公开(公告)号：US10818681B2

公开(公告)日：2020-10-27

申请号：US16160342

申请日：2018-10-15

Applicant: Micron Technology Inc.

Inventor： Yi Hu ,  Jian Li ,  Lifang Xu ,  Xiaosong Zhang

IPC: H01L27/11565 ,  H01L21/768 ,  H01L27/11582

Abstract: In an example, a method of forming a stacked memory array includes, forming a termination structure passing through a stack of alternating first and second dielectrics in a first region of the stack; forming first and second sets of contacts through the stack of alternating first and second dielectrics in a second region of the stack concurrently with forming the termination structure; forming an opening through the stack of alternating first and second dielectrics between the first and second sets of contacts so that the opening terminates at the termination structure; and removing the first dielectrics from the second region by accessing the first dielectrics through the opening so that the first and second sets of contacts pass through the second dielectrics alternating with spaces corresponding to the removed first dielectrics.

公开(公告)号：US12250499B2

公开(公告)日：2025-03-11

申请号：US17806888

申请日：2022-06-14

Applicant: Micron Technology, Inc.

Inventor： Alyssa Scarbrough ,  John Hopkins ,  Zahra Hosseinimakarem ,  Yi Hu

IPC: H04N7/18 ,  G07C5/08 ,  H04N23/60 ,  H04N23/65

Abstract: In some implementations, a device may receive, from a sensor of a vehicle, sensor data. The device may detect whether an event causing damage to the vehicle has occurred or is expected to occur based on the sensor data being greater than a threshold, wherein the threshold is based on an on-off status of the vehicle and a sensor type. The device may activate, based on whether the event has occurred or is expected to occur, a camera of the vehicle to capture video data of a scene associated with the vehicle. The device may transmit, to a server, an indication that indicates the event and the video data.

公开(公告)号：US11631615B2

公开(公告)日：2023-04-18

申请号：US16877233

申请日：2020-05-18

Applicant: Micron Technology, Inc.

Inventor： Yi Hu ,  Kar Wui Thong

IPC: H01L27/1157 ,  H01L27/11582 ,  H01L23/532 ,  H01L21/768 ,  H01L27/11524 ,  H01L27/11556 ,  H01L21/311 ,  H01L23/535

Abstract: A microelectronic device comprises a stack structure comprising alternating conductive structures and insulative structures arranged in tiers, each of the tiers individually comprising a conductive structure and an insulative structure, strings of memory cells vertically extending through the stack structure, the strings of memory cells comprising a channel material vertically extending through the stack structure, another stack structure vertically overlying the stack structure and comprising alternating levels of other conductive structures and other insulative structures, the other stack structure comprising pillars vertically overlying the strings of memory cells, each pillar comprising an other channel material in electrical communication with the channel material of the strings of memory cells, and conductive contact structures vertically overlying the other stack structure, each conductive contact structure comprising an electrically conductive contact at least partially extending into the pillars and a portion extending outside of the pillars having a larger cross-sectional area than the pillars. Related microelectronic devices including self-aligned conductive contact structures, and related electronic systems and methods are also described.

公开(公告)号：US11626423B2

公开(公告)日：2023-04-11

申请号：US17373278

申请日：2021-07-12

Applicant: Micron Technology, Inc.

Inventor： Xiaosong Zhang ,  Yi Hu ,  Tom J. John ,  Wei Yeeng Ng ,  Chandra Tiwari

IPC: H01L21/311 ,  H01L27/11582 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11519

Abstract: In some embodiments, a memory array comprising strings of memory cells comprise laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Insulative pillars are laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The pillars comprise vertically-spaced and radially-projecting insulative rings in the conductive tiers as compared to the insulative tiers. Other embodiments, including methods, are disclosed.

公开(公告)号：US20230058288A1

公开(公告)日：2023-02-23

申请号：US17979750

申请日：2022-11-02

Applicant: Micron Technology, Inc.

Inventor： Raju Ahmed ,  Frank Speetjens ,  Darin S. Miller ,  Siva Naga Sandeep Chalamalasetty ,  Dave Pratt ,  Yi Hu ,  Yung-Ta Sung ,  Aaron K. Belsher ,  Allen R. Gibson

IPC: H01L21/768 ,  H01L23/522

Abstract: Some embodiments include a method of forming an integrated assembly. An arrangement is formed to include a conductive pillar extending through an insulative mass. An upper surface of the conductive pillar is recessed to form a cavity. An insulative collar is formed within the cavity to line an outer lateral periphery of the cavity. A recessed surface of the conductive pillar is exposed at a bottom of the lined cavity. A conductive expanse is formed over the insulative mass. A portion of the conductive expanse extends into the cavity and is configured as an interconnect. The conductive expanse is patterned into multiple conductive structures. One of the conductive structures includes the interconnect.

公开(公告)号：US11585654B2

公开(公告)日：2023-02-21

申请号：US16890364

申请日：2020-06-02

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Zahra Hosseinimakarem ,  Jonathan D. Harms ,  Alyssa N. Scarbrough ,  Dmitry Vengertsev ,  Yi Hu

IPC: G01B11/25 ,  G01B11/30

Abstract: Embodiments of the disclosure are drawn to projecting light on a surface and analyzing the scattered light to obtain spatial information of the surface and generate a three dimensional model of the surface. The three dimensional model may then be analyzed to calculate one or more surface characteristics, such as roughness. The surface characteristics may then be analyzed to provide a result, such as a diagnosis or a product recommendation. In some examples, a mobile device is used to analyze the surface.

公开(公告)号：US10985179B2

公开(公告)日：2021-04-20

申请号：US16532019

申请日：2019-08-05

Applicant: Micron Technology, inc.

Inventor： Yi Hu ,  Merri L. Carlson ,  Anilkumar Chandolu ,  Indra V. Chary ,  David Daycock ,  Harsh Narendrakumar Jain ,  Matthew J. King ,  Jian Li ,  Brett D. Lowe ,  Prakash Rau Mokhna Rau ,  Lifang Xu

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11565 ,  H01L21/28 ,  H01L21/768 ,  H01L27/115 ,  H01L21/311 ,  H01L21/02 ,  H01L27/11526 ,  H01L27/11519 ,  H01L27/11573 ,  H01L21/3213

Abstract: A method used in forming a memory array comprising strings of memory cells and operative through-array-vias (TAVs) comprises forming a stack comprising vertically-alternating insulative tiers and conductive tiers. The stack comprises a TAV region and an operative memory-cell-string region. The TAV region comprises spaced operative TAV areas. Operative channel-material strings are formed in the stack in the operative memory-cell-string region and dummy channel-material strings are formed in the stack in the TAV region laterally outside of and not within the operative TAV areas. Operative TAVs are formed in individual of the spaced operative TAV areas in the TAV region. Other methods and structure independent of method are disclosed.

公开(公告)号：US20240273388A1

公开(公告)日：2024-08-15

申请号：US18642101

申请日：2024-04-22

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Yi Hu ,  Dmitry Vengertsev ,  Zahra Hosseinimakarem ,  Jonathan D. Harms

IPC: G06N5/04 ,  G06N20/00 ,  G06T7/00 ,  G06T7/521 ,  G06T7/90 ,  G06T11/00

CPC classification number: G06N5/04 ,  G06N20/00 ,  G06T7/521 ,  G06T7/90 ,  G06T7/97 ,  G06T11/001

Abstract: An image or a spectrum of a surface may be acquired by a computing device, which may be included in a mobile device in some examples. The computing device may extract a measured spectrum from the image and generate a corrected spectrum of the surface. In some examples, the corrected spectrum may be generated to compensate for ambient light influence. The corrected spectrum may be analyzed to provide a result, such as a diagnosis or a product recommendation. In some examples, the result is based, at least in part, on a comparison of the corrected spectrum to reference spectra. In some examples, the result is based, at least in part, on an inference of a machine learning model.

公开(公告)号：US11995567B2

公开(公告)日：2024-05-28

申请号：US17005036

申请日：2020-08-27

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Yi Hu ,  Dmitry Vengertsev ,  Zahra Hosseinimakarem ,  Jonathan D. Harms

IPC: G06N5/04 ,  G06N20/00 ,  G06T7/00 ,  G06T7/521 ,  G06T7/90 ,  G06T11/00

CPC classification number: G06N5/04 ,  G06N20/00 ,  G06T7/521 ,  G06T7/90 ,  G06T7/97 ,  G06T11/001

Abstract: An image or a spectrum of a surface may be acquired by a computing device, which may be included in a mobile device in some examples. The computing device may extract a measured spectrum from the image and generate a corrected spectrum of the surface. In some examples, the corrected spectrum may be generated to compensate for ambient light influence. The corrected spectrum may be analyzed to provide a result, such as a diagnosis or a product recommendation. In some examples, the result is based, at least in part, on a comparison of the corrected spectrum to reference spectra. In some examples, the result is based, at least in part, on an inference of a machine learning model.

公开(公告)号：US20240081076A1

公开(公告)日：2024-03-07

申请号：US17929911

申请日：2022-09-06

Applicant: Micron Technology, Inc.

Inventor： Sidhartha Gupta ,  Matthew J. King ,  Jiewei Chen ,  Yi Hu

IPC: H01L27/11575 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11582

CPC classification number: H01L27/11575 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11582

Abstract: An electronic device comprises a stack comprising tiers of alternating conductive structures and insulative structures adjacent to a source, and strings of memory cells extending vertically through the stack. The strings of memory cells individually comprising a channel material extending vertically through the stack. The electronic device comprises an additional stack adjacent to the stack and comprising tiers of alternating additional conductive structures and additional insulative structures, pillars extending through the additional stack and adjacent to the strings of memory cells, conductive contacts adjacent to the pillars, and isolation structures laterally intervening between neighboring pillars. The isolation structures exhibit a weave pattern, and portions of the isolation structures are laterally adjacent to and physically contact the conductive contacts. Related memory devices, systems, and methods are also described.