure comprising a support channel that extends along the top of an awning and supports a corresponding member attached to an awning frame. In some instances, the awning may be further supported by awning projection props secured between the awning frame and the building at a lower portion of the awning.

摘要翻译： 公开了用于构造和安装遮阳篷和轻型支撑系统以向建筑物的窗户或门提供阳光和天气保护的部件。 包括一对独特构造的支架构件，其具有用于可移除地固定水平布置的支撑件和遮阳翼片的L形构造，以提供支撑遮阳篷材料或皮肤的框架。 还公开了一种遮阳篷支撑结构，其包括支撑通道，该支撑通道沿着遮篷的顶部延伸并且支撑附接到遮阳篷框架的相应构件。 在一些情况下，遮阳篷可以进一步由在遮篷框架和建筑物之间固定在遮篷的下部的遮阳篷投影道具进一步支撑。

公开(公告)号：US20090047417A1

公开(公告)日：2009-02-19

申请号：US12060174

申请日：2008-03-31

申请人： Michael S. Barnes ,  Charles Liu ,  Ren Xu

发明人： Michael S. Barnes ,  Charles Liu ,  Ren Xu

IPC分类号： C23C14/54 ,  B05C11/10 ,  B05D5/12

CPC分类号： G11B5/8408 ,  F16N29/02

摘要： Lubricant coatings are applied as vapor to magnetic disks. The method and apparatus include applying vaporizing heat to a pre-determined amount of liquid to form a vapor. Precision delivery of lubricant vapor allows close-loop lube thickness control. The flow of the liquid to the heater is controlled such that only a pre-determined amount from the reservoir flows to the heater at a time, the pre-determined amount is vaporized. According to an aspect, the pre-determined amount of liquid is transferred from the reservoir for the application of vaporizing heat; isolating the reservoir from the vacuum of the vacuum chamber. The method enables multiple types of lubricants to be applied to the disk. Another heater is included for applying vaporizing heat to a second liquid to form a second vapor to supply to the disk. According to an aspect, pulsed lubricant vapor delivery is provided, conserving lubricant and minimizing thermal decomposition.

摘要翻译： 润滑剂涂层作为蒸汽施加到磁盘上。 该方法和装置包括将蒸发热量施加到预定量的液体以形成蒸气。 润滑剂蒸汽的精确输送允许闭环润滑剂厚度控制。 控制液体到加热器的流动，使得只有来自储存器的预定量一次才流入加热器，预定量被蒸发。 根据一个方面，预定量的液体从储存器转移以用于蒸发热; 将储存器与真空室的真空隔离。 该方法可以将多种润滑剂应用于磁盘。 包括另一个加热器，用于将蒸发热量施加到第二液体以形成第二蒸气以供应到盘。 根据一个方面，提供脉冲润滑剂蒸汽输送，保护润滑剂并使热分解最小化。

公开(公告)号：US20080202924A1

公开(公告)日：2008-08-28

申请号：US12032525

申请日：2008-02-15

申请人： Terry Bluck ,  Patrick R. Ward ,  Michael S. Barnes

发明人： Terry Bluck ,  Patrick R. Ward ,  Michael S. Barnes

IPC分类号： C23C14/34

CPC分类号： H01J37/34 ,  H01J37/32009 ,  H01J37/32027 ,  H01J37/3444

摘要： An arrangement for concurrently powering a plurality of sputtering sources. A power supply is coupled to a charge accumulator. The charge accumulator is coupled to several sputtering sources via switching devices. The duty cycle of each switching device is used to individually control the power delivered to each sputtering source. In another arrangement, a power source is coupled to an impedance match circuit. The impedance match circuit is coupled to several sputtering sources via several balance elements. Each balance element is operated to individually control the power delivered to the sputtering source.

摘要翻译： 用于同时供电多个溅射源的装置。 电源耦合到电荷累加器。 电荷累加器通过开关装置耦合到多个溅射源。 每个开关装置的占空比用于单独地控制传送到每个溅射源的功率。 在另一种布置中，电源耦合到阻抗匹配电路。 阻抗匹配电路通过几个平衡元件耦合到多个溅射源。 操作每个平衡元件以单独地控制传送到溅射源的功率。